JP2003514061A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003514061A5 JP2003514061A5 JP2001535478A JP2001535478A JP2003514061A5 JP 2003514061 A5 JP2003514061 A5 JP 2003514061A5 JP 2001535478 A JP2001535478 A JP 2001535478A JP 2001535478 A JP2001535478 A JP 2001535478A JP 2003514061 A5 JP2003514061 A5 JP 2003514061A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing composition
- silicon
- abrasive
- chemical mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005498 polishing Methods 0.000 description 69
- 239000000203 mixture Substances 0.000 description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 239000010410 layer Substances 0.000 description 29
- 239000002002 slurry Substances 0.000 description 26
- 239000000126 substance Substances 0.000 description 23
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Chemical group [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 21
- 238000000034 method Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 229910021485 fumed silica Inorganic materials 0.000 description 11
- 230000007547 defect Effects 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 150000001447 alkali salts Chemical class 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000006061 abrasive grain Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 229910052792 caesium Inorganic materials 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- -1 Cesium ions Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical class [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 159000000006 cesium salts Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/428,965 | 1999-11-04 | ||
| US09/428,965 US6350393B2 (en) | 1999-11-04 | 1999-11-04 | Use of CsOH in a dielectric CMP slurry |
| PCT/US2000/041707 WO2001032793A2 (en) | 1999-11-04 | 2000-10-31 | Use of cesium hydroxide in a dielectric cmp slurry |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012096848A Division JP2012156550A (ja) | 1999-11-04 | 2012-04-20 | 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003514061A JP2003514061A (ja) | 2003-04-15 |
| JP2003514061A5 true JP2003514061A5 (https=) | 2011-10-27 |
Family
ID=23701170
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001535478A Withdrawn JP2003514061A (ja) | 1999-11-04 | 2000-10-31 | 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用 |
| JP2012096848A Withdrawn JP2012156550A (ja) | 1999-11-04 | 2012-04-20 | 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用 |
| JP2015094245A Expired - Fee Related JP6030703B2 (ja) | 1999-11-04 | 2015-05-01 | 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012096848A Withdrawn JP2012156550A (ja) | 1999-11-04 | 2012-04-20 | 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用 |
| JP2015094245A Expired - Fee Related JP6030703B2 (ja) | 1999-11-04 | 2015-05-01 | 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6350393B2 (https=) |
| EP (1) | EP1234010B1 (https=) |
| JP (3) | JP2003514061A (https=) |
| KR (1) | KR20020077343A (https=) |
| CN (1) | CN1220742C (https=) |
| AT (1) | ATE263224T1 (https=) |
| AU (1) | AU3639001A (https=) |
| DE (1) | DE60009546T2 (https=) |
| HK (1) | HK1048826A1 (https=) |
| TW (1) | TW554022B (https=) |
| WO (1) | WO2001032793A2 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10063491A1 (de) * | 2000-12-20 | 2002-06-27 | Bayer Ag | Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten |
| US20060005763A1 (en) | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
| US7677956B2 (en) | 2002-05-10 | 2010-03-16 | Cabot Microelectronics Corporation | Compositions and methods for dielectric CMP |
| KR100526092B1 (ko) * | 2002-10-15 | 2005-11-08 | 주식회사 네패스 | 실리콘 웨이퍼용 에지연마 조성물 |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US7964005B2 (en) * | 2003-04-10 | 2011-06-21 | Technion Research & Development Foundation Ltd. | Copper CMP slurry composition |
| US7186653B2 (en) | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| US20050279733A1 (en) * | 2004-06-18 | 2005-12-22 | Cabot Microelectronics Corporation | CMP composition for improved oxide removal rate |
| US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
| JP5319887B2 (ja) * | 2005-01-05 | 2013-10-16 | ニッタ・ハース株式会社 | 研磨用スラリー |
| US7351662B2 (en) * | 2005-01-07 | 2008-04-01 | Dupont Air Products Nanomaterials Llc | Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization |
| US20060288929A1 (en) * | 2005-06-10 | 2006-12-28 | Crystal Is, Inc. | Polar surface preparation of nitride substrates |
| WO2007038399A2 (en) * | 2005-09-26 | 2007-04-05 | Cabot Microelectronics Corporation | Metal cations for initiating chemical mechanical polishing |
| CN101415864B (zh) * | 2005-11-28 | 2014-01-08 | 晶体公司 | 具有减少缺陷的大的氮化铝晶体及其制造方法 |
| US7641735B2 (en) | 2005-12-02 | 2010-01-05 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| CN101454487B (zh) | 2006-03-30 | 2013-01-23 | 晶体公司 | 氮化铝块状晶体的可控掺杂方法 |
| US20080020680A1 (en) * | 2006-07-24 | 2008-01-24 | Cabot Microelectronics Corporation | Rate-enhanced CMP compositions for dielectric films |
| US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| CN101528882B (zh) * | 2006-10-16 | 2014-07-16 | 卡伯特微电子公司 | 玻璃抛光组合物及方法 |
| WO2008088838A1 (en) | 2007-01-17 | 2008-07-24 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| WO2008094464A2 (en) | 2007-01-26 | 2008-08-07 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
| US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| US8754021B2 (en) | 2009-02-27 | 2014-06-17 | Advanced Technology Materials, Inc. | Non-amine post-CMP composition and method of use |
| JP5806734B2 (ja) | 2010-06-30 | 2015-11-10 | クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. | 熱勾配制御による窒化アルミニウム大単結晶成長 |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| CN105869997A (zh) * | 2011-10-21 | 2016-08-17 | 安格斯公司 | 无胺cmp后组合物及其使用方法 |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| EP2973664B1 (en) | 2013-03-15 | 2020-10-14 | Crystal Is, Inc. | Ultraviolet light-emitting device and method of forming a contact to an ultraviolet light-emitting device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4150171A (en) | 1976-03-30 | 1979-04-17 | Surface Technology, Inc. | Electroless plating |
| US4440670A (en) | 1982-09-30 | 1984-04-03 | Exxon Research And Engineering Co. | Method of synthesizing high surface area unagglomerated noble metal pyrochlore compounds |
| EP0322721B1 (en) * | 1987-12-29 | 1993-10-06 | E.I. Du Pont De Nemours And Company | Fine polishing composition for wafers |
| JP2625002B2 (ja) * | 1988-06-27 | 1997-06-25 | イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー | ウェハーのファイン研磨用組成物 |
| US5352277A (en) | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
| JP2714411B2 (ja) * | 1988-12-12 | 1998-02-16 | イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー | ウェハーのファイン研摩用組成物 |
| US5129982A (en) | 1991-03-15 | 1992-07-14 | General Motors Corporation | Selective electrochemical etching |
| US5525191A (en) * | 1994-07-25 | 1996-06-11 | Motorola, Inc. | Process for polishing a semiconductor substrate |
| US5714418A (en) * | 1995-11-08 | 1998-02-03 | Intel Corporation | Diffusion barrier for electrical interconnects in an integrated circuit |
| EP0779655A3 (en) * | 1995-12-14 | 1997-07-16 | International Business Machines Corporation | A method of chemically-mechanically polishing an electronic component |
| EP0786504A3 (en) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
| US5769689A (en) * | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
| JPH09316431A (ja) * | 1996-05-27 | 1997-12-09 | Showa Kiyabotsuto Super Metal Kk | 研磨用スラリー |
-
1999
- 1999-11-04 US US09/428,965 patent/US6350393B2/en not_active Expired - Lifetime
-
2000
- 2000-10-31 DE DE60009546T patent/DE60009546T2/de not_active Expired - Lifetime
- 2000-10-31 AU AU36390/01A patent/AU3639001A/en not_active Abandoned
- 2000-10-31 WO PCT/US2000/041707 patent/WO2001032793A2/en not_active Ceased
- 2000-10-31 KR KR1020027005704A patent/KR20020077343A/ko not_active Withdrawn
- 2000-10-31 EP EP00991904A patent/EP1234010B1/en not_active Expired - Lifetime
- 2000-10-31 JP JP2001535478A patent/JP2003514061A/ja not_active Withdrawn
- 2000-10-31 AT AT00991904T patent/ATE263224T1/de not_active IP Right Cessation
- 2000-10-31 CN CNB008151466A patent/CN1220742C/zh not_active Expired - Fee Related
- 2000-10-31 HK HK03100847.2A patent/HK1048826A1/zh unknown
- 2000-12-05 TW TW089123290A patent/TW554022B/zh not_active IP Right Cessation
-
2012
- 2012-04-20 JP JP2012096848A patent/JP2012156550A/ja not_active Withdrawn
-
2015
- 2015-05-01 JP JP2015094245A patent/JP6030703B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6030703B2 (ja) | 誘電性ＣＭＰスラリーにおけるＣｓＯＨの使用 | |
| JP2003514061A5 (https=) | ||
| US6143662A (en) | Chemical mechanical polishing composition and method of polishing a substrate | |
| EP0773269B1 (en) | Polishing slurry | |
| EP0777266B1 (en) | Polishing method | |
| US20020129560A1 (en) | Acidic polishing slurry for the chemical-mechanical polishing of SiO2 isolation layers | |
| US7052625B2 (en) | Slurry and use thereof for polishing | |
| JPH0777218B2 (ja) | 同平坦面の金属層および絶縁層の形成方法 | |
| US6429134B1 (en) | Method of manufacturing semiconductor device | |
| US6017803A (en) | Method to prevent dishing in chemical mechanical polishing | |
| JP2004512681A (ja) | 化学機械的研磨スラリー及び研磨方法 | |
| WO1999046081A1 (en) | Multi-step chemical mechanical polishing process and device | |
| JP2003086548A (ja) | 半導体装置の製造方法及びその研磨液 | |
| EP1345734B1 (en) | Crosslinked polyethylene polishing pad for chemical-mechnical polishing and polishing apparatus | |
| WO2021135806A1 (zh) | 一种化学机械抛光液 | |
| TWI629324B (zh) | 研磨基板之方法 | |
| US6846225B2 (en) | Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor | |
| JP4202826B2 (ja) | 有機膜の化学的機械的研磨方法および半導体装置の製造方法 | |
| US7754611B2 (en) | Chemical mechanical polishing process | |
| KR20220058414A (ko) | 화학 기계적 연마 방법 및 이를 이용한 반도체 소자의 제조방법 | |
| US20030013385A1 (en) | Nitride CMP slurry having selectivity to nitride | |
| WO2000002235A1 (en) | Method of planarizing integrated circuits | |
| CN109971354A (zh) | 一种化学机械抛光液 | |
| CN101208399B (zh) | 用于铝的化学机械抛光的浆液 | |
| US6548409B1 (en) | Method of reducing micro-scratches during tungsten CMP |