ATE542317T1 - Optokoppler - Google Patents

Optokoppler

Info

Publication number
ATE542317T1
ATE542317T1 AT10153815T AT10153815T ATE542317T1 AT E542317 T1 ATE542317 T1 AT E542317T1 AT 10153815 T AT10153815 T AT 10153815T AT 10153815 T AT10153815 T AT 10153815T AT E542317 T1 ATE542317 T1 AT E542317T1
Authority
AT
Austria
Prior art keywords
light
receiving
optical coupler
receiving element
emitting element
Prior art date
Application number
AT10153815T
Other languages
English (en)
Inventor
Eiichi Omura
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Application granted granted Critical
Publication of ATE542317T1 publication Critical patent/ATE542317T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/801—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections
    • H04B10/802—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections for isolation, e.g. using optocouplers
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01047—Silver [Ag]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
AT10153815T 2009-04-23 2010-02-17 Optokoppler ATE542317T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009105552A JP5381280B2 (ja) 2009-04-23 2009-04-23 光結合装置

Publications (1)

Publication Number Publication Date
ATE542317T1 true ATE542317T1 (de) 2012-02-15

Family

ID=42338253

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10153815T ATE542317T1 (de) 2009-04-23 2010-02-17 Optokoppler

Country Status (5)

Country Link
US (1) US8410464B2 (de)
EP (1) EP2244396B1 (de)
JP (1) JP5381280B2 (de)
CN (1) CN101872761B (de)
AT (1) ATE542317T1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067663A (ja) * 2008-09-09 2010-03-25 Nec Electronics Corp リレー回路
KR101351737B1 (ko) * 2009-10-09 2014-01-14 파나소닉 주식회사 반도체 릴레이
US9472536B2 (en) 2011-10-11 2016-10-18 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP5649547B2 (ja) * 2011-10-11 2015-01-07 株式会社東芝 半導体装置の製造方法
US9012826B2 (en) 2012-01-03 2015-04-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Optocoupler with multiple photodetectors and improved feedback control of LED
JP5865859B2 (ja) * 2013-03-22 2016-02-17 株式会社東芝 光結合装置
CN103531566A (zh) * 2013-10-28 2014-01-22 沈健 一种mos器件用的引线框架
JP2015177052A (ja) * 2014-03-14 2015-10-05 株式会社東芝 光結合装置
WO2015174117A1 (ja) * 2014-05-12 2015-11-19 シャープ株式会社 光検出装置
JP2016086098A (ja) * 2014-10-27 2016-05-19 パナソニックＩｐマネジメント株式会社 光結合装置
JP6402091B2 (ja) * 2015-12-17 2018-10-10 株式会社東芝 光結合装置
DE102016112162A1 (de) * 2016-07-04 2018-01-04 Infineon Technologies Ag Elektronische schalt- und verpolschutzschaltung
RU2633934C1 (ru) * 2016-07-11 2017-10-19 Федеральное государственное бюджетное образовательное учреждение высшего образования "Оренбургский государственный университет" Оптопара
CN106020284A (zh) * 2016-07-19 2016-10-12 南京工程学院 一种用于电动车控制系统的电冷却系统
JP6620176B2 (ja) * 2018-01-29 2019-12-11 アオイ電子株式会社 半導体装置
CN110444538A (zh) * 2018-05-02 2019-11-12 睿宇兴业有限公司 电子装置
US11239805B2 (en) 2018-10-09 2022-02-01 Analog Devices, Inc. Differential opto isolator
CN111276472A (zh) * 2018-12-05 2020-06-12 喆光照明光电股份有限公司 具有反光部的层叠光耦结构
WO2022264980A1 (ja) * 2021-06-14 2022-12-22 ローム株式会社 絶縁モジュール
CN113556120A (zh) * 2021-07-16 2021-10-26 贵州航天电器股份有限公司 一种小型化大负载的固态继电器
CN117882201A (zh) * 2021-08-30 2024-04-12 罗姆股份有限公司 半导体装置和半导体装置的制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2272377B1 (de) * 1974-05-24 1977-06-24 Texas Instruments France
JPS63112357U (de) * 1987-01-16 1988-07-19
JPS63221686A (ja) * 1987-03-10 1988-09-14 Nec Corp 集積回路装置
JPS6426863U (de) * 1987-03-25 1989-02-15
JPH0233459U (de) * 1988-08-24 1990-03-02
JPH02308576A (ja) * 1989-05-23 1990-12-21 Sharp Corp フォトカプラ
JPH05218491A (ja) 1992-02-04 1993-08-27 Sharp Corp 光結合装置
JPH05308151A (ja) 1992-04-30 1993-11-19 Sharp Corp 光結合装置
JP3026396B2 (ja) 1992-10-29 2000-03-27 沖電気工業株式会社 光結合型半導体装置
JPH06177418A (ja) * 1992-12-04 1994-06-24 Toshiba Corp ホトカプラ装置
US5391868A (en) * 1993-03-09 1995-02-21 Santa Barbara Research Center Low power serial bias photoconductive detectors
JP2985691B2 (ja) * 1994-03-23 1999-12-06 株式会社デンソー 半導体装置
JPH09199756A (ja) * 1996-01-22 1997-07-31 Toshiba Corp 反射型光結合装置
JP3725410B2 (ja) * 2000-08-28 2005-12-14 シャープ株式会社 光結合半導体装置及びその製造方法
JP2007165621A (ja) * 2005-12-14 2007-06-28 Toshiba Corp 光結合装置
US7835410B2 (en) * 2007-02-07 2010-11-16 Finisar Corporation Opto-isolator including a vertical cavity surface emitting laser
US20090044852A1 (en) * 2007-08-15 2009-02-19 Zeta Controls Limited Solar panel

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JP5381280B2 (ja) 2014-01-08
US8410464B2 (en) 2013-04-02
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CN101872761B (zh) 2012-06-13
EP2244396A3 (de) 2010-11-10
EP2244396A2 (de) 2010-10-27
JP2010258165A (ja) 2010-11-11
CN101872761A (zh) 2010-10-27

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