ATE545696T1 - Verbesserte alkali-chemie zur nach-cmp-reinigung - Google Patents
Verbesserte alkali-chemie zur nach-cmp-reinigungInfo
- Publication number
- ATE545696T1 ATE545696T1 AT08305388T AT08305388T ATE545696T1 AT E545696 T1 ATE545696 T1 AT E545696T1 AT 08305388 T AT08305388 T AT 08305388T AT 08305388 T AT08305388 T AT 08305388T AT E545696 T1 ATE545696 T1 AT E545696T1
- Authority
- AT
- Austria
- Prior art keywords
- metal
- wafer
- post
- cmp
- cleaning
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
- H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2093—Esters; Carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3472—Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/266—Esters or carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/831,161 US7498295B2 (en) | 2004-02-12 | 2007-07-31 | Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE545696T1 true ATE545696T1 (de) | 2012-03-15 |
Family
ID=39831894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08305388T ATE545696T1 (de) | 2007-07-31 | 2008-07-08 | Verbesserte alkali-chemie zur nach-cmp-reinigung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7498295B2 (de) |
| EP (1) | EP2028262B1 (de) |
| JP (1) | JP2009055020A (de) |
| KR (1) | KR20090013117A (de) |
| CN (1) | CN101386811A (de) |
| AT (1) | ATE545696T1 (de) |
| SG (1) | SG149784A1 (de) |
| TW (1) | TW200918663A (de) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2721514B2 (ja) * | 1988-08-11 | 1998-03-04 | 松下電器産業株式会社 | 密閉型鉛蓄電池の製造方法 |
| US7087564B2 (en) * | 2004-03-05 | 2006-08-08 | Air Liquide America, L.P. | Acidic chemistry for post-CMP cleaning |
| US20070225186A1 (en) * | 2006-03-27 | 2007-09-27 | Matthew Fisher | Alkaline solutions for post CMP cleaning processes |
| US8685909B2 (en) * | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| US7799139B2 (en) * | 2007-03-28 | 2010-09-21 | Intel Corporation | Chemistry for removal of photo resist, organic sacrificial fill material and etch polymer |
| US20100062164A1 (en) | 2008-09-08 | 2010-03-11 | Lam Research | Methods and Solutions for Preventing the Formation of Metal Particulate Defect Matter Upon a Substrate After a Plating Process |
| EP2449076B1 (de) * | 2009-06-30 | 2016-09-21 | Basf Se | Wässrige akalische reinigungszusammensetzungen und verfahren zu ihrer verwendung |
| US8765653B2 (en) * | 2009-07-07 | 2014-07-01 | Air Products And Chemicals, Inc. | Formulations and method for post-CMP cleaning |
| TWI447224B (zh) * | 2009-12-25 | 2014-08-01 | Uwiz Technology Co Ltd | 使用於半導體晶圓製造之清洗組成物 |
| MY163493A (en) * | 2010-07-19 | 2017-09-15 | Basf Se | Aqueous alkaline cleaning compositions and method of their use |
| CN101906638B (zh) * | 2010-07-21 | 2012-09-19 | 河北工业大学 | 硅衬底材料抛光后表面清洗方法 |
| CN101972755B (zh) * | 2010-07-21 | 2012-02-01 | 河北工业大学 | Ulsi铜材料抛光后表面清洗方法 |
| US8921295B2 (en) | 2010-07-23 | 2014-12-30 | American Sterilizer Company | Biodegradable concentrated neutral detergent composition |
| CN102623327B (zh) * | 2011-01-31 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 一种化学机械研磨方法 |
| JP6123334B2 (ja) * | 2012-02-17 | 2017-05-10 | 三菱化学株式会社 | 半導体デバイス用洗浄液及び半導体デバイス用基板の洗浄方法 |
| TWI572711B (zh) | 2012-10-16 | 2017-03-01 | 盟智科技股份有限公司 | 半導體製程用的清洗組成物及清洗方法 |
| US8647445B1 (en) * | 2012-11-06 | 2014-02-11 | International Business Machines Corporation | Process for cleaning semiconductor devices and/or tooling during manufacturing thereof |
| US9058976B2 (en) | 2012-11-06 | 2015-06-16 | International Business Machines Corporation | Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof |
| JP6414072B2 (ja) * | 2013-11-08 | 2018-12-05 | 富士フイルム和光純薬株式会社 | 半導体基板用洗浄剤および半導体基板表面の処理方法 |
| JP6228505B2 (ja) | 2014-04-11 | 2017-11-08 | 東芝メモリ株式会社 | 基板処理方法 |
| JP2015203047A (ja) * | 2014-04-11 | 2015-11-16 | 三菱化学株式会社 | 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法 |
| TWI636131B (zh) | 2014-05-20 | 2018-09-21 | 日商Jsr股份有限公司 | 清洗用組成物及清洗方法 |
| CN104357861B (zh) * | 2014-10-31 | 2016-06-22 | 陕西师范大学 | 一种鎏金层铜锈凝胶除锈剂 |
| KR102326028B1 (ko) | 2015-01-26 | 2021-11-16 | 삼성디스플레이 주식회사 | 반도체 및 디스플레이 제조공정용 세정제 조성물 |
| US10319605B2 (en) | 2016-05-10 | 2019-06-11 | Jsr Corporation | Semiconductor treatment composition and treatment method |
| JP6112330B1 (ja) | 2016-05-10 | 2017-04-12 | Jsr株式会社 | 半導体洗浄用組成物および洗浄方法 |
| JP6112329B1 (ja) | 2016-05-10 | 2017-04-12 | Jsr株式会社 | 半導体洗浄用組成物および洗浄方法 |
| KR102626655B1 (ko) | 2017-02-08 | 2024-01-17 | 제이에스알 가부시끼가이샤 | 반도체 처리용 조성물 및 처리 방법 |
| CN109863580A (zh) | 2017-08-03 | 2019-06-07 | Jsr株式会社 | 半导体处理用组合物及处理方法 |
| PL3844142T3 (pl) | 2018-08-30 | 2024-12-02 | Huntsman Petrochemical Llc | Czwartorzędowe wodorotlenki amoniowe poliamin |
| KR20210107656A (ko) * | 2018-12-18 | 2021-09-01 | 가부시키가이샤 도쿠야마 | 실리콘 에칭액 |
| CN110484387A (zh) * | 2019-09-12 | 2019-11-22 | 河北工业大学 | 一种碱性集成电路布线抛光后低k介质清洗剂及其清洗方法 |
| CN110484388A (zh) * | 2019-09-12 | 2019-11-22 | 河北工业大学 | 一种适用于集成电路制程中低k介质材料清洗剂及其清洗方法 |
| JP7498427B2 (ja) * | 2020-03-31 | 2024-06-12 | 日産化学株式会社 | 洗浄剤組成物及び加工された半導体基板の製造方法 |
| WO2021230127A1 (ja) * | 2020-05-12 | 2021-11-18 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | 洗浄液、半導体基板の洗浄方法 |
| CN112175756A (zh) * | 2020-11-05 | 2021-01-05 | 河北工业大学 | 用于去除多层铜互连阻挡层cmp后表面残留物的清洗液 |
| CN113186543B (zh) * | 2021-04-27 | 2023-03-14 | 上海新阳半导体材料股份有限公司 | 一种化学机械抛光后清洗液及其制备方法 |
| CN114859677B (zh) * | 2022-04-01 | 2025-09-26 | 晶瑞(湖北)微电子材料有限公司 | 一种四甲基氢氧化铵显影液及其制备方法和应用 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5563119A (en) * | 1995-01-26 | 1996-10-08 | Ashland Inc. | Stripping compositions containing alkanolamine compounds |
| US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| DE69941088D1 (de) * | 1998-05-18 | 2009-08-20 | Mallinckrodt Baker Inc | Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate |
| TW500831B (en) * | 1999-01-20 | 2002-09-01 | Sumitomo Chemical Co | Metal-corrosion inhibitor and cleaning liquid |
| US6194366B1 (en) * | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6492308B1 (en) | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6475966B1 (en) | 2000-02-25 | 2002-11-05 | Shipley Company, L.L.C. | Plasma etching residue removal |
| US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| US6635118B2 (en) * | 2001-01-17 | 2003-10-21 | International Business Machines Corporation | Aqueous cleaning of polymer apply equipment |
| JP4945857B2 (ja) | 2001-06-13 | 2012-06-06 | Jsr株式会社 | 研磨パッド洗浄用組成物及び研磨パッド洗浄方法 |
| MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| KR101056544B1 (ko) * | 2003-08-19 | 2011-08-11 | 아반토르 퍼포먼스 머티리얼스, 인크. | 마이크로전자 기판용 박리 및 세정 조성물 |
| US7435712B2 (en) * | 2004-02-12 | 2008-10-14 | Air Liquide America, L.P. | Alkaline chemistry for post-CMP cleaning |
| US20050205835A1 (en) * | 2004-03-19 | 2005-09-22 | Tamboli Dnyanesh C | Alkaline post-chemical mechanical planarization cleaning compositions |
| US20060094612A1 (en) * | 2004-11-04 | 2006-05-04 | Mayumi Kimura | Post etch cleaning composition for use with substrates having aluminum |
| US20060148666A1 (en) * | 2004-12-30 | 2006-07-06 | Advanced Technology Materials Inc. | Aqueous cleaner with low metal etch rate |
| US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
| US7365045B2 (en) * | 2005-03-30 | 2008-04-29 | Advanced Tehnology Materials, Inc. | Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide |
| US20070225186A1 (en) * | 2006-03-27 | 2007-09-27 | Matthew Fisher | Alkaline solutions for post CMP cleaning processes |
-
2007
- 2007-07-31 US US11/831,161 patent/US7498295B2/en not_active Expired - Fee Related
-
2008
- 2008-07-08 EP EP08305388A patent/EP2028262B1/de active Active
- 2008-07-08 AT AT08305388T patent/ATE545696T1/de active
- 2008-07-22 TW TW097127737A patent/TW200918663A/zh unknown
- 2008-07-24 SG SG200805472-8A patent/SG149784A1/en unknown
- 2008-07-30 KR KR1020080074710A patent/KR20090013117A/ko not_active Withdrawn
- 2008-07-30 JP JP2008196745A patent/JP2009055020A/ja active Pending
- 2008-07-31 CN CNA2008101451332A patent/CN101386811A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009055020A (ja) | 2009-03-12 |
| CN101386811A (zh) | 2009-03-18 |
| EP2028262B1 (de) | 2012-02-15 |
| SG149784A1 (en) | 2009-02-27 |
| EP2028262A2 (de) | 2009-02-25 |
| US7498295B2 (en) | 2009-03-03 |
| EP2028262A3 (de) | 2009-04-01 |
| TW200918663A (en) | 2009-05-01 |
| US20080047592A1 (en) | 2008-02-28 |
| KR20090013117A (ko) | 2009-02-04 |
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