ATE508393T1 - Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur - Google Patents

Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur

Info

Publication number
ATE508393T1
ATE508393T1 AT05809661T AT05809661T ATE508393T1 AT E508393 T1 ATE508393 T1 AT E508393T1 AT 05809661 T AT05809661 T AT 05809661T AT 05809661 T AT05809661 T AT 05809661T AT E508393 T1 ATE508393 T1 AT E508393T1
Authority
AT
Austria
Prior art keywords
antireflection film
producing
composition
forming
meth
Prior art date
Application number
AT05809661T
Other languages
English (en)
Inventor
Nakaatsu Yoshimura
Keiji Konno
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Application granted granted Critical
Publication of ATE508393T1 publication Critical patent/ATE508393T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Laminated Bodies (AREA)
AT05809661T 2004-12-03 2005-11-28 Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur ATE508393T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004350632 2004-12-03
PCT/JP2005/021756 WO2006059555A1 (ja) 2004-12-03 2005-11-28 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法

Publications (1)

Publication Number Publication Date
ATE508393T1 true ATE508393T1 (de) 2011-05-15

Family

ID=36564988

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05809661T ATE508393T1 (de) 2004-12-03 2005-11-28 Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur

Country Status (9)

Country Link
US (1) US7709182B2 (de)
EP (1) EP1818723B1 (de)
JP (1) JP4525683B2 (de)
KR (1) KR100966197B1 (de)
CN (1) CN101080674B (de)
AT (1) ATE508393T1 (de)
DE (1) DE602005027888D1 (de)
TW (1) TWI383264B (de)
WO (1) WO2006059555A1 (de)

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US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
EP2078983B1 (de) * 2006-10-13 2012-01-04 JSR Corporation Zusammensetzung zur bildung eines oberschichtfilms und verfahren zur bildung einer fotoresiststruktur
JP5229228B2 (ja) * 2007-09-26 2013-07-03 Ｊｓｒ株式会社 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法
KR101357611B1 (ko) * 2008-01-31 2014-02-03 주식회사 동진쎄미켐 에칭률이 우수한 유기 반사방지막 형성용 중합체 및 이를포함하는 조성물
JP5228792B2 (ja) * 2008-10-23 2013-07-03 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及び上層反射防止膜
JP2010128136A (ja) * 2008-11-27 2010-06-10 Jsr Corp 上層反射防止膜形成用組成物、上層反射防止膜及びパターン形成方法
JP5177418B2 (ja) * 2008-12-12 2013-04-03 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JPWO2011049091A1 (ja) * 2009-10-22 2013-03-14 三菱瓦斯化学株式会社 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
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US9165782B2 (en) * 2011-10-20 2015-10-20 Nissan Chemical Industries, Ltd. Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same
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CN105940348B (zh) * 2014-02-12 2019-12-06 日产化学工业株式会社 包含含有氟的表面活性剂的膜形成用组合物

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Also Published As

Publication number Publication date
TW200641541A (en) 2006-12-01
DE602005027888D1 (de) 2011-06-16
US20080124524A1 (en) 2008-05-29
EP1818723A4 (de) 2009-07-01
EP1818723A1 (de) 2007-08-15
JP4525683B2 (ja) 2010-08-18
KR20070086151A (ko) 2007-08-27
TWI383264B (zh) 2013-01-21
CN101080674A (zh) 2007-11-28
US7709182B2 (en) 2010-05-04
CN101080674B (zh) 2013-09-18
WO2006059555A1 (ja) 2006-06-08
EP1818723B1 (de) 2011-05-04
KR100966197B1 (ko) 2010-06-25
JPWO2006059555A1 (ja) 2008-08-07

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