AU2001251415A1 - Method and apparatus for manufacturing an interconnect structure - Google Patents

Method and apparatus for manufacturing an interconnect structure

Info

Publication number
AU2001251415A1
AU2001251415A1 AU2001251415A AU5141501A AU2001251415A1 AU 2001251415 A1 AU2001251415 A1 AU 2001251415A1 AU 2001251415 A AU2001251415 A AU 2001251415A AU 5141501 A AU5141501 A AU 5141501A AU 2001251415 A1 AU2001251415 A1 AU 2001251415A1
Authority
AU
Australia
Prior art keywords
manufacturing
interconnect structure
interconnect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001251415A
Other languages
English (en)
Inventor
Kartik Ananthanarayanan
George F. Carney
Rina Chowdhury
Rebecca G. Cole
Deborah A. Hagen
Addi B. Mistry
Scott K. Pozder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001251415A1 publication Critical patent/AU2001251415A1/en
Abandoned legal-status Critical Current

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    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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    • H01L2924/013—Alloys
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    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
AU2001251415A 2000-04-18 2001-04-06 Method and apparatus for manufacturing an interconnect structure Abandoned AU2001251415A1 (en)

Applications Claiming Priority (3)

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US09551312 2000-04-18
US09/551,312 US6429531B1 (en) 2000-04-18 2000-04-18 Method and apparatus for manufacturing an interconnect structure
PCT/US2001/011319 WO2001080303A2 (en) 2000-04-18 2001-04-06 Method and apparatus for manufacturing an interconnect structure

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AU2001251415A1 true AU2001251415A1 (en) 2001-10-30

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JP (1) JP5064632B2 (ja)
KR (1) KR100818902B1 (ja)
CN (1) CN1291468C (ja)
AU (1) AU2001251415A1 (ja)
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Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6642136B1 (en) * 2001-09-17 2003-11-04 Megic Corporation Method of making a low fabrication cost, high performance, high reliability chip scale package
US8021976B2 (en) 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
US6815324B2 (en) * 2001-02-15 2004-11-09 Megic Corporation Reliable metal bumps on top of I/O pads after removal of test probe marks
US7902679B2 (en) * 2001-03-05 2011-03-08 Megica Corporation Structure and manufacturing method of a chip scale package with low fabrication cost, fine pitch and high reliability solder bump
TWI313507B (en) * 2002-10-25 2009-08-11 Megica Corporatio Method for assembling chips
US6818545B2 (en) * 2001-03-05 2004-11-16 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
US7099293B2 (en) * 2002-05-01 2006-08-29 Stmicroelectronics, Inc. Buffer-less de-skewing for symbol combination in a CDMA demodulator
TWI245402B (en) 2002-01-07 2005-12-11 Megic Corp Rod soldering structure and manufacturing process thereof
US6614117B1 (en) * 2002-06-04 2003-09-02 Skyworks Solutions, Inc. Method for metallization of a semiconductor substrate and related structure
KR100476301B1 (ko) * 2002-07-27 2005-03-15 한국과학기술원 전기도금법에 의한 반도체 소자의 플립칩 접속용 ｕｂｍ의형성방법
US6878633B2 (en) * 2002-12-23 2005-04-12 Freescale Semiconductor, Inc. Flip-chip structure and method for high quality inductors and transformers
JP2004247530A (ja) * 2003-02-14 2004-09-02 Renesas Technology Corp 半導体装置及びその製造方法
US7470997B2 (en) * 2003-07-23 2008-12-30 Megica Corporation Wirebond pad for semiconductor chip or wafer
US7394161B2 (en) * 2003-12-08 2008-07-01 Megica Corporation Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto
US8067837B2 (en) * 2004-09-20 2011-11-29 Megica Corporation Metallization structure over passivation layer for IC chip
US8294279B2 (en) 2005-01-25 2012-10-23 Megica Corporation Chip package with dam bar restricting flow of underfill
JP4219951B2 (ja) * 2006-10-25 2009-02-04 新光電気工業株式会社 はんだボール搭載方法及びはんだボール搭載基板の製造方法
JP4682964B2 (ja) * 2006-10-30 2011-05-11 株式会社デンソー 半導体装置およびその製造方法
US20120248599A1 (en) * 2011-03-28 2012-10-04 Ring Matthew A Reliable solder bump coupling within a chip scale package
US9324667B2 (en) 2012-01-13 2016-04-26 Freescale Semiconductor, Inc. Semiconductor devices with compliant interconnects
KR102315276B1 (ko) 2014-10-06 2021-10-20 삼성전자 주식회사 집적회로 소자 및 그 제조 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5071518A (en) 1989-10-24 1991-12-10 Microelectronics And Computer Technology Corporation Method of making an electrical multilayer interconnect
JP3141364B2 (ja) * 1992-05-06 2001-03-05 住友電気工業株式会社 半導体チップ
KR960011855B1 (ko) * 1992-10-08 1996-09-03 삼성전자 주식회사 반도체장치의 범프 형성방법
US5466635A (en) 1994-06-02 1995-11-14 Lsi Logic Corporation Process for making an interconnect bump for flip-chip integrated circuit including integral standoff and hourglass shaped solder coating
US5447264A (en) * 1994-07-01 1995-09-05 Mcnc Recessed via apparatus for testing, burn-in, and/or programming of integrated circuit chips, and for placing solder bumps thereon
JPH0837190A (ja) * 1994-07-22 1996-02-06 Nec Corp 半導体装置
JP2701751B2 (ja) * 1994-08-30 1998-01-21 日本電気株式会社 半導体装置の製造方法
EP0751566A3 (en) * 1995-06-30 1997-02-26 Ibm Metal thin film barrier for electrical connections
DE19616373A1 (de) 1996-04-24 1997-08-14 Fraunhofer Ges Forschung Herstellung galvanisch abgeformter Kontakthöcker
JPH1092924A (ja) * 1996-09-18 1998-04-10 Toshiba Corp 半導体装置及びその製造方法
JPH10209154A (ja) * 1997-01-21 1998-08-07 Oki Electric Ind Co Ltd 半導体装置
US6441487B2 (en) * 1997-10-20 2002-08-27 Flip Chip Technologies, L.L.C. Chip scale package using large ductile solder balls
US6251528B1 (en) * 1998-01-09 2001-06-26 International Business Machines Corporation Method to plate C4 to copper stud
US5977632A (en) * 1998-02-02 1999-11-02 Motorola, Inc. Flip chip bump structure and method of making
US6075290A (en) 1998-02-26 2000-06-13 National Semiconductor Corporation Surface mount die: wafer level chip-scale package and process for making the same
US5943597A (en) * 1998-06-15 1999-08-24 Motorola, Inc. Bumped semiconductor device having a trench for stress relief
JP2000091369A (ja) 1998-09-11 2000-03-31 Sony Corp 半導体装置及びその製造方法
US6218732B1 (en) * 1998-09-15 2001-04-17 Texas Instruments Incorporated Copper bond pad process
JP3577419B2 (ja) * 1998-12-17 2004-10-13 新光電気工業株式会社 半導体装置およびその製造方法
US6180505B1 (en) 1999-01-07 2001-01-30 International Business Machines Corporation Process for forming a copper-containing film
JP2000228006A (ja) * 1999-02-05 2000-08-15 Alps Electric Co Ltd ボンディングパットおよびバンプを用いた接合体、および磁気ヘッド装置

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WO2001080303A2 (en) 2001-10-25
CN1291468C (zh) 2006-12-20
KR20020091210A (ko) 2002-12-05
WO2001080303A3 (en) 2002-02-21
KR100818902B1 (ko) 2008-04-04
JP2004501504A (ja) 2004-01-15
US6429531B1 (en) 2002-08-06
JP5064632B2 (ja) 2012-10-31
TW490775B (en) 2002-06-11
CN1473359A (zh) 2004-02-04

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