JP4831931B2 - マイクロエレクトロニクス、マイクロオプトエレクトロニクスまたはマイクロメカニクスのデバイスを製造するための気体吸収物質の集積堆積物を有する支持体 - Google Patents
マイクロエレクトロニクス、マイクロオプトエレクトロニクスまたはマイクロメカニクスのデバイスを製造するための気体吸収物質の集積堆積物を有する支持体 Download PDFInfo
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- JP4831931B2 JP4831931B2 JP2003514571A JP2003514571A JP4831931B2 JP 4831931 B2 JP4831931 B2 JP 4831931B2 JP 2003514571 A JP2003514571 A JP 2003514571A JP 2003514571 A JP2003514571 A JP 2003514571A JP 4831931 B2 JP4831931 B2 JP 4831931B2
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- 238000004377 microelectronic Methods 0.000 title claims abstract description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 239000002250 absorbent Substances 0.000 claims description 5
- 230000002745 absorbent Effects 0.000 claims description 5
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- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
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- 238000005234 chemical deposition Methods 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 238000004806 packaging method and process Methods 0.000 description 1
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- 208000017983 photosensitivity disease Diseases 0.000 description 1
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- 239000002243 precursor Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical group 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Micromachines (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Description
明確に記載するために、図においては、本発明の支持体は、実際の寸法に関して、高さ-直径の比が著しく誇張されて示されている。さらに、図においては、支持体はいつもウエハの幾何学的形態、すなわち低い円盤の物質で示されている。というのは、これは固体デバイスの製造業者に一般的に採用された形態であるからであるが、この形態はまた異なることができ、例えば正方形または長方形であることができる。
Claims (5)
- 異なる電気もしくは磁気機能性を有する材料層を堆積及び選択除去技術により積層した後切断することにより、複数のマイクロエレクトロニクス、マイクロオプトエレクトロニクスまたはマイクロメカニクスのデバイスを製造するために用いられる、気体吸収物質の集積された堆積物を有する支持体(10;20)であって、機械的支持の機能を有する基板(11;21)、該基板の表面(12;23)上の気体吸収物質(14;25)の連続(13)もしくは不連続(24、24’、...)堆積物および、III-V族物質又はケイ素でできている、該気体吸収物質堆積物を完全に覆う層(15;26)を含む支持体。
- 該気体吸収物質堆積物(13)が該基板(11)の全表面(12)上に連続している請求項1記載の支持体(10)。
- 該気体吸収物質堆積物が、該基板(21)の該表面(23)上に別個の堆積物(24、24’、...)の形態である請求項1記載の支持体(20)。
- 該気体吸収物質の連続もしくは不連続堆積物が、0.1〜5μmの範囲内の厚みを有する請求項1記載の支持体。
- 請求項1記載の支持体を、マイクロメカニクスデバイス(70)の製造における被覆要素(60)として使用する方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT2001MI001557A ITMI20011557A1 (it) | 2001-07-20 | 2001-07-20 | Supporto per la produzione di dispositivi microelettronici microoptoelettronici o micromeccanici con deposito integrato di materiale getter |
ITMI2001A001557 | 2001-07-20 | ||
IT2002MI000689A ITMI20020689A1 (it) | 2002-04-03 | 2002-04-03 | Supporto per la produzione di dispositivi microeletronici microoptoelettronici o micromeccanici con deposito integrato di materiale assorbit |
ITMI2002A000689 | 2002-04-03 | ||
PCT/IT2002/000465 WO2003009317A2 (en) | 2001-07-20 | 2002-07-16 | Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005513758A JP2005513758A (ja) | 2005-05-12 |
JP2005513758A5 JP2005513758A5 (ja) | 2006-01-05 |
JP4831931B2 true JP4831931B2 (ja) | 2011-12-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003514571A Expired - Lifetime JP4831931B2 (ja) | 2001-07-20 | 2002-07-16 | マイクロエレクトロニクス、マイクロオプトエレクトロニクスまたはマイクロメカニクスのデバイスを製造するための気体吸収物質の集積堆積物を有する支持体 |
Country Status (15)
Country | Link |
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US (3) | US7180163B2 (ja) |
EP (1) | EP1410433B1 (ja) |
JP (1) | JP4831931B2 (ja) |
KR (1) | KR100554492B1 (ja) |
CN (1) | CN100355045C (ja) |
AT (1) | ATE291777T1 (ja) |
AU (1) | AU2002334385A1 (ja) |
CA (1) | CA2447282C (ja) |
DE (1) | DE60203394T2 (ja) |
DK (1) | DK1410433T3 (ja) |
ES (1) | ES2238062T3 (ja) |
HK (1) | HK1076539A1 (ja) |
MY (1) | MY128708A (ja) |
TW (1) | TW583049B (ja) |
WO (1) | WO2003009317A2 (ja) |
Families Citing this family (22)
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TW583049B (en) * | 2001-07-20 | 2004-04-11 | Getters Spa | Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices |
TW533188B (en) * | 2001-07-20 | 2003-05-21 | Getters Spa | Support for microelectronic, microoptoelectronic or micromechanical devices |
US6867543B2 (en) * | 2003-03-31 | 2005-03-15 | Motorola, Inc. | Microdevice assembly having a fine grain getter layer for maintaining vacuum |
US7164520B2 (en) | 2004-05-12 | 2007-01-16 | Idc, Llc | Packaging for an interferometric modulator |
US7710629B2 (en) | 2004-09-27 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | System and method for display device with reinforcing substance |
US7184202B2 (en) * | 2004-09-27 | 2007-02-27 | Idc, Llc | Method and system for packaging a MEMS device |
US20060076632A1 (en) * | 2004-09-27 | 2006-04-13 | Lauren Palmateer | System and method for display device with activated desiccant |
US7551246B2 (en) | 2004-09-27 | 2009-06-23 | Idc, Llc. | System and method for display device with integrated desiccant |
US8040587B2 (en) | 2006-05-17 | 2011-10-18 | Qualcomm Mems Technologies, Inc. | Desiccant in a MEMS device |
US7816164B2 (en) | 2006-12-01 | 2010-10-19 | Qualcomm Mems Technologies, Inc. | MEMS processing |
US8093698B2 (en) * | 2006-12-05 | 2012-01-10 | Spansion Llc | Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device |
US8663789B2 (en) | 2006-12-15 | 2014-03-04 | Bae Systems Plc | Thin film getter devices |
EP2064148A1 (en) | 2007-09-28 | 2009-06-03 | Qualcomm Mems Technologies, Inc | Optimization of desiccant usage in a mems package |
ITMI20090410A1 (it) | 2009-03-18 | 2010-09-19 | Getters Spa | Leghe getter non evaporabili adatte particolarmente per l'assorbimento di idrogeno |
FR2967150A1 (fr) * | 2010-11-09 | 2012-05-11 | Commissariat Energie Atomique | Procédé de réalisation de substrat a couches enfouies de matériau getter |
US8628996B2 (en) | 2011-06-15 | 2014-01-14 | International Business Machines Corporation | Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells |
US20130049143A1 (en) * | 2011-08-26 | 2013-02-28 | Qualcomm Mems Technologies, Inc. | Release activated thin film getter |
US9102511B2 (en) | 2012-06-08 | 2015-08-11 | Texas Instruments Incorporated | Hermetic plastic molded MEMS device package and method of fabrication |
US8889456B2 (en) | 2012-08-29 | 2014-11-18 | International Business Machines Corporation | Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells |
US10160638B2 (en) | 2013-01-04 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a semiconductor structure |
DE102017210459A1 (de) | 2017-06-22 | 2018-12-27 | Robert Bosch Gmbh | Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne |
WO2023186704A1 (en) * | 2022-04-01 | 2023-10-05 | Saes Getters S.P.A. | Substrate comprising a base and an integrated getter film for manufacturing microelectronic devices |
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- 2002-07-16 CN CNB028120701A patent/CN100355045C/zh not_active Expired - Lifetime
- 2002-07-16 DE DE60203394T patent/DE60203394T2/de not_active Expired - Lifetime
- 2002-07-16 AU AU2002334385A patent/AU2002334385A1/en not_active Abandoned
- 2002-07-16 KR KR1020037016721A patent/KR100554492B1/ko active IP Right Grant
- 2002-07-16 ES ES02787170T patent/ES2238062T3/es not_active Expired - Lifetime
- 2002-07-16 WO PCT/IT2002/000465 patent/WO2003009317A2/en active IP Right Grant
- 2002-07-16 EP EP02787170A patent/EP1410433B1/en not_active Expired - Lifetime
- 2002-07-16 AT AT02787170T patent/ATE291777T1/de active
- 2002-07-16 CA CA002447282A patent/CA2447282C/en not_active Expired - Lifetime
- 2002-07-16 JP JP2003514571A patent/JP4831931B2/ja not_active Expired - Lifetime
- 2002-07-16 DK DK02787170T patent/DK1410433T3/da active
- 2002-07-18 MY MYPI20022727A patent/MY128708A/en unknown
- 2002-07-19 US US10/211,426 patent/US7180163B2/en not_active Expired - Lifetime
-
2005
- 2005-09-22 HK HK05108307A patent/HK1076539A1/xx not_active IP Right Cessation
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2007
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Also Published As
Publication number | Publication date |
---|---|
US8193623B2 (en) | 2012-06-05 |
DK1410433T3 (da) | 2005-06-27 |
ATE291777T1 (de) | 2005-04-15 |
AU2002334385A1 (en) | 2003-03-03 |
HK1076539A1 (en) | 2006-01-20 |
KR20040018282A (ko) | 2004-03-02 |
TW583049B (en) | 2004-04-11 |
CN100355045C (zh) | 2007-12-12 |
US20070210431A1 (en) | 2007-09-13 |
CA2447282A1 (en) | 2003-01-30 |
DE60203394T2 (de) | 2006-03-23 |
EP1410433A2 (en) | 2004-04-21 |
CA2447282C (en) | 2008-05-06 |
ES2238062T3 (es) | 2005-08-16 |
DE60203394D1 (de) | 2005-04-28 |
MY128708A (en) | 2007-02-28 |
WO2003009317A3 (en) | 2003-09-25 |
US20040048449A1 (en) | 2004-03-11 |
WO2003009317A2 (en) | 2003-01-30 |
JP2005513758A (ja) | 2005-05-12 |
CN1620722A (zh) | 2005-05-25 |
US20080038861A1 (en) | 2008-02-14 |
US8105860B2 (en) | 2012-01-31 |
EP1410433B1 (en) | 2005-03-23 |
KR100554492B1 (ko) | 2006-03-03 |
US7180163B2 (en) | 2007-02-20 |
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