HK1048826A1 - 介电质cmp浆液中csoh的应用 - Google Patents

介电质cmp浆液中csoh的应用 Download PDF

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Publication number
HK1048826A1
HK1048826A1 HK03100847.2A HK03100847A HK1048826A1 HK 1048826 A1 HK1048826 A1 HK 1048826A1 HK 03100847 A HK03100847 A HK 03100847A HK 1048826 A1 HK1048826 A1 HK 1048826A1
Authority
HK
Hong Kong
Prior art keywords
polishing composition
chemical
abrasive
silicon
polishing
Prior art date
Application number
HK03100847.2A
Other languages
English (en)
Chinese (zh)
Inventor
艾丽西亚‧F‧沃尔特斯
艾麗西亞‧F‧沃爾特斯
布赖恩‧L‧米勒
詹姆斯‧A‧德克森
布賴恩‧L‧米勒
保罗‧M‧菲尼
保羅‧M‧菲尼
Original Assignee
卡伯特微电子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡伯特微电子公司 filed Critical 卡伯特微电子公司
Publication of HK1048826A1 publication Critical patent/HK1048826A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
HK03100847.2A 1999-11-04 2000-10-31 介电质cmp浆液中csoh的应用 HK1048826A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/428,965 US6350393B2 (en) 1999-11-04 1999-11-04 Use of CsOH in a dielectric CMP slurry
US09/428,965 1999-11-04
PCT/US2000/041707 WO2001032793A2 (en) 1999-11-04 2000-10-31 Use of cesium hydroxide in a dielectric cmp slurry

Publications (1)

Publication Number Publication Date
HK1048826A1 true HK1048826A1 (zh) 2003-04-17

Family

ID=23701170

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03100847.2A HK1048826A1 (zh) 1999-11-04 2000-10-31 介电质cmp浆液中csoh的应用

Country Status (11)

Country Link
US (1) US6350393B2 (https=)
EP (1) EP1234010B1 (https=)
JP (3) JP2003514061A (https=)
KR (1) KR20020077343A (https=)
CN (1) CN1220742C (https=)
AT (1) ATE263224T1 (https=)
AU (1) AU3639001A (https=)
DE (1) DE60009546T2 (https=)
HK (1) HK1048826A1 (https=)
TW (1) TW554022B (https=)
WO (1) WO2001032793A2 (https=)

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US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7677956B2 (en) 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
KR100526092B1 (ko) * 2002-10-15 2005-11-08 주식회사 네패스 실리콘 웨이퍼용 에지연마 조성물
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
WO2004090937A2 (en) * 2003-04-10 2004-10-21 Technion Research & Development Foundation Ltd Copper cmp slurry composition
US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
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US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
EP1960570A2 (en) 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
JP5281408B2 (ja) 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド ドープされた窒化アルミニウム結晶及びそれを製造する方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
EP2007933B1 (en) 2006-03-30 2017-05-10 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US20100022171A1 (en) * 2006-10-16 2010-01-28 Nevin Naguib Glass polishing compositions and methods
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
WO2012003304A1 (en) 2010-06-30 2012-01-05 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
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US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト

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Also Published As

Publication number Publication date
ATE263224T1 (de) 2004-04-15
KR20020077343A (ko) 2002-10-11
JP6030703B2 (ja) 2016-11-24
CN1387556A (zh) 2002-12-25
US6350393B2 (en) 2002-02-26
DE60009546D1 (de) 2004-05-06
JP2003514061A (ja) 2003-04-15
JP2012156550A (ja) 2012-08-16
WO2001032793A2 (en) 2001-05-10
US20010051433A1 (en) 2001-12-13
JP2015147938A (ja) 2015-08-20
WO2001032793A3 (en) 2001-08-02
DE60009546T2 (de) 2005-02-03
TW554022B (en) 2003-09-21
EP1234010B1 (en) 2004-03-31
EP1234010A2 (en) 2002-08-28
WO2001032793A8 (en) 2001-10-04
AU3639001A (en) 2001-05-14
CN1220742C (zh) 2005-09-28

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