AU523107B2 - High temperature amorphous semiconductor member and method of making thesame - Google Patents

High temperature amorphous semiconductor member and method of making thesame

Info

Publication number
AU523107B2
AU523107B2 AU40237/78A AU4023778A AU523107B2 AU 523107 B2 AU523107 B2 AU 523107B2 AU 40237/78 A AU40237/78 A AU 40237/78A AU 4023778 A AU4023778 A AU 4023778A AU 523107 B2 AU523107 B2 AU 523107B2
Authority
AU
Australia
Prior art keywords
high temperature
amorphous semiconductor
semiconductor member
temperature amorphous
making thesame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU40237/78A
Other languages
English (en)
Other versions
AU4023778A (en
Inventor
Robert Ovshinsky Standford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/841,369 external-priority patent/US4177474A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of AU4023778A publication Critical patent/AU4023778A/en
Application granted granted Critical
Publication of AU523107B2 publication Critical patent/AU523107B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Silicon Compounds (AREA)
  • Glass Compositions (AREA)
AU40237/78A 1977-10-12 1978-09-27 High temperature amorphous semiconductor member and method of making thesame Expired AU523107B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
USUS841369 1977-10-12
US05/841,369 US4177474A (en) 1977-05-18 1977-10-12 High temperature amorphous semiconductor member and method of making the same

Publications (2)

Publication Number Publication Date
AU4023778A AU4023778A (en) 1980-04-03
AU523107B2 true AU523107B2 (en) 1982-07-15

Family

ID=25284694

Family Applications (1)

Application Number Title Priority Date Filing Date
AU40237/78A Expired AU523107B2 (en) 1977-10-12 1978-09-27 High temperature amorphous semiconductor member and method of making thesame

Country Status (7)

Country Link
JP (1) JPS5464981A (enrdf_load_stackoverflow)
AU (1) AU523107B2 (enrdf_load_stackoverflow)
CA (1) CA1123525A (enrdf_load_stackoverflow)
DE (1) DE2844070A1 (enrdf_load_stackoverflow)
ES (1) ES474153A1 (enrdf_load_stackoverflow)
FR (1) FR2454186A1 (enrdf_load_stackoverflow)
GB (1) GB2007021B (enrdf_load_stackoverflow)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
SE455554B (sv) * 1980-09-09 1988-07-18 Energy Conversion Devices Inc Fotospenningsdon
CA1176740A (en) * 1980-12-03 1984-10-23 Yoshihisa Tawada High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
JPS5814583A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子
EP0070509B2 (en) * 1981-07-17 1993-05-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor and amorphous silicon photovoltaic device
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device
JPS62162366A (ja) * 1981-09-17 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPH07105507B2 (ja) * 1982-02-25 1995-11-13 プラズマ・フィジクス・コ−ポレ−ション 光起電力装置
DE3314197A1 (de) * 1982-04-28 1983-11-03 Energy Conversion Devices, Inc., 48084 Troy, Mich. P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer
JPS5957407A (ja) * 1982-09-27 1984-04-03 Sanyo Electric Co Ltd 光起電力装置
JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
JPS58180074A (ja) * 1983-03-28 1983-10-21 Shunpei Yamazaki 光電変換半導体装置
EP0135294A3 (en) * 1983-07-18 1986-08-20 Energy Conversion Devices, Inc. Enhanced narrow band gap alloys for photovoltaic applications
US4569697A (en) * 1983-08-26 1986-02-11 Energy Conversion Devices, Inc. Method of forming photovoltaic quality amorphous alloys by passivating defect states
JPS62162367A (ja) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS6316678A (ja) * 1986-12-26 1988-01-23 Shunpei Yamazaki 光電変換装置
JP2648733B2 (ja) * 1993-11-18 1997-09-03 プラズマ・フィジクス・コーポレーション 半導体装置
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
TWI245288B (en) * 2003-03-20 2005-12-11 Sony Corp Semiconductor memory element and semiconductor memory device using the same
US20080042119A1 (en) * 2005-08-09 2008-02-21 Ovonyx, Inc. Multi-layered chalcogenide and related devices having enhanced operational characteristics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same

Also Published As

Publication number Publication date
DE2844070C2 (enrdf_load_stackoverflow) 1990-02-01
DE2844070A1 (de) 1979-04-26
AU4023778A (en) 1980-04-03
JPS6230512B2 (enrdf_load_stackoverflow) 1987-07-02
FR2454186B1 (enrdf_load_stackoverflow) 1984-08-24
GB2007021A (en) 1979-05-10
JPS5464981A (en) 1979-05-25
GB2007021B (en) 1982-05-06
FR2454186A1 (fr) 1980-11-07
ES474153A1 (es) 1979-10-16
CA1123525A (en) 1982-05-11

Similar Documents

Publication Publication Date Title
AU522191B2 (en) Amorphous semiconductor member and method of making same
AU523107B2 (en) High temperature amorphous semiconductor member and method of making thesame
AU526783B2 (en) Photovoltaic semiconductor devices and method of making same
JPS53121493A (en) Semiconductor and method of producing same
JPS545658A (en) Semiconductor element inactivated on surface and method of producing same
DE2861658D1 (en) Heat transfer elements and method for the manufacture of such elements
JPS5416193A (en) Semiconductor solar battery and method of producing same
JPS53134378A (en) Semiconductor and method of forming same
JPS5496383A (en) High performance ic and method of fabricating same
AU519660B2 (en) Electrical device and method of making same
JPS5453861A (en) Semiconductor device and method of producing same
JPS5478678A (en) Semiconductor and method of producing same
JPS5491187A (en) Semiconductor and method of fabricating same
JPS5390779A (en) Semiconductor and method of producing same
JPS5492077A (en) Semiconductor memory and method of fabricating same
JPS53100785A (en) Device and method of producing same
AU513092B2 (en) Semiconductor device and method of enveloping the semiconductor device
JPS53100784A (en) Semiconductor and method of producing same
GB2025123B (en) Semiconductor laser device and method of manufacturing thesame
JPS53108387A (en) Junction semiconductor and method of producing same
JPS5482084A (en) Thermal switch and method of producing same
JPS5478985A (en) Semiconductor and method of producing same
JPS5483383A (en) Semiconductor and method of fabricating same
JPS5635475A (en) Schockley dode and method of manufacturing same
JPS548613A (en) Crystallized foamed glass and method of making same