EP1493183B1 - Procede de fabrication d'entrefer contenant des dispositifs a semiconducteur et dispositif a semiconducteur resultant - Google Patents

Procede de fabrication d'entrefer contenant des dispositifs a semiconducteur et dispositif a semiconducteur resultant Download PDF

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EP1493183B1
EP1493183B1 EP03728320A EP03728320A EP1493183B1 EP 1493183 B1 EP1493183 B1 EP 1493183B1 EP 03728320 A EP03728320 A EP 03728320A EP 03728320 A EP03728320 A EP 03728320A EP 1493183 B1 EP1493183 B1 EP 1493183B1
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alkyl
sacrificial
alkenyl
aryl
alkynyl
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EP1493183A2 (fr
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Paul H. Townsend, Iii
Kenneth L. Foster
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Dow Global Technologies LLC
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Claims (12)

  1. Une méthode de formation d'au moins un entrefer partiel à l'intérieur d'un dispositif semi-conducteur comprenant les étapes consistant : (a) à déposer une composition polymère sacrificielle dans une ou plusieurs couches du dispositif pendant sa formation ; (b) à revêtir le dispositif d'une ou plusieurs couches d'un matériau diélectrique isolant, polymère, organique,
    relativement non poreux (masque dur) ayant une masse volumique inférieure à 2,2 g/cm3 ; et (c) à décomposer la composition polymère sacrificielle de telle sorte que les produits de décomposition s'infiltrent au moins partiellement dans ces une ou plusieurs couches de masque dur,
    formant de cette façon au moins un entrefer partiel à l'intérieur du dispositif, caractérisée en ce que le polymère sacrificiel est un copolymère d'un premier monomère sélectionné parmi les acrylates, les vinylaromatiques,
    les norbornènes, et les diacrylates d'alkyldiol avec un second monomère sélectionné parmi les vinylbenzocyclobutènes et le 1,3 bis 2[4-benzocyclobutényl (éthényl)] benzène.
  2. Une méthode de la revendication 1, dans laquelle le polymère sacrificiel est un copolymère de 5-éthylidène-2-norbornène et de vinylbenzocyclobutène ou d'un dérivé du vinylbenzocyclobutène.
  3. Une méthode de la revendication 1, dans laquelle le polymère sacrificiel est un copolymère de styrène ou d'un dérivé du styrène et de vinylbenzocyclobutène ou d'un dérivé du vinylbenzocyclobutène.
  4. Une méthode de la revendication 1, dans laquelle le polymère sacrificiel est un copolymère de diacrylate de bis [3-(4-benzocyclobutényl)]1,n (n = 2 à 12) alkyldiol et de 1,3 bis 2[4-benzocyclobutényl (éthényl)] benzène.
  5. Une méthode de la revendication 1, dans laquelle le polymère sacrificiel est un copolymère comprenant de 99 à 40 pour cent en moles de styrène ou d'un dérivé du styrène et de 1 à 60 pour cent en moles de vinylbenzocyclobutène ou d'un dérivé du vinylbenzocyclobutène sur la base des moles totales de monomères incorporés dans le polymère.
  6. Une méthode de la revendication 1, dans laquelle le polymère sacrificiel est un copolymère d'α-méthylstyrène et de vinylbenzocyclobutène.
  7. Une méthode de n'importe laquelle des revendications précédentes dans laquelle le masque dur est le produit durci formé à partir des produits de réaction hydrolysés ou partiellement hydrolysés d'alcoxysilanes substitués ou d'acyloxysilanes substitués.
  8. Une méthode de la revendication 7 dans laquelle le masque dur comprend le produit de réaction hydrolysé d'un alcoxy ou acyloxy silane substitué de la formule :
    Figure imgb0013
     dans laquelle R est un alkylidène en C1 à C6, un alkylène en C1 à C6, un arylène, ou une liaison directe ; Y est un alkyle en Ci à C6, un alcényle en C2 à C6, un alcynyle en C2 à C6, un aryle en C6 à C20, un 3-méthacryloxy, un 3-acryloxy, un 3-aminoéthyl-amino, un 3-amino, -SiZ2OR', ou -OR' ; R' est indépendamment, dans chaque cas, un alkyle en C1 à C6 ou un acyle en C2 à C6 ; et Z est un alkyle en C1 à C6, un alcényle en C2 à C6, un alcynyle en C2 à C6, un aryle en C6 à C20, ou -OR'.
  9. Une méthode de la revendication 8 dans laquelle le masque dur comprend le produit hydrolysé ou partiellement hydrolysé d'un mélange comprenant
    (a) de 50 à 95 pour cent en moles (des moles totales de silanes (a), (b) et (c) dans la composition de masque dur) de silanes de la formule :
    Figure imgb0014
     dans laquelle Ra est un alkylidène en C1 à C6, un alkylène en C1 à C6, un arylène, ou une liaison directe ; Ya est un alkyle en C1 à C6, un alcényle en C2 à C6, un alcynyle en C2 à C6, un aryle en C6 à C20, un 3-méthacryloxy, un 3-acryloxy, un 3-aminoéthyl-amino, un 3-amino, -SiZa2ORa', ou -ORa' ; Ra' est indépendamment, dans chaque cas, un alkyle en C1 à C6 ou un acyle en C2 à C6 ; et Za est un alkyle en C1 à C6, un alcényle en C2 à C6, un alcynyle en C2 à C6, un aryle en C6 à C20, ou -ORa', à condition qu'au moins soit Za, soit la combinaison Ra-Ya comprenne une insaturation de liaison carbone - carbone non aromatique,
    (b) de 5 à 40 pour cent en moles de silanes (des moles totales de silanes (a), (b) et (c) dans la composition de masque dur) de la formule :
    Figure imgb0015
     dans laquelle Rb est un alkylidène en C1 à C6, un alkylène en C1 à C6, un arylène, ou une liaison directe ; Yb est un alkyle en C1 à C6, un alcényle en C2 à C6, un alcynyle en C2 à C6, un aryle en C6 à C20, un 3-méthacryloxy, un 3-acryloxy, un 3-aminoéthyl-amino, un 3-amino, -SiZb2ORb', ou -ORb' ; Rb' est indépendamment, dans chaque cas, un alkyle en C1 à C6 ou un acyle en C2 à C6 ; et Zb est un alkyle en C1 à C6, un alcényle en C2 à C6, un alcynyle en C2 à C6, un aryle en C6 à C20, ou -ORb', à condition qu'au moins soit Zb, soit la combinaison de Rb-Yb comprenne un cycle aromatique, et
    (c) de 0 à 45 pour cent en moles (des moles totales de silanes (a), (b) et (c) dans la composition de masque dur) de silanes de la formule :
    Figure imgb0016
     dans laquelle Rc est un alkylidène en C1 à C6, un alkylène en C1 à C6, un arylène, ou une liaison directe ; Yc est un alkyle en C1 à C6, un alcényle en C2 à C6, un alcynyle en C2 à C6, un aryle en C6 à C20, un 3-méthacryloxy, un 3-acryloxy, un 3-aminoéthyl-amino, un 3-amino, -SiZc2ORc ou -ORc' ; Rc' est indépendamment, dans chaque cas, un alkyle en C1 à C6 ou un acyle en C2 à C6 ; et Zc est un alkyle en C1 à C6, un alcényle en C2 à C6, un alcynyle en C2 à C6, un aryle en C6 à C20, ou -ORc', à condition qu'au moins soit Zc, soit la combinaison de Rc-Yc comprenne un alcényle.
  10. Une méthode de n'importe laquelle des revendications précédentes dans laquelle le matériau diélectrique comprend une résine polyarylène.
  11. Une méthode de n'importe lesquelles des revendications précédentes dans laquelle le matériau diélectrique comprend une substance formant des pores qui est activée ou éliminée, soit simultanément avec, soit avant la décomposition du matériau sacrificiel, introduisant de cette façon des pores ou des vides dans la couche.
  12. Une méthode de la revendication 11 dans laquelle la substance formant des pores est un copolymère polymérisé en émulsion réticulé.
EP03728320A 2002-04-02 2003-04-01 Procede de fabrication d'entrefer contenant des dispositifs a semiconducteur et dispositif a semiconducteur resultant Expired - Lifetime EP1493183B1 (fr)

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JP2005522049A (ja) 2005-07-21
WO2003085719A2 (fr) 2003-10-16
US20050124172A1 (en) 2005-06-09
AU2003233470A8 (en) 2003-10-20
US6946382B2 (en) 2005-09-20
AU2003233470A1 (en) 2003-10-20
JP4531400B2 (ja) 2010-08-25
EP1493183A2 (fr) 2005-01-05

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