CA1065460A - Laser a semiconducteurs a structure heterogene ensevelie - Google Patents

Laser a semiconducteurs a structure heterogene ensevelie

Info

Publication number
CA1065460A
CA1065460A CA252,590A CA252590A CA1065460A CA 1065460 A CA1065460 A CA 1065460A CA 252590 A CA252590 A CA 252590A CA 1065460 A CA1065460 A CA 1065460A
Authority
CA
Canada
Prior art keywords
layer
groove
substrate
laser
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA252,590A
Other languages
English (en)
Inventor
Robert D. Burnham
Donald R. Scifres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/589,120 external-priority patent/US3978428A/en
Priority claimed from US05/589,277 external-priority patent/US4033796A/en
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of CA1065460A publication Critical patent/CA1065460A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
CA252,590A 1975-06-23 1976-05-14 Laser a semiconducteurs a structure heterogene ensevelie Expired CA1065460A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/589,120 US3978428A (en) 1975-06-23 1975-06-23 Buried-heterostructure diode injection laser
US05/589,277 US4033796A (en) 1975-06-23 1975-06-23 Method of making buried-heterostructure diode injection laser

Publications (1)

Publication Number Publication Date
CA1065460A true CA1065460A (fr) 1979-10-30

Family

ID=27080453

Family Applications (1)

Application Number Title Priority Date Filing Date
CA252,590A Expired CA1065460A (fr) 1975-06-23 1976-05-14 Laser a semiconducteurs a structure heterogene ensevelie

Country Status (7)

Country Link
JP (1) JPS523392A (fr)
AU (1) AU501061B2 (fr)
CA (1) CA1065460A (fr)
DE (1) DE2626775C2 (fr)
FR (1) FR2315785A1 (fr)
GB (1) GB1546729A (fr)
NL (1) NL7606798A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234686A (en) * 1975-09-10 1977-03-16 Sumitomo Electric Ind Ltd Double hetero junction type semiconductor laser element and its manufa cturing process
GB1530323A (en) * 1975-12-22 1978-10-25 Standard Telephones Cables Ltd Semiconductor waveguide structures
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
DE2757470A1 (de) * 1977-12-22 1979-07-05 Siemens Ag Verfahren zum herstellen einer halbleiteranordnung
CA1127282A (fr) * 1978-05-22 1982-07-06 Takashi Sugino Laser a semiconducteur et methode de fabrication
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
JPS56161688A (en) * 1980-05-16 1981-12-12 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS5910039Y2 (ja) * 1980-03-18 1984-03-29 大日本印刷株式会社 商品展示函
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS5763885A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPS5791574A (en) * 1980-11-28 1982-06-07 Nec Corp Light emitting diode
JPS5792880A (en) * 1980-12-02 1982-06-09 Toshiba Corp Light emitting diode
JPS57162484A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
JPS58225683A (ja) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp 半導体レーザの製造方法
GB2123604B (en) * 1982-06-29 1985-12-18 Standard Telephones Cables Ltd Injection laser manufacture
JPS599990A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp 半導体レ−ザの製造方法
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
JP2553580B2 (ja) * 1987-08-19 1996-11-13 三菱電機株式会社 半導体レ−ザ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859178A (en) * 1955-12-19 1958-11-04 Exxon Research Engineering Co Method of lubricating bearings
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Also Published As

Publication number Publication date
GB1546729A (en) 1979-05-31
FR2315785B1 (fr) 1983-03-25
NL7606798A (nl) 1976-12-27
AU501061B2 (en) 1979-06-07
FR2315785A1 (fr) 1977-01-21
DE2626775C2 (de) 1983-04-21
JPS523392A (en) 1977-01-11
JPS5653237B2 (fr) 1981-12-17
DE2626775A1 (de) 1976-12-30
AU1521076A (en) 1978-01-05

Similar Documents

Publication Publication Date Title
US3978428A (en) Buried-heterostructure diode injection laser
US4033796A (en) Method of making buried-heterostructure diode injection laser
CA1065460A (fr) Laser a semiconducteurs a structure heterogene ensevelie
US4099999A (en) Method of making etched-striped substrate planar laser
EP0704913B1 (fr) Dispositif optique à semi-conducteur et méthode de fabrication
US5160492A (en) Buried isolation using ion implantation and subsequent epitaxial growth
JP2686764B2 (ja) 光半導体素子の製造方法
EP0025362B1 (fr) Dispositif semiconducteur électroluminescent
US3984262A (en) Method of making a substrate striped planar laser
JP2000514244A (ja) 垂直空洞面発光レーザのための電流封じ込め
IE53373B1 (en) Semiconductor laser having at least two radiation beams,and method of manufacturing same
CA1110367A (fr) Limitation du courant dans des semiconducteurs
US5737351A (en) Semiconductor laser including ridge structure extending between window regions
CN114825046B (zh) 一种半导体发光结构及其制备方法
GB2385986A (en) Optoelectronic device
US4340967A (en) Semiconductor lasers with stable higher-order modes parallel to the junction plane
US5193098A (en) Method of forming current barriers in semiconductor lasers
US4280106A (en) Striped substrate planar laser
US4706254A (en) Semiconductor device and its fabrication
EP0161016B1 (fr) Laser à semi-conducteur
US4377865A (en) Semiconductor laser
US5105234A (en) Electroluminescent diode having a low capacitance
JPH0518473B2 (fr)
US6751246B2 (en) Buried ribbon semiconductor laser and a method of fabrication
CA1215160A (fr) Laser solide a geometrie a bandes dont la lumiere est guidee par un gradient d&#39;indice de refraction transversal