AU2001277692A1 - Integrated capacitive device with hydrogen degradable dielectric layer protectedby getter layer - Google Patents

Integrated capacitive device with hydrogen degradable dielectric layer protectedby getter layer

Info

Publication number
AU2001277692A1
AU2001277692A1 AU2001277692A AU7769201A AU2001277692A1 AU 2001277692 A1 AU2001277692 A1 AU 2001277692A1 AU 2001277692 A AU2001277692 A AU 2001277692A AU 7769201 A AU7769201 A AU 7769201A AU 2001277692 A1 AU2001277692 A1 AU 2001277692A1
Authority
AU
Australia
Prior art keywords
protectedby
hydrogen
layer
capacitive device
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001277692A
Other languages
English (en)
Inventor
Marco Amiotti
Claudio Boffito
Jae Hak Jung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SAES Getters SpA
Original Assignee
SAES Getters SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SAES Getters SpA filed Critical SAES Getters SpA
Publication of AU2001277692A1 publication Critical patent/AU2001277692A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
AU2001277692A 2000-07-28 2001-07-25 Integrated capacitive device with hydrogen degradable dielectric layer protectedby getter layer Abandoned AU2001277692A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IT2000MI001753A IT1318279B1 (it) 2000-07-28 2000-07-28 Dispositivo capacitivo integrato con strato dielettrico degradabiledall'idrogeno protetto da strato getter.
ITMI200A001753 2000-07-28
PCT/IT2001/000399 WO2002011192A1 (en) 2000-07-28 2001-07-25 Integrated capacitive device with hydrogen degradable dielectric layer protected by getter layer

Publications (1)

Publication Number Publication Date
AU2001277692A1 true AU2001277692A1 (en) 2002-02-13

Family

ID=11445610

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001277692A Abandoned AU2001277692A1 (en) 2000-07-28 2001-07-25 Integrated capacitive device with hydrogen degradable dielectric layer protectedby getter layer

Country Status (9)

Country Link
US (1) US6762446B2 (it)
EP (1) EP1305822A1 (it)
JP (1) JP2004505463A (it)
CN (1) CN1193404C (it)
AU (1) AU2001277692A1 (it)
HK (1) HK1057646A1 (it)
IT (1) IT1318279B1 (it)
TW (1) TW516215B (it)
WO (1) WO2002011192A1 (it)

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JP4308485B2 (ja) * 2002-07-08 2009-08-05 パナソニック株式会社 容量素子の製造方法
US6903394B2 (en) * 2002-11-27 2005-06-07 Micron Technology, Inc. CMOS imager with improved color response
US20040163233A1 (en) * 2003-02-26 2004-08-26 Stefan Gernhardt Methods of forming electrical connections within ferroelectric devices
US7045418B2 (en) * 2003-03-12 2006-05-16 Texas Instruments Incorporated Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor
US20050037521A1 (en) * 2003-08-15 2005-02-17 Uwe Wellhausen Methods and apparatus for processing semiconductor devices by gas annealing
FR2859202B1 (fr) * 2003-08-29 2005-10-14 Commissariat Energie Atomique Compose piegeur de l'hydrogene, procede de fabrication et utilisations
US7071506B2 (en) * 2003-09-05 2006-07-04 Infineon Technologies Ag Device for inhibiting hydrogen damage in ferroelectric capacitor devices
JP4997757B2 (ja) * 2005-12-20 2012-08-08 富士通株式会社 薄膜キャパシタ及びその製造方法、電子装置並びに回路基板
US8093698B2 (en) * 2006-12-05 2012-01-10 Spansion Llc Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device
US7592273B2 (en) * 2007-04-19 2009-09-22 Freescale Semiconductor, Inc. Semiconductor device with hydrogen barrier and method therefor
JP5772052B2 (ja) * 2011-02-23 2015-09-02 セイコーエプソン株式会社 焦電型検出器、焦電型検出装置及び電子機器
FR2984003B1 (fr) * 2011-12-12 2014-01-10 Commissariat Energie Atomique Procede et dispositif de reduction du degazage de dechets trities issus de l'industrie nucleaire
KR101380309B1 (ko) * 2012-05-23 2014-04-02 주식회사 동부하이텍 커패시터 및 그 형성 방법
CN106935506A (zh) * 2015-12-31 2017-07-07 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管的形成方法
US10038092B1 (en) * 2017-05-24 2018-07-31 Sandisk Technologies Llc Three-level ferroelectric memory cell using band alignment engineering
US10622960B2 (en) * 2017-10-17 2020-04-14 Mitsubishi Electric Research Laboratories, Inc. Filters with virtual inductor implemented using negative capacitor
KR102448843B1 (ko) 2017-12-29 2022-09-28 엘지디스플레이 주식회사 유기전계발광 표시장치 및 그 제조방법
US11527702B2 (en) * 2018-07-11 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric device with hydrogen getter
US11322580B2 (en) * 2019-08-05 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Titanium layer as getter layer for hydrogen in a MIM device
CN114271828B (zh) * 2021-12-22 2023-08-29 香港城市大学成都研究院 一种用于脑机接口的可降解高阵列柔性器件及其制备方法

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JP3131982B2 (ja) * 1990-08-21 2001-02-05 セイコーエプソン株式会社 半導体装置、半導体メモリ及び半導体装置の製造方法
EP0605980A3 (en) 1993-01-07 1995-08-02 Ramtron Int Corp Layering process for depositing silicon nitride and silicon oxynitride.
JPH07111318A (ja) * 1993-10-12 1995-04-25 Olympus Optical Co Ltd 強誘電体メモリ
JP2875733B2 (ja) * 1994-02-15 1999-03-31 松下電子工業株式会社 半導体装置の製造方法
US5909043A (en) * 1994-06-02 1999-06-01 Texas Instruments Incorporated Sacrificial oxygen sources to prevent reduction of oxygen containing materials
US5716875A (en) * 1996-03-01 1998-02-10 Motorola, Inc. Method for making a ferroelectric device
US5760433A (en) * 1996-05-31 1998-06-02 Hughes Electronics In situ reactive layers for protection of ferroelectric integrated circuits
JP2924814B2 (ja) 1996-09-26 1999-07-26 日本電気株式会社 半導体装置の製造方法
US5990513A (en) * 1996-10-08 1999-11-23 Ramtron International Corporation Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
JP3120745B2 (ja) * 1997-01-07 2000-12-25 双葉電子工業株式会社 電界放出形表示装置の製造方法
JPH118355A (ja) 1997-06-16 1999-01-12 Nec Corp 強誘電体メモリ
JPH1140761A (ja) 1997-07-23 1999-02-12 Fujitsu Ltd 半導体装置及びその製造方法
JPH1187633A (ja) 1997-09-02 1999-03-30 Fujitsu Ltd 半導体装置の製造方法
JP3542704B2 (ja) 1997-10-24 2004-07-14 シャープ株式会社 半導体メモリ素子
JPH11293089A (ja) 1998-04-15 1999-10-26 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び強誘電体メモリー装置
US6225156B1 (en) * 1998-04-17 2001-05-01 Symetrix Corporation Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same
US6165802A (en) 1998-04-17 2000-12-26 Symetrix Corporation Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation
US6130103A (en) * 1998-04-17 2000-10-10 Symetrix Corporation Method for fabricating ferroelectric integrated circuits
JP3292699B2 (ja) 1998-07-24 2002-06-17 株式会社東芝 半導体装置及びその製造方法
US6512256B1 (en) * 1998-11-20 2003-01-28 Symetrix Corporation Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same
US6225656B1 (en) * 1998-12-01 2001-05-01 Symetrix Corporation Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same
US6066868A (en) * 1999-03-31 2000-05-23 Radiant Technologies, Inc. Ferroelectric based memory devices utilizing hydrogen barriers and getters

Also Published As

Publication number Publication date
CN1444773A (zh) 2003-09-24
IT1318279B1 (it) 2003-07-28
WO2002011192A1 (en) 2002-02-07
US20030136989A1 (en) 2003-07-24
ITMI20001753A0 (it) 2000-07-28
EP1305822A1 (en) 2003-05-02
ITMI20001753A1 (it) 2002-01-28
HK1057646A1 (en) 2004-04-08
JP2004505463A (ja) 2004-02-19
TW516215B (en) 2003-01-01
CN1193404C (zh) 2005-03-16
US6762446B2 (en) 2004-07-13

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