AU2001281072A1 - Composition for cleaning chemical mechanical planarization apparatus - Google Patents

Composition for cleaning chemical mechanical planarization apparatus

Info

Publication number
AU2001281072A1
AU2001281072A1 AU2001281072A AU8107201A AU2001281072A1 AU 2001281072 A1 AU2001281072 A1 AU 2001281072A1 AU 2001281072 A AU2001281072 A AU 2001281072A AU 8107201 A AU8107201 A AU 8107201A AU 2001281072 A1 AU2001281072 A1 AU 2001281072A1
Authority
AU
Australia
Prior art keywords
composition
chemical mechanical
mechanical planarization
cleaning chemical
planarization apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001281072A
Other languages
English (en)
Inventor
Joo-Yun Lee
Robert J. Small
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EKC Technology Inc
Original Assignee
EKC Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EKC Technology Inc filed Critical EKC Technology Inc
Publication of AU2001281072A1 publication Critical patent/AU2001281072A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AU2001281072A 2000-08-07 2001-08-03 Composition for cleaning chemical mechanical planarization apparatus Abandoned AU2001281072A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/632,899 US6498131B1 (en) 2000-08-07 2000-08-07 Composition for cleaning chemical mechanical planarization apparatus
US09/632,899 2000-08-07
PCT/US2001/024515 WO2002013242A2 (en) 2000-08-07 2001-08-03 Composition for cleaning chemical mechanical planarization apparatus

Publications (1)

Publication Number Publication Date
AU2001281072A1 true AU2001281072A1 (en) 2002-02-18

Family

ID=24537426

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001281072A Abandoned AU2001281072A1 (en) 2000-08-07 2001-08-03 Composition for cleaning chemical mechanical planarization apparatus

Country Status (10)

Country Link
US (2) US6498131B1 (zh)
EP (1) EP1315792B1 (zh)
JP (1) JP2004506322A (zh)
KR (1) KR100851358B1 (zh)
CN (1) CN1227342C (zh)
AU (1) AU2001281072A1 (zh)
DE (1) DE60117809T2 (zh)
SG (1) SG125159A1 (zh)
TW (1) TWI245311B (zh)
WO (1) WO2002013242A2 (zh)

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US6498131B1 (en) * 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
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US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
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KR100630737B1 (ko) * 2005-02-04 2006-10-02 삼성전자주식회사 금속 ｃｍｐ 후 세정액 및 이를 이용한 반도체 소자의금속 배선 형성 방법
US7674725B2 (en) * 2005-05-25 2010-03-09 Freescale Semiconductor, Inc. Treatment solution and method of applying a passivating layer
EP1945748A4 (en) * 2005-10-13 2009-01-07 Advanced Tech Materials PHOTORESIN REMOVAL AND / OR SACRIFICIAL ANTIREFLECTION COATING COMPOSITION COMPATIBLE WITH METALS
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
JP4804986B2 (ja) * 2006-03-30 2011-11-02 富士フイルム株式会社 半導体デバイス用基板の洗浄液及びそれを用いた洗浄方法
US7939941B2 (en) 2007-06-27 2011-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of through via before contact processing
TWI437093B (zh) * 2007-08-03 2014-05-11 Epoch Material Co Ltd 半導體銅製程用水相清洗組合物
US8853830B2 (en) 2008-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. System, structure, and method of manufacturing a semiconductor substrate stack
US20100062164A1 (en) * 2008-09-08 2010-03-11 Lam Research Methods and Solutions for Preventing the Formation of Metal Particulate Defect Matter Upon a Substrate After a Plating Process
US7700535B1 (en) * 2009-01-12 2010-04-20 Ppt Research Wafer/Ingot cleaning in wire saw cutting comprising an ethoxylated alcohol/polyalkylsiloxane mixture
US8691664B2 (en) * 2009-04-20 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Backside process for a substrate
TWI447224B (zh) * 2009-12-25 2014-08-01 Uwiz Technology Co Ltd 使用於半導體晶圓製造之清洗組成物
US20140318584A1 (en) * 2011-01-13 2014-10-30 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium-containing solutions
JP5767898B2 (ja) * 2011-08-12 2015-08-26 株式会社東芝 半導体装置の製造方法
US9367146B2 (en) * 2011-11-14 2016-06-14 Logiteh Europe S.A. Input device with multiple touch-sensitive zones
TWI572711B (zh) 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
US8647445B1 (en) * 2012-11-06 2014-02-11 International Business Machines Corporation Process for cleaning semiconductor devices and/or tooling during manufacturing thereof
US9058976B2 (en) 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
US9576789B2 (en) 2013-01-29 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus, method, and composition for far edge wafer cleaning
EP2983195A1 (en) 2014-08-04 2016-02-10 EpiGan NV Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure
US10109523B2 (en) 2016-11-29 2018-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of cleaning wafer after CMP
CN108102554A (zh) * 2017-12-21 2018-06-01 北京世纪金光半导体有限公司 一种去除二氧化硅颗粒的抛光液
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CN110900455A (zh) * 2018-09-17 2020-03-24 长鑫存储技术有限公司 晶圆清洗液、化学机械研磨后清洗方法及晶圆
EP4204529A1 (en) * 2020-08-28 2023-07-05 Versum Materials US, LLC Post chemical mechanical planarization (cmp) cleaning

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Also Published As

Publication number Publication date
EP1315792A2 (en) 2003-06-04
DE60117809D1 (de) 2006-05-04
US6852682B2 (en) 2005-02-08
DE60117809T2 (de) 2006-11-02
US20030073601A1 (en) 2003-04-17
WO2002013242A2 (en) 2002-02-14
KR20030046404A (ko) 2003-06-12
JP2004506322A (ja) 2004-02-26
WO2002013242A3 (en) 2003-04-03
KR100851358B1 (ko) 2008-08-08
TWI245311B (en) 2005-12-11
CN1449437A (zh) 2003-10-15
EP1315792B1 (en) 2006-03-08
CN1227342C (zh) 2005-11-16
SG125159A1 (en) 2006-09-29
US6498131B1 (en) 2002-12-24

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