CA1277439C - Method for selective intermixing of layered structures composedof thin solid films - Google Patents

Method for selective intermixing of layered structures composedof thin solid films

Info

Publication number
CA1277439C
CA1277439C CA000548660A CA548660A CA1277439C CA 1277439 C CA1277439 C CA 1277439C CA 000548660 A CA000548660 A CA 000548660A CA 548660 A CA548660 A CA 548660A CA 1277439 C CA1277439 C CA 1277439C
Authority
CA
Canada
Prior art keywords
layers
energy source
laser beam
range
product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000548660A
Other languages
English (en)
French (fr)
Inventor
John D. Ralston
Anthony L. Moretti
Ravinder K. Jain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BP Corp North America Inc
Original Assignee
BP Corp North America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BP Corp North America Inc filed Critical BP Corp North America Inc
Application granted granted Critical
Publication of CA1277439C publication Critical patent/CA1277439C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P95/90—
    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • H10P14/3824—
    • H10P32/14—
    • H10P32/174—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Magnetic Heads (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
CA000548660A 1986-10-09 1987-10-06 Method for selective intermixing of layered structures composedof thin solid films Expired - Fee Related CA1277439C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US916,818 1986-10-09
US06/916,818 US4731338A (en) 1986-10-09 1986-10-09 Method for selective intermixing of layered structures composed of thin solid films

Publications (1)

Publication Number Publication Date
CA1277439C true CA1277439C (en) 1990-12-04

Family

ID=25437882

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000548660A Expired - Fee Related CA1277439C (en) 1986-10-09 1987-10-06 Method for selective intermixing of layered structures composedof thin solid films

Country Status (11)

Country Link
US (1) US4731338A (en:Method)
EP (1) EP0264222B1 (en:Method)
JP (1) JPS63119591A (en:Method)
KR (1) KR880005660A (en:Method)
CN (1) CN1012405B (en:Method)
AT (1) ATE102398T1 (en:Method)
AU (1) AU592019B2 (en:Method)
CA (1) CA1277439C (en:Method)
DE (1) DE3789187T2 (en:Method)
IE (1) IE872671L (en:Method)
IN (1) IN171245B (en:Method)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
GB2206233B (en) * 1987-06-23 1990-09-05 British Gas Plc Miniature thermoelectric converters
US4817102A (en) * 1988-04-18 1989-03-28 Maurer Larry D Acousto-electromagnetic hologistic resonant system
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5107316A (en) * 1989-12-28 1992-04-21 Siemens Corporate Research, Inc. Catoptrical opto-electronic gas sensor
US5081633A (en) * 1990-05-31 1992-01-14 Applied Solar Energy Corporation Semiconductor laser diode
US6539725B2 (en) * 2001-02-09 2003-04-01 Bsst Llc Efficiency thermoelectrics utilizing thermal isolation
US7946120B2 (en) 2001-02-09 2011-05-24 Bsst, Llc High capacity thermoelectric temperature control system
US7231772B2 (en) * 2001-02-09 2007-06-19 Bsst Llc. Compact, high-efficiency thermoelectric systems
US6959555B2 (en) * 2001-02-09 2005-11-01 Bsst Llc High power density thermoelectric systems
US7942010B2 (en) 2001-02-09 2011-05-17 Bsst, Llc Thermoelectric power generating systems utilizing segmented thermoelectric elements
US7273981B2 (en) * 2001-02-09 2007-09-25 Bsst, Llc. Thermoelectric power generation systems
US6672076B2 (en) 2001-02-09 2004-01-06 Bsst Llc Efficiency thermoelectrics utilizing convective heat flow
JP2004537708A (ja) * 2001-08-07 2004-12-16 ビーエスエスティー エルエルシー 熱電気式個人用環境調整機器
US8490412B2 (en) 2001-08-07 2013-07-23 Bsst, Llc Thermoelectric personal environment appliance
US6812395B2 (en) * 2001-10-24 2004-11-02 Bsst Llc Thermoelectric heterostructure assemblies element
SG99970A1 (en) * 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
US7847179B2 (en) * 2005-06-06 2010-12-07 Board Of Trustees Of Michigan State University Thermoelectric compositions and process
US7608777B2 (en) * 2005-06-28 2009-10-27 Bsst, Llc Thermoelectric power generator with intermediate loop
US7952015B2 (en) 2006-03-30 2011-05-31 Board Of Trustees Of Michigan State University Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements
US20090235969A1 (en) * 2008-01-25 2009-09-24 The Ohio State University Research Foundation Ternary thermoelectric materials and methods of fabrication
US8640466B2 (en) 2008-06-03 2014-02-04 Bsst Llc Thermoelectric heat pump
US20100024859A1 (en) * 2008-07-29 2010-02-04 Bsst, Llc. Thermoelectric power generator for variable thermal power source
US9178128B2 (en) 2011-11-17 2015-11-03 Gentherm Incorporated Thermoelectric devices with interface materials and methods of manufacturing the same
US11223004B2 (en) 2018-07-30 2022-01-11 Gentherm Incorporated Thermoelectric device having a polymeric coating
EP3745471A1 (en) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency
DE102021104685A1 (de) 2021-02-26 2022-09-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
FR2504727A1 (fr) * 1981-04-28 1982-10-29 Commissariat Energie Atomique Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel
DE3276979D1 (en) * 1981-05-06 1987-09-17 Univ Illinois Method of forming wide bandgap region within multilayer semiconductors
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
JPS58112326A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 複合ビ−ムアニ−ル方法
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
AU1859783A (en) * 1983-05-23 1984-11-29 Katz, B.B. Annealing implanted semiconductors by lasers
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPH06105718B2 (ja) * 1984-06-05 1994-12-21 日本電気株式会社 半導体装置及びその製造方法
JPS60262417A (ja) * 1984-06-08 1985-12-25 Nec Corp 半導体結晶の製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
JPS61191089A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法

Also Published As

Publication number Publication date
CN1012405B (zh) 1991-04-17
IE872671L (en) 1988-04-09
ATE102398T1 (de) 1994-03-15
EP0264222B1 (en) 1994-03-02
IN171245B (en:Method) 1992-08-22
KR880005660A (ko) 1988-06-29
EP0264222A3 (en) 1989-08-16
AU592019B2 (en) 1989-12-21
CN87106894A (zh) 1988-04-20
AU7946687A (en) 1988-04-14
DE3789187T2 (de) 1994-10-06
EP0264222A2 (en) 1988-04-20
DE3789187D1 (de) 1994-04-07
JPS63119591A (ja) 1988-05-24
US4731338A (en) 1988-03-15

Similar Documents

Publication Publication Date Title
CA1277439C (en) Method for selective intermixing of layered structures composedof thin solid films
Iizuka et al. Ultrafast intersubband relaxation (⩽ 150 fs) in AlGaN/GaN multiple quantum wells
US4865923A (en) Selective intermixing of layered structures composed of thin solid films
Akimoto et al. Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices
Laidig et al. Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures
Grandjean et al. GaN/Al x Ga 1− x N quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale
Razeghi Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1− xAsyP1− y Alloys
Chin et al. Determination of the valence‐band discontinuity of InP1− x Ga x P1− z As z (x∼ 0.13, z∼ 0.29) by quantum‐well luminescence
Zhang et al. Improved crystalline quality of AlAs x Sb1− x grown on InAs by modulated molecular‐beam epitaxy
Ahrenkiel et al. Carrier transport in ordered and disordered In 0.53 Ga 0.47 AS
Bradford et al. Growth and characterization of MgS/CdSe self-assembled quantum dots
Iwata et al. Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures
Behringer et al. Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue—green laser diodes
Mao et al. Liquid phase epitaxial growth and photoluminescence of InAsSb grown on GaSb substrates from antimony solution
Compaan et al. Raman studies of composition and structural ordering in Hg1-xCdxTe
Springholz et al. Interdiffusion in Pb1− xEuxSe/PbSe multi-quantum-well structures
Bagaev et al. Excitonic luminescence of CdTe and Cd0. 87Zn0. 13Te submonolayers in ZnTe films grown by molecular beam epitaxy
Epler et al. Layer disordering of GaAs‐AlGaAs superlattices by diffusion of laser‐incorporated Si
Baron et al. Nitrogen doping in molecular-beam epitaxy growth of II–VI semiconductors
Sands et al. Pulsed laser annealing of CdTe/CdMnTe superlattices
Hasenberg et al. Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes
Frey et al. Photoluminescence and Gain of MBE Grown Cubic InxGa1—xN/GaN Heterostructures
Rinaldi et al. Radiative transitions in quaternary In0. 52Ga0. 18Al0. 30As layers grown by molecular beam epitaxy
Dolginov et al. Efficient room-temperature stimulated emission from aGaxln1–xAsySb1–y semiconductor laser in the spectral range1. 8–2.4 μ
Huang et al. Ambipolar diffusion and carrier lifetime measurements in all‐binary (InAs) 2 (GaAs) 5 strained quantum wells grown on GaAs

Legal Events

Date Code Title Description
MKLA Lapsed