AU2001283409A1 - Novel method and structure for reliable data copy operation for non-volatile memories - Google Patents

Novel method and structure for reliable data copy operation for non-volatile memories

Info

Publication number
AU2001283409A1
AU2001283409A1 AU2001283409A AU8340901A AU2001283409A1 AU 2001283409 A1 AU2001283409 A1 AU 2001283409A1 AU 2001283409 A AU2001283409 A AU 2001283409A AU 8340901 A AU8340901 A AU 8340901A AU 2001283409 A1 AU2001283409 A1 AU 2001283409A1
Authority
AU
Australia
Prior art keywords
data
novel method
copy operation
volatile memories
data copy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001283409A
Other languages
English (en)
Inventor
Kevin M. Conley
Carlos J. Gonzalez
Daniel C. Guterman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of AU2001283409A1 publication Critical patent/AU2001283409A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Storage Device Security (AREA)
AU2001283409A 2000-08-21 2001-08-16 Novel method and structure for reliable data copy operation for non-volatile memories Abandoned AU2001283409A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09643151 2000-08-21
US09/643,151 US6266273B1 (en) 2000-08-21 2000-08-21 Method and structure for reliable data copy operation for non-volatile memories
PCT/US2001/025678 WO2002017330A2 (en) 2000-08-21 2001-08-16 Novel method and structure for reliable data copy operation for non-volatile memories

Publications (1)

Publication Number Publication Date
AU2001283409A1 true AU2001283409A1 (en) 2002-03-04

Family

ID=24579568

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001283409A Abandoned AU2001283409A1 (en) 2000-08-21 2001-08-16 Novel method and structure for reliable data copy operation for non-volatile memories

Country Status (10)

Country Link
US (1) US6266273B1 (ja)
EP (1) EP1312095B1 (ja)
JP (1) JP2004507007A (ja)
KR (1) KR100897591B1 (ja)
CN (2) CN101067969B (ja)
AT (1) ATE368926T1 (ja)
AU (1) AU2001283409A1 (ja)
DE (1) DE60129710T2 (ja)
TW (1) TW511087B (ja)
WO (1) WO2002017330A2 (ja)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100544175B1 (ko) * 1999-05-08 2006-01-23 삼성전자주식회사 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법
JP3921024B2 (ja) 2000-02-29 2007-05-30 富士通株式会社 半導体記憶装置
US6349056B1 (en) * 2000-12-28 2002-02-19 Sandisk Corporation Method and structure for efficient data verification operation for non-volatile memories
US6760805B2 (en) * 2001-09-05 2004-07-06 M-Systems Flash Disk Pioneers Ltd. Flash management system for large page size
JP4034949B2 (ja) * 2001-09-06 2008-01-16 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3802411B2 (ja) * 2001-12-20 2006-07-26 株式会社東芝 不揮発性半導体記憶装置のデータコピー方法
US6542407B1 (en) * 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
JP4004811B2 (ja) * 2002-02-06 2007-11-07 株式会社東芝 不揮発性半導体記憶装置
US6829167B2 (en) * 2002-12-12 2004-12-07 Sandisk Corporation Error recovery for nonvolatile memory
KR100543447B1 (ko) * 2003-04-03 2006-01-23 삼성전자주식회사 에러정정기능을 가진 플래쉬메모리장치
IL156468A (en) * 2003-06-16 2013-07-31 Rafael Advanced Defense Sys A task data stack that is utilized for a computer placed inside a shooting tool
US7881133B2 (en) * 2003-11-11 2011-02-01 Samsung Electronics Co., Ltd. Method of managing a flash memory and the flash memory
US6944041B1 (en) * 2004-03-26 2005-09-13 Bae Systems Information And Electronic Systems Integration, Inc. Circuit for accessing a chalcogenide memory array
TWI254947B (en) * 2004-03-28 2006-05-11 Mediatek Inc Data managing method and data access system for storing all management data in a management bank of a non-volatile memory
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US8375146B2 (en) * 2004-08-09 2013-02-12 SanDisk Technologies, Inc. Ring bus structure and its use in flash memory systems
JP4504138B2 (ja) * 2004-09-03 2010-07-14 株式会社東芝 記憶システム及びそのデータコピー方法
KR100634414B1 (ko) * 2004-09-06 2006-10-16 삼성전자주식회사 에러 검출용 패러티 발생기를 구비한 낸드 플래시 메모리 장치 및 그것의 에러 검출 방법
US7466597B2 (en) * 2004-09-09 2008-12-16 Samsung Electronics Co., Ltd. NAND flash memory device and copyback program method for same
US20060095622A1 (en) * 2004-10-28 2006-05-04 Spansion, Llc System and method for improved memory performance in a mobile device
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7409473B2 (en) * 2004-12-21 2008-08-05 Sandisk Corporation Off-chip data relocation
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US7212440B2 (en) * 2004-12-30 2007-05-01 Sandisk Corporation On-chip data grouping and alignment
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7206230B2 (en) * 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7447078B2 (en) 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
KR100626392B1 (ko) * 2005-04-01 2006-09-20 삼성전자주식회사 읽기 속도를 향상시킬 수 있는 플래시 메모리 장치
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7130222B1 (en) * 2005-09-26 2006-10-31 Macronix International Co., Ltd. Nonvolatile memory with program while program verify
US7509471B2 (en) * 2005-10-27 2009-03-24 Sandisk Corporation Methods for adaptively handling data writes in non-volatile memories
US7631162B2 (en) 2005-10-27 2009-12-08 Sandisck Corporation Non-volatile memory with adaptive handling of data writes
KR101197556B1 (ko) * 2006-01-09 2012-11-09 삼성전자주식회사 불 휘발성 메모리의 프로그램 동작을 검증하는 장치 및방법, 그리고 그 장치를 포함한 메모리 카드
US7525855B2 (en) * 2006-04-24 2009-04-28 Sandisk Corporation Method of high-performance flash memory data transfer
US7366028B2 (en) * 2006-04-24 2008-04-29 Sandisk Corporation Method of high-performance flash memory data transfer
US7499339B2 (en) * 2006-07-19 2009-03-03 Sandisk Corporation High-performance flash memory data transfer
US7499369B2 (en) * 2006-07-19 2009-03-03 Sandisk Corporation Method of high-performance flash memory data transfer
US7366029B2 (en) * 2006-04-24 2008-04-29 Sandisk Corporation High-performance flash memory data transfer
US7345926B2 (en) * 2006-04-24 2008-03-18 Sandisk Corporation High-performance flash memory data transfer
WO2007131062A2 (en) 2006-05-05 2007-11-15 Sandisk Corporation Non-volatile memory with background data latch caching during read operations and methods therefor
US7876613B2 (en) 2006-05-18 2011-01-25 Samsung Electronics Co., Ltd. Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards
KR100778082B1 (ko) * 2006-05-18 2007-11-21 삼성전자주식회사 단일의 래치 구조를 갖는 멀티-비트 플래시 메모리 장치,그것의 프로그램 방법, 그리고 그것을 포함하는 메모리카드
KR100747759B1 (ko) 2006-08-16 2007-08-08 연세대학교 산학협력단 플래시 메모리 장치 및 그 인터페이스 장치
KR100919156B1 (ko) * 2006-08-24 2009-09-28 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 방법
US7885112B2 (en) * 2007-09-07 2011-02-08 Sandisk Corporation Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
US7734861B2 (en) * 2006-09-08 2010-06-08 Sandisk Corporation Pseudo random and command driven bit compensation for the cycling effects in flash memory
US7606966B2 (en) * 2006-09-08 2009-10-20 Sandisk Corporation Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
KR100791839B1 (ko) * 2006-10-31 2008-01-07 삼성전자주식회사 데이터 읽기 시 데이터 스트로브 신호를 발생할 수 있는비휘발성 메모리 장치와 그 방법
US8023338B2 (en) 2006-12-22 2011-09-20 Sidense Corp. Dual function data register
US7502255B2 (en) * 2007-03-07 2009-03-10 Sandisk Corporation Method for cache page copy in a non-volatile memory
US7499320B2 (en) * 2007-03-07 2009-03-03 Sandisk Corporation Non-volatile memory with cache page copy
US20090106513A1 (en) * 2007-10-22 2009-04-23 Chuang Cheng Method for copying data in non-volatile memory system
JP5183403B2 (ja) * 2008-09-30 2013-04-17 株式会社日立製作所 ストレージシステムおよび制御プログラムならびにストレージシステム制御方法
US8762621B2 (en) 2008-10-28 2014-06-24 Micron Technology, Inc. Logical unit operation
US8316201B2 (en) * 2008-12-18 2012-11-20 Sandisk Il Ltd. Methods for executing a command to write data from a source location to a destination location in a memory device
US20100161932A1 (en) * 2008-12-18 2010-06-24 Ori Moshe Stern Methods for writing data from a source location to a destination location in a memory device
US8832353B2 (en) * 2009-04-07 2014-09-09 Sandisk Technologies Inc. Host stop-transmission handling
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US8027195B2 (en) * 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8307241B2 (en) * 2009-06-16 2012-11-06 Sandisk Technologies Inc. Data recovery in multi-level cell nonvolatile memory
US8132045B2 (en) * 2009-06-16 2012-03-06 SanDisk Technologies, Inc. Program failure handling in nonvolatile memory
US20110002169A1 (en) * 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8144512B2 (en) * 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US8468294B2 (en) * 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8443263B2 (en) * 2009-12-30 2013-05-14 Sandisk Technologies Inc. Method and controller for performing a copy-back operation
JP5204265B2 (ja) * 2010-01-29 2013-06-05 株式会社東芝 半導体記憶装置及び半導体記憶装置の制御方法
JP4745465B1 (ja) * 2010-01-29 2011-08-10 株式会社東芝 半導体記憶装置及び半導体記憶装置の制御方法
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US8843693B2 (en) 2011-05-17 2014-09-23 SanDisk Technologies, Inc. Non-volatile memory and method with improved data scrambling
KR101893145B1 (ko) * 2011-12-06 2018-10-05 삼성전자주식회사 메모리 시스템들 및 그것들의 블록 복사 방법들
US8799598B2 (en) 2012-02-17 2014-08-05 Spansion Llc Redundancy loading efficiency
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US20130254463A1 (en) * 2012-03-23 2013-09-26 Kabushiki Kaisha Toshiba Memory system
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9037902B2 (en) 2013-03-15 2015-05-19 Sandisk Technologies Inc. Flash memory techniques for recovering from write interrupt resulting from voltage fault
KR102200489B1 (ko) 2014-05-30 2021-01-11 삼성전자주식회사 비휘발성 메모리 장치 및 그것을 포함하는 저장 장치
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US10636459B2 (en) * 2018-05-30 2020-04-28 Micron Technology, Inc. Wear leveling
CN110175056B (zh) * 2019-05-30 2022-02-11 西安微电子技术研究所 一种异构平台远程动态加载多目标fpga的控制装置及控制方法
US11138071B1 (en) 2020-06-22 2021-10-05 Western Digital Technologies, Inc. On-chip parity buffer management for storage block combining in non-volatile memory

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW231343B (ja) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
US5890192A (en) 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
US5745418A (en) * 1996-11-25 1998-04-28 Macronix International Co., Ltd. Flash memory mass storage system
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
US6040997A (en) 1998-03-25 2000-03-21 Lexar Media, Inc. Flash memory leveling architecture having no external latch
TW368626B (en) * 1998-04-17 1999-09-01 Winbond Electronics Corp Microprocessor with self-programmed embedded flash memory and programming method

Also Published As

Publication number Publication date
CN1329924C (zh) 2007-08-01
CN1447976A (zh) 2003-10-08
EP1312095B1 (en) 2007-08-01
CN101067969A (zh) 2007-11-07
US6266273B1 (en) 2001-07-24
WO2002017330A2 (en) 2002-02-28
ATE368926T1 (de) 2007-08-15
JP2004507007A (ja) 2004-03-04
EP1312095A2 (en) 2003-05-21
KR100897591B1 (ko) 2009-05-14
DE60129710D1 (de) 2007-09-13
KR20030043934A (ko) 2003-06-02
TW511087B (en) 2002-11-21
DE60129710T2 (de) 2008-06-05
WO2002017330A3 (en) 2002-06-27
CN101067969B (zh) 2010-06-16

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