ATE494401T1 - Stabilisatoren, um die polymerisation substituierter cyclotetrasiloxane zu verhindern - Google Patents

Stabilisatoren, um die polymerisation substituierter cyclotetrasiloxane zu verhindern

Info

Publication number
ATE494401T1
ATE494401T1 AT04014368T AT04014368T ATE494401T1 AT E494401 T1 ATE494401 T1 AT E494401T1 AT 04014368 T AT04014368 T AT 04014368T AT 04014368 T AT04014368 T AT 04014368T AT E494401 T1 ATE494401 T1 AT E494401T1
Authority
AT
Austria
Prior art keywords
cyclotetrasiloxane
stabilizers
stabilizing
vapor deposition
chemical vapor
Prior art date
Application number
AT04014368T
Other languages
English (en)
Inventor
Steven Gerard Mayorga
Manchao Xiao
Thomas Richard Gaffney
Robert George Syvret
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE494401T1 publication Critical patent/ATE494401T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/20—Purification, separation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/13—Phenols; Phenolates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT04014368T 2003-06-23 2004-06-18 Stabilisatoren, um die polymerisation substituierter cyclotetrasiloxane zu verhindern ATE494401T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/602,279 US7101948B2 (en) 2001-12-21 2003-06-23 Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane

Publications (1)

Publication Number Publication Date
ATE494401T1 true ATE494401T1 (de) 2011-01-15

Family

ID=33418623

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04014368T ATE494401T1 (de) 2003-06-23 2004-06-18 Stabilisatoren, um die polymerisation substituierter cyclotetrasiloxane zu verhindern

Country Status (9)

Country Link
US (2) US7101948B2 (de)
EP (1) EP1491655B1 (de)
JP (2) JP4447973B2 (de)
KR (1) KR100645346B1 (de)
CN (1) CN1308333C (de)
AT (1) ATE494401T1 (de)
DE (1) DE602004030859D1 (de)
SG (1) SG117496A1 (de)
TW (1) TWI247755B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7108771B2 (en) * 2001-12-13 2006-09-19 Advanced Technology Materials, Inc. Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
US7456488B2 (en) * 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US20080042105A1 (en) 2001-12-21 2008-02-21 Air Products And Chemicals, Inc. Stabilizers To Inhibit The Polymerization of Substituted Cyclotetrasiloxane
US7101948B2 (en) * 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
WO2004027110A2 (en) * 2002-09-18 2004-04-01 Arch Specialty Chemicals, Inc. Additives to prevent degradation of alkyl-hydrogen siloxanes
US7931823B2 (en) * 2005-09-12 2011-04-26 Fujifilm Electronic Materials U.S.A., Inc. Additives to prevent degradation of cyclic alkene derivatives
WO2007033075A2 (en) * 2005-09-12 2007-03-22 Fujifilm Electronic Materials U.S.A., Inc. Additives to prevent degradation of cyclic alkene derivatives
US8053375B1 (en) 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US20080141901A1 (en) * 2006-12-18 2008-06-19 American Air Liquide, Inc. Additives to stabilize cyclotetrasiloxane and its derivatives
RU2461584C2 (ru) * 2007-03-12 2012-09-20 Байер Ой Применение токоферола
FR2926297B1 (fr) 2008-01-10 2013-03-08 Centre Nat Rech Scient Molecules chimiques inhibitrices du mecanisme d'epissage pour traiter des maladies resultant d'anomalies d'epissage.
CN102047395A (zh) * 2008-05-29 2011-05-04 瑞萨电子株式会社 制造硅烷化多孔绝缘膜的方法、制造半导体装置的方法和硅烷化材料
KR101658493B1 (ko) 2008-07-08 2016-09-21 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 환형 알켄 유도체의 분해 방지용 첨가제
DE102008041601A1 (de) * 2008-08-27 2010-03-04 Evonik Goldschmidt Gmbh Verfahren zur Herstellung verzweigter SiH-funtioneller Polysiloxane und deren Verwendung zur Herstellung flüssiger, SiC- oder SiOC-verknüpfter, verzweigter organomodifizierter Polysiloxane
JP2010153649A (ja) * 2008-12-25 2010-07-08 Tosoh Corp 環状シロキサン組成物および薄膜
EP2505198A1 (de) 2011-04-01 2012-10-03 Société Splicos Verbindungen zur Verwendung als Therapiemittel mit Beeinträchtigung der p53-Expression und/oder -Aktivität
DE102011121356A1 (de) * 2011-12-19 2013-06-20 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung von synthetischem Quarzglas
KR102103805B1 (ko) * 2017-06-05 2020-05-29 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
GB2579405B (en) 2018-11-30 2022-09-14 Si Group Switzerland Chaa Gmbh Antioxidant compositions
CN109796955B (zh) * 2019-01-30 2020-12-25 中国石油大学(华东) 一种梯形支链改性硅氧烷聚合物超临界二氧化碳增稠剂的制备方法
CN116157552B (zh) 2020-07-24 2025-10-17 弗萨姆材料美国有限责任公司 环硅氧烷和由其制备的膜

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2837550A (en) 1955-05-18 1958-06-03 Gen Electric Hydroxyalkylcyclopolysiloxanes
US3344111A (en) 1966-09-28 1967-09-26 Gen Electric Preparation of stable copolymerizable organosilicon compositions containing a platinum catalyst and an acrylonitrile type compound
US3882083A (en) 1973-11-21 1975-05-06 Gen Electric Latent addition curable organopolysiloxane compositions
US3998865A (en) 1975-03-12 1976-12-21 General Electric Company Process for the stabilization of hexamethyl-cyclotrisiloxane and the stabilized compositions resulting therefrom
EP0132469A1 (de) 1983-07-29 1985-02-13 John W. Fenton Rotationsmotor
US5028566A (en) 1987-04-10 1991-07-02 Air Products And Chemicals, Inc. Method of forming silicon dioxide glass films
JP2647243B2 (ja) * 1990-09-19 1997-08-27 東燃株式会社 γ―メタクリロキシプロピルシラン化合物の製造方法
US5118735A (en) * 1990-10-05 1992-06-02 Hercules Incorporated Organosilicon composition comprising stabilizers
JPH05118735A (ja) * 1991-10-29 1993-05-14 Sanyo Electric Co Ltd ドレン水蒸発装置
JP3111804B2 (ja) * 1994-04-25 2000-11-27 信越化学工業株式会社 シリコーンゴム組成物
DE69416492T2 (de) 1993-11-18 1999-07-22 Shin-Etsu Chemical Co., Ltd., Tokio/Tokyo Härtungskontrolle von Silikongummizusammensetzungen
JP2938734B2 (ja) 1993-11-26 1999-08-25 信越化学工業株式会社 低分子量ポリメチルシクロポリシロキサンの安定化方法
US5380812A (en) 1994-01-10 1995-01-10 Dow Corning Corporation One part curable compositions containing deactivated hydrosilation catalyst and method for preparing same
JPH08143778A (ja) * 1994-11-18 1996-06-04 Kanegafuchi Chem Ind Co Ltd ヒドロシリル化法及びそれを利用した硬化剤の製造方法
CN1232436A (zh) 1996-10-08 1999-10-20 康宁股份有限公司 抑制硅氧烷原料胶凝的方法和抑制胶凝的原料
DE69729663T2 (de) * 1996-12-16 2005-07-07 The Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Kanüle mit stumpfen ende und zugangszapfen
US6368359B1 (en) 1999-12-17 2002-04-09 General Electric Company Process for stabilization of dry cleaning solutions
JP4272424B2 (ja) 2000-10-25 2009-06-03 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体素子のレベル内またはレベル間誘電体としての超低誘電率材料、その製造方法、およびそれを含む電子デバイス
US7423166B2 (en) 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7101948B2 (en) * 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
US6858697B2 (en) 2001-12-21 2005-02-22 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
WO2004027110A2 (en) 2002-09-18 2004-04-01 Arch Specialty Chemicals, Inc. Additives to prevent degradation of alkyl-hydrogen siloxanes

Also Published As

Publication number Publication date
US7101948B2 (en) 2006-09-05
TWI247755B (en) 2006-01-21
CN1590390A (zh) 2005-03-09
JP2010065039A (ja) 2010-03-25
EP1491655A2 (de) 2004-12-29
JP5491123B2 (ja) 2014-05-14
JP4447973B2 (ja) 2010-04-07
EP1491655A3 (de) 2007-06-20
US20060252904A1 (en) 2006-11-09
TW200500381A (en) 2005-01-01
US7300995B2 (en) 2007-11-27
EP1491655B1 (de) 2011-01-05
JP2005089448A (ja) 2005-04-07
DE602004030859D1 (de) 2011-02-17
KR20050000322A (ko) 2005-01-03
US20040054114A1 (en) 2004-03-18
SG117496A1 (en) 2005-12-29
CN1308333C (zh) 2007-04-04
KR100645346B1 (ko) 2006-11-15

Similar Documents

Publication Publication Date Title
DE602004030859D1 (de) Stabilisatoren, um die Polymerisation substituierter Cyclotetrasiloxane zu verhindern
ATE321058T1 (de) Stabilisatoren als polymerisationsinhibitoren von substituierten cyclotetrasiloxanen
KR960014412A (ko) 표면의 수분 제거 및 안정화 방법
TW369617B (en) Plastic articles for medical use
NO20005461D0 (no) Nye fettsyreanaloger for behandling av overvekt, høyt blodtrykk og fettlever
DE60213452D1 (de) Metallocene und verfahren zur herstellung von propylenpolymeren
TW200508801A (en) Silicon-containing polymer, resist composition and patterning process
TW200631942A (en) The oxime ester compounds and the initiator of the photo-polymerization comprising the same
MY130411A (en) Piperidine derivatives
TW200617086A (en) Curable resin composition, curable film and cured film
ATE328037T1 (de) Polyolefinzusammensetzung mit hoher fliessfähigkeit
TW200801062A (en) Epoxy resin molding material for sealing and device of electronic part
TW200601425A (en) Cleaning composition for semiconductor components, and process for manufacturing semiconductor device
TW200508366A (en) Perfluoroallyloxy compound and liquid crystal composition containing the compound
ATE143976T1 (de) Verfahren zur silylierung von kohlenhydraten und verwendung der silylierten kohlenhydrate
ATE391307T1 (de) Photothermographisches material
ES2102946A1 (es) Recubrimientos estabilizados contra el deterioro causado por la luz, el calor y el oxigeno.
WO1999062960A1 (en) Flame-retardant uv curable silicone compositions
TW200712781A (en) Antireflective hardmask composition and methods for using same
US7678842B2 (en) Radiation-curable silicone rubber composition
WO2002008161A2 (en) Polymerization inhibitor for vinyl-containing materials
EP1493765A4 (de) Organische polymere mit epoxy- und/oder oxetanylgruppenhaltigen siliciumendgruppen und herstellungsverfahren dafür
SG152148A1 (en) Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
FI952848A0 (fi) Epoksialkyyliakrylaattiyhdisteellä oksastetut polypropyleeniaineet
JP3618951B2 (ja) 光硬化性オルガノポリシロキサン組成物

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties