AU2001237661A1 - Lead zirconate titanate dielectric thin film composites on metallic foils - Google Patents

Lead zirconate titanate dielectric thin film composites on metallic foils

Info

Publication number
AU2001237661A1
AU2001237661A1 AU2001237661A AU3766101A AU2001237661A1 AU 2001237661 A1 AU2001237661 A1 AU 2001237661A1 AU 2001237661 A AU2001237661 A AU 2001237661A AU 3766101 A AU3766101 A AU 3766101A AU 2001237661 A1 AU2001237661 A1 AU 2001237661A1
Authority
AU
Australia
Prior art keywords
thin film
lead zirconate
zirconate titanate
dielectric thin
metallic foils
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001237661A
Other languages
English (en)
Inventor
Mark Farrell
Harry Eugen Ruda
Ben G. Yacobi
Qin Zou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energenius Inc
Original Assignee
Energenius Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energenius Inc filed Critical Energenius Inc
Publication of AU2001237661A1 publication Critical patent/AU2001237661A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
    • H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Insulating Materials (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Memories (AREA)
AU2001237661A 2000-03-04 2001-03-01 Lead zirconate titanate dielectric thin film composites on metallic foils Abandoned AU2001237661A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/518,532 US6623865B1 (en) 2000-03-04 2000-03-04 Lead zirconate titanate dielectric thin film composites on metallic foils
US09518532 2000-03-04
PCT/IB2001/000290 WO2001067465A2 (en) 2000-03-04 2001-03-01 Lead zirconate titanate dielectric thin film composites on metallic foils

Publications (1)

Publication Number Publication Date
AU2001237661A1 true AU2001237661A1 (en) 2001-09-17

Family

ID=24064339

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001237661A Abandoned AU2001237661A1 (en) 2000-03-04 2001-03-01 Lead zirconate titanate dielectric thin film composites on metallic foils

Country Status (9)

Country Link
US (1) US6623865B1 (zh)
EP (1) EP1282901B1 (zh)
JP (1) JP2003526880A (zh)
KR (1) KR20030076927A (zh)
CN (1) CN1419700A (zh)
AU (1) AU2001237661A1 (zh)
DE (1) DE60124529T2 (zh)
TW (1) TW574422B (zh)
WO (1) WO2001067465A2 (zh)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1139394A3 (en) * 2000-03-30 2006-02-15 International Business Machines Corporation Method and device for electric field assisted anneal
US6541137B1 (en) 2000-07-31 2003-04-01 Motorola, Inc. Multi-layer conductor-dielectric oxide structure
US6819540B2 (en) 2001-11-26 2004-11-16 Shipley Company, L.L.C. Dielectric structure
US6661642B2 (en) 2001-11-26 2003-12-09 Shipley Company, L.L.C. Dielectric structure
TWI251536B (en) * 2003-03-20 2006-03-21 Hitachi Chemical Co Ltd Material for multilayer printed circuit board with built-in capacitor, substrate for multilayer printed circuit board, multilayer printed circuit board and methods for producing those
US7029971B2 (en) * 2003-07-17 2006-04-18 E. I. Du Pont De Nemours And Company Thin film dielectrics for capacitors and methods of making thereof
US6872468B1 (en) 2003-10-09 2005-03-29 Motorola, Inc. Peelable circuit board foil
US7229662B2 (en) 2003-12-16 2007-06-12 National University Of Singapore Heterolayered ferroelectric thin films and methods of forming same
US7193838B2 (en) * 2003-12-23 2007-03-20 Motorola, Inc. Printed circuit dielectric foil and embedded capacitors
JP4506951B2 (ja) * 2004-04-23 2010-07-21 セイコーエプソン株式会社 Ｍｆｓ型電界効果トランジスタ、強誘電体メモリならびに半導体装置
US20060000542A1 (en) * 2004-06-30 2006-01-05 Yongki Min Metal oxide ceramic thin film on base metal electrode
JP3764160B2 (ja) * 2004-09-10 2006-04-05 三井金属鉱業株式会社 キャパシタ層形成材及びキャパシタ層形成材を用いて得られる内蔵キャパシタ回路を備えるプリント配線板。
US7011726B1 (en) * 2004-09-27 2006-03-14 Intel Corporation Method of fabricating thin dielectric film and thin film capacitor including the dielectric film
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
US20060099803A1 (en) * 2004-10-26 2006-05-11 Yongki Min Thin film capacitor
US20060091495A1 (en) * 2004-10-29 2006-05-04 Palanduz Cengiz A Ceramic thin film on base metal electrode
US7629269B2 (en) 2005-03-31 2009-12-08 Intel Corporation High-k thin film grain size control
US7375412B1 (en) 2005-03-31 2008-05-20 Intel Corporation iTFC with optimized C(T)
US20060220177A1 (en) * 2005-03-31 2006-10-05 Palanduz Cengiz A Reduced porosity high-k thin film mixed grains for thin film capacitor applications
US20060287188A1 (en) 2005-06-21 2006-12-21 Borland William J Manganese doped barium titanate thin film compositions, capacitors, and methods of making thereof
US7795663B2 (en) 2005-06-21 2010-09-14 E. I. Du Pont De Nemours And Company Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
US7561406B2 (en) 2006-03-30 2009-07-14 Tdk Corporation Nickel substrate thin film capacitor and method of manufacturing nickel substrate thin film capacitor
JP4983102B2 (ja) * 2006-06-06 2012-07-25 Ｔｄｋ株式会社 誘電体素子
US7773364B2 (en) 2006-07-26 2010-08-10 Tdk Corporation Method of manufacturing capacitor
US20080118731A1 (en) * 2006-11-16 2008-05-22 Micron Technology, Inc. Method of forming a structure having a high dielectric constant, a structure having a high dielectric constant, a capacitor including the structure, a method of forming the capacitor
US8974856B2 (en) 2009-06-02 2015-03-10 Uchicago Argonne, Llc Method for fabrication of ceramic dielectric films on copper foils
JP2011176028A (ja) * 2010-02-23 2011-09-08 Utec:Kk 加圧式ランプアニール装置、薄膜の製造方法及び加圧式ランプアニール装置の使用方法
DE102012105036A1 (de) * 2012-06-12 2013-12-12 Pyreos Ltd. Verfahren zum Herstellen eines Mikrosystems
CN102863220B (zh) * 2012-09-18 2014-02-19 天津大学 低温共烧制备银电极的pzt基压电陶瓷厚膜材料的方法
BR112018068168A2 (pt) * 2016-03-16 2019-02-12 Xaar Technology Limited ?elemento de filme fino piezoelétrico e método para a fabricação do dito elemento?
US9842695B2 (en) * 2016-05-11 2017-12-12 Delphi Technologies, Inc. PLZT capacitor and method to increase the dielectric constant
JP6965670B2 (ja) * 2017-09-29 2021-11-10 Tdk株式会社 薄膜キャパシタ
DE102020115315B4 (de) 2020-06-09 2022-05-05 Tdk Electronics Ag Piezoelektrische Baugruppe und Prozess zum Bilden einer piezoelektrischen Baugruppe
DE102022132815A1 (de) 2022-12-09 2024-06-20 Tdk Electronics Ag Substrat für einen keramischen Dünnfilm und Dünnfilmvorrichtung

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283228A (en) 1979-12-05 1981-08-11 University Of Illinois Foundation Low temperature densification of PZT ceramics
JP2532381B2 (ja) 1986-03-04 1996-09-11 松下電器産業株式会社 強誘電体薄膜素子及びその製造方法
US4946710A (en) 1987-06-02 1990-08-07 National Semiconductor Corporation Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films
US5112433A (en) 1988-12-09 1992-05-12 Battelle Memorial Institute Process for producing sub-micron ceramic powders of perovskite compounds with controlled stoichiometry and particle size
US5965219A (en) 1988-12-27 1999-10-12 Symetrix Corporation Misted deposition method with applied UV radiation
US5138520A (en) 1988-12-27 1992-08-11 Symetrix Corporation Methods and apparatus for material deposition
US5456945A (en) 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
US5198269A (en) 1989-04-24 1993-03-30 Battelle Memorial Institute Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
JP2891304B2 (ja) 1990-11-16 1999-05-17 三菱マテリアル株式会社 超高純度強誘電体薄膜
US5265315A (en) 1990-11-20 1993-11-30 Spectra, Inc. Method of making a thin-film transducer ink jet head
US5173354A (en) 1990-12-13 1992-12-22 Cornell Research Foundation, Inc. Non-beading, thin-film, metal-coated ceramic substrate
JPH04259380A (ja) 1991-02-13 1992-09-14 Mitsubishi Materials Corp Ｐｚｔ強誘電体薄膜の結晶配向性制御方法
US5962085A (en) 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow
US5188902A (en) 1991-05-30 1993-02-23 Northern Illinois University Production of PT/PZT/PLZI thin films, powders, and laser `direct write` patterns
US5271955A (en) 1992-04-06 1993-12-21 Motorola, Inc. Method for making a semiconductor device having an anhydrous ferroelectric thin film
WO1993021637A1 (en) 1992-04-13 1993-10-28 Ceram, Inc. Multilayer electrodes for ferroelectric devices
EP0647525B1 (en) 1992-07-03 1998-09-30 Citizen Watch Co. Ltd. Ink jet head
US5308807A (en) 1992-07-15 1994-05-03 Nalco Chemical Company Production of lead zirconate titanates using zirconia sol as a reactant
JP3033067B2 (ja) 1992-10-05 2000-04-17 富士ゼロックス株式会社 多層強誘電体導膜の製造方法
DE4314911C1 (de) 1993-05-05 1995-01-26 Siemens Ag Verfahren zur Herstellung einer PZT-Keramik
US6013334A (en) 1993-05-27 2000-01-11 Rohm Co. Ltd. Method for forming a thin film of a complex compound
US5384294A (en) 1993-11-30 1995-01-24 The United States Of America As Represented By The Secretary Of The Air Force Sol-gel derived lead oxide containing ceramics
US5462647A (en) 1994-09-09 1995-10-31 Midwest Research Institute Preparation of lead-zirconium-titanium film and powder by electrodeposition
US5541807A (en) 1995-03-17 1996-07-30 Evans, Jr.; Joseph T. Ferroelectric based capacitor for use in memory systems and method for fabricating the same
DE19521187C2 (de) 1995-06-10 1997-08-07 Fraunhofer Ges Forschung Verwendung eines ferroelektrischen keramischen Werkstoffs für die Informationsspeicherung bei elektrostatischen Druckverfahren
JP2999703B2 (ja) 1995-12-20 2000-01-17 沖電気工業株式会社 強誘電体薄膜、その形成方法、薄膜形成用塗布液
JP2001503197A (ja) 1996-08-12 2001-03-06 エナージーニアス，インコーポレイテッド 半導体スーパーキャパシタシステム、その製法、及び該製法による製品
US5935485A (en) 1996-10-31 1999-08-10 Kabushiki Kaisha Toyota Chuo Kenkyusho Piezoelectric material and piezoelectric element
JPH10270766A (ja) * 1997-03-25 1998-10-09 Osaka Gas Co Ltd 強誘電体薄膜素子、圧電素子及びその製造方法
US6433993B1 (en) 1998-11-23 2002-08-13 Microcoating Technologies, Inc. Formation of thin film capacitors
US6207522B1 (en) 1998-11-23 2001-03-27 Microcoating Technologies Formation of thin film capacitors
US6270835B1 (en) 1999-10-07 2001-08-07 Microcoating Technologies, Inc. Formation of this film capacitors
US6541137B1 (en) 2000-07-31 2003-04-01 Motorola, Inc. Multi-layer conductor-dielectric oxide structure

Also Published As

Publication number Publication date
EP1282901A2 (en) 2003-02-12
TW574422B (en) 2004-02-01
KR20030076927A (ko) 2003-09-29
DE60124529D1 (de) 2006-12-28
WO2001067465A2 (en) 2001-09-13
EP1282901B1 (en) 2006-11-15
JP2003526880A (ja) 2003-09-09
DE60124529T2 (de) 2007-10-11
CN1419700A (zh) 2003-05-21
WO2001067465A3 (en) 2002-02-28
US6623865B1 (en) 2003-09-23

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