ATE522027T1 - Ansteuerschaltung für einen bipolartransistor mit isoliertem gate (igbt) - Google Patents

Ansteuerschaltung für einen bipolartransistor mit isoliertem gate (igbt)

Info

Publication number
ATE522027T1
ATE522027T1 AT05103783T AT05103783T ATE522027T1 AT E522027 T1 ATE522027 T1 AT E522027T1 AT 05103783 T AT05103783 T AT 05103783T AT 05103783 T AT05103783 T AT 05103783T AT E522027 T1 ATE522027 T1 AT E522027T1
Authority
AT
Austria
Prior art keywords
whose
igbt
driving circuit
terminal
boost capacitor
Prior art date
Application number
AT05103783T
Other languages
English (en)
Inventor
Erkki Miettinen
Original Assignee
Abb Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Oy filed Critical Abb Oy
Application granted granted Critical
Publication of ATE522027T1 publication Critical patent/ATE522027T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit

Landscapes

  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Networks Using Active Elements (AREA)
AT05103783T 2004-05-10 2005-05-06 Ansteuerschaltung für einen bipolartransistor mit isoliertem gate (igbt) ATE522027T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20045171A FI116109B (fi) 2004-05-10 2004-05-10 Puolijohdekomponentin ohjauskytkentä

Publications (1)

Publication Number Publication Date
ATE522027T1 true ATE522027T1 (de) 2011-09-15

Family

ID=32338450

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05103783T ATE522027T1 (de) 2004-05-10 2005-05-06 Ansteuerschaltung für einen bipolartransistor mit isoliertem gate (igbt)

Country Status (4)

Country Link
US (1) US7109780B2 (de)
EP (1) EP1596496B1 (de)
AT (1) ATE522027T1 (de)
FI (1) FI116109B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI118145B (fi) * 2006-01-09 2007-07-13 Abb Oy Hilaohjatun kytkimen sammutus
JP2008306618A (ja) * 2007-06-11 2008-12-18 Nissan Motor Co Ltd 電圧駆動型素子を駆動するための駆動回路
DE102007036728B3 (de) * 2007-08-03 2008-09-11 Semikron Elektronik Gmbh & Co. Kg Treiberschaltung zur Ansteuerung eines Leistungshalbleiterschalters
CN101888229B (zh) * 2010-05-25 2013-03-27 中国电力科学研究院 一种新的igbt高压串联阀控制与监测系统
TWI428611B (zh) 2010-09-10 2014-03-01 Ind Tech Res Inst 零偏壓式功率偵測器
ITTO20110769A1 (it) 2011-08-12 2013-02-13 Magneti Marelli Spa Dispositivo e metodo di scarica per un condensatore in un impianto elettrico di potenza di un veicolo con trazione elettrica
WO2014068352A2 (en) * 2012-10-31 2014-05-08 Freescale Semiconductor, Inc. Method and apparatus for driving a power transistor gate
WO2015001373A1 (en) 2013-07-04 2015-01-08 Freescale Semiconductor, Inc. A gate drive circuit and a method for setting up a gate drive circuit
CN105359410B (zh) 2013-07-04 2018-01-30 飞思卡尔半导体公司 栅极驱动电路以及用于控制功率晶体管的方法
JP6842837B2 (ja) * 2016-03-30 2021-03-17 ローム株式会社 ゲート駆動回路
DE102016006227B3 (de) * 2016-05-19 2017-08-31 Audi Ag Elektrische Schaltungsanordnung
DE102016220279A1 (de) * 2016-10-17 2018-04-19 Robert Bosch Gmbh Schaltungsanordnung zur Vorladung einer Zwischenkreiskapazität eines Hochvolt-Bordnetzes
US10505579B2 (en) * 2018-02-02 2019-12-10 Samsung Electro-Mechanics Co., Ltd. Radio frequency switching device for fast switching operation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68925163T2 (de) * 1988-08-12 1996-08-08 Hitachi Ltd Treiberschaltung für Transistor mit isoliertem Gate; und deren Verwendung in einem Schalterkreis, einer Stromschalteinrichtung, und einem Induktionsmotorsystem
JP2674355B2 (ja) 1991-05-15 1997-11-12 三菱電機株式会社 パワー素子の過電流保護装置
FI97176C (fi) 1994-09-27 1996-10-25 Abb Industry Oy Puolijohdekytkimen ohjauspiiri
US5500616A (en) * 1995-01-13 1996-03-19 Ixys Corporation Overvoltage clamp and desaturation detection circuit
EP0814564A1 (de) * 1996-06-20 1997-12-29 ANSALDO INDUSTRIA S.p.A. Elektronischer Schaltkreis mit reduzierten Schalttransienten
US6094087A (en) * 1997-07-30 2000-07-25 Lucent Technologies Inc. Gate drive circuit for isolated gate devices and method of operation thereof
FI110972B (fi) 1999-03-10 2003-04-30 Abb Industry Oy Stabiloitu hilaohjain
DE50015173D1 (de) * 2000-07-13 2008-07-03 Ct Concept Technologie Ag Verfahren und vorrichtung zur zustandsabhängigen regelung des transienten verhaltens von leistungshalbleiterschaltern

Also Published As

Publication number Publication date
FI116109B (fi) 2005-09-15
EP1596496B1 (de) 2011-08-24
US20050248384A1 (en) 2005-11-10
EP1596496A1 (de) 2005-11-16
US7109780B2 (en) 2006-09-19
FI20045171A0 (fi) 2004-05-10

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Legal Events

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