DE10062570C1
(de)
*
|
2000-12-15 |
2002-06-13 |
Infineon Technologies Ag |
Schaltungsanordnung zur Steuerung von Schreib- und Lesevorgängen in einer magnetoresistiven Speicheranordnung (MRAM)
|
US6490194B2
(en)
*
|
2001-01-24 |
2002-12-03 |
Infineon Technologies Ag |
Serial MRAM device
|
JP2002230965A
(ja)
*
|
2001-01-24 |
2002-08-16 |
Internatl Business Mach Corp <Ibm> |
不揮発性メモリ装置
|
DE10103313A1
(de)
*
|
2001-01-25 |
2002-08-22 |
Infineon Technologies Ag |
MRAM-Anordnung
|
US6418046B1
(en)
*
|
2001-01-30 |
2002-07-09 |
Motorola, Inc. |
MRAM architecture and system
|
JP2002299584A
(ja)
*
|
2001-04-03 |
2002-10-11 |
Mitsubishi Electric Corp |
磁気ランダムアクセスメモリ装置および半導体装置
|
US6574137B2
(en)
*
|
2001-08-30 |
2003-06-03 |
Micron Technology, Inc. |
Single ended row select for a MRAM device
|
JP4780874B2
(ja)
*
|
2001-09-04 |
2011-09-28 |
ルネサスエレクトロニクス株式会社 |
薄膜磁性体記憶装置
|
JP3853199B2
(ja)
*
|
2001-11-08 |
2006-12-06 |
Necエレクトロニクス株式会社 |
半導体記憶装置及び半導体記憶装置の読み出し方法
|
JP4073690B2
(ja)
*
|
2001-11-14 |
2008-04-09 |
株式会社ルネサステクノロジ |
薄膜磁性体記憶装置
|
US6944048B2
(en)
*
|
2001-11-29 |
2005-09-13 |
Kabushiki Kaisha Toshiba |
Magnetic random access memory
|
JP2003242771A
(ja)
*
|
2002-02-15 |
2003-08-29 |
Toshiba Corp |
半導体記憶装置
|
US6606263B1
(en)
*
|
2002-04-19 |
2003-08-12 |
Taiwan Semiconductor Manufacturing Company |
Non-disturbing programming scheme for magnetic RAM
|
US6597049B1
(en)
*
|
2002-04-25 |
2003-07-22 |
Hewlett-Packard Development Company, L.P. |
Conductor structure for a magnetic memory
|
KR20030089078A
(ko)
*
|
2002-05-16 |
2003-11-21 |
주식회사 하이닉스반도체 |
자기터널접합소자를 갖는 자기메모리셀
|
CN1184643C
(zh)
*
|
2002-07-29 |
2005-01-12 |
财团法人工业技术研究院 |
具有低写入电流的磁性随机存取内存
|
US6970375B2
(en)
*
|
2002-08-02 |
2005-11-29 |
Unity Semiconductor Corporation |
Providing a reference voltage to a cross point memory array
|
JP4212325B2
(ja)
*
|
2002-09-30 |
2009-01-21 |
株式会社ルネサステクノロジ |
不揮発性記憶装置
|
US7224556B2
(en)
|
2002-10-24 |
2007-05-29 |
Hitachi Global Storage Technologies Netherlands B.V. |
Self-pinned CPP magnetoresistive sensor
|
US6806127B2
(en)
*
|
2002-12-03 |
2004-10-19 |
Freescale Semiconductor, Inc. |
Method and structure for contacting an overlying electrode for a magnetoelectronics element
|
JP3766380B2
(ja)
*
|
2002-12-25 |
2006-04-12 |
株式会社東芝 |
磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法
|
US6909631B2
(en)
*
|
2003-10-02 |
2005-06-21 |
Freescale Semiconductor, Inc. |
MRAM and methods for reading the MRAM
|
US6888743B2
(en)
*
|
2002-12-27 |
2005-05-03 |
Freescale Semiconductor, Inc. |
MRAM architecture
|
JP2004213771A
(ja)
*
|
2002-12-27 |
2004-07-29 |
Toshiba Corp |
磁気ランダムアクセスメモリ
|
US6711053B1
(en)
*
|
2003-01-29 |
2004-03-23 |
Taiwan Semiconductor Manufacturing Company |
Scaleable high performance magnetic random access memory cell and array
|
JP2004253111A
(ja)
*
|
2003-01-31 |
2004-09-09 |
Sharp Corp |
光ピックアップ装置
|
US7173846B2
(en)
*
|
2003-02-13 |
2007-02-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Magnetic RAM and array architecture using a two transistor, one MTJ cell
|
JP4167513B2
(ja)
*
|
2003-03-06 |
2008-10-15 |
シャープ株式会社 |
不揮発性半導体記憶装置
|
US6816405B1
(en)
*
|
2003-06-02 |
2004-11-09 |
International Business Machines Corporation |
Segmented word line architecture for cross point magnetic random access memory
|
JP4716867B2
(ja)
*
|
2003-06-24 |
2011-07-06 |
インターナショナル・ビジネス・マシーンズ・コーポレーション |
Fetベースの磁気ランダム・アクセス・メモリ・デバイス用の自己整列型導電線およびこれを形成する方法
|
US20050073878A1
(en)
*
|
2003-10-03 |
2005-04-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Multi-sensing level MRAM structure with different magnetoresistance ratios
|
US6925000B2
(en)
|
2003-12-12 |
2005-08-02 |
Maglabs, Inc. |
Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
|
JP4499740B2
(ja)
*
|
2003-12-26 |
2010-07-07 |
パナソニック株式会社 |
記憶素子、メモリ回路、半導体集積回路
|
US6873535B1
(en)
|
2004-02-04 |
2005-03-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Multiple width and/or thickness write line in MRAM
|
US7105879B2
(en)
*
|
2004-04-20 |
2006-09-12 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Write line design in MRAM
|
FR2871921A1
(fr)
*
|
2004-06-16 |
2005-12-23 |
St Microelectronics Sa |
Architecture de memoire a lignes d'ecriture segmentees
|
US7372728B2
(en)
*
|
2004-06-16 |
2008-05-13 |
Stmicroelectronics, Inc. |
Magnetic random access memory array having bit/word lines for shared write select and read operations
|
US7209383B2
(en)
*
|
2004-06-16 |
2007-04-24 |
Stmicroelectronics, Inc. |
Magnetic random access memory array having bit/word lines for shared write select and read operations
|
US7301800B2
(en)
*
|
2004-06-30 |
2007-11-27 |
Stmicroelectronics, Inc. |
Multi-bit magnetic random access memory element
|
US7136298B2
(en)
*
|
2004-06-30 |
2006-11-14 |
Stmicroelectronics, Inc. |
Magnetic random access memory array with global write lines
|
US7061037B2
(en)
*
|
2004-07-06 |
2006-06-13 |
Maglabs, Inc. |
Magnetic random access memory with multiple memory layers and improved memory cell selectivity
|
US7221584B2
(en)
*
|
2004-08-13 |
2007-05-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
MRAM cell having shared configuration
|
US7075818B2
(en)
*
|
2004-08-23 |
2006-07-11 |
Maglabs, Inc. |
Magnetic random access memory with stacked memory layers having access lines for writing and reading
|
JP2008517660A
(ja)
|
2004-10-22 |
2008-05-29 |
ザ ボード オブ トラスティーズ オブ ザ ユニバーシティ オブ イリノイ |
生物剤を送達する中空かつ多孔質の整形外科用または歯科用のインプラント
|
US7286393B2
(en)
|
2005-03-31 |
2007-10-23 |
Honeywell International Inc. |
System and method for hardening MRAM bits
|
DE102005046739B4
(de)
*
|
2005-09-29 |
2009-01-08 |
Qimonda Ag |
Ein quasi-selbstpositionierender MRAM-Kontakt
|
JP2008159612A
(ja)
*
|
2006-12-20 |
2008-07-10 |
Toshiba Corp |
半導体記憶装置
|
US8130528B2
(en)
|
2008-08-25 |
2012-03-06 |
Sandisk 3D Llc |
Memory system with sectional data lines
|
US8027209B2
(en)
|
2008-10-06 |
2011-09-27 |
Sandisk 3D, Llc |
Continuous programming of non-volatile memory
|
US8279650B2
(en)
*
|
2009-04-20 |
2012-10-02 |
Sandisk 3D Llc |
Memory system with data line switching scheme
|
US10366970B2
(en)
|
2009-10-12 |
2019-07-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10388863B2
(en)
|
2009-10-12 |
2019-08-20 |
Monolithic 3D Inc. |
3D memory device and structure
|
US11374118B2
(en)
|
2009-10-12 |
2022-06-28 |
Monolithic 3D Inc. |
Method to form a 3D integrated circuit
|
US11018133B2
(en)
|
2009-10-12 |
2021-05-25 |
Monolithic 3D Inc. |
3D integrated circuit
|
US10043781B2
(en)
|
2009-10-12 |
2018-08-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US12027518B1
(en)
|
2009-10-12 |
2024-07-02 |
Monolithic 3D Inc. |
3D semiconductor devices and structures with metal layers
|
US10157909B2
(en)
|
2009-10-12 |
2018-12-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11984445B2
(en)
|
2009-10-12 |
2024-05-14 |
Monolithic 3D Inc. |
3D semiconductor devices and structures with metal layers
|
US10910364B2
(en)
|
2009-10-12 |
2021-02-02 |
Monolitaic 3D Inc. |
3D semiconductor device
|
US10354995B2
(en)
|
2009-10-12 |
2019-07-16 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US10217667B2
(en)
|
2011-06-28 |
2019-02-26 |
Monolithic 3D Inc. |
3D semiconductor device, fabrication method and system
|
US8446757B2
(en)
*
|
2010-08-18 |
2013-05-21 |
International Business Machines Corporation |
Spin-torque transfer magneto-resistive memory architecture
|
US10497713B2
(en)
|
2010-11-18 |
2019-12-03 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11482440B2
(en)
|
2010-12-16 |
2022-10-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
|
US11018191B1
(en)
|
2010-10-11 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11469271B2
(en)
|
2010-10-11 |
2022-10-11 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US11024673B1
(en)
|
2010-10-11 |
2021-06-01 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11600667B1
(en)
|
2010-10-11 |
2023-03-07 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US11158674B2
(en)
|
2010-10-11 |
2021-10-26 |
Monolithic 3D Inc. |
Method to produce a 3D semiconductor device and structure
|
US11227897B2
(en)
|
2010-10-11 |
2022-01-18 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US11315980B1
(en)
|
2010-10-11 |
2022-04-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure with transistors
|
US11257867B1
(en)
|
2010-10-11 |
2022-02-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with oxide bonds
|
US10290682B2
(en)
|
2010-10-11 |
2019-05-14 |
Monolithic 3D Inc. |
3D IC semiconductor device and structure with stacked memory
|
US10896931B1
(en)
|
2010-10-11 |
2021-01-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10833108B2
(en)
|
2010-10-13 |
2020-11-10 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US11855114B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11694922B2
(en)
|
2010-10-13 |
2023-07-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US10943934B2
(en)
|
2010-10-13 |
2021-03-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11404466B2
(en)
|
2010-10-13 |
2022-08-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11855100B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US10679977B2
(en)
|
2010-10-13 |
2020-06-09 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US11327227B2
(en)
|
2010-10-13 |
2022-05-10 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US11984438B2
(en)
|
2010-10-13 |
2024-05-14 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11043523B1
(en)
|
2010-10-13 |
2021-06-22 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US10978501B1
(en)
|
2010-10-13 |
2021-04-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US10998374B1
(en)
|
2010-10-13 |
2021-05-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11163112B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US11605663B2
(en)
|
2010-10-13 |
2023-03-14 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11164898B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11063071B1
(en)
|
2010-10-13 |
2021-07-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US11929372B2
(en)
|
2010-10-13 |
2024-03-12 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11133344B2
(en)
|
2010-10-13 |
2021-09-28 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11869915B2
(en)
|
2010-10-13 |
2024-01-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11437368B2
(en)
|
2010-10-13 |
2022-09-06 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11211279B2
(en)
|
2010-11-18 |
2021-12-28 |
Monolithic 3D Inc. |
Method for processing a 3D integrated circuit and structure
|
US11615977B2
(en)
|
2010-11-18 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11482439B2
(en)
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
|
US11031275B2
(en)
|
2010-11-18 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11004719B1
(en)
|
2010-11-18 |
2021-05-11 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11610802B2
(en)
|
2010-11-18 |
2023-03-21 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
|
US11901210B2
(en)
|
2010-11-18 |
2024-02-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11094576B1
(en)
|
2010-11-18 |
2021-08-17 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11164770B1
(en)
|
2010-11-18 |
2021-11-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US11355381B2
(en)
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11443971B2
(en)
|
2010-11-18 |
2022-09-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11508605B2
(en)
|
2010-11-18 |
2022-11-22 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11923230B1
(en)
|
2010-11-18 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11355380B2
(en)
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
|
US11121021B2
(en)
|
2010-11-18 |
2021-09-14 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11862503B2
(en)
|
2010-11-18 |
2024-01-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11482438B2
(en)
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11735462B2
(en)
|
2010-11-18 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11107721B2
(en)
|
2010-11-18 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with NAND logic
|
US11521888B2
(en)
|
2010-11-18 |
2022-12-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure with high-k metal gate transistors
|
US11495484B2
(en)
|
2010-11-18 |
2022-11-08 |
Monolithic 3D Inc. |
3D semiconductor devices and structures with at least two single-crystal layers
|
US11018042B1
(en)
|
2010-11-18 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US12033884B2
(en)
|
2010-11-18 |
2024-07-09 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US12068187B2
(en)
|
2010-11-18 |
2024-08-20 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding and DRAM memory cells
|
US11569117B2
(en)
|
2010-11-18 |
2023-01-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11854857B1
(en)
|
2010-11-18 |
2023-12-26 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11804396B2
(en)
|
2010-11-18 |
2023-10-31 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11784082B2
(en)
|
2010-11-18 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US8890266B2
(en)
|
2011-01-31 |
2014-11-18 |
Everspin Technologies, Inc. |
Fabrication process and layout for magnetic sensor arrays
|
KR101983651B1
(ko)
*
|
2011-05-31 |
2019-05-29 |
에버스핀 테크놀러지스, 인크. |
Mram 장 교란 검출 및 복구
|
US10388568B2
(en)
|
2011-06-28 |
2019-08-20 |
Monolithic 3D Inc. |
3D semiconductor device and system
|
US11881443B2
(en)
|
2012-04-09 |
2024-01-23 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US10600888B2
(en)
|
2012-04-09 |
2020-03-24 |
Monolithic 3D Inc. |
3D semiconductor device
|
US11616004B1
(en)
|
2012-04-09 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11164811B2
(en)
|
2012-04-09 |
2021-11-02 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers and oxide-to-oxide bonding
|
US11476181B1
(en)
|
2012-04-09 |
2022-10-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11410912B2
(en)
|
2012-04-09 |
2022-08-09 |
Monolithic 3D Inc. |
3D semiconductor device with vias and isolation layers
|
US11088050B2
(en)
|
2012-04-09 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers
|
US11735501B1
(en)
|
2012-04-09 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11694944B1
(en)
|
2012-04-09 |
2023-07-04 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11594473B2
(en)
|
2012-04-09 |
2023-02-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US9159381B2
(en)
*
|
2012-05-04 |
2015-10-13 |
Qualcomm Incorporated |
Tunable reference circuit
|
US8995180B2
(en)
*
|
2012-11-29 |
2015-03-31 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Magnetoresistive random access memory (MRAM) differential bit cell and method of use
|
US11018116B2
(en)
|
2012-12-22 |
2021-05-25 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11961827B1
(en)
|
2012-12-22 |
2024-04-16 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US12051674B2
(en)
|
2012-12-22 |
2024-07-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11217565B2
(en)
|
2012-12-22 |
2022-01-04 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11784169B2
(en)
|
2012-12-22 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11309292B2
(en)
|
2012-12-22 |
2022-04-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11967583B2
(en)
|
2012-12-22 |
2024-04-23 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11063024B1
(en)
|
2012-12-22 |
2021-07-13 |
Monlithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11916045B2
(en)
|
2012-12-22 |
2024-02-27 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US10600657B2
(en)
|
2012-12-29 |
2020-03-24 |
Monolithic 3D Inc |
3D semiconductor device and structure
|
US11087995B1
(en)
|
2012-12-29 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11430667B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US10651054B2
(en)
|
2012-12-29 |
2020-05-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11177140B2
(en)
|
2012-12-29 |
2021-11-16 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10903089B1
(en)
|
2012-12-29 |
2021-01-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11004694B1
(en)
|
2012-12-29 |
2021-05-11 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10115663B2
(en)
|
2012-12-29 |
2018-10-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11430668B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US10892169B2
(en)
|
2012-12-29 |
2021-01-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11869965B2
(en)
|
2013-03-11 |
2024-01-09 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US11935949B1
(en)
|
2013-03-11 |
2024-03-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US8902663B1
(en)
|
2013-03-11 |
2014-12-02 |
Monolithic 3D Inc. |
Method of maintaining a memory state
|
US10325651B2
(en)
|
2013-03-11 |
2019-06-18 |
Monolithic 3D Inc. |
3D semiconductor device with stacked memory
|
US10840239B2
(en)
|
2014-08-26 |
2020-11-17 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11923374B2
(en)
|
2013-03-12 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11088130B2
(en)
|
2014-01-28 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11398569B2
(en)
|
2013-03-12 |
2022-07-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9117749B1
(en)
*
|
2013-03-15 |
2015-08-25 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10224279B2
(en)
|
2013-03-15 |
2019-03-05 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11030371B2
(en)
|
2013-04-15 |
2021-06-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11270055B1
(en)
|
2013-04-15 |
2022-03-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11487928B2
(en)
|
2013-04-15 |
2022-11-01 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US9021414B1
(en)
|
2013-04-15 |
2015-04-28 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11341309B1
(en)
|
2013-04-15 |
2022-05-24 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11720736B2
(en)
|
2013-04-15 |
2023-08-08 |
Monolithic 3D Inc. |
Automation methods for 3D integrated circuits and devices
|
US11574109B1
(en)
|
2013-04-15 |
2023-02-07 |
Monolithic 3D Inc |
Automation methods for 3D integrated circuits and devices
|
KR102116792B1
(ko)
|
2013-12-04 |
2020-05-29 |
삼성전자 주식회사 |
자기 메모리 장치, 이의 동작 방법 및 이를 포함하는 반도체 시스템
|
US11107808B1
(en)
|
2014-01-28 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10297586B2
(en)
|
2015-03-09 |
2019-05-21 |
Monolithic 3D Inc. |
Methods for processing a 3D semiconductor device
|
US11031394B1
(en)
|
2014-01-28 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
CN104134455B
(zh)
*
|
2014-07-17 |
2017-04-19 |
北京航空航天大学 |
一种磁逻辑器件的并联编程电路
|
US10825779B2
(en)
|
2015-04-19 |
2020-11-03 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10381328B2
(en)
|
2015-04-19 |
2019-08-13 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11011507B1
(en)
|
2015-04-19 |
2021-05-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11056468B1
(en)
|
2015-04-19 |
2021-07-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
KR102354350B1
(ko)
|
2015-05-18 |
2022-01-21 |
삼성전자주식회사 |
메모리 장치 및 이를 포함하는 메모리 시스템
|
US11956952B2
(en)
|
2015-08-23 |
2024-04-09 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US11114427B2
(en)
|
2015-11-07 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor processor and memory device and structure
|
US11978731B2
(en)
|
2015-09-21 |
2024-05-07 |
Monolithic 3D Inc. |
Method to produce a multi-level semiconductor memory device and structure
|
US10515981B2
(en)
|
2015-09-21 |
2019-12-24 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with memory
|
US11937422B2
(en)
|
2015-11-07 |
2024-03-19 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US10522225B1
(en)
|
2015-10-02 |
2019-12-31 |
Monolithic 3D Inc. |
Semiconductor device with non-volatile memory
|
US11296115B1
(en)
|
2015-10-24 |
2022-04-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11114464B2
(en)
|
2015-10-24 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10847540B2
(en)
|
2015-10-24 |
2020-11-24 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11991884B1
(en)
|
2015-10-24 |
2024-05-21 |
Monolithic 3D Inc. |
3D semiconductor device and structure with logic and memory
|
US12035531B2
(en)
|
2015-10-24 |
2024-07-09 |
Monolithic 3D Inc. |
3D semiconductor device and structure with logic and memory
|
US10418369B2
(en)
|
2015-10-24 |
2019-09-17 |
Monolithic 3D Inc. |
Multi-level semiconductor memory device and structure
|
US12016181B2
(en)
|
2015-10-24 |
2024-06-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure with logic and memory
|
US11869591B2
(en)
|
2016-10-10 |
2024-01-09 |
Monolithic 3D Inc. |
3D memory devices and structures with control circuits
|
US11329059B1
(en)
|
2016-10-10 |
2022-05-10 |
Monolithic 3D Inc. |
3D memory devices and structures with thinned single crystal substrates
|
US11930648B1
(en)
|
2016-10-10 |
2024-03-12 |
Monolithic 3D Inc. |
3D memory devices and structures with metal layers
|
US11812620B2
(en)
|
2016-10-10 |
2023-11-07 |
Monolithic 3D Inc. |
3D DRAM memory devices and structures with control circuits
|
US11711928B2
(en)
|
2016-10-10 |
2023-07-25 |
Monolithic 3D Inc. |
3D memory devices and structures with control circuits
|
US11251149B2
(en)
|
2016-10-10 |
2022-02-15 |
Monolithic 3D Inc. |
3D memory device and structure
|
CN111742366B
(zh)
*
|
2018-06-14 |
2022-08-26 |
华为技术有限公司 |
存储器
|
US11018156B2
(en)
|
2019-04-08 |
2021-05-25 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11296106B2
(en)
|
2019-04-08 |
2022-04-05 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11763864B2
(en)
|
2019-04-08 |
2023-09-19 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures with bit-line pillars
|
US10892016B1
(en)
|
2019-04-08 |
2021-01-12 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11158652B1
(en)
|
2019-04-08 |
2021-10-26 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
CN112927736B
(zh)
*
|
2019-12-05 |
2023-12-29 |
上海磁宇信息科技有限公司 |
磁性随机存储器之读写电路
|
US11164610B1
(en)
|
2020-06-05 |
2021-11-02 |
Qualcomm Incorporated |
Memory device with built-in flexible double redundancy
|
US11177010B1
(en)
*
|
2020-07-13 |
2021-11-16 |
Qualcomm Incorporated |
Bitcell for data redundancy
|
US11651807B2
(en)
*
|
2020-12-07 |
2023-05-16 |
Everspin Technologies, Inc. |
Midpoint sensing reference generation for STT-MRAM
|