GB1546729A - Buried-heterostructure diode unjection laser - Google Patents

Buried-heterostructure diode unjection laser

Info

Publication number
GB1546729A
GB1546729A GB25356/76A GB2535676A GB1546729A GB 1546729 A GB1546729 A GB 1546729A GB 25356/76 A GB25356/76 A GB 25356/76A GB 2535676 A GB2535676 A GB 2535676A GB 1546729 A GB1546729 A GB 1546729A
Authority
GB
United Kingdom
Prior art keywords
unjection
buried
laser
heterostructure diode
heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25356/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/589,120 external-priority patent/US3978428A/en
Priority claimed from US05/589,277 external-priority patent/US4033796A/en
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of GB1546729A publication Critical patent/GB1546729A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
GB25356/76A 1975-06-23 1976-06-18 Buried-heterostructure diode unjection laser Expired GB1546729A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/589,120 US3978428A (en) 1975-06-23 1975-06-23 Buried-heterostructure diode injection laser
US05/589,277 US4033796A (en) 1975-06-23 1975-06-23 Method of making buried-heterostructure diode injection laser

Publications (1)

Publication Number Publication Date
GB1546729A true GB1546729A (en) 1979-05-31

Family

ID=27080453

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25356/76A Expired GB1546729A (en) 1975-06-23 1976-06-18 Buried-heterostructure diode unjection laser

Country Status (7)

Country Link
JP (1) JPS523392A (fr)
AU (1) AU501061B2 (fr)
CA (1) CA1065460A (fr)
DE (1) DE2626775C2 (fr)
FR (1) FR2315785A1 (fr)
GB (1) GB1546729A (fr)
NL (1) NL7606798A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145281A (en) * 1983-08-18 1985-03-20 Mitsubishi Electric Corp Surface emitting semiconductor laser

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234686A (en) * 1975-09-10 1977-03-16 Sumitomo Electric Ind Ltd Double hetero junction type semiconductor laser element and its manufa cturing process
GB1530323A (en) * 1975-12-22 1978-10-25 Standard Telephones Cables Ltd Semiconductor waveguide structures
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
DE2757470A1 (de) * 1977-12-22 1979-07-05 Siemens Ag Verfahren zum herstellen einer halbleiteranordnung
CA1127282A (fr) * 1978-05-22 1982-07-06 Takashi Sugino Laser a semiconducteur et methode de fabrication
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
JPS56161688A (en) * 1980-05-16 1981-12-12 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS5910039Y2 (ja) * 1980-03-18 1984-03-29 大日本印刷株式会社 商品展示函
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS5763885A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPS5791574A (en) * 1980-11-28 1982-06-07 Nec Corp Light emitting diode
JPS5792880A (en) * 1980-12-02 1982-06-09 Toshiba Corp Light emitting diode
JPS57162484A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
JPS58225683A (ja) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp 半導体レーザの製造方法
GB2123604B (en) * 1982-06-29 1985-12-18 Standard Telephones Cables Ltd Injection laser manufacture
JPS599990A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp 半導体レ−ザの製造方法
JP2553580B2 (ja) * 1987-08-19 1996-11-13 三菱電機株式会社 半導体レ−ザ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859178A (en) * 1955-12-19 1958-11-04 Exxon Research Engineering Co Method of lubricating bearings
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145281A (en) * 1983-08-18 1985-03-20 Mitsubishi Electric Corp Surface emitting semiconductor laser
US4675875A (en) * 1983-08-18 1987-06-23 Mitsubishi Denki Kabushiki Kaisha Surface emitting semiconductor laser

Also Published As

Publication number Publication date
CA1065460A (fr) 1979-10-30
FR2315785B1 (fr) 1983-03-25
NL7606798A (nl) 1976-12-27
AU501061B2 (en) 1979-06-07
FR2315785A1 (fr) 1977-01-21
DE2626775C2 (de) 1983-04-21
JPS523392A (en) 1977-01-11
JPS5653237B2 (fr) 1981-12-17
DE2626775A1 (de) 1976-12-30
AU1521076A (en) 1978-01-05

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee