AU2002334385A1 - Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices - Google Patents

Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices

Info

Publication number
AU2002334385A1
AU2002334385A1 AU2002334385A AU2002334385A AU2002334385A1 AU 2002334385 A1 AU2002334385 A1 AU 2002334385A1 AU 2002334385 A AU2002334385 A AU 2002334385A AU 2002334385 A AU2002334385 A AU 2002334385A AU 2002334385 A1 AU2002334385 A1 AU 2002334385A1
Authority
AU
Australia
Prior art keywords
microoptoelectronic
gas absorbing
support
micromechanical devices
absorbing material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002334385A
Other languages
English (en)
Inventor
Marco Amiotti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SAES Getters SpA
Original Assignee
SAES Getters SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IT2001MI001557A external-priority patent/ITMI20011557A1/it
Priority claimed from IT2002MI000689A external-priority patent/ITMI20020689A1/it
Application filed by SAES Getters SpA filed Critical SAES Getters SpA
Publication of AU2002334385A1 publication Critical patent/AU2002334385A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7438—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Micromachines (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
AU2002334385A 2001-07-20 2002-07-16 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices Abandoned AU2002334385A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IT2001MI001557A ITMI20011557A1 (it) 2001-07-20 2001-07-20 Supporto per la produzione di dispositivi microelettronici microoptoelettronici o micromeccanici con deposito integrato di materiale getter
ITMI2001A001557 2001-07-20
ITMI2002A000689 2002-04-03
IT2002MI000689A ITMI20020689A1 (it) 2002-04-03 2002-04-03 Supporto per la produzione di dispositivi microeletronici microoptoelettronici o micromeccanici con deposito integrato di materiale assorbit
PCT/IT2002/000465 WO2003009317A2 (en) 2001-07-20 2002-07-16 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices

Publications (1)

Publication Number Publication Date
AU2002334385A1 true AU2002334385A1 (en) 2003-03-03

Family

ID=26332782

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002334385A Abandoned AU2002334385A1 (en) 2001-07-20 2002-07-16 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices

Country Status (14)

Country Link
US (3) US7180163B2 (https=)
EP (1) EP1410433B1 (https=)
JP (1) JP4831931B2 (https=)
KR (1) KR100554492B1 (https=)
CN (1) CN100355045C (https=)
AT (1) ATE291777T1 (https=)
AU (1) AU2002334385A1 (https=)
CA (1) CA2447282C (https=)
DE (1) DE60203394T2 (https=)
DK (1) DK1410433T3 (https=)
ES (1) ES2238062T3 (https=)
MY (1) MY128708A (https=)
TW (1) TW583049B (https=)
WO (1) WO2003009317A2 (https=)

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TW533188B (en) * 2001-07-20 2003-05-21 Getters Spa Support for microelectronic, microoptoelectronic or micromechanical devices
TW583049B (en) * 2001-07-20 2004-04-11 Getters Spa Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
US6867543B2 (en) * 2003-03-31 2005-03-15 Motorola, Inc. Microdevice assembly having a fine grain getter layer for maintaining vacuum
US7164520B2 (en) 2004-05-12 2007-01-16 Idc, Llc Packaging for an interferometric modulator
US7184202B2 (en) * 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
US7710629B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. System and method for display device with reinforcing substance
US7551246B2 (en) 2004-09-27 2009-06-23 Idc, Llc. System and method for display device with integrated desiccant
US20060076632A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method for display device with activated desiccant
WO2007136706A1 (en) 2006-05-17 2007-11-29 Qualcomm Mems Technologies Inc. Desiccant in a mems device
US7816164B2 (en) 2006-12-01 2010-10-19 Qualcomm Mems Technologies, Inc. MEMS processing
US8093698B2 (en) * 2006-12-05 2012-01-10 Spansion Llc Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device
JP2009522104A (ja) 2006-12-15 2009-06-11 ビ−エイイ− システムズ パブリック リミテッド カンパニ− 薄膜ゲッタ装置に関する改善
EP2116508A3 (en) 2007-09-28 2010-10-13 QUALCOMM MEMS Technologies, Inc. Optimization of desiccant usage in a MEMS package
ITMI20090410A1 (it) 2009-03-18 2010-09-19 Getters Spa Leghe getter non evaporabili adatte particolarmente per l'assorbimento di idrogeno
FR2967150A1 (fr) * 2010-11-09 2012-05-11 Commissariat Energie Atomique Procédé de réalisation de substrat a couches enfouies de matériau getter
US8628996B2 (en) 2011-06-15 2014-01-14 International Business Machines Corporation Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells
US20130049143A1 (en) * 2011-08-26 2013-02-28 Qualcomm Mems Technologies, Inc. Release activated thin film getter
US9102511B2 (en) 2012-06-08 2015-08-11 Texas Instruments Incorporated Hermetic plastic molded MEMS device package and method of fabrication
US8889456B2 (en) 2012-08-29 2014-11-18 International Business Machines Corporation Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells
US10160638B2 (en) 2013-01-04 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a semiconductor structure
DE102017210459A1 (de) 2017-06-22 2018-12-27 Robert Bosch Gmbh Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne
WO2023186704A1 (en) * 2022-04-01 2023-10-05 Saes Getters S.P.A. Substrate comprising a base and an integrated getter film for manufacturing microelectronic devices

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US5229306A (en) * 1989-12-27 1993-07-20 Texas Instruments Incorporated Backside gettering method employing a monocrystalline germanium-silicon layer
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US5599749A (en) * 1994-10-21 1997-02-04 Yamaha Corporation Manufacture of micro electron emitter
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US5614785A (en) * 1995-09-28 1997-03-25 Texas Instruments Incorporated Anode plate for flat panel display having silicon getter
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Also Published As

Publication number Publication date
MY128708A (en) 2007-02-28
CA2447282A1 (en) 2003-01-30
ES2238062T3 (es) 2005-08-16
EP1410433A2 (en) 2004-04-21
US7180163B2 (en) 2007-02-20
JP2005513758A (ja) 2005-05-12
WO2003009317A2 (en) 2003-01-30
CA2447282C (en) 2008-05-06
HK1076539A1 (en) 2006-01-20
US20080038861A1 (en) 2008-02-14
ATE291777T1 (de) 2005-04-15
US20070210431A1 (en) 2007-09-13
JP4831931B2 (ja) 2011-12-07
DE60203394T2 (de) 2006-03-23
KR20040018282A (ko) 2004-03-02
DK1410433T3 (da) 2005-06-27
CN1620722A (zh) 2005-05-25
DE60203394D1 (de) 2005-04-28
CN100355045C (zh) 2007-12-12
WO2003009317A3 (en) 2003-09-25
US20040048449A1 (en) 2004-03-11
US8105860B2 (en) 2012-01-31
KR100554492B1 (ko) 2006-03-03
EP1410433B1 (en) 2005-03-23
US8193623B2 (en) 2012-06-05
TW583049B (en) 2004-04-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase