AU2001287142A1 - Electro-optic structure and process for fabricating same - Google Patents

Electro-optic structure and process for fabricating same

Info

Publication number
AU2001287142A1
AU2001287142A1 AU2001287142A AU8714201A AU2001287142A1 AU 2001287142 A1 AU2001287142 A1 AU 2001287142A1 AU 2001287142 A AU2001287142 A AU 2001287142A AU 8714201 A AU8714201 A AU 8714201A AU 2001287142 A1 AU2001287142 A1 AU 2001287142A1
Authority
AU
Australia
Prior art keywords
oxide
buffer layer
layer
accommodating buffer
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001287142A
Other languages
English (en)
Inventor
Ravindranath Droopad
Lyndee Hilt
William Jay Ooms
Jamal Ramdani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001287142A1 publication Critical patent/AU2001287142A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0338—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect structurally associated with a photoconductive layer or having photo-refractive properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Glass Compositions (AREA)
  • Electric Cable Installation (AREA)
AU2001287142A 2000-09-26 2001-09-07 Electro-optic structure and process for fabricating same Abandoned AU2001287142A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/669,602 2000-09-26
US09/669,602 US6493497B1 (en) 2000-09-26 2000-09-26 Electro-optic structure and process for fabricating same
PCT/US2001/028096 WO2002027362A2 (en) 2000-09-26 2001-09-07 Electro-optic structure and process for fabricating same

Publications (1)

Publication Number Publication Date
AU2001287142A1 true AU2001287142A1 (en) 2002-04-08

Family

ID=24686965

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001287142A Abandoned AU2001287142A1 (en) 2000-09-26 2001-09-07 Electro-optic structure and process for fabricating same

Country Status (10)

Country Link
US (1) US6493497B1 (ko)
EP (1) EP1354227B9 (ko)
JP (1) JP2004527778A (ko)
KR (1) KR100809860B1 (ko)
CN (1) CN1239930C (ko)
AT (1) ATE314669T1 (ko)
AU (1) AU2001287142A1 (ko)
DE (1) DE60116381T2 (ko)
TW (1) TW557584B (ko)
WO (1) WO2002027362A2 (ko)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6807352B2 (en) * 2001-02-11 2004-10-19 Georgia Tech Research Corporation Optical waveguides with embedded air-gap cladding layer and methods of fabrication thereof
US6785458B2 (en) * 2001-02-11 2004-08-31 Georgia Tech Research Corporation Guided-wave optical interconnections embedded within a microelectronic wafer-level batch package
JP4103421B2 (ja) * 2001-03-28 2008-06-18 セイコーエプソン株式会社 電子デバイス及び電子機器
GB2385427A (en) * 2002-02-06 2003-08-20 Sdl Integrated Optics Ltd Optical devices
US6999670B1 (en) * 2002-08-27 2006-02-14 Luxtera, Inc. Active waveguides for optoelectronic devices
US7388259B2 (en) * 2002-11-25 2008-06-17 International Business Machines Corporation Strained finFET CMOS device structures
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6845198B2 (en) * 2003-03-25 2005-01-18 Sioptical, Inc. High-speed silicon-based electro-optic modulator
WO2004095084A2 (en) * 2003-04-23 2004-11-04 Siophcal, Inc. Sub-micron planar lightwave devices formed on an soi optical platform
US6887798B2 (en) * 2003-05-30 2005-05-03 International Business Machines Corporation STI stress modification by nitrogen plasma treatment for improving performance in small width devices
US7329923B2 (en) * 2003-06-17 2008-02-12 International Business Machines Corporation High-performance CMOS devices on hybrid crystal oriented substrates
US7279746B2 (en) * 2003-06-30 2007-10-09 International Business Machines Corporation High performance CMOS device structures and method of manufacture
US6993212B2 (en) * 2003-09-08 2006-01-31 Intel Corporation Optical waveguide devices having adjustable waveguide cladding
US7410846B2 (en) 2003-09-09 2008-08-12 International Business Machines Corporation Method for reduced N+ diffusion in strained Si on SiGe substrate
US6890808B2 (en) * 2003-09-10 2005-05-10 International Business Machines Corporation Method and structure for improved MOSFETs using poly/silicide gate height control
US6887751B2 (en) * 2003-09-12 2005-05-03 International Business Machines Corporation MOSFET performance improvement using deformation in SOI structure
US7170126B2 (en) * 2003-09-16 2007-01-30 International Business Machines Corporation Structure of vertical strained silicon devices
US6869866B1 (en) 2003-09-22 2005-03-22 International Business Machines Corporation Silicide proximity structures for CMOS device performance improvements
US7144767B2 (en) * 2003-09-23 2006-12-05 International Business Machines Corporation NFETs using gate induced stress modulation
US6872641B1 (en) 2003-09-23 2005-03-29 International Business Machines Corporation Strained silicon on relaxed sige film with uniform misfit dislocation density
US7119403B2 (en) 2003-10-16 2006-10-10 International Business Machines Corporation High performance strained CMOS devices
US7037770B2 (en) 2003-10-20 2006-05-02 International Business Machines Corporation Method of manufacturing strained dislocation-free channels for CMOS
US7303949B2 (en) 2003-10-20 2007-12-04 International Business Machines Corporation High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
US7129126B2 (en) 2003-11-05 2006-10-31 International Business Machines Corporation Method and structure for forming strained Si for CMOS devices
US7015082B2 (en) * 2003-11-06 2006-03-21 International Business Machines Corporation High mobility CMOS circuits
US7029964B2 (en) * 2003-11-13 2006-04-18 International Business Machines Corporation Method of manufacturing a strained silicon on a SiGe on SOI substrate
US7122849B2 (en) * 2003-11-14 2006-10-17 International Business Machines Corporation Stressed semiconductor device structures having granular semiconductor material
US7247534B2 (en) 2003-11-19 2007-07-24 International Business Machines Corporation Silicon device on Si:C-OI and SGOI and method of manufacture
US7198995B2 (en) 2003-12-12 2007-04-03 International Business Machines Corporation Strained finFETs and method of manufacture
US7247912B2 (en) 2004-01-05 2007-07-24 International Business Machines Corporation Structures and methods for making strained MOSFETs
US7118999B2 (en) 2004-01-16 2006-10-10 International Business Machines Corporation Method and apparatus to increase strain effect in a transistor channel
US7202132B2 (en) 2004-01-16 2007-04-10 International Business Machines Corporation Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs
US7381609B2 (en) 2004-01-16 2008-06-03 International Business Machines Corporation Method and structure for controlling stress in a transistor channel
US7923782B2 (en) * 2004-02-27 2011-04-12 International Business Machines Corporation Hybrid SOI/bulk semiconductor transistors
US7205206B2 (en) * 2004-03-03 2007-04-17 International Business Machines Corporation Method of fabricating mobility enhanced CMOS devices
US7504693B2 (en) 2004-04-23 2009-03-17 International Business Machines Corporation Dislocation free stressed channels in bulk silicon and SOI CMOS devices by gate stress engineering
GB2430306B (en) * 2004-05-28 2009-10-21 Advanced Micro Devices Inc Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
DE102004026145A1 (de) * 2004-05-28 2006-05-11 Advanced Micro Devices, Inc., Sunnyvale Halbleiterstruktur mit einem spannungsempfindlichen Element und Verfahren zum Messen einer elastischen Spannung in einer Halbleiterstruktur
US7223994B2 (en) 2004-06-03 2007-05-29 International Business Machines Corporation Strained Si on multiple materials for bulk or SOI substrates
US7037794B2 (en) * 2004-06-09 2006-05-02 International Business Machines Corporation Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain
TWI463526B (zh) * 2004-06-24 2014-12-01 Ibm 改良具應力矽之ｃｍｏｓ元件的方法及以該方法製備而成的元件
US7227205B2 (en) * 2004-06-24 2007-06-05 International Business Machines Corporation Strained-silicon CMOS device and method
US7288443B2 (en) 2004-06-29 2007-10-30 International Business Machines Corporation Structures and methods for manufacturing p-type MOSFET with graded embedded silicon-germanium source-drain and/or extension
US7217949B2 (en) * 2004-07-01 2007-05-15 International Business Machines Corporation Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
US6991998B2 (en) * 2004-07-02 2006-01-31 International Business Machines Corporation Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer
US7384829B2 (en) 2004-07-23 2008-06-10 International Business Machines Corporation Patterned strained semiconductor substrate and device
WO2006028477A1 (en) * 2004-09-07 2006-03-16 Massachusetts Institute For Technology Fabrication of electro-optical structures
US7193254B2 (en) * 2004-11-30 2007-03-20 International Business Machines Corporation Structure and method of applying stresses to PFET and NFET transistor channels for improved performance
US7238565B2 (en) 2004-12-08 2007-07-03 International Business Machines Corporation Methodology for recovery of hot carrier induced degradation in bipolar devices
US7262087B2 (en) * 2004-12-14 2007-08-28 International Business Machines Corporation Dual stressed SOI substrates
US7173312B2 (en) * 2004-12-15 2007-02-06 International Business Machines Corporation Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification
US7274084B2 (en) * 2005-01-12 2007-09-25 International Business Machines Corporation Enhanced PFET using shear stress
US7432553B2 (en) * 2005-01-19 2008-10-07 International Business Machines Corporation Structure and method to optimize strain in CMOSFETs
US7220626B2 (en) * 2005-01-28 2007-05-22 International Business Machines Corporation Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levels
US7256081B2 (en) * 2005-02-01 2007-08-14 International Business Machines Corporation Structure and method to induce strain in a semiconductor device channel with stressed film under the gate
US7224033B2 (en) * 2005-02-15 2007-05-29 International Business Machines Corporation Structure and method for manufacturing strained FINFET
US7545004B2 (en) 2005-04-12 2009-06-09 International Business Machines Corporation Method and structure for forming strained devices
US7544577B2 (en) * 2005-08-26 2009-06-09 International Business Machines Corporation Mobility enhancement in SiGe heterojunction bipolar transistors
US7202513B1 (en) * 2005-09-29 2007-04-10 International Business Machines Corporation Stress engineering using dual pad nitride with selective SOI device architecture
US20070096170A1 (en) * 2005-11-02 2007-05-03 International Business Machines Corporation Low modulus spacers for channel stress enhancement
US20070099360A1 (en) * 2005-11-03 2007-05-03 International Business Machines Corporation Integrated circuits having strained channel field effect transistors and methods of making
US7655511B2 (en) * 2005-11-03 2010-02-02 International Business Machines Corporation Gate electrode stress control for finFET performance enhancement
US7785950B2 (en) * 2005-11-10 2010-08-31 International Business Machines Corporation Dual stress memory technique method and related structure
US7709317B2 (en) * 2005-11-14 2010-05-04 International Business Machines Corporation Method to increase strain enhancement with spacerless FET and dual liner process
US7348638B2 (en) * 2005-11-14 2008-03-25 International Business Machines Corporation Rotational shear stress for charge carrier mobility modification
US7564081B2 (en) * 2005-11-30 2009-07-21 International Business Machines Corporation finFET structure with multiply stressed gate electrode
US7776695B2 (en) * 2006-01-09 2010-08-17 International Business Machines Corporation Semiconductor device structure having low and high performance devices of same conductive type on same substrate
US7863197B2 (en) 2006-01-09 2011-01-04 International Business Machines Corporation Method of forming a cross-section hourglass shaped channel region for charge carrier mobility modification
US7635620B2 (en) * 2006-01-10 2009-12-22 International Business Machines Corporation Semiconductor device structure having enhanced performance FET device
US20070158743A1 (en) * 2006-01-11 2007-07-12 International Business Machines Corporation Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film liners
US7691698B2 (en) 2006-02-21 2010-04-06 International Business Machines Corporation Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain
US8461009B2 (en) * 2006-02-28 2013-06-11 International Business Machines Corporation Spacer and process to enhance the strain in the channel with stress liner
US7608489B2 (en) 2006-04-28 2009-10-27 International Business Machines Corporation High performance stress-enhance MOSFET and method of manufacture
US7521307B2 (en) * 2006-04-28 2009-04-21 International Business Machines Corporation CMOS structures and methods using self-aligned dual stressed layers
US7615418B2 (en) 2006-04-28 2009-11-10 International Business Machines Corporation High performance stress-enhance MOSFET and method of manufacture
US8853746B2 (en) * 2006-06-29 2014-10-07 International Business Machines Corporation CMOS devices with stressed channel regions, and methods for fabricating the same
US7790540B2 (en) 2006-08-25 2010-09-07 International Business Machines Corporation Structure and method to use low k stress liner to reduce parasitic capacitance
US7462522B2 (en) 2006-08-30 2008-12-09 International Business Machines Corporation Method and structure for improving device performance variation in dual stress liner technology
US8754446B2 (en) 2006-08-30 2014-06-17 International Business Machines Corporation Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier material
US20080248598A1 (en) * 2007-04-09 2008-10-09 Rohit Pal Method and apparatus for determining characteristics of a stressed material using scatterometry
US8115254B2 (en) 2007-09-25 2012-02-14 International Business Machines Corporation Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same
US8492846B2 (en) 2007-11-15 2013-07-23 International Business Machines Corporation Stress-generating shallow trench isolation structure having dual composition
US9070818B2 (en) * 2009-07-17 2015-06-30 Soitec Methods and structures for bonding elements
US8598006B2 (en) 2010-03-16 2013-12-03 International Business Machines Corporation Strain preserving ion implantation methods
US9217830B2 (en) 2010-05-14 2015-12-22 Cornell University Electro-optic modulator structures, related methods and applications
US10718901B2 (en) 2013-06-26 2020-07-21 Micron Technology, Inc. Photonic device having a photonic crystal lower cladding layer provided on a semiconductor substrate
US9595805B2 (en) 2014-09-22 2017-03-14 International Business Machines Corporation III-V photonic integrated circuits on silicon substrate
US9395489B2 (en) 2014-10-08 2016-07-19 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material
US9344200B2 (en) 2014-10-08 2016-05-17 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth
CN115151849A (zh) 2020-01-29 2022-10-04 普赛昆腾公司 低损耗高效率光子移相器
CN115427855A (zh) 2020-03-03 2022-12-02 普赛昆腾公司 光子设备的制造方法

Family Cites Families (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3670213A (en) 1969-05-24 1972-06-13 Tokyo Shibaura Electric Co Semiconductor photosensitive device with a rare earth oxide compound forming a rectifying junction
US4242595A (en) 1978-07-27 1980-12-30 University Of Southern California Tunnel diode load for ultra-fast low power switching circuits
US4424589A (en) 1980-04-11 1984-01-03 Coulter Systems Corporation Flat bed scanner system and method
US4289920A (en) 1980-06-23 1981-09-15 International Business Machines Corporation Multiple bandgap solar cell on transparent substrate
DE3168688D1 (en) 1980-11-06 1985-03-14 Toshiba Kk Method for manufacturing a semiconductor device
US4482422A (en) 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4773063A (en) 1984-11-13 1988-09-20 University Of Delaware Optical wavelength division multiplexing/demultiplexing system
US4748485A (en) 1985-03-21 1988-05-31 Hughes Aircraft Company Opposed dual-gate hybrid structure for three-dimensional integrated circuits
JPS6263828A (ja) 1985-09-06 1987-03-20 Yokogawa Electric Corp 振動式トランスジューサ
US4901133A (en) 1986-04-02 1990-02-13 Texas Instruments Incorporated Multilayer semi-insulating film for hermetic wafer passivation and method for making same
JPS62245205A (ja) * 1986-04-17 1987-10-26 Nec Corp 薄膜光導波路およびその作製方法
US5511238A (en) 1987-06-26 1996-04-23 Texas Instruments Incorporated Monolithic microwave transmitter/receiver
JPH0766922B2 (ja) 1987-07-29 1995-07-19 株式会社村田製作所 半導体装置の製造方法
JPH0695554B2 (ja) 1987-10-12 1994-11-24 工業技術院長 単結晶マグネシアスピネル膜の形成方法
US5073981A (en) 1988-01-22 1991-12-17 At&T Bell Laboratories Optical communication by injection-locking to a signal which modulates an optical carrier
US5227196A (en) 1989-02-16 1993-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of forming a carbon film on a substrate made of an oxide material
US4999842A (en) 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
US4990974A (en) 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
US5143854A (en) 1989-06-07 1992-09-01 Affymax Technologies N.V. Large scale photolithographic solid phase synthesis of polypeptides and receptor binding screening thereof
US5067809A (en) 1989-06-09 1991-11-26 Oki Electric Industry Co., Ltd. Opto-semiconductor device and method of fabrication of the same
US5504035A (en) 1989-08-28 1996-04-02 Lsi Logic Corporation Process for solder ball interconnecting a semiconductor device to a substrate using a noble metal foil embedded interposer substrate
US5055445A (en) 1989-09-25 1991-10-08 Litton Systems, Inc. Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy
US5051790A (en) 1989-12-22 1991-09-24 David Sarnoff Research Center, Inc. Optoelectronic interconnections for integrated circuits
JPH088214B2 (ja) 1990-01-19 1996-01-29 三菱電機株式会社 半導体装置
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5310707A (en) 1990-03-28 1994-05-10 Superconductivity Research Laboratory International Substrate material for the preparation of oxide superconductors
US5281834A (en) 1990-08-31 1994-01-25 Motorola, Inc. Non-silicon and silicon bonded structure and method of manufacture
US5273911A (en) 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
US5185589A (en) 1991-05-17 1993-02-09 Westinghouse Electric Corp. Microwave film bulk acoustic resonator and manifolded filter bank
US5140651A (en) 1991-06-27 1992-08-18 The United States Of America As Represented By The Secretary Of The Air Force Semiconductive guided-wave programmable optical delay lines using electrooptic fabry-perot elements
EP0530972B1 (en) 1991-08-02 1997-11-05 Canon Kabushiki Kaisha Liquid crystal image display unit
EP0536790B1 (en) 1991-10-11 2004-03-03 Canon Kabushiki Kaisha Method for producing semiconductor articles
EP0548391B1 (de) 1991-12-21 1997-07-23 Deutsche ITT Industries GmbH Offsetkompensierter Hallsensor
JP3250673B2 (ja) 1992-01-31 2002-01-28 キヤノン株式会社 半導体素子基体とその作製方法
JP3416163B2 (ja) 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
US5155658A (en) 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
US5270298A (en) 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5326721A (en) 1992-05-01 1994-07-05 Texas Instruments Incorporated Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
US5572052A (en) 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
US5296721A (en) 1992-07-31 1994-03-22 Hughes Aircraft Company Strained interband resonant tunneling negative resistance diode
EP0607435B1 (en) 1992-08-07 1999-11-03 Asahi Kasei Kogyo Kabushiki Kaisha Nitride based semiconductor device and manufacture thereof
US5356509A (en) 1992-10-16 1994-10-18 Astropower, Inc. Hetero-epitaxial growth of non-lattice matched semiconductors
JPH06151872A (ja) 1992-11-09 1994-05-31 Mitsubishi Kasei Corp Ｆｅｔ素子
EP0600303B1 (en) 1992-12-01 2002-02-06 Matsushita Electric Industrial Co., Ltd. Method for fabrication of dielectric thin film
US5248564A (en) 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
JPH06196648A (ja) * 1992-12-25 1994-07-15 Fuji Xerox Co Ltd 配向性強誘電体薄膜素子
US5352926A (en) 1993-01-04 1994-10-04 Motorola, Inc. Flip chip package and method of making
JPH06338630A (ja) 1993-05-28 1994-12-06 Omron Corp 半導体発光素子、並びに当該発光素子を用いた光学検知装置、光学的情報処理装置、光結合装置及び発光装置
US5572040A (en) 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5394489A (en) 1993-07-27 1995-02-28 At&T Corp. Wavelength division multiplexed optical communication transmitters
JP3333325B2 (ja) 1993-08-26 2002-10-15 株式会社東芝 半導体装置、半導体装置のシミュレーション方法、及び半導体装置のシミュレータ
US5792679A (en) 1993-08-30 1998-08-11 Sharp Microelectronics Technology, Inc. Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant
JPH07115244A (ja) 1993-10-19 1995-05-02 Toyota Motor Corp 半導体レーザー及びその製造方法
US5549977A (en) 1993-11-18 1996-08-27 Lucent Technologies Inc. Article comprising magnetoresistive material
US5689123A (en) 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
US5883564A (en) 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
US5828080A (en) 1994-08-17 1998-10-27 Tdk Corporation Oxide thin film, electronic device substrate and electronic device
JPH0864596A (ja) 1994-08-25 1996-03-08 Fujitsu Ltd 半導体装置及びその製造方法
US5504183A (en) 1994-09-12 1996-04-02 Motorola Organometallic fluorescent complex polymers for light emitting applications
US5635741A (en) 1994-09-30 1997-06-03 Texas Instruments Incorporated Barium strontium titanate (BST) thin films by erbium donor doping
US5473047A (en) 1994-10-11 1995-12-05 Motorola, Inc. Soluble precursor to poly (cyanoterephthalydene) and method of preparation
US5486406A (en) 1994-11-07 1996-01-23 Motorola Green-emitting organometallic complexes for use in light emitting devices
JPH08148968A (ja) 1994-11-24 1996-06-07 Mitsubishi Electric Corp 薄膜圧電素子
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
US5937274A (en) 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
US5552547A (en) 1995-02-13 1996-09-03 Shi; Song Q. Organometallic complexes with built-in fluorescent dyes for use in light emitting devices
US5610744A (en) 1995-02-16 1997-03-11 Board Of Trustees Of The University Of Illinois Optical communications and interconnection networks having opto-electronic switches and direct optical routers
US5679965A (en) 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5528067A (en) 1995-05-08 1996-06-18 Hughes Aircraft Company Magnetic field detection
US5753934A (en) 1995-08-04 1998-05-19 Tok Corporation Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
EP0765045B1 (en) 1995-09-21 2001-12-19 Alcatel Arrangement for amplifying and combining optical signals, and method for upstream transmission realised therewith
US5659180A (en) 1995-11-13 1997-08-19 Motorola Heterojunction interband tunnel diodes with improved P/V current ratios
JP3036424B2 (ja) 1996-01-12 2000-04-24 日本電気株式会社 信号再生機能を有する光中継器
FR2744578B1 (fr) 1996-02-06 1998-04-30 Motorola Semiconducteurs Amlificateur hautes frequences
US5833603A (en) 1996-03-13 1998-11-10 Lipomatrix, Inc. Implantable biosensing transponder
US5801072A (en) 1996-03-14 1998-09-01 Lsi Logic Corporation Method of packaging integrated circuits
DE19712496A1 (de) 1996-03-26 1997-10-30 Mitsubishi Materials Corp Piezoelektrische Dünnfilm-Bauelemente
TW410272B (en) 1996-05-07 2000-11-01 Thermoscan Lnc Enhanced protective lens cover
US5863326A (en) 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US6023082A (en) 1996-08-05 2000-02-08 Lockheed Martin Energy Research Corporation Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material
US5987011A (en) 1996-08-30 1999-11-16 Chai-Keong Toh Routing method for Ad-Hoc mobile networks
US5841931A (en) * 1996-11-26 1998-11-24 Massachusetts Institute Of Technology Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby
US5864543A (en) 1997-02-24 1999-01-26 At&T Wireless Services, Inc. Transmit/receive compensation in a time division duplex system
US5872493A (en) 1997-03-13 1999-02-16 Nokia Mobile Phones, Ltd. Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
ATE550461T1 (de) 1997-04-11 2012-04-15 Nichia Corp Wachstumsmethode für einen nitrid-halbleiter
US6150239A (en) 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
KR100243294B1 (ko) 1997-06-09 2000-02-01 윤종용 반도체장치의 강유전체 메모리 셀 및 어레이
US6078717A (en) 1997-07-22 2000-06-20 Fuji Xerox Co., Ltd. Opical waveguide device
US5907792A (en) 1997-08-25 1999-05-25 Motorola,Inc. Method of forming a silicon nitride layer
JP4221765B2 (ja) 1997-08-29 2009-02-12 ソニー株式会社 光集積化酸化物装置および光集積化酸化物装置の製造方法
US6002375A (en) 1997-09-02 1999-12-14 Motorola, Inc. Multi-substrate radio-frequency circuit
JP3658160B2 (ja) 1997-11-17 2005-06-08 キヤノン株式会社 モールドレス半導体装置
US6049702A (en) 1997-12-04 2000-04-11 Rockwell Science Center, Llc Integrated passive transceiver section
JP3092659B2 (ja) 1997-12-10 2000-09-25 日本電気株式会社 薄膜キャパシタ及びその製造方法
US6011646A (en) 1998-02-20 2000-01-04 The Regents Of The Unviersity Of California Method to adjust multilayer film stress induced deformation of optics
US5993544A (en) 1998-03-30 1999-11-30 Neocera, Inc. Non-linear optical thin film layer system
CA2268997C (en) 1998-05-05 2005-03-22 National Research Council Of Canada Quantum dot infrared photodetectors (qdip) and methods of making the same
US6055179A (en) 1998-05-19 2000-04-25 Canon Kk Memory device utilizing giant magnetoresistance effect
FI108583B (fi) 1998-06-02 2002-02-15 Nokia Corp Resonaattorirakenteita
JPH11354820A (ja) 1998-06-12 1999-12-24 Sharp Corp 光電変換素子及びその製造方法
US6252261B1 (en) 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
TW399309B (en) 1998-09-30 2000-07-21 World Wiser Electronics Inc Cavity-down package structure with thermal via
US6343171B1 (en) 1998-10-09 2002-01-29 Fujitsu Limited Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making
JP3592553B2 (ja) 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6241821B1 (en) 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6248459B1 (en) 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6107721A (en) 1999-07-27 2000-08-22 Tfr Technologies, Inc. Piezoelectric resonators on a differentially offset reflector
US6291319B1 (en) 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6479173B1 (en) 1999-12-17 2002-11-12 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US20010013313A1 (en) 2000-02-10 2001-08-16 Motorola, Inc. Apparatus for fabricating semiconductor structures and method of forming the structures
US6313486B1 (en) 2000-06-15 2001-11-06 Board Of Regents, The University Of Texas System Floating gate transistor having buried strained silicon germanium channel layer
US6224669B1 (en) 2000-09-14 2001-05-01 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

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TW557584B (en) 2003-10-11
ATE314669T1 (de) 2006-01-15
WO2002027362A3 (en) 2003-07-31
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JP2004527778A (ja) 2004-09-09
CN1239930C (zh) 2006-02-01
US6493497B1 (en) 2002-12-10
CN1543580A (zh) 2004-11-03
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EP1354227B1 (en) 2005-12-28
DE60116381D1 (de) 2006-02-02
DE60116381T2 (de) 2006-07-13

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