JPS5464981A - High temperature amorphous semiconductor member and method of producing same - Google Patents

High temperature amorphous semiconductor member and method of producing same

Info

Publication number
JPS5464981A
JPS5464981A JP12568278A JP12568278A JPS5464981A JP S5464981 A JPS5464981 A JP S5464981A JP 12568278 A JP12568278 A JP 12568278A JP 12568278 A JP12568278 A JP 12568278A JP S5464981 A JPS5464981 A JP S5464981A
Authority
JP
Japan
Prior art keywords
high temperature
amorphous semiconductor
producing same
semiconductor member
temperature amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12568278A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6230512B2 (enrdf_load_stackoverflow
Inventor
Robaato Obushinsuk Sutanfuoodo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/841,369 external-priority patent/US4177474A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of JPS5464981A publication Critical patent/JPS5464981A/ja
Publication of JPS6230512B2 publication Critical patent/JPS6230512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Glass Compositions (AREA)
JP12568278A 1977-10-12 1978-10-12 High temperature amorphous semiconductor member and method of producing same Granted JPS5464981A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/841,369 US4177474A (en) 1977-05-18 1977-10-12 High temperature amorphous semiconductor member and method of making the same

Publications (2)

Publication Number Publication Date
JPS5464981A true JPS5464981A (en) 1979-05-25
JPS6230512B2 JPS6230512B2 (enrdf_load_stackoverflow) 1987-07-02

Family

ID=25284694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12568278A Granted JPS5464981A (en) 1977-10-12 1978-10-12 High temperature amorphous semiconductor member and method of producing same

Country Status (7)

Country Link
JP (1) JPS5464981A (enrdf_load_stackoverflow)
AU (1) AU523107B2 (enrdf_load_stackoverflow)
CA (1) CA1123525A (enrdf_load_stackoverflow)
DE (1) DE2844070A1 (enrdf_load_stackoverflow)
ES (1) ES474153A1 (enrdf_load_stackoverflow)
FR (1) FR2454186A1 (enrdf_load_stackoverflow)
GB (1) GB2007021B (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
JPS5814583A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子
JPS5890790A (ja) * 1981-08-07 1983-05-30 ザ　ブリテイッシュ　ペトロレアム　カンパニ−　ピ−．エル．シ− 半導体装置
JPS58148423A (ja) * 1982-02-25 1983-09-03 プラズマ・フイジクス・コ−ポレ−シヨン 半導体装置
JPS58180074A (ja) * 1983-03-28 1983-10-21 Shunpei Yamazaki 光電変換半導体装置
JPS5957407A (ja) * 1982-09-27 1984-04-03 Sanyo Electric Co Ltd 光起電力装置
JPS6169177A (ja) * 1983-07-18 1986-04-09 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 光起電力関連用の改良された狭バンドギヤツプ・アモルフアス・アロイ
JPS62162367A (ja) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS62162366A (ja) * 1981-09-17 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS6316678A (ja) * 1986-12-26 1988-01-23 Shunpei Yamazaki 光電変換装置
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPH0722638A (ja) * 1993-11-18 1995-01-24 Plasma Physics Corp 半導体装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE455554B (sv) * 1980-09-09 1988-07-18 Energy Conversion Devices Inc Fotospenningsdon
CA1176740A (en) * 1980-12-03 1984-10-23 Yoshihisa Tawada High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
EP0070509B2 (en) * 1981-07-17 1993-05-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor and amorphous silicon photovoltaic device
DE3314197A1 (de) * 1982-04-28 1983-11-03 Energy Conversion Devices, Inc., 48084 Troy, Mich. P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer
JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
US4569697A (en) * 1983-08-26 1986-02-11 Energy Conversion Devices, Inc. Method of forming photovoltaic quality amorphous alloys by passivating defect states
TWI245288B (en) * 2003-03-20 2005-12-11 Sony Corp Semiconductor memory element and semiconductor memory device using the same
US20080042119A1 (en) * 2005-08-09 2008-02-21 Ovonyx, Inc. Multi-layered chalcogenide and related devices having enhanced operational characteristics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PHILOSMAG=1977 *
SOLIDSTATECOMMUN=1975 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
JPS5814583A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子
JPS5890790A (ja) * 1981-08-07 1983-05-30 ザ　ブリテイッシュ　ペトロレアム　カンパニ−　ピ−．エル．シ− 半導体装置
JPS62162366A (ja) * 1981-09-17 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS58148423A (ja) * 1982-02-25 1983-09-03 プラズマ・フイジクス・コ−ポレ−シヨン 半導体装置
JPS5957407A (ja) * 1982-09-27 1984-04-03 Sanyo Electric Co Ltd 光起電力装置
JPS58180074A (ja) * 1983-03-28 1983-10-21 Shunpei Yamazaki 光電変換半導体装置
JPS6169177A (ja) * 1983-07-18 1986-04-09 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 光起電力関連用の改良された狭バンドギヤツプ・アモルフアス・アロイ
JPS62162367A (ja) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS6316678A (ja) * 1986-12-26 1988-01-23 Shunpei Yamazaki 光電変換装置
JPH0722638A (ja) * 1993-11-18 1995-01-24 Plasma Physics Corp 半導体装置
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置

Also Published As

Publication number Publication date
DE2844070C2 (enrdf_load_stackoverflow) 1990-02-01
AU523107B2 (en) 1982-07-15
DE2844070A1 (de) 1979-04-26
AU4023778A (en) 1980-04-03
JPS6230512B2 (enrdf_load_stackoverflow) 1987-07-02
FR2454186B1 (enrdf_load_stackoverflow) 1984-08-24
GB2007021A (en) 1979-05-10
GB2007021B (en) 1982-05-06
FR2454186A1 (fr) 1980-11-07
ES474153A1 (es) 1979-10-16
CA1123525A (en) 1982-05-11

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