WO2021135806A1 - 一种化学机械抛光液 - Google Patents

一种化学机械抛光液 Download PDF

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WO2021135806A1
WO2021135806A1 PCT/CN2020/133615 CN2020133615W WO2021135806A1 WO 2021135806 A1 WO2021135806 A1 WO 2021135806A1 CN 2020133615 W CN2020133615 W CN 2020133615W WO 2021135806 A1 WO2021135806 A1 WO 2021135806A1
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polishing liquid
mechanical polishing
chemical mechanical
polishing
acid
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PCT/CN2020/133615
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English (en)
French (fr)
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倪宇飞
姚颖
荆建芬
黄悦锐
马健
杨俊雅
蔡鑫元
汪国豪
陆弘毅
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安集微电子（上海）有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

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  • the invention relates to a chemical mechanical polishing liquid.
  • the CMP process uses an abrasive-containing mixture and a polishing pad to polish the surface of the integrated circuit.
  • the substrate is directly contacted with a rotating polishing pad, and a load is used to apply pressure on the back of the substrate.
  • the pad and the operating table rotate while maintaining a downward force on the back of the substrate to apply abrasive and chemically active solution (usually referred to as polishing liquid or polishing slurry) on the pad.
  • polishing liquid or polishing slurry abrasive and chemically active solution
  • EOE Error-Over-Erosion
  • Butterfly-shaped depressions that is, depressions in the copper wire, are expressed by the height difference between the dielectric layer and the lowest point in the Cu wire.
  • the main reason for the occurrence of dish-shaped depressions is that during the CMP process of copper wiring, the physical and chemical properties of copper, barrier layer, and dielectric layer materials are different, and the polishing rate of different materials is also inconsistent.
  • the copper removal rate is too fast and the barrier layer material and dielectric The layer material is removed slowly, which can easily cause local over-polishing, resulting in serious dish-shaped depressions.
  • a chemical mechanical polishing liquid which includes abrasive particles, a metal corrosion inhibitor, a complexing agent, an oxidizing agent, water, and a polyoxyethylene polyoxypropylene block copolymer surfactant.
  • polyoxyethylene polyoxypropylene block copolymer surfactant is as follows:
  • x, y, z are integers greater than or equal to 0, x+z ⁇ 400 and y ⁇ 100.
  • the HLB value (hydrophilic-lipophilic balance value of the surfactant) of the surfactant at this time is relatively large, showing strong hydrophilicity.
  • this kind of surface Active agents are usually used as wetting agents or O/W (ie, hydrophilic) emulsifiers.
  • O/W hydrophilic
  • the HLB value of the surfactant is relatively small at this time, showing strong lipophilicity and significant defoaming effect. It can also be used as a W/O (ie lipophilic) emulsifier; When this type of surfactant is added in a large amount in the system, it will be difficult to disperse and dissolve due to its poor hydrophilicity. Excessive addition will cause some of the surfactant to delaminate in the system and the polishing solution is unstable. .
  • the molecular weight of the polyoxyethylene polyoxypropylene block copolymer surfactant is 1,000 to 20,000, preferably 1,000 to 5,000.
  • the molecular weight of the surfactant will affect its inhibitory effect on excessive edge erosion to a certain extent.
  • the mass percentage concentration of the polyoxyethylene polyoxypropylene block copolymer surfactant is 0.001 to 0.2 wt%, preferably 0.005 to 0.1 wt%.
  • the abrasive particles are silica, and the mass percentage concentration of the abrasive particles is 2-15 wt%, preferably 3-10 wt%.
  • the particle size of the abrasive particles is 20 to 150 nm, preferably, the particle size of the abrasive particles is 30 to 100 nm.
  • the metal corrosion inhibitor is an azole compound, preferably benzotriazole, tolyltriazole, 1,2,4-triazole, 3-amino-1,2,4-triazole
  • azole preferably benzotriazole, tolyltriazole, 1,2,4-triazole, 3-amino-1,2,4-triazole
  • carboxybenzotriazole 5-methyl-tetrazole, 5-amino-tetrazole, 5-phenyltetrazole, and mercaptophenyltetrazole.
  • the mass percentage concentration of the metal corrosion inhibitor is 0.005 to 0.5 wt%, preferably 0.01 to 0.2 wt%.
  • the complexing agent is an organic acid, an organic amine compound, preferably oxalic acid, malonic acid, succinic acid, citric acid, tartaric acid, glycine, alanine, hydroxyethylene diphosphonic acid, amino trimethylene One or more of phosphonic acid, L-cysteine, ethylenediaminetetraacetic acid, ethylenediamine and/or triethanolamine.
  • the mass percentage concentration of the complexing agent is 0.01-2wt%, preferably 0.05-1wt%.
  • the oxidant is hydrogen peroxide, and the mass percentage concentration of the oxidant is 0.05 to 1 wt%.
  • the pH value of the chemical mechanical polishing liquid is 8-12, preferably 9-11.
  • the chemical mechanical polishing liquid in the present invention may also contain other additives in the art such as pH adjusters and bactericides.
  • the above-mentioned chemical mechanical polishing liquid of the present invention can be prepared by concentration, that is, the abrasive particles, metal corrosion inhibitor, complexing agent, water, and polyoxyethylene polyoxypropylene block copolymer surfactant are mixed to make a concentrated product; Before use, the concentrated product is diluted with deionized water and an oxidizing agent is added to the concentration range of the present invention.
  • wt% in the present invention all refers to the mass percentage concentration.
  • the chemical mechanical polishing liquid of the present invention is suitable for the barrier layer polishing liquid in the copper interconnection process, and is used for the process of polishing at least the barrier metal tantalum, copper, and silicon dioxide dielectric layer, or at least the barrier metal tantalum and copper.
  • Silicon dioxide dielectric layer and low-k material BD black diamond, BD refers to the oxide-like black diamond material containing silicon, oxygen, carbon, and hydrogen
  • BD black diamond, BD refers to the oxide-like black diamond material containing silicon, oxygen, carbon, and hydrogen
  • the polishing solution provided by this patent not only satisfies the polishing of various materials in the barrier layer polishing process Rate and selection ratio requirements, and can well control the dish-shaped depression, and maintain a high removal rate of tantalum and silicon dioxide, while significantly reducing the removal rate of low dielectric constant material BD, to prevent mechanical damage
  • the lower-strength low-dielectric-constant material BD causes mechanical damage and meets the strict requirements for the flatness of the polished interface in the advanced manufacturing process.
  • FIG. 1 is a surface topography profile diagram of the excessive edge erosion (EOE) phenomenon and butterfly depression phenomenon after polishing measured by a step meter after polishing with a chemical mechanical polishing liquid in the prior art.
  • EOE excessive edge erosion
  • FIG. 2 is a surface topography profile diagram of the excessive edge erosion (EOE) phenomenon and butterfly depression phenomenon of the dielectric layer measured by the step meter after polishing with the chemical mechanical polishing liquid of the comparative example.
  • the abscissa in the figure is the length of the path that the step meter sweeps on the surface of the Sematech 754 wafer, in micrometers; the ordinate is the surface undulation measured by the probe, and the unit is (0.1nm).
  • FIG. 3 is a schematic diagram of the chemical mechanical polishing liquid (implementation 1) added with a polyoxyethylene polyoxypropylene block copolymer surfactant of the present application, after polishing, the EOE phenomenon and the butterfly depression phenomenon are significantly improved.
  • the copper (Cu), tantalum (Ta), Silicon dioxide (TEOS) and low dielectric constant material BD are polished.
  • the patterned copper wafers were polished under the following conditions.
  • the graphics chip is a commercially available 12-inch Sematech754 graphics chip.
  • the film material is copper/tantalum/tantalum nitride/TEOS/BD from top to bottom.
  • the polishing process is divided into three steps. The first step is to remove with a commercially available copper polishing solution.
  • the second step uses a commercially available copper polishing solution to remove the remaining copper
  • the third step uses the barrier layer polishing solution of the present invention to remove the barrier layer (tantalum/tantalum nitride), silicon dioxide TEOS, and part of the BD Remove and stop on the BD layer.
  • the polishing time is 60s.
  • the measuring instrument is Bruker Dektak-XT. (The metal pad of the Sematech754 graphics chip is measured along a straight line, and the scanning path length is 500 microns).
  • the butterfly-shaped depression and edge over-erosion depth results are shown in Table 3, Figure 2. image 3.
  • the dish-shaped depression mentioned above refers to the depression on the metal pad before and after the barrier layer is polished
  • the EOE refers to the sharp depression at the boundary between the barrier layer and the copper wire at the edge of the metal pad.
  • the data in Table 3 shows that, compared with the polishing liquid 1 of the comparative example without polyoxyethylene polyoxypropylene block copolymer surfactant (see Figure 2, the butterfly depression and EOE phenomenon in the comparative example are obvious), the present invention
  • the chemical mechanical polishing liquids of the examples in the examples all improve the EOE at the junction of the dielectric layer and the copper wire to varying degrees, and the polishing liquid of the present invention can adjust the polished dish within a certain range by changing the concentration of the surfactant Type depression (see Figure 3, the butterfly depression and EOE phenomenon in the examples of the present application are significantly suppressed); at the same time, for the polishing liquid using abrasive particles of different particle sizes in the present invention, polyoxyethylene polyoxypropylene block
  • copolymer surfactant has a positive effect on the inhibition of edge over-erosion.
  • the chemical mechanical polishing solution of the present application can inhibit the butterfly-shaped depressions in the copper wire during the polishing process, and can effectively reduce and inhibit the excessive erosion of the edge at
  • the chemical mechanical polishing liquid of the present application can effectively reduce and control the generation of excessive erosion at the edge of the boundary between the dielectric material and the copper wire, and can The dish-shaped depression is well controlled; at the same time, the polishing liquid provided by this patent can also meet the requirements of the polishing rate and selection ratio of various materials in the barrier layer polishing process, that is, maintaining high removal of tantalum and silicon dioxide At the same time, it has a significant inhibitory effect on the removal rate of low-k dielectric materials, prevents mechanical damage to low-dielectric constant materials with lower mechanical strength, and meets the strict requirements for the flatness of the polished interface in the advanced manufacturing process.
  • wt% in the present invention all refers to the mass percentage.

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Abstract

一种化学机械抛光液，包括研磨颗粒、金属腐蚀抑制剂、络合剂、氧化剂以及聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂。化学机械抛光液可以有效减少和控制介电材料与铜线边界处的边缘过度侵蚀的产生，在保持较高的钽和二氧化硅的去除速率的同时，对低介电常数材料的去除速率有显著抑制作用，满足阻挡层抛光过程中对各种材料的抛光速率和选择比的要求，能很好的控制抛光后的碟型凹陷，满足先进制程中对抛光界面平整度的严苛要求。

Description

一种化学机械抛光液 技术领域
本发明涉及一种化学机械抛光液。
背景技术
在集成电路制造中，互连技术的标准在提高，随着互连层数的增加和工艺特征尺寸的缩小，对硅片表面平整度的要求也越来越高，如果没有平坦化的能力，在半导体晶圆上创建复杂和密集的结构是非常有限的，化学机械抛光(CMP)方法就是可实现整个硅片平坦化的最有效的方法。
CMP工艺就是使用一种含磨料的混合物和抛光垫抛光集成电路表面。在典型的化学机械抛光方法中，将衬底直接与旋转抛光垫接触，用一载重物在衬底背面施加压力。在抛光期间，垫片和操作台旋转，同时在衬底背面保持向下的力，将磨料和化学活性溶液(通常称为抛光液或抛光浆料)涂于垫片上，该抛光液与正在抛光的薄膜发生化学反应开始进行抛光过程。
随着集成电路技术向45nm及以下技术节点发展以及互连布线密度的急剧增加，互连系统中电阻、电容带来的RC耦合寄生效应迅速增长，影响了器件的速度。为减小这一影响，就必须采用低电容的低介电常数(低k)绝缘材料来降低相邻金属线之间的寄生电容，由于低介电常数材料的机械强度变弱，因而该材料的引入给工艺技术尤其是化机械抛光工艺带来极大的挑战。在CMP过程中不仅需要满足阻挡层抛光过程中对各种材料的抛光速率和选择比的要求，而且要控制抛光后界面的表面平整度。如图1所示，在阻挡层CMP过程中容易出现的介电层与金属边缘的过度侵蚀(Edge-Over-Erosion,EOE)，以及抛光后铜线容易出现蝶型(Dishing)凹陷。EOE在一些相关文献和专利中又称为“犬牙”(Fang)或者边缘裂缝刻蚀(Seam)，该现象的产生是由于铜线边缘处介电材料的磨蚀引起的。EOE较大时会产生严重的后果，因而需要在抛光过程中将该现象减到最低程度或将其消除。蝶型凹陷，即铜线内出现凹陷，用介质层与Cu线内的最低点之间的高度差表示大小。碟型凹陷出现的原因主要是在铜布线的CMP过程中，由于铜、阻挡层、介质层材料物理化学性质均不同，不同材料的抛光速率也不一致，铜去除速率过快而阻挡层材料和介质层材料去除慢，容易造成局部过抛，产生严重的碟型凹陷。
发明内容
为了解决在集成电路制造中的铜互连制程中的阻挡层抛光过程中，化学机械抛光液对各种材料的抛光速率和选择比，抛光后界面平整度和边缘过度侵蚀控制的要求，本发明提供一种化学机械抛光液，包括研磨颗粒、金属腐蚀抑制剂、络合剂、氧化剂、水，以及聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂。
其中，所述聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的结构如下：
Figure PCTCN2020133615-appb-000001
其中，x，y，z为大于等于0的整数，x+z<400且y<100。
当x+z远大于y时，此时表面活性剂的HLB值(表面活性剂的亲水亲油平衡值)较大，体现出较强的亲水性，在本领域的应用中此类表面活性剂通常被用作润湿剂或者O/W(即亲水型)乳化剂。此时，如果加入表面活性剂的浓度过高，会导致抛光液在生产，运输和使用过程中产生大量的泡沫，因此存在最佳的浓度窗口；
当x+z远小于y时，此时表面活性剂的HLB值较小，表现为较强的亲油性，有显著的消泡效应，也可作为W/O(即亲油型)乳化剂；当该类表面活性剂在体系中大量加入时，由于其亲水性较差，会存在难以分散和溶解的现象，过量加入会导致部分表面活性剂在体系中分层、抛光液不稳定等现象。
进一步地，所述聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的分子量为1000～20000,优选1000～5000。表面活性剂的分子量会在一定程度上影响其对边缘过度侵蚀的抑制效应。所述聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的质量百分比浓度为0.001～0.2wt％，优选为0.005～0.1wt％。
其中，所述研磨颗粒为二氧化硅，所述研磨颗粒的质量百分比浓度为2～15wt％，优选为3～10wt％。所述研磨颗粒的粒径为20～150nm，优选的，研磨颗粒的粒径为30～100nm。
其中，所述金属腐蚀抑制剂为唑类化合物，优选为苯并三氮唑、甲基苯并三氮唑、1,2,4-三氮唑、3-氨基-1,2,4-三氮唑、羧基苯并三氮、5-甲基-四氮唑、5-氨基-四氮唑、5-苯基四氮唑、巯基苯基四氮唑中的一种或多种。所述金属腐蚀抑制剂的质量百分比浓度为0.005～0.5wt％，优选为0.01～0.2wt％。
其中，所述络合剂为有机酸、有机胺化合物，优选为草酸、丙二酸、丁二酸、柠檬酸、酒石酸、甘氨酸、丙氨酸、羟基亚乙基二膦酸，氨基三亚甲基膦酸，L-半胱氨酸， 乙二胺四乙酸，乙二胺和/或三乙醇胺中的一种或多种。所述络合剂的质量百分比浓度为0.01～2wt％，优选为0.05～1wt％。
其中，所述氧化剂为过氧化氢，所述氧化剂的质量百分比浓度为0.05～1wt％。
其中，所述化学机械抛光液的pH值为8～12，优选为9～11。
本发明中的化学机械抛光液中，还可以包含pH调节剂和杀菌剂等其他本领域的添加剂。
本发明的上述化学机械抛光液可以采用浓缩制备，即先将研磨颗粒、金属腐蚀抑制剂、络合剂、水、以及聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂混合制成浓缩制品；使用前用去离子水稀释所述浓缩制品并加入氧化剂至本发明所述的浓度范围内。
应当理解的是，本发明所述wt％均指的是质量百分比浓度。
与现有技术相比较，本发明的优势在于：
本发明的化学机械抛光液适用于铜互连制程中的阻挡层抛光液，用于抛光至少包含阻挡层金属钽、铜及二氧化硅介电层的工艺，或者至少包含阻挡层金属钽、铜、二氧化硅介电层及低介电常数(low-k)材料BD(black diamond，BD指含有硅、氧、碳、氢元素的类似氧化物的黑钻石材料)的工艺，可以有效减少和控制介电材料与铜线边界处的边缘过度侵蚀的产生，同时对低k介电材料的去除速率有显著抑制作用，本专利提供的抛光液不仅满足阻挡层抛光过程中对各种材料的抛光速率和选择比的要求，而且能很好的控制碟型凹陷，且保持较高的钽和二氧化硅的去除速率的同时，同时显著降低对低介电常数材料BD的去除速率，防止对机械强度较低的低介电常数材料BD造成机械损伤，满足先进制程中对抛光界面平整度的严苛要求。
附图说明
图1为采用现有技术中的化学机械抛光液进行抛光后，台阶仪测得的抛光后产生的边缘过度侵蚀(EOE)现象和蝶型凹陷现象的表面形貌轮廓图。
图2为使用对比例的化学机械抛光液进行抛光后，台阶仪测得的介电层的边缘过度侵蚀(EOE)现象和蝶型凹陷现象的表面形貌轮廓图。图中横坐标为台阶仪在Sematech 754晶圆表面扫过的路径长度，单位为微米；纵坐标为探针测得的表面起伏，单位为
Figure PCTCN2020133615-appb-000002
(0.1nm)。
图3为本申请的加入聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的化学机械抛光液(实施1)进行抛光后，EOE现象和蝶型凹陷现象显著改善的示意图。
具体实施方式
下面结合附图及具体实施例，详细阐述本发明的优势。
实施例
制备方法：按照表1中的配方制得对比例1～3和实施例1～17的化学机械抛光液，各个组分简单混合即可，用水补足质量浓度至100％。
表1 对比例1～3和本发明的实施例1～17的配方
Figure PCTCN2020133615-appb-000003
Figure PCTCN2020133615-appb-000004
效果实施例1
采用按照表1中的配方制得的对比例1～3的化学机械抛光液和本发明的实施例1～17的化学机械抛光液，按照下述条件对铜(Cu)、钽(Ta)、二氧化硅(TEOS)和低介电常数材料BD进行抛光。抛光条件：抛光机台为12”Reflexion LK机台，抛光垫为Fujibo pad，下压力为1.5psi，转速为抛光盘/抛光头＝93/87rpm，抛光液流速为300ml/min，抛光时间为1min。得到每个对比例和实施例抛光液对铜(Cu)、钽(Ta)、二氧化硅(TEOS)、低介电常数材料BD的去除速率，记于表2。
表2 对比抛光液和本发明抛光液对铜(Cu)、钽(Ta)、二氧化硅(TEOS)、低介电材料(BD)的去除速率
Figure PCTCN2020133615-appb-000005
Figure PCTCN2020133615-appb-000006
结果如表2所示：加入聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的化学机械抛光液对铜，钽，TEOS的去除速率影响不大，同时抑制了低介电常数材料BD的去光速率。在先进制程中，需要去除部分低介电常数材料(BD)并停止在BD材料，因而BD的去除速率不能太高，以便较好地控制抛光过程。当pH过低时(如对比例3所示，pH＝7),钽，TEOS的去除速率过低；当pH过高时(实施例17，pH＝12),虽然去除速率较满足要求，但是抛光液的稳定性较差，不利于长期储存。
效果实施例2
采用按照表1中的配方制得的对比例1～3的化学机械抛光液和本发明的实施例1～17，的化学机械抛光液，按照下述条件对带有图案的铜晶片进行抛光。该图形芯片为市售的12英寸Sematech754图形芯片，膜层材料从上至下为铜/钽/氮化钽/TEOS/BD，抛光过程分三步，第一步用市售的铜抛光液去除大部分的铜，第二步用市售的铜抛光液去除残留 的铜，第三步用本发明的阻挡层抛光液将阻挡层(钽/氮化钽)、二氧化硅TEOS、和部分BD去除并停在BD层上。阻挡层抛光液抛光条件：抛光机台为12”Reflexion LK机台，抛光垫为Fujibo pad，下压力为1.5psi，转速为抛光盘/抛光头＝93/87rpm，抛光液流速为300ml/min，抛光时间为60s。测量仪器为Bruker Dektak-XT。(对Sematech754图形芯片的金属垫沿直线测量，扫描的路径长度为500微米)。蝶形凹陷及边缘过度侵蚀深度结果见表3，图2、图3。
表3 对比抛光液1和本发明抛光液抛光后碟型凹陷以及边缘过度侵蚀(EOE)的深度
Figure PCTCN2020133615-appb-000007
其中，上文中所述碟型凹陷，是指阻挡层抛光前后在金属垫上的凹陷，EOE是指位于金属垫边缘，阻挡层与铜线交界处的尖锐凹陷。
表3的数据表明，与未添加聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的对比例抛光液1(见图2，对比例中的蝶型凹陷和EOE现象明显)相比，本发明中的实施例的化学机械抛光液均不同程度的改善了介电层与铜线交界处的EOE，而且本发明的抛光液可以通过改变表面活性剂的浓度来在一定范围内调节抛光后的碟型凹陷(见图3，本申请的实施例中的蝶型凹陷和EOE现象被显著抑制)；同时对于本发明中使用了不同粒径的研磨颗粒的抛光液，聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的加入对边缘过侵蚀的抑制都产生了正面的影响。综上，本申请的化学机械抛光液可以抑制抛光过程中的铜线内的蝶型凹陷，并且可以有效减少和抑制介电材料与铜线边界处的边缘过度侵蚀现象。
综合上述效果实施例1中的表2和效果实施例2中的表3可知，本申请的化学机械抛光液可以有效减少和控制介电材料与铜线边界处的边缘过度侵蚀的产生，而且能很好的控制碟型凹陷；同时，本专利提供的抛光液还能满足阻挡层抛光过程中对各种材料的抛光速率和选择比的要求，即，保持较高的钽和二氧化硅的去除速率的同时，对低k介电材料的去除速率有显著抑制作用，防止对机械强度较低的低介电常数材料造成机械损伤，满足先进制程中对抛光界面平整度的严苛要求。
应当理解的是，本发明所述wt％均指的是质量百分含量。
以上对本发明的具体实施例进行了详细描述，但其只是作为范例，本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言，任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作的均等变换和修改，都应涵盖在本发明的范围内。

Claims (16)

  1. 一种化学机械抛光液，包括研磨颗粒、金属腐蚀抑制剂、络合剂、氧化剂，以及聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂，所述聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的结构如下：
    Figure PCTCN2020133615-appb-100001
    其中，x，y，z为大于等于0的整数，x+z<400且y<100。
  2. 如权利要求1所述的化学机械抛光液，所述聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的分子量为1000～20000。
  3. 如权利要求2所述的化学机械抛光液，所述聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的分子量为1000～5000。
  4. 如权利要求1所述的化学机械抛光液，所述聚氧乙烯聚氧丙烯嵌段共聚物表面活性剂的质量百分比浓度为0.001～0.2wt％。
  5. 如权利要求4所述的化学机械抛光液，所述聚氧乙烯聚氧丙烯嵌段共聚物的表面活性剂的质量百分比浓度为0.005～0.1wt％。
  6. 如权利要求1所述的化学机械抛光液，所述研磨颗粒为二氧化硅。
  7. 如权利要求1所述的化学机械抛光液，所述研磨颗粒的质量百分比浓度为2～15wt％。
  8. 如权利要求1所述的化学机械抛光液，所述金属腐蚀抑制剂为唑类化合物。
  9. 如权利要求8所述的化学机械抛光液，所述唑类化合物为苯并三氮唑、甲基苯并三氮唑、1,2,4-三氮唑、3-氨基-1,2,4-三氮唑、羧基苯并三氮、5-甲基-四氮唑、5-氨基-四氮唑、5-苯基四氮唑、巯基苯基四氮唑中的一种或多种。
  10. 如权利要求1所述的化学机械抛光液，所述金属腐蚀抑制剂的质量百分比浓度为0.005～0.5wt％。
  11. 如权利要求1所述的化学机械抛光液，所述络合剂为有机酸和/或有机胺化合物。
  12. 如权利要求11所述的化学机械抛光液，所述有机酸为草酸、丙二酸、丁二酸、柠檬酸、酒石酸、甘氨酸、丙氨酸、羟基亚乙基二膦酸，氨基三亚甲基膦酸，L-半胱氨酸，乙二胺四乙酸，所述有机胺为乙二胺和/或三乙醇胺。
  13. 如权利要求1所述的化学机械抛光液，所述络合剂质量百分比浓度为 0.01％～2wt％。
  14. 如权利要求1所述的化学机械抛光液，所述氧化剂为过氧化氢。
  15. 如权利要求1所述的化学机械抛光液，所述氧化剂的质量百分比浓度为0.05～1wt％。
  16. 如权利要求1所述的化学机械抛光液，所述化学机械抛光液的pH值为8～12。
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