AU2003226425A1 - Method of making transistors - Google Patents

Method of making transistors

Info

Publication number
AU2003226425A1
AU2003226425A1 AU2003226425A AU2003226425A AU2003226425A1 AU 2003226425 A1 AU2003226425 A1 AU 2003226425A1 AU 2003226425 A AU2003226425 A AU 2003226425A AU 2003226425 A AU2003226425 A AU 2003226425A AU 2003226425 A1 AU2003226425 A1 AU 2003226425A1
Authority
AU
Australia
Prior art keywords
aperture
making transistors
substrate
features
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003226425A
Other languages
English (en)
Inventor
Paul F. Baude
Michael A. Haase
Silva K. Theiss
Steven D. Theiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of AU2003226425A1 publication Critical patent/AU2003226425A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/943—Movable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2003226425A 2002-05-02 2003-04-17 Method of making transistors Abandoned AU2003226425A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/137,562 US6667215B2 (en) 2002-05-02 2002-05-02 Method of making transistors
US10/137,562 2002-05-02
PCT/US2003/012022 WO2003094219A1 (en) 2002-05-02 2003-04-17 Method of making transistors

Publications (1)

Publication Number Publication Date
AU2003226425A1 true AU2003226425A1 (en) 2003-11-17

Family

ID=29269106

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003226425A Abandoned AU2003226425A1 (en) 2002-05-02 2003-04-17 Method of making transistors

Country Status (9)

Country Link
US (2) US6667215B2 (enExample)
EP (1) EP1502295B1 (enExample)
JP (1) JP4426438B2 (enExample)
KR (1) KR20040105251A (enExample)
CN (1) CN100372082C (enExample)
AT (1) ATE442673T1 (enExample)
AU (1) AU2003226425A1 (enExample)
DE (1) DE60329177D1 (enExample)
WO (1) WO2003094219A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030151118A1 (en) * 2002-02-14 2003-08-14 3M Innovative Properties Company Aperture masks for circuit fabrication
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
ES2284738T3 (es) * 2002-03-19 2007-11-16 Scheuten Glasgroep Conexion en serie autoajustable de capas delgadas y gruesas y procedimiento de fabricacion.
EP1357602A1 (de) * 2002-03-19 2003-10-29 Scheuten Glasgroep Selbstjustierende Serienverschaltung von Dünnschichten und Verfahren zur Herstellung
DE10212878B4 (de) * 2002-03-22 2007-11-29 Qimonda Ag Halbleiterschaltungsanordnung und Halbleiterspeichereinrichtung
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
JP2004319964A (ja) * 2003-03-28 2004-11-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7556982B2 (en) * 2003-08-07 2009-07-07 Uchicago Argonne, Llc Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates
US7459839B2 (en) * 2003-12-05 2008-12-02 Zhidan Li Tolt Low voltage electron source with self aligned gate apertures, and luminous display using the electron source
US7078937B2 (en) 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
US7772063B2 (en) * 2004-08-11 2010-08-10 Identifi Technologies, Inc. Reduced-step CMOS processes for low-cost radio frequency identification devices
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
EP1815541B1 (en) * 2004-11-09 2011-07-27 Creator Technology B.V. Self-aligned process to manufacture organic transistors
US20060105550A1 (en) * 2004-11-17 2006-05-18 Manish Sharma Method of depositing material on a substrate for a device
DE102004059467A1 (de) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gatter aus organischen Feldeffekttransistoren
US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
JP4938984B2 (ja) * 2005-02-02 2012-05-23 独立行政法人理化学研究所 トップコンタクト型電界効果トランジスタの製造方法およびトップコンタクト型電界効果トランジスタ
KR20060104092A (ko) * 2005-03-29 2006-10-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
US7410907B2 (en) * 2005-03-31 2008-08-12 Lucent Technologies Inc. Fabricating integrated devices using embedded masks
EP1727219B1 (en) 2005-05-25 2014-05-07 Samsung SDI Germany GmbH Organic thin film transistor and method for producing the same
US7615501B2 (en) * 2005-08-11 2009-11-10 3M Innovative Properties Company Method for making a thin film layer
JP5078246B2 (ja) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
US8414962B2 (en) 2005-10-28 2013-04-09 The Penn State Research Foundation Microcontact printed thin film capacitors
JP4722679B2 (ja) * 2005-11-11 2011-07-13 日本電信電話株式会社 電極の製造方法及び素子の製造方法
US20080187651A1 (en) * 2006-10-24 2008-08-07 3M Innovative Properties Company Conductive ink formulations
US20080171422A1 (en) * 2007-01-11 2008-07-17 Tokie Jeffrey H Apparatus and methods for fabrication of thin film electronic devices and circuits
US7960708B2 (en) * 2007-03-13 2011-06-14 University Of Houston Device and method for manufacturing a particulate filter with regularly spaced micropores
US20100096621A1 (en) * 2007-03-23 2010-04-22 Takashi Chuman Organic transistor and manufacture method thereof
US8318552B2 (en) * 2007-06-28 2012-11-27 3M Innovative Properties Company Method for forming gate structures
US20090111086A1 (en) * 2007-10-18 2009-04-30 Katz Howard E Kit for facile deposition and evaluation of semiconductor devices
KR20100054630A (ko) * 2008-11-14 2010-05-25 엘지디스플레이 주식회사 유기 박막 트랜지스터와 이의 제조방법 그리고 이를 이용한표시장치
US9625878B2 (en) 2009-03-10 2017-04-18 Drexel University Dynamic time multiplexing fabrication of holographic polymer dispersed liquid crystals for increased wavelength sensitivity
WO2012058652A2 (en) 2010-10-29 2012-05-03 Drexel University Tunable electro-optic filter stack
KR20110138343A (ko) * 2009-04-10 2011-12-27 미쓰비시 가가꾸 가부시키가이샤 전계 효과 트랜지스터, 그 제조 방법 및 그것을 사용한 전자 디바이스
WO2012086609A1 (ja) * 2010-12-22 2012-06-28 三菱化学株式会社 電界効果トランジスタ、その製造方法及びそれを有する電子デバイス
US10008443B2 (en) 2012-04-30 2018-06-26 California Institute Of Technology Implant device
WO2013165599A1 (en) * 2012-04-30 2013-11-07 California Institute Of Technology High-lead count implant device and method of making the same
US9781842B2 (en) 2013-08-05 2017-10-03 California Institute Of Technology Long-term packaging for the protection of implant electronics
US10274819B2 (en) * 2015-02-05 2019-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. EUV pellicle fabrication methods and structures thereof
CN108024851A (zh) * 2015-08-28 2018-05-11 加州理工学院 植入装置及其制造方法
CN108735915B (zh) * 2017-04-14 2021-02-09 上海视涯技术有限公司 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法
JP2019533761A (ja) * 2017-09-27 2019-11-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板をマスクするためのマスク装置、基板を処理するための装置、およびその方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US195929A (en) * 1877-10-09 Improvement in take-ups for knitting-machines
US100779A (en) * 1870-03-15 Improved animal-trap
US150384A (en) * 1874-04-28 Improvement in valve-motions
US152691A (en) * 1874-06-30 Improvement in ironing-boards
US151118A (en) * 1874-05-19 Improvement in carrbkakes
US105365A (en) * 1870-07-12 Improvement in corn-planter
US3851379A (en) * 1973-05-16 1974-12-03 Westinghouse Electric Corp Solid state components
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
NL7413977A (nl) * 1974-10-25 1976-04-27 Philips Nv Aanbrengen van een geleiderlaagpatroon met op een geringe onderlinge afstand gelegen delen, in het bijzonder bij de vervaardiging van half- geleiderinrichtingen.
JPS52147063A (en) * 1976-06-02 1977-12-07 Toshiba Corp Semiconductor electrode forming method
JPS5462984A (en) * 1978-09-22 1979-05-21 Hitachi Ltd Masking deposition method
US4262296A (en) * 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure
DE3128982C2 (de) * 1981-07-22 1985-12-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung mindestens eines Josephson-Tunnelelementes
US4469719A (en) * 1981-12-21 1984-09-04 Applied Magnetics-Magnetic Head Divison Corporation Method for controlling the edge gradient of a layer of deposition material
DE3604368A1 (de) * 1985-02-13 1986-08-14 Sharp K.K., Osaka Verfahren zur herstellung eines duennfilm-transistors
US4776868A (en) * 1985-09-09 1988-10-11 Corning Glass Works Lenses and lens arrays
US4679311A (en) * 1985-12-12 1987-07-14 Allied Corporation Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
US4883770A (en) * 1986-09-19 1989-11-28 Hewlett-Packard Company Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication
JPS63172121A (ja) * 1987-01-09 1988-07-15 Matsushita Electric Ind Co Ltd 液晶表示パネルの製造法
JP2813428B2 (ja) * 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
FR2662290B1 (fr) 1990-05-15 1992-07-24 France Telecom Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.
GB9114018D0 (en) 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
US5294870A (en) 1991-12-30 1994-03-15 Eastman Kodak Company Organic electroluminescent multicolor image display device
US5294869A (en) 1991-12-30 1994-03-15 Eastman Kodak Company Organic electroluminescent multicolor image display device
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
CN1095204C (zh) * 1993-03-12 2002-11-27 株式会社半导体能源研究所 半导体器件和晶体管
US5641611A (en) 1995-08-21 1997-06-24 Motorola Method of fabricating organic LED matrices
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US5612228A (en) * 1996-04-24 1997-03-18 Motorola Method of making CMOS with organic and inorganic semiconducting region
US6037712A (en) 1996-06-10 2000-03-14 Tdk Corporation Organic electroluminescence display device and producing method thereof
JP2833605B2 (ja) * 1997-02-07 1998-12-09 日本電気株式会社 発光ディスプレイの製造方法
JP3999837B2 (ja) 1997-02-10 2007-10-31 Ｔｄｋ株式会社 有機エレクトロルミネッセンス表示装置
US5946551A (en) * 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
JPH10319870A (ja) * 1997-05-15 1998-12-04 Nec Corp シャドウマスク及びこれを用いたカラー薄膜ｅｌ表示装置の製造方法
US6528816B1 (en) * 1998-06-19 2003-03-04 Thomas Jackson Integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
KR100451381B1 (ko) * 1998-07-30 2005-06-01 엘지.필립스 엘시디 주식회사 박막트랜지스터및그제조방법
GB9817745D0 (en) 1998-08-15 1998-10-14 Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuit elements
JP2000132762A (ja) 1998-10-27 2000-05-12 Matsushita Electric Works Ltd 受光量表示ユニット付き光電式分離型感知器及び波形確認端子ユニット付き光電式分離型感知器
US6384529B2 (en) 1998-11-18 2002-05-07 Eastman Kodak Company Full color active matrix organic electroluminescent display panel having an integrated shadow mask
DE60043441D1 (de) 1999-07-21 2010-01-14 E Ink Corp Bevorzugte methode, elektrische leiterbahnen für dellen
JP4053209B2 (ja) 2000-05-01 2008-02-27 三星エスディアイ株式会社 有機ｅｌディスプレイの製造方法
JP2002050764A (ja) * 2000-08-02 2002-02-15 Matsushita Electric Ind Co Ltd 薄膜トランジスタ、アレイ基板、液晶表示装置、有機ｅｌ表示装置およびその製造方法
US6791258B2 (en) 2001-06-21 2004-09-14 3M Innovative Properties Company Organic light emitting full color display panel
AU2002327747A1 (en) 2001-09-27 2003-04-07 3M Innovative Properties Company Substituted pentacene semiconductors
US20030097010A1 (en) 2001-09-27 2003-05-22 Vogel Dennis E. Process for preparing pentacene derivatives
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US20030151118A1 (en) 2002-02-14 2003-08-14 3M Innovative Properties Company Aperture masks for circuit fabrication
US6897164B2 (en) 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication

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DE60329177D1 (de) 2009-10-22
JP2005531131A (ja) 2005-10-13
WO2003094219A1 (en) 2003-11-13
US20030207505A1 (en) 2003-11-06
KR20040105251A (ko) 2004-12-14
EP1502295A1 (en) 2005-02-02
US6806520B2 (en) 2004-10-19
CN100372082C (zh) 2008-02-27
US6667215B2 (en) 2003-12-23
EP1502295B1 (en) 2009-09-09
CN1650409A (zh) 2005-08-03
JP4426438B2 (ja) 2010-03-03
US20040106262A1 (en) 2004-06-03

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