ATE545696T1 - Verbesserte alkali-chemie zur nach-cmp-reinigung - Google Patents

Verbesserte alkali-chemie zur nach-cmp-reinigung

Info

Publication number
ATE545696T1
ATE545696T1 AT08305388T AT08305388T ATE545696T1 AT E545696 T1 ATE545696 T1 AT E545696T1 AT 08305388 T AT08305388 T AT 08305388T AT 08305388 T AT08305388 T AT 08305388T AT E545696 T1 ATE545696 T1 AT E545696T1
Authority
AT
Austria
Prior art keywords
metal
wafer
post
cmp
cleaning
Prior art date
Application number
AT08305388T
Other languages
English (en)
Inventor
Matthew L Fisher
Ashutosh M Misra
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Application granted granted Critical
Publication of ATE545696T1 publication Critical patent/ATE545696T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2093—Esters; Carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3472—Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT08305388T 2007-07-31 2008-07-08 Verbesserte alkali-chemie zur nach-cmp-reinigung ATE545696T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/831,161 US7498295B2 (en) 2004-02-12 2007-07-31 Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide

Publications (1)

Publication Number Publication Date
ATE545696T1 true ATE545696T1 (de) 2012-03-15

Family

ID=39831894

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08305388T ATE545696T1 (de) 2007-07-31 2008-07-08 Verbesserte alkali-chemie zur nach-cmp-reinigung

Country Status (8)

Country Link
US (1) US7498295B2 (de)
EP (1) EP2028262B1 (de)
JP (1) JP2009055020A (de)
KR (1) KR20090013117A (de)
CN (1) CN101386811A (de)
AT (1) ATE545696T1 (de)
SG (1) SG149784A1 (de)
TW (1) TW200918663A (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721514B2 (ja) * 1988-08-11 1998-03-04 松下電器産業株式会社 密閉型鉛蓄電池の製造方法
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US8685909B2 (en) * 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US7799139B2 (en) * 2007-03-28 2010-09-21 Intel Corporation Chemistry for removal of photo resist, organic sacrificial fill material and etch polymer
US20100062164A1 (en) 2008-09-08 2010-03-11 Lam Research Methods and Solutions for Preventing the Formation of Metal Particulate Defect Matter Upon a Substrate After a Plating Process
WO2011000758A1 (en) * 2009-06-30 2011-01-06 Basf Se Aqueous alkaline cleaning compositions and methods of their use
US8765653B2 (en) * 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
TWI447224B (zh) * 2009-12-25 2014-08-01 Uwiz Technology Co Ltd 使用於半導體晶圓製造之清洗組成物
MY163493A (en) * 2010-07-19 2017-09-15 Basf Se Aqueous alkaline cleaning compositions and method of their use
CN101972755B (zh) * 2010-07-21 2012-02-01 河北工业大学 Ulsi铜材料抛光后表面清洗方法
CN101906638B (zh) * 2010-07-21 2012-09-19 河北工业大学 硅衬底材料抛光后表面清洗方法
US8921295B2 (en) 2010-07-23 2014-12-30 American Sterilizer Company Biodegradable concentrated neutral detergent composition
CN102623327B (zh) * 2011-01-31 2015-04-29 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨方法
JP6123335B2 (ja) * 2012-02-17 2017-05-10 三菱化学株式会社 半導体デバイス用洗浄液及び半導体デバイス用基板の洗浄方法
TWI572711B (zh) 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
US8647445B1 (en) * 2012-11-06 2014-02-11 International Business Machines Corporation Process for cleaning semiconductor devices and/or tooling during manufacturing thereof
US9058976B2 (en) 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
WO2015068823A1 (ja) * 2013-11-08 2015-05-14 和光純薬工業株式会社 半導体基板用洗浄剤および半導体基板表面の処理方法
JP6228505B2 (ja) 2014-04-11 2017-11-08 東芝メモリ株式会社 基板処理方法
JP2015203047A (ja) * 2014-04-11 2015-11-16 三菱化学株式会社 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法
TWI636131B (zh) 2014-05-20 2018-09-21 日商Ｊｓｒ股份有限公司 清洗用組成物及清洗方法
CN104357861B (zh) * 2014-10-31 2016-06-22 陕西师范大学 一种鎏金层铜锈凝胶除锈剂
KR102326028B1 (ko) 2015-01-26 2021-11-16 삼성디스플레이 주식회사 반도체 및 디스플레이 제조공정용 세정제 조성물
JP6112329B1 (ja) 2016-05-10 2017-04-12 Jsr株式会社 半導体洗浄用組成物および洗浄方法
JP6112330B1 (ja) 2016-05-10 2017-04-12 Jsr株式会社 半導体洗浄用組成物および洗浄方法
US10319605B2 (en) 2016-05-10 2019-06-11 Jsr Corporation Semiconductor treatment composition and treatment method
KR102626655B1 (ko) 2017-02-08 2024-01-17 제이에스알 가부시끼가이샤 반도체 처리용 조성물 및 처리 방법
KR20200032024A (ko) 2017-08-03 2020-03-25 제이에스알 가부시끼가이샤 반도체 처리용 조성물 및 처리 방법
CN112638863B (zh) 2018-08-30 2023-11-07 亨斯迈石油化学有限责任公司 多胺的季铵碱
KR20210107656A (ko) * 2018-12-18 2021-09-01 가부시키가이샤 도쿠야마 실리콘 에칭액
CN110484387A (zh) * 2019-09-12 2019-11-22 河北工业大学 一种碱性集成电路布线抛光后低k介质清洗剂及其清洗方法
CN110484388A (zh) * 2019-09-12 2019-11-22 河北工业大学 一种适用于集成电路制程中低k介质材料清洗剂及其清洗方法
JP7498427B2 (ja) * 2020-03-31 2024-06-12 日産化学株式会社 洗浄剤組成物及び加工された半導体基板の製造方法
WO2021230127A1 (ja) * 2020-05-12 2021-11-18 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液、半導体基板の洗浄方法
CN112175756A (zh) * 2020-11-05 2021-01-05 河北工业大学 用于去除多层铜互连阻挡层cmp后表面残留物的清洗液
CN113186543B (zh) * 2021-04-27 2023-03-14 上海新阳半导体材料股份有限公司 一种化学机械抛光后清洗液及其制备方法
CN114859677B (zh) * 2022-04-01 2025-09-26 晶瑞(湖北)微电子材料有限公司 一种四甲基氢氧化铵显影液及其制备方法和应用

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
ES2328309T3 (es) * 1998-05-18 2009-11-11 Mallinckrodt Baker, Inc. Composiciones alcalinas que contienen silicato para limpiar sustratos microelectronicos.
TW500831B (en) * 1999-01-20 2002-09-01 Sumitomo Chemical Co Metal-corrosion inhibitor and cleaning liquid
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6475966B1 (en) 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US6635118B2 (en) * 2001-01-17 2003-10-21 International Business Machines Corporation Aqueous cleaning of polymer apply equipment
JP4945857B2 (ja) 2001-06-13 2012-06-06 Ｊｓｒ株式会社 研磨パッド洗浄用組成物及び研磨パッド洗浄方法
MY131912A (en) 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
PL1664935T3 (pl) * 2003-08-19 2008-01-31 Avantor Performance Mat Inc Kompozycje do usuwania powłok oraz czyszczenia dla mikroelektroniki
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
US20060148666A1 (en) * 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes

Also Published As

Publication number Publication date
CN101386811A (zh) 2009-03-18
EP2028262B1 (de) 2012-02-15
SG149784A1 (en) 2009-02-27
EP2028262A2 (de) 2009-02-25
JP2009055020A (ja) 2009-03-12
US7498295B2 (en) 2009-03-03
KR20090013117A (ko) 2009-02-04
TW200918663A (en) 2009-05-01
EP2028262A3 (de) 2009-04-01
US20080047592A1 (en) 2008-02-28

Similar Documents

Publication Publication Date Title
SG149784A1 (en) Improved alkaline chemistry for post-cmp cleaning
ATE432974T1 (de) Verbessertes säuberungsalkali für die post-cmp reinigung
DE602005014094D1 (de) Verbesserte saure chemie für säuberung nach cmp
CN100429299C (zh) 化学机械研磨后洗涤液组合物
KR100533194B1 (ko) 세정액
JP2009278018A (ja) 半導体基板洗浄液組成物
JP2003289060A (ja) 半導体デバイス用基板の洗浄液および洗浄方法
CN109326501B (zh) 一种半导体晶圆最终抛光后的清洗方法
KR20080079198A (ko) 반도체 디바이스용 세정제 및 이것을 사용한 반도체디바이스의 세정방법
WO2010084033A2 (en) Composition for post chemical-mechanical polishing cleaning
Hazarika et al. Post-chemical mechanical planarization cleaning technology
Sun et al. Non-ionic surfactant on particles removal in post-CMP cleaning
Tseng et al. Post copper CMP hybrid clean process for advanced BEOL technology
JP6812567B2 (ja) 化学的機械的研磨後の洗浄用組成物
KR101101378B1 (ko) Ｔｆｔ-ｌｃｄ용 세정액 조성물
US20070240734A1 (en) Method of cleaning post-cmp wafer
JP2009076716A (ja) 基板洗浄方法および半導体装置の製造方法
KR100906043B1 (ko) 반도체 소자의 세정 방법
KR100661240B1 (ko) 구리의 화학기계적연마 후 세정 방법
Kuroda et al. Development of next generation post copper CMP cleaners
JP2005311083A (ja) 半導体装置の製造方法
Tseng et al. Hybrid clean approach for post-copper CMP defect reduction
TWI395838B (zh) The composition used to clean the polishing pad
de Larios CMP cleaning
JP2005303017A (ja) 半導体集積回路装置の製造方法および半導体集積回路装置の製造装置