AU2001288616A1 - Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnection structures - Google Patents

Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnection structures

Info

Publication number
AU2001288616A1
AU2001288616A1 AU2001288616A AU8861601A AU2001288616A1 AU 2001288616 A1 AU2001288616 A1 AU 2001288616A1 AU 2001288616 A AU2001288616 A AU 2001288616A AU 8861601 A AU8861601 A AU 8861601A AU 2001288616 A1 AU2001288616 A1 AU 2001288616A1
Authority
AU
Australia
Prior art keywords
fabrication
semiconductor devices
air gaps
ultra low
low capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288616A
Other languages
English (en)
Inventor
Sue Ann Bidstrup Allen
Dhananjay M. Bhusari
Clifford Lee Henderson
Paul Albert Kohl
Hollie Anne Reed
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Georgia Tech Research Corp
Original Assignee
Georgia Tech Research Institute
Georgia Tech Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Georgia Tech Research Institute, Georgia Tech Research Corp filed Critical Georgia Tech Research Institute
Publication of AU2001288616A1 publication Critical patent/AU2001288616A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
AU2001288616A 2000-08-31 2001-08-31 Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnection structures Abandoned AU2001288616A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US22958900P 2000-08-31 2000-08-31
US22966000P 2000-08-31 2000-08-31
US22965800P 2000-08-31 2000-08-31
US60/229,658 2000-08-31
US60/229,589 2000-08-31
US60/229,660 2000-08-31
PCT/US2001/027224 WO2002019420A2 (fr) 2000-08-31 2001-08-31 Fabrication de dispositifs semiconducteurs a entrefers pour interconnexions a tres faible capacite et procedes correspondants

Publications (1)

Publication Number Publication Date
AU2001288616A1 true AU2001288616A1 (en) 2002-03-13

Family

ID=27397975

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288616A Abandoned AU2001288616A1 (en) 2000-08-31 2001-08-31 Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnection structures

Country Status (7)

Country Link
US (2) US6610593B2 (fr)
EP (1) EP1352421B1 (fr)
AU (1) AU2001288616A1 (fr)
DE (1) DE60140624D1 (fr)
MY (1) MY128644A (fr)
TW (1) TWI226103B (fr)
WO (1) WO2002019420A2 (fr)

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Also Published As

Publication number Publication date
DE60140624D1 (de) 2010-01-07
TWI226103B (en) 2005-01-01
US20020081787A1 (en) 2002-06-27
US6888249B2 (en) 2005-05-03
MY128644A (en) 2007-02-28
US20040038513A1 (en) 2004-02-26
EP1352421A2 (fr) 2003-10-15
EP1352421B1 (fr) 2009-11-25
US6610593B2 (en) 2003-08-26
WO2002019420A3 (fr) 2003-05-15
WO2002019420A2 (fr) 2002-03-07

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