KR20020018558A - 투사 노출 장치 - Google Patents

투사 노출 장치 Download PDF

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Publication number
KR20020018558A
KR20020018558A KR1020010050833A KR20010050833A KR20020018558A KR 20020018558 A KR20020018558 A KR 20020018558A KR 1020010050833 A KR1020010050833 A KR 1020010050833A KR 20010050833 A KR20010050833 A KR 20010050833A KR 20020018558 A KR20020018558 A KR 20020018558A
Authority
KR
South Korea
Prior art keywords
filter
filter element
projection
exposure apparatus
projection exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020010050833A
Other languages
English (en)
Korean (ko)
Inventor
마틴 안토니
Original Assignee
추후보정
칼-자이스- 스티풍 트레이딩 애즈 칼 자이스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 추후보정, 칼-자이스- 스티풍 트레이딩 애즈 칼 자이스 filed Critical 추후보정
Publication of KR20020018558A publication Critical patent/KR20020018558A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Filters (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Glass Compositions (AREA)
KR1020010050833A 2000-09-02 2001-08-23 투사 노출 장치 Ceased KR20020018558A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10043315A DE10043315C1 (de) 2000-09-02 2000-09-02 Projektionsbelichtungsanlage
DE10043315.4 2000-09-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020080039561A Division KR100891340B1 (ko) 2000-09-02 2008-04-28 투영 노광 장치

Publications (1)

Publication Number Publication Date
KR20020018558A true KR20020018558A (ko) 2002-03-08

Family

ID=7654778

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020010050833A Ceased KR20020018558A (ko) 2000-09-02 2001-08-23 투사 노출 장치
KR1020080039561A Expired - Fee Related KR100891340B1 (ko) 2000-09-02 2008-04-28 투영 노광 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020080039561A Expired - Fee Related KR100891340B1 (ko) 2000-09-02 2008-04-28 투영 노광 장치

Country Status (6)

Country Link
US (1) US6535274B2 (enExample)
EP (1) EP1186956B1 (enExample)
JP (1) JP4778642B2 (enExample)
KR (2) KR20020018558A (enExample)
AT (1) ATE527580T1 (enExample)
DE (1) DE10043315C1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110133571A (ko) * 2009-03-03 2011-12-13 인터내셔널 비지네스 머신즈 코포레이션 광학 리소그래피 장치
KR101156369B1 (ko) * 2004-12-23 2012-06-13 칼 짜이스 에스엠티 게엠베하 비대칭 동공 조명의 보정을 위한 필터 장치

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SG107560A1 (en) * 2000-02-25 2004-12-29 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
TW498408B (en) * 2000-07-05 2002-08-11 Asm Lithography Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1170635B1 (en) * 2000-07-05 2006-06-07 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
DE10227190A1 (de) * 2002-06-18 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Filterung von Strahlung
US7511886B2 (en) 2003-05-13 2009-03-31 Carl Zeiss Smt Ag Optical beam transformation system and illumination system comprising an optical beam transformation system
DE10322376A1 (de) * 2003-05-13 2004-12-02 Carl Zeiss Smt Ag Axiconsystem und Beleuchtungssystem damit
AU2003249967A1 (en) * 2003-07-07 2005-01-28 Carl Zeiss Smt Ag Lighting device for a microlithographic projection exposure system
US7312850B2 (en) * 2004-04-02 2007-12-25 Asml Netherlands B.V. Lithographic apparatus, illumination system, and optical element for rotating an intensity distribution
JP5159027B2 (ja) 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
US7790334B2 (en) * 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
JP4337746B2 (ja) * 2005-03-09 2009-09-30 セイコーエプソン株式会社 フォトマスクおよびその製造方法、電子機器の製造方法
US7525638B2 (en) * 2005-03-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7553611B2 (en) * 2005-03-31 2009-06-30 Sandisk 3D Llc Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
DE102005027697A1 (de) * 2005-06-15 2006-12-28 Infineon Technologies Ag EUV-Reflexionsmaske und Verfahren zu deren Herstellung
US7372549B2 (en) 2005-06-24 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007027240A (ja) * 2005-07-13 2007-02-01 Nikon Corp 照明光学装置、露光装置、および露光方法
WO2007039257A1 (en) * 2005-10-03 2007-04-12 Firma Carl Zeiss Smt Ag Illumination system comprising an otpical filter
KR20080059625A (ko) * 2005-10-04 2008-06-30 칼 짜이스 에스엠테 아게 리소그래피 장치 및 제어 방법
JP4956963B2 (ja) 2005-11-02 2012-06-20 富士通セミコンダクター株式会社 リフロー装置、リフロー方法、および半導体装置の製造方法
WO2007051574A1 (en) * 2005-11-03 2007-05-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
US7724351B2 (en) 2006-01-30 2010-05-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and exchangeable optical element
TWI570520B (zh) * 2006-03-27 2017-02-11 尼康股份有限公司 照明光學裝置、曝光裝置以及元件製造方法
US7791724B2 (en) 2006-06-13 2010-09-07 Asml Netherlands B.V. Characterization of transmission losses in an optical system
US7990520B2 (en) 2006-12-18 2011-08-02 Carl Zeiss Smt Gmbh Microlithography illumination systems, components and methods
KR101440652B1 (ko) 2007-01-30 2014-09-22 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템
US7714984B2 (en) * 2007-03-28 2010-05-11 Asml Holding N.V. Residual pupil asymmetry compensator for a lithography scanner
US7843549B2 (en) * 2007-05-23 2010-11-30 Asml Holding N.V. Light attenuating filter for correcting field dependent ellipticity and uniformity
JP2009043933A (ja) * 2007-08-08 2009-02-26 Canon Inc 露光装置、調整方法、露光方法及びデバイス製造方法
DE102008011501A1 (de) 2008-02-25 2009-08-27 Carl Zeiss Smt Ag Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage
DE102008042463B3 (de) * 2008-09-30 2010-04-22 Carl Zeiss Smt Ag Optische Messvorrichtung für eine Projektionsbelichtungsanlage
CN102341754B (zh) * 2009-03-04 2014-10-01 Asml荷兰有限公司 照射系统、光刻设备以及形成照射模式的方法
US8294878B2 (en) * 2009-06-19 2012-10-23 Nikon Corporation Exposure apparatus and device manufacturing method
US8355116B2 (en) * 2009-06-19 2013-01-15 Nikon Corporation Exposure apparatus and device manufacturing method
WO2011012148A1 (en) 2009-07-31 2011-02-03 Carl Zeiss Smt Gmbh Optical beam deflecting element and method of adjustment
DE102010042901B3 (de) * 2010-10-26 2012-04-05 Carl Zeiss Smt Gmbh Polarisationsaktuator
CN102331688B (zh) * 2011-10-25 2013-06-26 中国科学院光电技术研究所 一种光瞳均匀性补偿装置
JP6033890B2 (ja) 2012-02-21 2016-11-30 エーエスエムエル ネザーランズ ビー．ブイ． 検査装置及び方法
WO2017144265A1 (en) * 2016-02-25 2017-08-31 Asml Netherlands B.V. Beam homogenizer, illumination system and metrology system
US12142535B2 (en) * 2016-03-01 2024-11-12 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter using a unit cell having geometric symmetry
US11702750B2 (en) * 2020-06-10 2023-07-18 Sandisk Technologies Llc Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer
DE102021106836A1 (de) * 2020-10-02 2022-04-07 Karl Storz Se & Co. Kg Optisches Filtersystem für ein Video-Endoskop, Anzeigesystem und Video-Endoskop
DE102021204170B4 (de) * 2021-04-27 2024-09-26 Carl Zeiss Smt Gmbh Messvorrichtung sowie Verfahren zur Messung einer Wirkung einer wellenlängenabhängigen Messlicht-Reflektivität sowie einer Wirkung einer Polarisation von Messlicht auf eine Messlicht-Beaufschlagung einer Lithografiemaske
WO2024227859A1 (en) 2023-05-04 2024-11-07 Carl Zeiss Smt Gmbh Method for adjusting the telecentricity in a projection exposure system for microlithography

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KR950004968B1 (ko) * 1991-10-15 1995-05-16 가부시키가이샤 도시바 투영노광 장치
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JPH06333803A (ja) * 1992-09-18 1994-12-02 Sharp Corp 投影型露光装置用フィルター
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101156369B1 (ko) * 2004-12-23 2012-06-13 칼 짜이스 에스엠티 게엠베하 비대칭 동공 조명의 보정을 위한 필터 장치
KR20110133571A (ko) * 2009-03-03 2011-12-13 인터내셔널 비지네스 머신즈 코포레이션 광학 리소그래피 장치

Also Published As

Publication number Publication date
US20020075468A1 (en) 2002-06-20
EP1186956A2 (de) 2002-03-13
KR20080044219A (ko) 2008-05-20
JP2002093700A (ja) 2002-03-29
US6535274B2 (en) 2003-03-18
EP1186956B1 (de) 2011-10-05
EP1186956A3 (de) 2005-06-15
DE10043315C1 (de) 2002-06-20
KR100891340B1 (ko) 2009-03-31
ATE527580T1 (de) 2011-10-15
JP4778642B2 (ja) 2011-09-21

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