KR100554492B1 - 마이크로 전자, 마이크로 광전자 또는 마이크로 기계장치를 제조하기 위한 가스 흡수 물질의 증착물이 집적된지지체 - Google Patents

마이크로 전자, 마이크로 광전자 또는 마이크로 기계장치를 제조하기 위한 가스 흡수 물질의 증착물이 집적된지지체 Download PDF

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Publication number
KR100554492B1
KR100554492B1 KR1020037016721A KR20037016721A KR100554492B1 KR 100554492 B1 KR100554492 B1 KR 100554492B1 KR 1020037016721 A KR1020037016721 A KR 1020037016721A KR 20037016721 A KR20037016721 A KR 20037016721A KR 100554492 B1 KR100554492 B1 KR 100554492B1
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South Korea
Prior art keywords
support
gas
layer
absorbing material
gas absorbing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020037016721A
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English (en)
Korean (ko)
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KR20040018282A (ko
Inventor
마르코 아미오띠
Original Assignee
사에스 게터스 에스.페.아.
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Publication date
Priority claimed from IT2001MI001557A external-priority patent/ITMI20011557A1/it
Priority claimed from IT2002MI000689A external-priority patent/ITMI20020689A1/it
Application filed by 사에스 게터스 에스.페.아. filed Critical 사에스 게터스 에스.페.아.
Publication of KR20040018282A publication Critical patent/KR20040018282A/ko
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Publication of KR100554492B1 publication Critical patent/KR100554492B1/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7438—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Micromachines (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
KR1020037016721A 2001-07-20 2002-07-16 마이크로 전자, 마이크로 광전자 또는 마이크로 기계장치를 제조하기 위한 가스 흡수 물질의 증착물이 집적된지지체 Expired - Lifetime KR100554492B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IT2001MI001557A ITMI20011557A1 (it) 2001-07-20 2001-07-20 Supporto per la produzione di dispositivi microelettronici microoptoelettronici o micromeccanici con deposito integrato di materiale getter
ITMI2001A001557 2001-07-20
ITMI2002A000689 2002-04-03
IT2002MI000689A ITMI20020689A1 (it) 2002-04-03 2002-04-03 Supporto per la produzione di dispositivi microeletronici microoptoelettronici o micromeccanici con deposito integrato di materiale assorbit
PCT/IT2002/000465 WO2003009317A2 (en) 2001-07-20 2002-07-16 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices

Publications (2)

Publication Number Publication Date
KR20040018282A KR20040018282A (ko) 2004-03-02
KR100554492B1 true KR100554492B1 (ko) 2006-03-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037016721A Expired - Lifetime KR100554492B1 (ko) 2001-07-20 2002-07-16 마이크로 전자, 마이크로 광전자 또는 마이크로 기계장치를 제조하기 위한 가스 흡수 물질의 증착물이 집적된지지체

Country Status (14)

Country Link
US (3) US7180163B2 (https=)
EP (1) EP1410433B1 (https=)
JP (1) JP4831931B2 (https=)
KR (1) KR100554492B1 (https=)
CN (1) CN100355045C (https=)
AT (1) ATE291777T1 (https=)
AU (1) AU2002334385A1 (https=)
CA (1) CA2447282C (https=)
DE (1) DE60203394T2 (https=)
DK (1) DK1410433T3 (https=)
ES (1) ES2238062T3 (https=)
MY (1) MY128708A (https=)
TW (1) TW583049B (https=)
WO (1) WO2003009317A2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW533188B (en) * 2001-07-20 2003-05-21 Getters Spa Support for microelectronic, microoptoelectronic or micromechanical devices
TW583049B (en) * 2001-07-20 2004-04-11 Getters Spa Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
US6867543B2 (en) * 2003-03-31 2005-03-15 Motorola, Inc. Microdevice assembly having a fine grain getter layer for maintaining vacuum
US7164520B2 (en) 2004-05-12 2007-01-16 Idc, Llc Packaging for an interferometric modulator
US7184202B2 (en) * 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
US7710629B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. System and method for display device with reinforcing substance
US7551246B2 (en) 2004-09-27 2009-06-23 Idc, Llc. System and method for display device with integrated desiccant
US20060076632A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method for display device with activated desiccant
WO2007136706A1 (en) 2006-05-17 2007-11-29 Qualcomm Mems Technologies Inc. Desiccant in a mems device
US7816164B2 (en) 2006-12-01 2010-10-19 Qualcomm Mems Technologies, Inc. MEMS processing
US8093698B2 (en) * 2006-12-05 2012-01-10 Spansion Llc Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device
JP2009522104A (ja) 2006-12-15 2009-06-11 ビ−エイイ− システムズ パブリック リミテッド カンパニ− 薄膜ゲッタ装置に関する改善
EP2116508A3 (en) 2007-09-28 2010-10-13 QUALCOMM MEMS Technologies, Inc. Optimization of desiccant usage in a MEMS package
ITMI20090410A1 (it) 2009-03-18 2010-09-19 Getters Spa Leghe getter non evaporabili adatte particolarmente per l'assorbimento di idrogeno
FR2967150A1 (fr) * 2010-11-09 2012-05-11 Commissariat Energie Atomique Procédé de réalisation de substrat a couches enfouies de matériau getter
US8628996B2 (en) 2011-06-15 2014-01-14 International Business Machines Corporation Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells
US20130049143A1 (en) * 2011-08-26 2013-02-28 Qualcomm Mems Technologies, Inc. Release activated thin film getter
US9102511B2 (en) 2012-06-08 2015-08-11 Texas Instruments Incorporated Hermetic plastic molded MEMS device package and method of fabrication
US8889456B2 (en) 2012-08-29 2014-11-18 International Business Machines Corporation Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells
US10160638B2 (en) 2013-01-04 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a semiconductor structure
DE102017210459A1 (de) 2017-06-22 2018-12-27 Robert Bosch Gmbh Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne
WO2023186704A1 (en) * 2022-04-01 2023-10-05 Saes Getters S.P.A. Substrate comprising a base and an integrated getter film for manufacturing microelectronic devices

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3214381A (en) * 1962-12-05 1965-10-26 Bell Telephone Labor Inc Barium oxide moisture getter preparation
JPS56137658A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS63198320A (ja) * 1987-02-13 1988-08-17 Mitsubishi Electric Corp 結晶成長方法
US5229306A (en) * 1989-12-27 1993-07-20 Texas Instruments Incorporated Backside gettering method employing a monocrystalline germanium-silicon layer
KR0139489B1 (ko) 1993-07-08 1998-06-01 호소야 레이지 전계방출형 표시장치
CA2179052C (en) 1993-12-13 2001-02-13 Robert E. Higashi Integrated silicon vacuum micropackage for infrared devices
US5453659A (en) 1994-06-10 1995-09-26 Texas Instruments Incorporated Anode plate for flat panel display having integrated getter
JP2806277B2 (ja) * 1994-10-13 1998-09-30 日本電気株式会社 半導体装置及びその製造方法
US5599749A (en) * 1994-10-21 1997-02-04 Yamaha Corporation Manufacture of micro electron emitter
CA2162095A1 (en) * 1994-12-27 1996-06-28 Jeffery Alan Demeritt Getter housing for electronic packages
US5610438A (en) * 1995-03-08 1997-03-11 Texas Instruments Incorporated Micro-mechanical device with non-evaporable getter
US5668018A (en) 1995-06-07 1997-09-16 International Business Machines Corporation Method for defining a region on a wall of a semiconductor structure
US5614785A (en) * 1995-09-28 1997-03-25 Texas Instruments Incorporated Anode plate for flat panel display having silicon getter
JP3324395B2 (ja) * 1995-10-31 2002-09-17 富士電機株式会社 電界型真空管とそれを用いた圧力センサ、加速度センサおよびそれらの製造方法
US5837935A (en) 1996-02-26 1998-11-17 Ford Motor Company Hermetic seal for an electronic component having a secondary chamber
JPH09306920A (ja) * 1996-05-20 1997-11-28 Hitachi Ltd 半導体集積回路装置およびその製造方法
US5760433A (en) 1996-05-31 1998-06-02 Hughes Electronics In situ reactive layers for protection of ferroelectric integrated circuits
IT1283484B1 (it) 1996-07-23 1998-04-21 Getters Spa Metodo per la produzione di strati sottili supportati di materiale getter non-evaporabile e dispositivi getter cosi' prodotti
CN1180239A (zh) * 1996-08-01 1998-04-29 西门子公司 掺杂硅基片
US6673400B1 (en) * 1996-10-15 2004-01-06 Texas Instruments Incorporated Hydrogen gettering system
JPH10176768A (ja) * 1996-11-27 1998-06-30 Xerox Corp マイクロデバイス支持システム及びマイクロデバイスのアレイ
JPH10188460A (ja) 1996-12-25 1998-07-21 Sony Corp 光ディスク装置及び光ディスク記録媒体
IT1290451B1 (it) * 1997-04-03 1998-12-03 Getters Spa Leghe getter non evaporabili
US5921461A (en) 1997-06-11 1999-07-13 Raytheon Company Vacuum package having vacuum-deposited local getter and its preparation
US5951750A (en) * 1997-06-19 1999-09-14 Engelhard Corporation Anti-yellowing polyolefin compositions containing pearlescent pigment to prevent yellowing and method therefore
US5961362A (en) * 1997-09-09 1999-10-05 Motorola, Inc. Method for in situ cleaning of electron emitters in a field emission device
US5866978A (en) * 1997-09-30 1999-02-02 Fed Corporation Matrix getter for residual gas in vacuum sealed panels
JP4137230B2 (ja) 1998-04-18 2008-08-20 東洋電装株式会社 ウォッシャスイッチの可動接点取付構造
US6499354B1 (en) * 1998-05-04 2002-12-31 Integrated Sensing Systems (Issys), Inc. Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices
JP2000019044A (ja) * 1998-07-03 2000-01-21 Teijin Seiki Co Ltd 真空圧力センサ
US6843936B1 (en) 1998-10-22 2005-01-18 Texas Instruments Incorporated Getter for enhanced micromechanical device performance
IT1312248B1 (it) * 1999-04-12 2002-04-09 Getters Spa Metodo per aumentare la produttivita' di processi di deposizione distrati sottili su un substrato e dispositivi getter per la
US6534850B2 (en) 2001-04-16 2003-03-18 Hewlett-Packard Company Electronic device sealed under vacuum containing a getter and method of operation
TW583049B (en) * 2001-07-20 2004-04-11 Getters Spa Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
TW533188B (en) 2001-07-20 2003-05-21 Getters Spa Support for microelectronic, microoptoelectronic or micromechanical devices
EP1310380A1 (en) 2001-11-07 2003-05-14 SensoNor asa A micro-mechanical device and method for producing the same
US6923625B2 (en) 2002-01-07 2005-08-02 Integrated Sensing Systems, Inc. Method of forming a reactive material and article formed thereby

Also Published As

Publication number Publication date
MY128708A (en) 2007-02-28
AU2002334385A1 (en) 2003-03-03
CA2447282A1 (en) 2003-01-30
ES2238062T3 (es) 2005-08-16
EP1410433A2 (en) 2004-04-21
US7180163B2 (en) 2007-02-20
JP2005513758A (ja) 2005-05-12
WO2003009317A2 (en) 2003-01-30
CA2447282C (en) 2008-05-06
HK1076539A1 (en) 2006-01-20
US20080038861A1 (en) 2008-02-14
ATE291777T1 (de) 2005-04-15
US20070210431A1 (en) 2007-09-13
JP4831931B2 (ja) 2011-12-07
DE60203394T2 (de) 2006-03-23
KR20040018282A (ko) 2004-03-02
DK1410433T3 (da) 2005-06-27
CN1620722A (zh) 2005-05-25
DE60203394D1 (de) 2005-04-28
CN100355045C (zh) 2007-12-12
WO2003009317A3 (en) 2003-09-25
US20040048449A1 (en) 2004-03-11
US8105860B2 (en) 2012-01-31
EP1410433B1 (en) 2005-03-23
US8193623B2 (en) 2012-06-05
TW583049B (en) 2004-04-11

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