AU2003300120A1 - Wordline latching in semiconductor memories - Google Patents
Wordline latching in semiconductor memoriesInfo
- Publication number
- AU2003300120A1 AU2003300120A1 AU2003300120A AU2003300120A AU2003300120A1 AU 2003300120 A1 AU2003300120 A1 AU 2003300120A1 AU 2003300120 A AU2003300120 A AU 2003300120A AU 2003300120 A AU2003300120 A AU 2003300120A AU 2003300120 A1 AU2003300120 A1 AU 2003300120A1
- Authority
- AU
- Australia
- Prior art keywords
- wordline
- latching
- semiconductor memories
- memories
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000015654 memory Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2003/020872 WO2004006261A2 (en) | 2002-07-02 | 2003-07-02 | Wordline latching in semiconductor memories |
AU2003281431 | 2003-07-02 | ||
AU2003256458 | 2003-07-09 | ||
PCT/US2003/021282 WO2004013908A1 (en) | 2002-08-02 | 2003-07-09 | Method of manufacturing multi-level contacts by sizing of contact sizes in integrated circuits |
PCT/US2003/041683 WO2005013282A1 (en) | 2003-07-02 | 2003-12-30 | Wordline latching in semiconductor memories |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003300120A1 true AU2003300120A1 (en) | 2005-02-15 |
Family
ID=34118088
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003300120A Abandoned AU2003300120A1 (en) | 2003-07-02 | 2003-12-30 | Wordline latching in semiconductor memories |
AU2003300121A Abandoned AU2003300121A1 (en) | 2003-07-02 | 2003-12-30 | Method of manufacturing multi-level contacts by sizing of contact sizes in integrated circuits |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003300121A Abandoned AU2003300121A1 (en) | 2003-07-02 | 2003-12-30 | Method of manufacturing multi-level contacts by sizing of contact sizes in integrated circuits |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP2007521630A (ja) |
KR (1) | KR101029384B1 (ja) |
CN (1) | CN1802738A (ja) |
AU (2) | AU2003300120A1 (ja) |
DE (1) | DE10394263B4 (ja) |
GB (1) | GB2420015A (ja) |
WO (2) | WO2005013282A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011044589A (ja) * | 2009-08-21 | 2011-03-03 | Oki Semiconductor Co Ltd | 半導体素子および半導体素子の製造方法 |
JP6486137B2 (ja) * | 2015-02-16 | 2019-03-20 | キヤノン株式会社 | 半導体装置の製造方法 |
JP7069605B2 (ja) * | 2017-08-29 | 2022-05-18 | 富士電機株式会社 | 半導体装置の製造方法 |
US11250895B1 (en) | 2020-11-04 | 2022-02-15 | Qualcomm Incorporated | Systems and methods for driving wordlines using set-reset latches |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2239541B (en) * | 1989-12-29 | 1994-05-18 | Intel Corp | Dual port static memory with one cycle read-modify-write operation |
US5031141A (en) * | 1990-04-06 | 1991-07-09 | Intel Corporation | Apparatus for generating self-timing for on-chip cache |
JPH0574167A (ja) * | 1991-09-17 | 1993-03-26 | Nec Corp | 半導体記憶装置 |
JPH05121369A (ja) * | 1991-10-24 | 1993-05-18 | Oki Electric Ind Co Ltd | 半導体装置のコンタクトホールエツチング方法 |
JPH05267251A (ja) * | 1992-03-18 | 1993-10-15 | Oki Electric Ind Co Ltd | 半導体装置におけるコンタクトホールの形成方法 |
JP3086747B2 (ja) * | 1992-05-07 | 2000-09-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5530677A (en) * | 1994-08-31 | 1996-06-25 | International Business Machines Corporation | Semiconductor memory system having a write control circuit responsive to a system clock and/or a test clock for enabling and disabling a read/write latch |
JPH08316320A (ja) * | 1995-05-22 | 1996-11-29 | Nec Corp | 半導体装置の製造方法 |
JPH10154752A (ja) * | 1996-11-21 | 1998-06-09 | Ricoh Co Ltd | 半導体装置の製造方法 |
US5994780A (en) * | 1997-12-16 | 1999-11-30 | Advanced Micro Devices, Inc. | Semiconductor device with multiple contact sizes |
JP2001044441A (ja) * | 1999-07-29 | 2001-02-16 | Sony Corp | 完全空乏soi型半導体装置及び集積回路 |
DE10054109C2 (de) * | 2000-10-31 | 2003-07-10 | Advanced Micro Devices Inc | Verfahren zum Bilden eines Substratkontakts in einem Feldeffekttransistor, der über einer vergrabenen Isolierschicht gebildet ist |
JP2003045963A (ja) * | 2001-07-30 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
-
2003
- 2003-12-30 CN CNA2003801103715A patent/CN1802738A/zh active Pending
- 2003-12-30 AU AU2003300120A patent/AU2003300120A1/en not_active Abandoned
- 2003-12-30 AU AU2003300121A patent/AU2003300121A1/en not_active Abandoned
- 2003-12-30 JP JP2005507461A patent/JP2007521630A/ja active Pending
- 2003-12-30 GB GB0601531A patent/GB2420015A/en not_active Withdrawn
- 2003-12-30 WO PCT/US2003/041683 patent/WO2005013282A1/en active Application Filing
- 2003-12-30 KR KR1020067000079A patent/KR101029384B1/ko active IP Right Grant
- 2003-12-30 DE DE10394263T patent/DE10394263B4/de not_active Expired - Fee Related
- 2003-12-30 WO PCT/US2003/041684 patent/WO2005013357A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
GB2420015A (en) | 2006-05-10 |
AU2003300121A1 (en) | 2005-02-15 |
WO2005013282A1 (en) | 2005-02-10 |
KR101029384B1 (ko) | 2011-04-15 |
KR20060119856A (ko) | 2006-11-24 |
GB0601531D0 (en) | 2006-03-08 |
WO2005013357A1 (en) | 2005-02-10 |
CN1802738A (zh) | 2006-07-12 |
DE10394263T5 (de) | 2006-04-27 |
DE10394263B4 (de) | 2011-05-26 |
JP2007521630A (ja) | 2007-08-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |