ATE527580T1 - Projektionsbelichtungsanlage - Google Patents

Projektionsbelichtungsanlage

Info

Publication number
ATE527580T1
ATE527580T1 AT01116995T AT01116995T ATE527580T1 AT E527580 T1 ATE527580 T1 AT E527580T1 AT 01116995 T AT01116995 T AT 01116995T AT 01116995 T AT01116995 T AT 01116995T AT E527580 T1 ATE527580 T1 AT E527580T1
Authority
AT
Austria
Prior art keywords
projection exposure
exposure system
locally
filter
less
Prior art date
Application number
AT01116995T
Other languages
German (de)
English (en)
Inventor
Martin Antoni
Original Assignee
Zeiss Carl Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Gmbh filed Critical Zeiss Carl Smt Gmbh
Application granted granted Critical
Publication of ATE527580T1 publication Critical patent/ATE527580T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Filters (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Glass Compositions (AREA)
AT01116995T 2000-09-02 2001-07-12 Projektionsbelichtungsanlage ATE527580T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10043315A DE10043315C1 (de) 2000-09-02 2000-09-02 Projektionsbelichtungsanlage

Publications (1)

Publication Number Publication Date
ATE527580T1 true ATE527580T1 (de) 2011-10-15

Family

ID=7654778

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01116995T ATE527580T1 (de) 2000-09-02 2001-07-12 Projektionsbelichtungsanlage

Country Status (6)

Country Link
US (1) US6535274B2 (enExample)
EP (1) EP1186956B1 (enExample)
JP (1) JP4778642B2 (enExample)
KR (2) KR20020018558A (enExample)
AT (1) ATE527580T1 (enExample)
DE (1) DE10043315C1 (enExample)

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KR20010085493A (ko) * 2000-02-25 2001-09-07 시마무라 기로 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법
TW498408B (en) * 2000-07-05 2002-08-11 Asm Lithography Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1170635B1 (en) * 2000-07-05 2006-06-07 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
DE10227190A1 (de) * 2002-06-18 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Filterung von Strahlung
DE10322376A1 (de) * 2003-05-13 2004-12-02 Carl Zeiss Smt Ag Axiconsystem und Beleuchtungssystem damit
US7511886B2 (en) 2003-05-13 2009-03-31 Carl Zeiss Smt Ag Optical beam transformation system and illumination system comprising an optical beam transformation system
WO2005006079A1 (de) * 2003-07-07 2005-01-20 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine mikrolithographische projektionsbelichtungsanlage
US7312850B2 (en) * 2004-04-02 2007-12-25 Asml Netherlands B.V. Lithographic apparatus, illumination system, and optical element for rotating an intensity distribution
JP5159027B2 (ja) 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
DE102004063314A1 (de) * 2004-12-23 2006-07-13 Carl Zeiss Smt Ag Filtereinrichtung für die Kompensation einer asymmetrischen Pupillenausleuchtung
US7790334B2 (en) * 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
JP4337746B2 (ja) * 2005-03-09 2009-09-30 セイコーエプソン株式会社 フォトマスクおよびその製造方法、電子機器の製造方法
US7525638B2 (en) * 2005-03-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7553611B2 (en) * 2005-03-31 2009-06-30 Sandisk 3D Llc Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
DE102005027697A1 (de) * 2005-06-15 2006-12-28 Infineon Technologies Ag EUV-Reflexionsmaske und Verfahren zu deren Herstellung
US7372549B2 (en) 2005-06-24 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007027240A (ja) * 2005-07-13 2007-02-01 Nikon Corp 照明光学装置、露光装置、および露光方法
WO2007039257A1 (en) * 2005-10-03 2007-04-12 Firma Carl Zeiss Smt Ag Illumination system comprising an otpical filter
KR20080059625A (ko) * 2005-10-04 2008-06-30 칼 짜이스 에스엠테 아게 리소그래피 장치 및 제어 방법
JP4956963B2 (ja) * 2005-11-02 2012-06-20 富士通セミコンダクター株式会社 リフロー装置、リフロー方法、および半導体装置の製造方法
JP5097119B2 (ja) * 2005-11-03 2012-12-12 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置
US7724351B2 (en) * 2006-01-30 2010-05-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and exchangeable optical element
TWI570520B (zh) * 2006-03-27 2017-02-11 尼康股份有限公司 照明光學裝置、曝光裝置以及元件製造方法
US7791724B2 (en) * 2006-06-13 2010-09-07 Asml Netherlands B.V. Characterization of transmission losses in an optical system
US7990520B2 (en) 2006-12-18 2011-08-02 Carl Zeiss Smt Gmbh Microlithography illumination systems, components and methods
JP2010517310A (ja) 2007-01-30 2010-05-20 カール・ツァイス・エスエムティー・アーゲー マイクロリソグラフィ投影露光装置の照明システム
US7714984B2 (en) * 2007-03-28 2010-05-11 Asml Holding N.V. Residual pupil asymmetry compensator for a lithography scanner
US7843549B2 (en) * 2007-05-23 2010-11-30 Asml Holding N.V. Light attenuating filter for correcting field dependent ellipticity and uniformity
JP2009043933A (ja) * 2007-08-08 2009-02-26 Canon Inc 露光装置、調整方法、露光方法及びデバイス製造方法
DE102008011501A1 (de) 2008-02-25 2009-08-27 Carl Zeiss Smt Ag Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage
DE102008042463B3 (de) * 2008-09-30 2010-04-22 Carl Zeiss Smt Ag Optische Messvorrichtung für eine Projektionsbelichtungsanlage
US8749760B2 (en) * 2009-03-03 2014-06-10 International Business Machines Corporation Asymmetric complementary dipole illuminator
US9134629B2 (en) 2009-03-04 2015-09-15 Asml Netherlands B.V. Illumination system, lithographic apparatus and method of forming an illumination mode
US8355116B2 (en) * 2009-06-19 2013-01-15 Nikon Corporation Exposure apparatus and device manufacturing method
US8294878B2 (en) * 2009-06-19 2012-10-23 Nikon Corporation Exposure apparatus and device manufacturing method
JP5608233B2 (ja) 2009-07-31 2014-10-15 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学ビーム偏向要素及び調節方法
DE102010042901B3 (de) * 2010-10-26 2012-04-05 Carl Zeiss Smt Gmbh Polarisationsaktuator
CN102331688B (zh) * 2011-10-25 2013-06-26 中国科学院光电技术研究所 一种光瞳均匀性补偿装置
JP6033890B2 (ja) * 2012-02-21 2016-11-30 エーエスエムエル ネザーランズ ビー．ブイ． 検査装置及び方法
WO2017144265A1 (en) * 2016-02-25 2017-08-31 Asml Netherlands B.V. Beam homogenizer, illumination system and metrology system
US10615084B2 (en) * 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
US11702750B2 (en) * 2020-06-10 2023-07-18 Sandisk Technologies Llc Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer
DE102021106836A1 (de) * 2020-10-02 2022-04-07 Karl Storz Se & Co. Kg Optisches Filtersystem für ein Video-Endoskop, Anzeigesystem und Video-Endoskop
DE102021204170B4 (de) * 2021-04-27 2024-09-26 Carl Zeiss Smt Gmbh Messvorrichtung sowie Verfahren zur Messung einer Wirkung einer wellenlängenabhängigen Messlicht-Reflektivität sowie einer Wirkung einer Polarisation von Messlicht auf eine Messlicht-Beaufschlagung einer Lithografiemaske
CN121057979A (zh) 2023-05-04 2025-12-02 卡尔蔡司Smt有限责任公司 用于调整微光刻的投射曝光系统中的远心的方法

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JP3358109B2 (ja) * 1992-07-06 2002-12-16 株式会社ニコン 投影露光方法及び装置、並びにデバイス製造方法
JPH06333803A (ja) * 1992-09-18 1994-12-02 Sharp Corp 投影型露光装置用フィルター
JPH06260384A (ja) * 1993-03-08 1994-09-16 Nikon Corp 露光量制御方法
US5642183A (en) * 1993-08-27 1997-06-24 Sharp Kabushiki Kaisha Spatial filter used in a reduction-type projection printing apparatus
JPH0922869A (ja) * 1995-07-07 1997-01-21 Nikon Corp 露光装置
JPH0936026A (ja) * 1995-07-14 1997-02-07 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
JPH0955350A (ja) * 1995-08-14 1997-02-25 Sony Corp 露光方法および露光装置
JP3232473B2 (ja) * 1996-01-10 2001-11-26 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
US5712698A (en) * 1996-03-04 1998-01-27 Siemens Aktiengesellschaft Independently controllable shutters and variable area apertures for off axis illumination
US6015644A (en) * 1998-02-20 2000-01-18 Lucent Technologies Inc. Process for device fabrication using a variable transmission aperture
JP3817365B2 (ja) * 1998-04-30 2006-09-06 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
US6930754B1 (en) * 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method

Also Published As

Publication number Publication date
US6535274B2 (en) 2003-03-18
EP1186956A3 (de) 2005-06-15
EP1186956A2 (de) 2002-03-13
KR20020018558A (ko) 2002-03-08
EP1186956B1 (de) 2011-10-05
KR20080044219A (ko) 2008-05-20
US20020075468A1 (en) 2002-06-20
JP4778642B2 (ja) 2011-09-21
DE10043315C1 (de) 2002-06-20
JP2002093700A (ja) 2002-03-29
KR100891340B1 (ko) 2009-03-31

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