AU3639001A - Use of csoh in a dielectric cmp slurry - Google Patents

Use of csoh in a dielectric cmp slurry

Info

Publication number
AU3639001A
AU3639001A AU36390/01A AU3639001A AU3639001A AU 3639001 A AU3639001 A AU 3639001A AU 36390/01 A AU36390/01 A AU 36390/01A AU 3639001 A AU3639001 A AU 3639001A AU 3639001 A AU3639001 A AU 3639001A
Authority
AU
Australia
Prior art keywords
csoh
cmp slurry
dielectric cmp
cesium hydroxide
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU36390/01A
Other languages
English (en)
Inventor
James A. Dirksen
Paul M. Feeney
Brian L Mueller
Alicia F. Walters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of AU3639001A publication Critical patent/AU3639001A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
AU36390/01A 1999-11-04 2000-10-31 Use of csoh in a dielectric cmp slurry Abandoned AU3639001A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/428,965 US6350393B2 (en) 1999-11-04 1999-11-04 Use of CsOH in a dielectric CMP slurry
US09428965 1999-11-04
PCT/US2000/041707 WO2001032793A2 (en) 1999-11-04 2000-10-31 Use of cesium hydroxide in a dielectric cmp slurry

Publications (1)

Publication Number Publication Date
AU3639001A true AU3639001A (en) 2001-05-14

Family

ID=23701170

Family Applications (1)

Application Number Title Priority Date Filing Date
AU36390/01A Abandoned AU3639001A (en) 1999-11-04 2000-10-31 Use of csoh in a dielectric cmp slurry

Country Status (11)

Country Link
US (1) US6350393B2 (https=)
EP (1) EP1234010B1 (https=)
JP (3) JP2003514061A (https=)
KR (1) KR20020077343A (https=)
CN (1) CN1220742C (https=)
AT (1) ATE263224T1 (https=)
AU (1) AU3639001A (https=)
DE (1) DE60009546T2 (https=)
HK (1) HK1048826A1 (https=)
TW (1) TW554022B (https=)
WO (1) WO2001032793A2 (https=)

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US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7677956B2 (en) 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
KR100526092B1 (ko) * 2002-10-15 2005-11-08 주식회사 네패스 실리콘 웨이퍼용 에지연마 조성물
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
WO2004090937A2 (en) * 2003-04-10 2004-10-21 Technion Research & Development Foundation Ltd Copper cmp slurry composition
US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
KR101371853B1 (ko) * 2005-01-05 2014-03-07 니타 하스 인코포레이티드 연마슬러리
US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
EP1960570A2 (en) 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
JP5281408B2 (ja) 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド ドープされた窒化アルミニウム結晶及びそれを製造する方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
EP2007933B1 (en) 2006-03-30 2017-05-10 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US20100022171A1 (en) * 2006-10-16 2010-01-28 Nevin Naguib Glass polishing compositions and methods
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
WO2012003304A1 (en) 2010-06-30 2012-01-05 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
EP2768920A4 (en) * 2011-10-21 2015-06-03 Advanced Tech Materials AMIN FREE POST-KMP COMPOSITION AND METHOD OF USE THEREOF
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト

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US5714418A (en) * 1995-11-08 1998-02-03 Intel Corporation Diffusion barrier for electrical interconnects in an integrated circuit
EP0779655A3 (en) * 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JPH09316431A (ja) * 1996-05-27 1997-12-09 Showa Kiyabotsuto Super Metal Kk 研磨用スラリー

Also Published As

Publication number Publication date
ATE263224T1 (de) 2004-04-15
HK1048826A1 (zh) 2003-04-17
KR20020077343A (ko) 2002-10-11
JP6030703B2 (ja) 2016-11-24
CN1387556A (zh) 2002-12-25
US6350393B2 (en) 2002-02-26
DE60009546D1 (de) 2004-05-06
JP2003514061A (ja) 2003-04-15
JP2012156550A (ja) 2012-08-16
WO2001032793A2 (en) 2001-05-10
US20010051433A1 (en) 2001-12-13
JP2015147938A (ja) 2015-08-20
WO2001032793A3 (en) 2001-08-02
DE60009546T2 (de) 2005-02-03
TW554022B (en) 2003-09-21
EP1234010B1 (en) 2004-03-31
EP1234010A2 (en) 2002-08-28
WO2001032793A8 (en) 2001-10-04
CN1220742C (zh) 2005-09-28

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase