Classifications

• • H10P95/90—
• • H10P95/00—
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
  • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
  • H01L21/2258—Diffusion into or out of AIIIBV compounds
• • H10P14/3824—
• • H10P32/14—
• • H10P32/174—

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• High Energy & Nuclear Physics (AREA)
• Toxicology (AREA)
• Health & Medical Sciences (AREA)
• Recrystallisation Techniques (AREA)
• Magnetic Heads (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
• Coils Or Transformers For Communication (AREA)
• Sampling And Sample Adjustment (AREA)
• Superconductor Devices And Manufacturing Methods Thereof (AREA)
• Superconductors And Manufacturing Methods Therefor (AREA)
• Junction Field-Effect Transistors (AREA)
• Photovoltaic Devices (AREA)
• Semiconductor Lasers (AREA)
• Physical Or Chemical Processes And Apparatus (AREA)

Applications Claiming Priority (2)

Publications (2)

Family

ID=25437882

Family Applications (1)

Country Status (11)

Families Citing this family (27)

Citations (1)

Family Cites Families (14)

• 1986
  • 1986-10-09 US US06/916,818 patent/US4731338A/en not_active Expired - Lifetime
• 1987
  • 1987-10-06 IE IE872671A patent/IE872671L/xx unknown
  • 1987-10-06 KR KR870011156A patent/KR880005660A/ko not_active Withdrawn
  • 1987-10-06 IN IN875/DEL/87A patent/IN171245B/en unknown
  • 1987-10-06 CA CA000548660A patent/CA1277439C/en not_active Expired - Fee Related
  • 1987-10-07 DE DE3789187T patent/DE3789187T2/de not_active Expired - Fee Related
  • 1987-10-07 EP EP87308868A patent/EP0264222B1/en not_active Expired - Lifetime
  • 1987-10-07 AT AT87308868T patent/ATE102398T1/de not_active IP Right Cessation
  • 1987-10-08 AU AU79466/87A patent/AU592019B2/en not_active Ceased
  • 1987-10-09 JP JP62256117A patent/JPS63119591A/ja active Pending
  • 1987-10-09 CN CN87106894A patent/CN1012405B/zh not_active Expired

Patent Citations (1)

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