ATE496394T1 - Mos-vorrichtung und verfahren zu seiner herstellung - Google Patents

Mos-vorrichtung und verfahren zu seiner herstellung

Info

Publication number
ATE496394T1
ATE496394T1 AT07700658T AT07700658T ATE496394T1 AT E496394 T1 ATE496394 T1 AT E496394T1 AT 07700658 T AT07700658 T AT 07700658T AT 07700658 T AT07700658 T AT 07700658T AT E496394 T1 ATE496394 T1 AT E496394T1
Authority
AT
Austria
Prior art keywords
gate
region
semiconductor region
mos device
semiconductor
Prior art date
Application number
AT07700658T
Other languages
English (en)
Inventor
Sebastien Nuttinck
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE496394T1 publication Critical patent/ATE496394T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7856—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with an non-uniform gate, e.g. varying doping structure, shape or composition on different sides of the fin, or different gate insulator thickness or composition on opposing fin sides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
AT07700658T 2006-01-30 2007-01-22 Mos-vorrichtung und verfahren zu seiner herstellung ATE496394T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06101021 2006-01-30
PCT/IB2007/050211 WO2007085996A2 (en) 2006-01-30 2007-01-22 Mos device and method of fabricating a mos device

Publications (1)

Publication Number Publication Date
ATE496394T1 true ATE496394T1 (de) 2011-02-15

Family

ID=38309588

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07700658T ATE496394T1 (de) 2006-01-30 2007-01-22 Mos-vorrichtung und verfahren zu seiner herstellung

Country Status (8)

Country Link
US (1) US8093659B2 (de)
EP (1) EP1982357B1 (de)
JP (1) JP2009523320A (de)
CN (1) CN101375399B (de)
AT (1) ATE496394T1 (de)
DE (1) DE602007012054D1 (de)
TW (1) TW200735357A (de)
WO (1) WO2007085996A2 (de)

Families Citing this family (14)

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Publication number Priority date Publication date Assignee Title
US8110467B2 (en) * 2009-04-21 2012-02-07 International Business Machines Corporation Multiple Vt field-effect transistor devices
US8294511B2 (en) * 2010-11-19 2012-10-23 Micron Technology, Inc. Vertically stacked fin transistors and methods of fabricating and operating the same
US9553193B2 (en) 2010-11-19 2017-01-24 Micron Technology, Inc. Double gated fin transistors and methods of fabricating and operating the same
FR3016237B1 (fr) 2014-01-07 2017-06-09 Commissariat Energie Atomique Dispositif a nanofils de semi-conducteur partiellement entoures par une grille
US9224736B1 (en) * 2014-06-27 2015-12-29 Taiwan Semicondcutor Manufacturing Company, Ltd. Structure and method for SRAM FinFET device
CN104916587A (zh) * 2015-05-06 2015-09-16 深圳市海泰康微电子有限公司 用于高密度集成电路设计的半导体器件及其制备方法
US9356027B1 (en) 2015-05-11 2016-05-31 International Business Machines Corporation Dual work function integration for stacked FinFET
US9659963B2 (en) 2015-06-29 2017-05-23 International Business Machines Corporation Contact formation to 3D monolithic stacked FinFETs
US10084090B2 (en) 2015-11-09 2018-09-25 International Business Machines Corporation Method and structure of stacked FinFET
EP3394899A4 (de) 2015-12-26 2019-07-31 Intel Corporation Mit gestapelten transistoren mit gemeinsam genutztem common-gate aufgebaute dynamische logik
CN106952814A (zh) * 2016-01-06 2017-07-14 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN107452793B (zh) * 2016-06-01 2020-07-28 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
US11075119B2 (en) 2017-03-30 2021-07-27 Intel Corporation Vertically stacked transistors in a pin
EP3660891B1 (de) 2018-11-27 2023-06-07 IMEC vzw Verfahren zur herstellung eines halbleiterbauelements

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288431B1 (en) * 1997-04-04 2001-09-11 Nippon Steel Corporation Semiconductor device and a method of manufacturing the same
KR20030041974A (ko) * 2000-08-24 2003-05-27 코바 테크놀로지스, 인크. 단일 트랜지스터 희토류 망가나이트 강유전성 비휘발성메모리 셀
US6750487B2 (en) * 2002-04-11 2004-06-15 International Business Machines Corporation Dual double gate transistor
US6911697B1 (en) 2003-08-04 2005-06-28 Advanced Micro Devices, Inc. Semiconductor device having a thin fin and raised source/drain areas
FR2861501B1 (fr) * 2003-10-22 2006-01-13 Commissariat Energie Atomique Dispositif microelectronique a effet de champ apte a former un ou plusiseurs canaux de transistors
US6974983B1 (en) * 2004-02-02 2005-12-13 Advanced Micro Devices, Inc. Isolated FinFET P-channel/N-channel transistor pair
US6894337B1 (en) * 2004-02-02 2005-05-17 Advanced Micro Devices, Inc. System and method for forming stacked fin structure using metal-induced-crystallization
US7098477B2 (en) 2004-04-23 2006-08-29 International Business Machines Corporation Structure and method of manufacturing a finFET device having stacked fins
JP2005354023A (ja) * 2004-05-14 2005-12-22 Seiko Epson Corp 半導体装置および半導体装置の製造方法
US7968394B2 (en) * 2005-12-16 2011-06-28 Freescale Semiconductor, Inc. Transistor with immersed contacts and methods of forming thereof

Also Published As

Publication number Publication date
CN101375399B (zh) 2010-09-01
DE602007012054D1 (de) 2011-03-03
CN101375399A (zh) 2009-02-25
EP1982357B1 (de) 2011-01-19
WO2007085996A2 (en) 2007-08-02
JP2009523320A (ja) 2009-06-18
EP1982357A2 (de) 2008-10-22
US8093659B2 (en) 2012-01-10
TW200735357A (en) 2007-09-16
US20100219479A1 (en) 2010-09-02
WO2007085996A3 (en) 2007-11-22

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