JP4831931B2 - マイクロエレクトロニクス、マイクロオプトエレクトロニクスまたはマイクロメカニクスのデバイスを製造するための気体吸収物質の集積堆積物を有する支持体 - Google Patents

マイクロエレクトロニクス、マイクロオプトエレクトロニクスまたはマイクロメカニクスのデバイスを製造するための気体吸収物質の集積堆積物を有する支持体 Download PDF

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Publication number
JP4831931B2
JP4831931B2 JP2003514571A JP2003514571A JP4831931B2 JP 4831931 B2 JP4831931 B2 JP 4831931B2 JP 2003514571 A JP2003514571 A JP 2003514571A JP 2003514571 A JP2003514571 A JP 2003514571A JP 4831931 B2 JP4831931 B2 JP 4831931B2
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Prior art keywords
support
gas
absorbing material
layer
substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2003514571A
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English (en)
Japanese (ja)
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JP2005513758A (ja
JP2005513758A5 (https=
Inventor
アミオッティ，マルコ
Original Assignee
サエス ゲッターズ ソチエタ ペル アツィオニ
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Filing date
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Priority claimed from IT2001MI001557A external-priority patent/ITMI20011557A1/it
Priority claimed from IT2002MI000689A external-priority patent/ITMI20020689A1/it
Application filed by サエス ゲッターズ ソチエタ ペル アツィオニ filed Critical サエス ゲッターズ ソチエタ ペル アツィオニ
Publication of JP2005513758A publication Critical patent/JP2005513758A/ja
Publication of JP2005513758A5 publication Critical patent/JP2005513758A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7438—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Micromachines (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
JP2003514571A 2001-07-20 2002-07-16 マイクロエレクトロニクス、マイクロオプトエレクトロニクスまたはマイクロメカニクスのデバイスを製造するための気体吸収物質の集積堆積物を有する支持体 Expired - Lifetime JP4831931B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IT2001MI001557A ITMI20011557A1 (it) 2001-07-20 2001-07-20 Supporto per la produzione di dispositivi microelettronici microoptoelettronici o micromeccanici con deposito integrato di materiale getter
ITMI2001A001557 2001-07-20
ITMI2002A000689 2002-04-03
IT2002MI000689A ITMI20020689A1 (it) 2002-04-03 2002-04-03 Supporto per la produzione di dispositivi microeletronici microoptoelettronici o micromeccanici con deposito integrato di materiale assorbit
PCT/IT2002/000465 WO2003009317A2 (en) 2001-07-20 2002-07-16 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices

Publications (3)

Publication Number Publication Date
JP2005513758A JP2005513758A (ja) 2005-05-12
JP2005513758A5 JP2005513758A5 (https=) 2006-01-05
JP4831931B2 true JP4831931B2 (ja) 2011-12-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003514571A Expired - Lifetime JP4831931B2 (ja) 2001-07-20 2002-07-16 マイクロエレクトロニクス、マイクロオプトエレクトロニクスまたはマイクロメカニクスのデバイスを製造するための気体吸収物質の集積堆積物を有する支持体

Country Status (14)

Country Link
US (3) US7180163B2 (https=)
EP (1) EP1410433B1 (https=)
JP (1) JP4831931B2 (https=)
KR (1) KR100554492B1 (https=)
CN (1) CN100355045C (https=)
AT (1) ATE291777T1 (https=)
AU (1) AU2002334385A1 (https=)
CA (1) CA2447282C (https=)
DE (1) DE60203394T2 (https=)
DK (1) DK1410433T3 (https=)
ES (1) ES2238062T3 (https=)
MY (1) MY128708A (https=)
TW (1) TW583049B (https=)
WO (1) WO2003009317A2 (https=)

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TW533188B (en) * 2001-07-20 2003-05-21 Getters Spa Support for microelectronic, microoptoelectronic or micromechanical devices
TW583049B (en) * 2001-07-20 2004-04-11 Getters Spa Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
US6867543B2 (en) * 2003-03-31 2005-03-15 Motorola, Inc. Microdevice assembly having a fine grain getter layer for maintaining vacuum
US7164520B2 (en) 2004-05-12 2007-01-16 Idc, Llc Packaging for an interferometric modulator
US7184202B2 (en) * 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
US7710629B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. System and method for display device with reinforcing substance
US7551246B2 (en) 2004-09-27 2009-06-23 Idc, Llc. System and method for display device with integrated desiccant
US20060076632A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method for display device with activated desiccant
WO2007136706A1 (en) 2006-05-17 2007-11-29 Qualcomm Mems Technologies Inc. Desiccant in a mems device
US7816164B2 (en) 2006-12-01 2010-10-19 Qualcomm Mems Technologies, Inc. MEMS processing
US8093698B2 (en) * 2006-12-05 2012-01-10 Spansion Llc Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device
JP2009522104A (ja) 2006-12-15 2009-06-11 ビ−エイイ− システムズ パブリック リミテッド カンパニ− 薄膜ゲッタ装置に関する改善
EP2116508A3 (en) 2007-09-28 2010-10-13 QUALCOMM MEMS Technologies, Inc. Optimization of desiccant usage in a MEMS package
ITMI20090410A1 (it) 2009-03-18 2010-09-19 Getters Spa Leghe getter non evaporabili adatte particolarmente per l'assorbimento di idrogeno
FR2967150A1 (fr) * 2010-11-09 2012-05-11 Commissariat Energie Atomique Procédé de réalisation de substrat a couches enfouies de matériau getter
US8628996B2 (en) 2011-06-15 2014-01-14 International Business Machines Corporation Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells
US20130049143A1 (en) * 2011-08-26 2013-02-28 Qualcomm Mems Technologies, Inc. Release activated thin film getter
US9102511B2 (en) 2012-06-08 2015-08-11 Texas Instruments Incorporated Hermetic plastic molded MEMS device package and method of fabrication
US8889456B2 (en) 2012-08-29 2014-11-18 International Business Machines Corporation Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells
US10160638B2 (en) 2013-01-04 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a semiconductor structure
DE102017210459A1 (de) 2017-06-22 2018-12-27 Robert Bosch Gmbh Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne
WO2023186704A1 (en) * 2022-04-01 2023-10-05 Saes Getters S.P.A. Substrate comprising a base and an integrated getter film for manufacturing microelectronic devices

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JPS63198320A (ja) * 1987-02-13 1988-08-17 Mitsubishi Electric Corp 結晶成長方法
JPH08236660A (ja) * 1994-12-27 1996-09-13 Corning Inc 気密シ−ルされた電子パッケ−ジ
JPH09185947A (ja) * 1995-10-31 1997-07-15 Fuji Electric Co Ltd 電界型真空管とそれを用いた圧力センサ、加速度センサおよびそれらの製造方法
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WO2000061832A1 (en) * 1999-04-12 2000-10-19 Saes Getters S.P.A. Method and getter devices for use in deposition of thin layers

Also Published As

Publication number Publication date
MY128708A (en) 2007-02-28
AU2002334385A1 (en) 2003-03-03
CA2447282A1 (en) 2003-01-30
ES2238062T3 (es) 2005-08-16
EP1410433A2 (en) 2004-04-21
US7180163B2 (en) 2007-02-20
JP2005513758A (ja) 2005-05-12
WO2003009317A2 (en) 2003-01-30
CA2447282C (en) 2008-05-06
HK1076539A1 (en) 2006-01-20
US20080038861A1 (en) 2008-02-14
ATE291777T1 (de) 2005-04-15
US20070210431A1 (en) 2007-09-13
DE60203394T2 (de) 2006-03-23
KR20040018282A (ko) 2004-03-02
DK1410433T3 (da) 2005-06-27
CN1620722A (zh) 2005-05-25
DE60203394D1 (de) 2005-04-28
CN100355045C (zh) 2007-12-12
WO2003009317A3 (en) 2003-09-25
US20040048449A1 (en) 2004-03-11
US8105860B2 (en) 2012-01-31
KR100554492B1 (ko) 2006-03-03
EP1410433B1 (en) 2005-03-23
US8193623B2 (en) 2012-06-05
TW583049B (en) 2004-04-11

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