AU2001252558A1 - Semiconductor laser device, and method of manufacturing the same - Google Patents
Semiconductor laser device, and method of manufacturing the sameInfo
- Publication number
- AU2001252558A1 AU2001252558A1 AU2001252558A AU5255801A AU2001252558A1 AU 2001252558 A1 AU2001252558 A1 AU 2001252558A1 AU 2001252558 A AU2001252558 A AU 2001252558A AU 5255801 A AU5255801 A AU 5255801A AU 2001252558 A1 AU2001252558 A1 AU 2001252558A1
- Authority
- AU
- Australia
- Prior art keywords
- active layer
- waveguide region
- region
- light
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000172797 | 2000-06-08 | ||
JP2000-172797 | 2000-06-08 | ||
JP2001-116197 | 2001-04-13 | ||
JP2001116197 | 2001-04-13 | ||
PCT/JP2001/003548 WO2001095446A1 (fr) | 2000-06-08 | 2001-04-25 | Dispositif de laser a semi-conducteur et son procede de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001252558A1 true AU2001252558A1 (en) | 2001-12-17 |
Family
ID=26593596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001252558A Abandoned AU2001252558A1 (en) | 2000-06-08 | 2001-04-25 | Semiconductor laser device, and method of manufacturing the same |
Country Status (11)
Country | Link |
---|---|
US (3) | US6925101B2 (ko) |
EP (1) | EP1306944B1 (ko) |
KR (2) | KR100763829B1 (ko) |
CN (1) | CN1251372C (ko) |
AT (1) | ATE366469T1 (ko) |
AU (1) | AU2001252558A1 (ko) |
CA (1) | CA2411445C (ko) |
DE (1) | DE60129227T2 (ko) |
MY (1) | MY135464A (ko) |
TW (1) | TW490898B (ko) |
WO (1) | WO2001095446A1 (ko) |
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JP3878868B2 (ja) | 2002-03-01 | 2007-02-07 | シャープ株式会社 | GaN系レーザ素子 |
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US7076130B2 (en) * | 2002-09-11 | 2006-07-11 | Adc Telecommunications, Inc. | Semiconductor optical device having asymmetric ridge waveguide and method of making same |
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US20050116243A1 (en) * | 2003-12-01 | 2005-06-02 | Atsunori Mochida | Semiconductor laser device and its manufacturing method |
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JP2005268581A (ja) * | 2004-03-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
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US7352788B2 (en) * | 2005-08-15 | 2008-04-01 | Avago Technologies Ecbu Ip (Singapore) Pte, Ltd. | Nitride semiconductor vertical cavity surface emitting laser |
KR100809209B1 (ko) * | 2006-04-25 | 2008-02-29 | 삼성전기주식회사 | 비극성 m면 질화물 반도체 제조방법 |
US20070280309A1 (en) * | 2006-05-23 | 2007-12-06 | Ansheng Liu | Optical waveguide with single sided coplanar contact optical phase modulator |
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-
2001
- 2001-04-25 KR KR1020067005150A patent/KR100763829B1/ko active IP Right Grant
- 2001-04-25 AT AT01925886T patent/ATE366469T1/de not_active IP Right Cessation
- 2001-04-25 WO PCT/JP2001/003548 patent/WO2001095446A1/ja active IP Right Grant
- 2001-04-25 CA CA2411445A patent/CA2411445C/en not_active Expired - Lifetime
- 2001-04-25 EP EP01925886A patent/EP1306944B1/en not_active Expired - Lifetime
- 2001-04-25 US US10/297,332 patent/US6925101B2/en not_active Expired - Lifetime
- 2001-04-25 KR KR1020027016670A patent/KR100763827B1/ko active IP Right Grant
- 2001-04-25 DE DE60129227T patent/DE60129227T2/de not_active Expired - Lifetime
- 2001-04-25 CN CNB018108644A patent/CN1251372C/zh not_active Expired - Fee Related
- 2001-04-25 AU AU2001252558A patent/AU2001252558A1/en not_active Abandoned
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- 2001-06-08 TW TW090113969A patent/TW490898B/zh not_active IP Right Cessation
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EP1306944B1 (en) | 2007-07-04 |
ATE366469T1 (de) | 2007-07-15 |
US20030128729A1 (en) | 2003-07-10 |
KR100763829B1 (ko) | 2007-10-05 |
US20050170542A1 (en) | 2005-08-04 |
CN1434996A (zh) | 2003-08-06 |
CA2411445A1 (en) | 2002-12-04 |
CN1251372C (zh) | 2006-04-12 |
KR20030007907A (ko) | 2003-01-23 |
EP1306944A4 (en) | 2005-11-30 |
US7470555B2 (en) | 2008-12-30 |
US7709281B2 (en) | 2010-05-04 |
DE60129227T2 (de) | 2008-03-13 |
US20090129418A1 (en) | 2009-05-21 |
TW490898B (en) | 2002-06-11 |
EP1306944A1 (en) | 2003-05-02 |
DE60129227D1 (de) | 2007-08-16 |
KR100763827B1 (ko) | 2007-10-05 |
MY135464A (en) | 2008-04-30 |
CA2411445C (en) | 2011-08-16 |
KR20060036488A (ko) | 2006-04-28 |
US6925101B2 (en) | 2005-08-02 |
WO2001095446A1 (fr) | 2001-12-13 |
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