AU2001238335A1 - Semiconductor device for low voltage protection with low capacitance - Google Patents

Semiconductor device for low voltage protection with low capacitance

Info

Publication number
AU2001238335A1
AU2001238335A1 AU2001238335A AU3833501A AU2001238335A1 AU 2001238335 A1 AU2001238335 A1 AU 2001238335A1 AU 2001238335 A AU2001238335 A AU 2001238335A AU 3833501 A AU3833501 A AU 3833501A AU 2001238335 A1 AU2001238335 A1 AU 2001238335A1
Authority
AU
Australia
Prior art keywords
low
semiconductor device
voltage protection
capacitance
low voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001238335A
Inventor
Kelly C. Casey
Elmer L. Turner Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teccor Electronics LP
Original Assignee
Teccor Electronics LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teccor Electronics LP filed Critical Teccor Electronics LP
Publication of AU2001238335A1 publication Critical patent/AU2001238335A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
AU2001238335A 2000-02-15 2001-02-15 Semiconductor device for low voltage protection with low capacitance Abandoned AU2001238335A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09504224 2000-02-15
US09/504,224 US6531717B1 (en) 1999-03-01 2000-02-15 Very low voltage actuated thyristor with centrally-located offset buried region
PCT/US2001/004906 WO2001061759A1 (en) 2000-02-15 2001-02-15 Semiconductor device for low voltage protection with low capacitance

Publications (1)

Publication Number Publication Date
AU2001238335A1 true AU2001238335A1 (en) 2001-08-27

Family

ID=24005366

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001238335A Abandoned AU2001238335A1 (en) 2000-02-15 2001-02-15 Semiconductor device for low voltage protection with low capacitance

Country Status (4)

Country Link
US (3) US6531717B1 (en)
EP (1) EP1192668A4 (en)
AU (1) AU2001238335A1 (en)
WO (1) WO2001061759A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956248B2 (en) * 1999-03-01 2005-10-18 Teccor Electronics, Lp Semiconductor device for low voltage protection with low capacitance
JP2002184952A (en) * 2000-12-15 2002-06-28 Shindengen Electric Mfg Co Ltd Semiconductor device and its manufacturing method
JP3779243B2 (en) 2002-07-31 2006-05-24 富士通株式会社 Semiconductor device and manufacturing method thereof
US6781161B1 (en) 2003-04-09 2004-08-24 Teccor Electronics, Lp Non-gated thyristor device
WO2004105089A2 (en) * 2003-05-15 2004-12-02 Pan Jit Americas, Inc. Low capacitance over-voltage protection thyristor device
US7738568B2 (en) * 2004-06-03 2010-06-15 Silicon Laboratories Inc. Multiplexed RF isolator
US7561400B2 (en) * 2006-12-05 2009-07-14 Illinois Tool Works Inc. Base station protector assembly for surge protection
FR2960097A1 (en) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Bidirectional protection component for use in first-conductivity type semiconductor substrate, has metallization layer covering first-conductivity type implanted zone, and isolated trench traversing epitaxy layer
FR2987172A1 (en) 2012-02-17 2013-08-23 St Microelectronics Sa BIDIRECTIONAL SEMICONDUCTOR DEVICE FOR PROTECTION AGAINST ELECTROSTATIC DISCHARGE, USEABLE ON SILICON ON INSULATION
US10177081B2 (en) * 2017-01-13 2019-01-08 Littlefuse, Inc. Thyristor and thermal switch device and assembly techniques therefor

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US4021837A (en) * 1975-04-21 1977-05-03 Hutson Jearld L Symmetrical semiconductor switch having carrier lifetime degrading structure
US3975664A (en) 1975-07-28 1976-08-17 Reliable Electric Company Line protector for communication circuit
US4074337A (en) 1976-10-27 1978-02-14 Northern Telecom Limited Protector for telecommunication lines
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US4594635A (en) 1984-08-23 1986-06-10 Northern Telecom Limited Overload protector for communication systems
JPS61150617A (en) 1984-12-24 1986-07-09 日本電信電話株式会社 Surge protection circuit
US4939619A (en) 1987-01-26 1990-07-03 Northern Telecom Limited Packaged solid-state surge protector
US4796150A (en) 1987-04-16 1989-01-03 American Telephone And Telegraph Company, At&T Bell Laboratories Telecommunication protector unit with pivotal surge protector
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US4876626A (en) 1988-06-03 1989-10-24 Reliance Comm/Tec Corporation Central office protector module with alarm indicator
US4905119A (en) 1988-06-27 1990-02-27 Teccor Electronics, Inc. Solid state overvoltage protection circuit
US4967256A (en) 1988-07-08 1990-10-30 Texas Instruments Incorporated Overvoltage protector
JPH0287978A (en) 1988-09-24 1990-03-28 Shindengen Electric Mfg Co Ltd Inverter
US4876621A (en) 1988-12-08 1989-10-24 Reliance Comm/Tec Corporation Line protector for a communications circuit
US4907120A (en) 1988-12-08 1990-03-06 Reliance Comm/Tec Corporation Line protector for a communications circuit
US4901188A (en) 1988-12-30 1990-02-13 Reliance Comm/Tec Corporation Line protector with spring
US5031067A (en) 1989-03-31 1991-07-09 Gte Products Corporation Five pin protector module for telephone circuits
US4958254A (en) 1989-03-31 1990-09-18 Gte Products Corp. Five pin protector module for telephone circuits
US5101317A (en) 1989-06-08 1992-03-31 Northern Telecom Limited Overload protector for telecommunications systems
US4944003A (en) 1989-09-28 1990-07-24 Porta Systems Corp. Solid state telephone protector module
US5155649A (en) 1989-10-02 1992-10-13 Northern Telecom Limited Surge protector for telecommunications equipment
JPH0680820B2 (en) * 1989-10-16 1994-10-12 株式会社東芝 Semiconductor device with overvoltage protection function and method of manufacturing the same
US4958253A (en) 1989-10-25 1990-09-18 Reliance Comm/Tec Corporation Line protector for a communications circuit
US5224012A (en) 1990-05-17 1993-06-29 Tii Industries Inc. Solid state station protectors
US5150271A (en) 1990-08-21 1992-09-22 Texas Instruments Incorporated Telecommunication equipment protector
US5438619A (en) 1990-11-20 1995-08-01 Siecor Puerto Rico, Inc. Solid state primary telephone protector
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US6084253A (en) * 1999-03-01 2000-07-04 Teccor Electronics, Lp Low voltage four-layer device with offset buried region

Also Published As

Publication number Publication date
US6531717B1 (en) 2003-03-11
EP1192668A1 (en) 2002-04-03
US20020134991A1 (en) 2002-09-26
EP1192668A4 (en) 2007-11-07
US20030010997A1 (en) 2003-01-16
US6696709B2 (en) 2004-02-24
WO2001061759A1 (en) 2001-08-23

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