FR2493616B1 - Laser a injection a heterostructure - Google Patents

Laser a injection a heterostructure

Info

Publication number
FR2493616B1
FR2493616B1 FR8120291A FR8120291A FR2493616B1 FR 2493616 B1 FR2493616 B1 FR 2493616B1 FR 8120291 A FR8120291 A FR 8120291A FR 8120291 A FR8120291 A FR 8120291A FR 2493616 B1 FR2493616 B1 FR 2493616B1
Authority
FR
France
Prior art keywords
injection laser
heterostructure injection
heterostructure
laser
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8120291A
Other languages
English (en)
Other versions
FR2493616A1 (fr
Inventor
Donald R Scifres
William Streifer
Robert D Burnham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of FR2493616A1 publication Critical patent/FR2493616A1/fr
Application granted granted Critical
Publication of FR2493616B1 publication Critical patent/FR2493616B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
FR8120291A 1980-11-06 1981-10-29 Laser a injection a heterostructure Expired FR2493616B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/204,430 US4371966A (en) 1980-11-06 1980-11-06 Heterostructure lasers with combination active strip and passive waveguide strip

Publications (2)

Publication Number Publication Date
FR2493616A1 FR2493616A1 (fr) 1982-05-07
FR2493616B1 true FR2493616B1 (fr) 1987-02-06

Family

ID=22757837

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8120291A Expired FR2493616B1 (fr) 1980-11-06 1981-10-29 Laser a injection a heterostructure

Country Status (3)

Country Link
US (1) US4371966A (fr)
JP (1) JPS57106192A (fr)
FR (1) FR2493616B1 (fr)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448797A (en) * 1981-02-04 1984-05-15 Xerox Corporation Masking techniques in chemical vapor deposition
US4447904A (en) * 1981-02-04 1984-05-08 Xerox Corporation Semiconductor devices with nonplanar characteristics produced in chemical vapor deposition
US4488307A (en) * 1982-06-07 1984-12-11 The United States Of America As Represented By The Secretary Of The Navy Three-mirror active-passive semiconductor laser
US4523316A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with non-absorbing mirror facet
US4523317A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with reduced absorption at a mirror facet
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
US4722088A (en) * 1984-09-14 1988-01-26 Siemens Aktiengesellschaft Semiconductor laser for high optical output power with reduced mirror heating
JPS6174388A (ja) * 1984-09-19 1986-04-16 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
DE3435148A1 (de) * 1984-09-25 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode
US4631730A (en) * 1984-09-28 1986-12-23 Bell Communications Research, Inc. Low noise injection laser structure
DE3530466A1 (de) * 1985-08-27 1987-03-05 Licentia Gmbh Indexgefuehrter halbleiterlaser
DE3604295A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdiode
DE3604294A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdioden
DE3604293A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdiode
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
JPH0614575B2 (ja) * 1987-07-10 1994-02-23 シャープ株式会社 半導体レーザ素子
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
JPH02203586A (ja) * 1989-02-01 1990-08-13 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JP2686306B2 (ja) * 1989-02-01 1997-12-08 三菱電機株式会社 半導体レーザ装置とその製造方法
JP3444610B2 (ja) * 1992-09-29 2003-09-08 三菱化学株式会社 半導体レーザ装置
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JP3386261B2 (ja) * 1994-12-05 2003-03-17 三菱電機株式会社 光半導体装置、及びその製造方法
JPH08222798A (ja) * 1995-02-15 1996-08-30 Mitsubishi Electric Corp 半導体レーザの製造方法
JP2002141611A (ja) * 2000-08-24 2002-05-17 Fuji Photo Film Co Ltd 半導体発光素子およびその製造方法
EP1583187B1 (fr) * 2000-10-12 2007-07-04 FUJIFILM Corporation Laser à semi-conducteur avec région sans injection de courant à proximité d'une face de résonateur
US6956983B2 (en) * 2002-05-31 2005-10-18 Intel Corporation Epitaxial growth for waveguide tapering
US6989284B2 (en) * 2002-05-31 2006-01-24 Intel Corporation Fabrication of a waveguide taper through ion implantation
GB2411520A (en) * 2004-02-25 2005-08-31 Agilent Technologies Inc Method of forming laser mesa by reactive ion etching followed by in situ etching in regrowth reactor
JP4541208B2 (ja) * 2005-03-30 2010-09-08 アンリツ株式会社 半導体発光素子
KR100842277B1 (ko) * 2006-12-07 2008-06-30 한국전자통신연구원 반사형 반도체 광증폭기 및 수퍼 루미네센스 다이오드
DE102008025922B4 (de) * 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur
CN114512896A (zh) * 2020-10-23 2022-05-17 苏州洛合镭信光电科技有限公司 半导体光源及制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (fr) * 1973-01-11 1974-09-06
US4121177A (en) * 1973-05-28 1978-10-17 Hitachi, Ltd. Semiconductor device and a method of fabricating the same
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode
JPS546788A (en) * 1977-06-17 1979-01-19 Nec Corp Stripe-type double hetero-junction laser element
JPS54115088A (en) * 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
JPS54154984A (en) * 1978-05-12 1979-12-06 Nec Corp Semiconductor laser device and its manufacture
JPS5562792A (en) * 1978-10-11 1980-05-12 Nec Corp Injection type semiconductor laser element
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers

Also Published As

Publication number Publication date
FR2493616A1 (fr) 1982-05-07
JPS57106192A (en) 1982-07-01
US4371966A (en) 1983-02-01

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Legal Events

Date Code Title Description
ST Notification of lapse