ATE510043T1 - Mehrkammerfilmvorläufer-verdunstungssystem und dünnfilmauftragungssystem damit - Google Patents

Mehrkammerfilmvorläufer-verdunstungssystem und dünnfilmauftragungssystem damit

Info

Publication number
ATE510043T1
ATE510043T1 AT05852347T AT05852347T ATE510043T1 AT E510043 T1 ATE510043 T1 AT E510043T1 AT 05852347 T AT05852347 T AT 05852347T AT 05852347 T AT05852347 T AT 05852347T AT E510043 T1 ATE510043 T1 AT E510043T1
Authority
AT
Austria
Prior art keywords
tray
solid
precursor
evaporation system
film precursor
Prior art date
Application number
AT05852347T
Other languages
German (de)
English (en)
Inventor
Kenji Suzuki
Emmanuel P Guidotti
Gerrit J Leusink
Masamichi Hara
Daisuke Kuroiwa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE510043T1 publication Critical patent/ATE510043T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • H10P72/0428—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • H10P72/0476—
    • H10P72/1924—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AT05852347T 2004-11-29 2005-11-29 Mehrkammerfilmvorläufer-verdunstungssystem und dünnfilmauftragungssystem damit ATE510043T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/998,420 US7638002B2 (en) 2004-11-29 2004-11-29 Multi-tray film precursor evaporation system and thin film deposition system incorporating same
PCT/US2005/043018 WO2006058310A1 (en) 2004-11-29 2005-11-29 Multi-tray film precursor evaporation system and thin film deposition system incorporating same

Publications (1)

Publication Number Publication Date
ATE510043T1 true ATE510043T1 (de) 2011-06-15

Family

ID=36096429

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05852347T ATE510043T1 (de) 2004-11-29 2005-11-29 Mehrkammerfilmvorläufer-verdunstungssystem und dünnfilmauftragungssystem damit

Country Status (8)

Country Link
US (2) US7638002B2 (Direct)
EP (1) EP1863950B1 (Direct)
JP (1) JP5015002B2 (Direct)
KR (1) KR101194888B1 (Direct)
CN (2) CN101065515B (Direct)
AT (1) ATE510043T1 (Direct)
TW (1) TWI300956B (Direct)
WO (1) WO2006058310A1 (Direct)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7708835B2 (en) * 2004-11-29 2010-05-04 Tokyo Electron Limited Film precursor tray for use in a film precursor evaporation system and method of using
US7484315B2 (en) 2004-11-29 2009-02-03 Tokyo Electron Limited Replaceable precursor tray for use in a multi-tray solid precursor delivery system
US20060185597A1 (en) * 2004-11-29 2006-08-24 Kenji Suzuki Film precursor evaporation system and method of using
US7488512B2 (en) 2004-11-29 2009-02-10 Tokyo Electron Limited Method for preparing solid precursor tray for use in solid precursor evaporation system
US7638002B2 (en) 2004-11-29 2009-12-29 Tokyo Electron Limited Multi-tray film precursor evaporation system and thin film deposition system incorporating same
DE102004062552A1 (de) * 2004-12-24 2006-07-06 Aixtron Ag Vorrichtung zum Verdampfen von kondensierten Stoffen
US7651570B2 (en) 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition
US7345184B2 (en) * 2005-03-31 2008-03-18 Tokyo Electron Limited Method and system for refurbishing a metal carbonyl precursor
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
JP4847365B2 (ja) * 2006-03-22 2011-12-28 キヤノン株式会社 蒸着源および蒸着装置
US20070231489A1 (en) * 2006-03-29 2007-10-04 Tokyo Electron Limited Method for introducing a precursor gas to a vapor deposition system
US7892358B2 (en) * 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US7473634B2 (en) * 2006-09-28 2009-01-06 Tokyo Electron Limited Method for integrated substrate processing in copper metallization
JP5073751B2 (ja) * 2006-10-10 2012-11-14 エーエスエム アメリカ インコーポレイテッド 前駆体送出システム
US7846256B2 (en) * 2007-02-23 2010-12-07 Tokyo Electron Limited Ampule tray for and method of precursor surface area
JP5190446B2 (ja) * 2007-03-06 2013-04-24 東京エレクトロン株式会社 蒸着装置および蒸着装置の制御方法
US20080242088A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Method of forming low resistivity copper film structures
US7829454B2 (en) * 2007-09-11 2010-11-09 Tokyo Electron Limited Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US7704879B2 (en) * 2007-09-27 2010-04-27 Tokyo Electron Limited Method of forming low-resistivity recessed features in copper metallization
US7884012B2 (en) * 2007-09-28 2011-02-08 Tokyo Electron Limited Void-free copper filling of recessed features for semiconductor devices
WO2009064427A2 (en) * 2007-11-13 2009-05-22 Mckinley James J Variable concentration dynamic headspace vapor source generator
US9034105B2 (en) * 2008-01-10 2015-05-19 American Air Liquide, Inc. Solid precursor sublimator
US7776740B2 (en) * 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US7799681B2 (en) * 2008-07-15 2010-09-21 Tokyo Electron Limited Method for forming a ruthenium metal cap layer
US20100081274A1 (en) * 2008-09-29 2010-04-01 Tokyo Electron Limited Method for forming ruthenium metal cap layers
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) * 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
BRPI1010779B1 (pt) 2009-06-05 2019-01-02 Desmet Ballestra North America Inc aparelho para processar material gasto tendo sólidos, umidade residual, e solvente no mesmo resultando de um processo de extração de solvente, e método para processar material gasto tendo sólidos, umidade residual, e solvente no mesmo resultando de um processo precursor de extração de solvente
US8997775B2 (en) * 2011-05-24 2015-04-07 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US8776821B2 (en) * 2011-05-24 2014-07-15 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
EP2855730B1 (en) 2012-05-31 2020-08-12 Entegris Inc. Source reagent-based delivery of fluid with high material flux for batch deposition
EP3018530B1 (en) * 2013-07-03 2020-10-21 Murata Machinery, Ltd. Storage container
WO2015164029A1 (en) * 2014-04-21 2015-10-29 Entegris, Inc. Solid vaporizer
US9951420B2 (en) * 2014-11-10 2018-04-24 Sol Voltaics Ab Nanowire growth system having nanoparticles aerosol generator
KR102360536B1 (ko) * 2015-03-06 2022-02-08 엔테그리스, 아이엔씨. 고체 공급원 전달을 위한 고-순도 텅스텐 헥사카보닐
CN105624650B (zh) * 2016-01-04 2018-11-23 京东方科技集团股份有限公司 一种装置及该装置的使用方法
KR20170119360A (ko) * 2016-04-18 2017-10-27 삼성전자주식회사 고체 소스 공급 유닛, 가스 공급 유닛, 그리고 기판 처리 방법
JP6595421B2 (ja) 2016-08-24 2019-10-23 東芝メモリ株式会社 気化システム
US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
WO2018218373A1 (en) * 2017-06-02 2018-12-06 Simon Fraser University Method of patterned deposition employing pressurized fluids and thermal gradients
JP6895372B2 (ja) * 2017-12-12 2021-06-30 東京エレクトロン株式会社 原料容器
US20190186003A1 (en) * 2017-12-14 2019-06-20 Entegris, Inc. Ampoule vaporizer and vessel
KR20200020608A (ko) 2018-08-16 2020-02-26 에이에스엠 아이피 홀딩 비.브이. 고체 소스 승화기
CN110885970B (zh) * 2018-09-11 2024-06-21 北京北方华创微电子装备有限公司 固体前驱体蒸汽的稳压和纯化装置以及ald沉积设备
WO2020092501A2 (en) * 2018-10-31 2020-05-07 Ecodyst, Inc. Falling film evaporator system and methods
JP6887688B2 (ja) * 2019-02-07 2021-06-16 株式会社高純度化学研究所 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム
JP6901153B2 (ja) 2019-02-07 2021-07-14 株式会社高純度化学研究所 薄膜形成用金属ハロゲン化合物の固体気化供給システム。
WO2020251696A1 (en) 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
US11661653B2 (en) 2019-12-18 2023-05-30 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Vapor delivery systems for solid and liquid materials
CN113529053B (zh) * 2021-09-13 2021-12-28 浙江陶特容器科技股份有限公司 一种用于半导体加工的固态前驱体源升华装置及方法
CN116553656A (zh) * 2022-01-28 2023-08-08 阳程科技股份有限公司 海水转换机构
CN114751052B (zh) * 2022-04-30 2023-11-24 苏州宇信特殊包装股份有限公司 一种防潮脆盘及其加工装置
CN114811423A (zh) * 2022-05-18 2022-07-29 江苏南大光电材料股份有限公司 一种固态源气化装置
CN115046127B (zh) * 2022-06-24 2024-12-10 江苏南大光电材料股份有限公司 用于固体化合物供应的钢瓶结构
CN116103636A (zh) * 2023-04-12 2023-05-12 上海星原驰半导体有限公司 固相前驱体输出装置及气相沉积系统

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3003249A (en) * 1958-05-01 1961-10-10 Templeton Robert Alexa Spencer Treatment of products and materials
US3801294A (en) * 1971-12-15 1974-04-02 Corning Glass Works Method of producing glass
US4190965A (en) * 1979-01-15 1980-03-04 Alternative Pioneering Systems, Inc. Food dehydrator
US4378987A (en) * 1981-10-15 1983-04-05 Corning Glass Works Low temperature method for making optical fibers
US4817557A (en) * 1983-05-23 1989-04-04 Anicon, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4948623A (en) * 1987-06-30 1990-08-14 International Business Machines Corporation Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex
US4938999A (en) * 1988-07-11 1990-07-03 Jenkin William C Process for coating a metal substrate by chemical vapor deposition using a metal carbonyl
EP1069610A2 (en) * 1990-01-08 2001-01-17 Lsi Logic Corporation Refractory metal deposition process for low contact resistivity to silicon and corresponding apparatus
US6113982A (en) * 1990-06-25 2000-09-05 Lanxide Technology Company, Lp Composite bodies and methods for making same
JPH0598445A (ja) 1991-07-05 1993-04-20 Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai 有機金属化学気相蒸着用原料容器
US5221354A (en) * 1991-11-04 1993-06-22 General Electric Company Apparatus and method for gas phase coating of hollow articles
JPH06306584A (ja) 1993-04-21 1994-11-01 Asahi Glass Co Ltd 真空蒸着用原料成形体の製造方法
US6024915A (en) * 1993-08-12 2000-02-15 Agency Of Industrial Science & Technology Coated metal particles, a metal-base sinter and a process for producing same
JPH1025576A (ja) * 1996-04-05 1998-01-27 Dowa Mining Co Ltd Ｃｖｄ成膜法における原料化合物の昇華方法
US6133159A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods for preparing ruthenium oxide films
US6203619B1 (en) * 1998-10-26 2001-03-20 Symetrix Corporation Multiple station apparatus for liquid source fabrication of thin films
AU6954300A (en) * 1999-07-12 2001-01-30 Asml Us, Inc. Method and system for in situ cleaning of semiconductor manufacturing equipment using combination chemistries
JP3909792B2 (ja) * 1999-08-20 2007-04-25 パイオニア株式会社 化学気相成長法における原料供給装置及び原料供給方法
US6380080B2 (en) * 2000-03-08 2002-04-30 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6440494B1 (en) * 2000-04-05 2002-08-27 Tokyo Electron Limited In-situ source synthesis for metal CVD
US6429127B1 (en) * 2000-06-08 2002-08-06 Micron Technology, Inc. Methods for forming rough ruthenium-containing layers and structures/methods using same
US6903005B1 (en) * 2000-08-30 2005-06-07 Micron Technology, Inc. Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics
US20040161545A1 (en) * 2000-11-28 2004-08-19 Shipley Company, L.L.C. Adhesion method
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US20030111014A1 (en) * 2001-12-18 2003-06-19 Donatucci Matthew B. Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds
US6812143B2 (en) * 2002-04-26 2004-11-02 International Business Machines Corporation Process of forming copper structures
US20030211736A1 (en) * 2002-05-07 2003-11-13 Tokyo Electron Limited Method for depositing tantalum silicide films by thermal chemical vapor deposition
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7300038B2 (en) * 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
KR101183109B1 (ko) * 2002-07-30 2012-09-24 에이에스엠 아메리카, 인코포레이티드 캐리어 가스를 이용하는 승화 시스템
JP2004137480A (ja) * 2002-09-20 2004-05-13 Tdk Corp 蛍光体薄膜およびその製造方法ならびにｅｌパネル
JP4126219B2 (ja) * 2002-11-06 2008-07-30 東京エレクトロン株式会社 成膜方法
US7156380B2 (en) * 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US20050147749A1 (en) * 2004-01-05 2005-07-07 Msp Corporation High-performance vaporizer for liquid-precursor and multi-liquid-precursor vaporization in semiconductor thin film deposition
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US20060115590A1 (en) * 2004-11-29 2006-06-01 Tokyo Electron Limited; International Business Machines Corporation Method and system for performing in-situ cleaning of a deposition system
US7488512B2 (en) * 2004-11-29 2009-02-10 Tokyo Electron Limited Method for preparing solid precursor tray for use in solid precursor evaporation system
US7638002B2 (en) * 2004-11-29 2009-12-29 Tokyo Electron Limited Multi-tray film precursor evaporation system and thin film deposition system incorporating same
US7484315B2 (en) * 2004-11-29 2009-02-03 Tokyo Electron Limited Replaceable precursor tray for use in a multi-tray solid precursor delivery system
US8435351B2 (en) * 2004-11-29 2013-05-07 Tokyo Electron Limited Method and system for measuring a flow rate in a solid precursor delivery system
US20060185597A1 (en) * 2004-11-29 2006-08-24 Kenji Suzuki Film precursor evaporation system and method of using
US20060182886A1 (en) * 2005-02-15 2006-08-17 Guidotti Emmanuel P Method and system for improved delivery of a precursor vapor to a processing zone
US7273814B2 (en) * 2005-03-16 2007-09-25 Tokyo Electron Limited Method for forming a ruthenium metal layer on a patterned substrate
US7132128B2 (en) * 2005-03-31 2006-11-07 Tokyo Electron Limited Method and system for depositing material on a substrate using a solid precursor
US7396766B2 (en) * 2005-03-31 2008-07-08 Tokyo Electron Limited Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
US7651570B2 (en) * 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition
US7566477B2 (en) * 2005-03-31 2009-07-28 Tokyo Electron Limited Method for saturating a carrier gas with precursor vapor
US7482269B2 (en) * 2005-09-28 2009-01-27 Tokyo Electron Limited Method for controlling the step coverage of a ruthenium layer on a patterned substrate
JP4960720B2 (ja) * 2006-02-10 2012-06-27 東京エレクトロン株式会社 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法
US20070237895A1 (en) * 2006-03-30 2007-10-11 Tokyo Electron Limited Method and system for initiating a deposition process utilizing a metal carbonyl precursor
US7473634B2 (en) * 2006-09-28 2009-01-06 Tokyo Electron Limited Method for integrated substrate processing in copper metallization
US7763311B2 (en) * 2007-03-28 2010-07-27 Tokyo Electron Limited Method for heating a substrate prior to a vapor deposition process

Also Published As

Publication number Publication date
CN101065515B (zh) 2010-05-26
JP5015002B2 (ja) 2012-08-29
US7459396B2 (en) 2008-12-02
KR101194888B1 (ko) 2012-10-25
US7638002B2 (en) 2009-12-29
US20070032079A1 (en) 2007-02-08
US20060112882A1 (en) 2006-06-01
KR20070089785A (ko) 2007-09-03
CN101065516A (zh) 2007-10-31
CN101065516B (zh) 2010-12-01
EP1863950A1 (en) 2007-12-12
WO2006058310A1 (en) 2006-06-01
EP1863950B1 (en) 2011-05-18
CN101065515A (zh) 2007-10-31
TW200629376A (en) 2006-08-16
TWI300956B (en) 2008-09-11
JP2008522033A (ja) 2008-06-26

Similar Documents

Publication Publication Date Title
ATE510043T1 (de) Mehrkammerfilmvorläufer-verdunstungssystem und dünnfilmauftragungssystem damit
TW200746303A (en) Film precursor evaporation system and method of using
WO2011017501A3 (en) Cvd apparatus
TW200630504A (en) Chemical vapor deposition reactor having multiple inlets
TW200733202A (en) Vopor phase deposition apparatus and support table
TW200730649A (en) Evaporation source and method of depositing thin film using the same
TW200619415A (en) Multi-gas distribution injector for chemical vapor deposition reactors
US9334566B2 (en) Multi-tray ballast vapor draw systems
TW200714740A (en) Method for the vaporization of liquid raw material which enables low-temperature vaporization of liquid raw material and vaporizer for the method
TW200728498A (en) CVD reactor with glidable holder on a substrate base
TW201000671A (en) Batch type atomic layer deposition apparatus
WO2005081283A3 (en) Substrate support system for reduced autodoping and backside deposition
JP2018505551A5 (Direct)
JP2008522033A5 (Direct)
JP6606547B2 (ja) 複数の液体または固体の原材料からｃｖｄまたはｐｖｄ装置のために蒸気を生成する蒸気発生装置および蒸気発生方法
TW201001594A (en) Gas feeding device, treating device, treating method, and storage medium
JP2009533556A5 (Direct)
WO2005010227A3 (en) Chemical vapor deposition reactor
TW200739727A (en) Semiconductor processing system and vaporizer
DK1753330T3 (da) Forbedret låg til beholdere til tilberedning af madvarer
EP4631531A3 (en) Biological indicator
TW200510555A (en) Vacuum film forming method and device, and filter produced by using them
KR101591487B1 (ko) 전구체 기화기
TW200629463A (en) Replaceable precursor tray for use in a multi-tray solid precursor delivery system
TW200710291A (en) Vapor phase growing apparatus and vapor phase growing method

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties