AU501061B2 - Buried heterostructure diode injection laser - Google Patents

Buried heterostructure diode injection laser

Info

Publication number
AU501061B2
AU501061B2 AU15210/76A AU1521076A AU501061B2 AU 501061 B2 AU501061 B2 AU 501061B2 AU 15210/76 A AU15210/76 A AU 15210/76A AU 1521076 A AU1521076 A AU 1521076A AU 501061 B2 AU501061 B2 AU 501061B2
Authority
AU
Australia
Prior art keywords
injection laser
buried heterostructure
diode injection
heterostructure diode
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU15210/76A
Other languages
English (en)
Other versions
AU1521076A (en
Inventor
R. D. Scifres Dr Burnham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/589,120 external-priority patent/US3978428A/en
Priority claimed from US05/589,277 external-priority patent/US4033796A/en
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of AU1521076A publication Critical patent/AU1521076A/en
Application granted granted Critical
Publication of AU501061B2 publication Critical patent/AU501061B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
AU15210/76A 1975-06-23 1976-06-23 Buried heterostructure diode injection laser Expired AU501061B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US05/589,120 US3978428A (en) 1975-06-23 1975-06-23 Buried-heterostructure diode injection laser
USUS589277 1975-06-23
US05/589,277 US4033796A (en) 1975-06-23 1975-06-23 Method of making buried-heterostructure diode injection laser
USUS589120 1975-06-23

Publications (2)

Publication Number Publication Date
AU1521076A AU1521076A (en) 1978-01-05
AU501061B2 true AU501061B2 (en) 1979-06-07

Family

ID=27080453

Family Applications (1)

Application Number Title Priority Date Filing Date
AU15210/76A Expired AU501061B2 (en) 1975-06-23 1976-06-23 Buried heterostructure diode injection laser

Country Status (7)

Country Link
JP (1) JPS523392A (fr)
AU (1) AU501061B2 (fr)
CA (1) CA1065460A (fr)
DE (1) DE2626775C2 (fr)
FR (1) FR2315785A1 (fr)
GB (1) GB1546729A (fr)
NL (1) NL7606798A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234686A (en) * 1975-09-10 1977-03-16 Sumitomo Electric Ind Ltd Double hetero junction type semiconductor laser element and its manufa cturing process
GB1530323A (en) * 1975-12-22 1978-10-25 Standard Telephones Cables Ltd Semiconductor waveguide structures
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
DE2757470A1 (de) * 1977-12-22 1979-07-05 Siemens Ag Verfahren zum herstellen einer halbleiteranordnung
CA1127282A (fr) * 1978-05-22 1982-07-06 Takashi Sugino Laser a semiconducteur et methode de fabrication
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
JPS56161688A (en) * 1980-05-16 1981-12-12 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS5910039Y2 (ja) * 1980-03-18 1984-03-29 大日本印刷株式会社 商品展示函
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS5763885A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPS5791574A (en) * 1980-11-28 1982-06-07 Nec Corp Light emitting diode
JPS5792880A (en) * 1980-12-02 1982-06-09 Toshiba Corp Light emitting diode
JPS57162484A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
JPS58225683A (ja) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp 半導体レーザの製造方法
GB2123604B (en) * 1982-06-29 1985-12-18 Standard Telephones Cables Ltd Injection laser manufacture
JPS599990A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp 半導体レ−ザの製造方法
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
JP2553580B2 (ja) * 1987-08-19 1996-11-13 三菱電機株式会社 半導体レ−ザ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859178A (en) * 1955-12-19 1958-11-04 Exxon Research Engineering Co Method of lubricating bearings
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Also Published As

Publication number Publication date
CA1065460A (fr) 1979-10-30
GB1546729A (en) 1979-05-31
FR2315785B1 (fr) 1983-03-25
NL7606798A (nl) 1976-12-27
FR2315785A1 (fr) 1977-01-21
DE2626775C2 (de) 1983-04-21
JPS523392A (en) 1977-01-11
JPS5653237B2 (fr) 1981-12-17
DE2626775A1 (de) 1976-12-30
AU1521076A (en) 1978-01-05

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