ATE494401T1 - Stabilisatoren, um die polymerisation substituierter cyclotetrasiloxane zu verhindern - Google Patents

Stabilisatoren, um die polymerisation substituierter cyclotetrasiloxane zu verhindern

Info

Publication number
ATE494401T1
ATE494401T1 AT04014368T AT04014368T ATE494401T1 AT E494401 T1 ATE494401 T1 AT E494401T1 AT 04014368 T AT04014368 T AT 04014368T AT 04014368 T AT04014368 T AT 04014368T AT E494401 T1 ATE494401 T1 AT E494401T1
Authority
AT
Austria
Prior art keywords
cyclotetrasiloxane
stabilizers
stabilizing
vapor deposition
chemical vapor
Prior art date
Application number
AT04014368T
Other languages
English (en)
Inventor
Steven Gerard Mayorga
Manchao Xiao
Thomas Richard Gaffney
Robert George Syvret
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE494401T1 publication Critical patent/ATE494401T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/20—Purification, separation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/13—Phenols; Phenolates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT04014368T 2003-06-23 2004-06-18 Stabilisatoren, um die polymerisation substituierter cyclotetrasiloxane zu verhindern ATE494401T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/602,279 US7101948B2 (en) 2001-12-21 2003-06-23 Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane

Publications (1)

Publication Number Publication Date
ATE494401T1 true ATE494401T1 (de) 2011-01-15

Family

ID=33418623

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04014368T ATE494401T1 (de) 2003-06-23 2004-06-18 Stabilisatoren, um die polymerisation substituierter cyclotetrasiloxane zu verhindern

Country Status (9)

Country Link
US (2) US7101948B2 (de)
EP (1) EP1491655B1 (de)
JP (2) JP4447973B2 (de)
KR (1) KR100645346B1 (de)
CN (1) CN1308333C (de)
AT (1) ATE494401T1 (de)
DE (1) DE602004030859D1 (de)
SG (1) SG117496A1 (de)
TW (1) TWI247755B (de)

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US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7456488B2 (en) * 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US20080042105A1 (en) * 2001-12-21 2008-02-21 Air Products And Chemicals, Inc. Stabilizers To Inhibit The Polymerization of Substituted Cyclotetrasiloxane
US7101948B2 (en) * 2001-12-21 2006-09-05 Air Products And Chemicals, Inc. Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
US7129311B2 (en) * 2002-09-18 2006-10-31 Arch Specialty Chemicals, Inc. Additives to prevent degradation of alkyl-hydrogen siloxanes
SG165359A1 (en) * 2005-09-12 2010-10-28 Fujifilm Electronic Materials Additives to prevent degradation of cyclic alkene derivatives
KR101409887B1 (ko) * 2005-09-12 2014-06-20 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 사이클릭 알켄 유도체의 분해를 방지하기 위한 첨가제
US8053375B1 (en) 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US20080141901A1 (en) * 2006-12-18 2008-06-19 American Air Liquide, Inc. Additives to stabilize cyclotetrasiloxane and its derivatives
KR101484509B1 (ko) * 2007-03-12 2015-01-21 베이어 오와이 토코페롤을 사용하는 방법
FR2926297B1 (fr) * 2008-01-10 2013-03-08 Centre Nat Rech Scient Molecules chimiques inhibitrices du mecanisme d'epissage pour traiter des maladies resultant d'anomalies d'epissage.
JPWO2009144920A1 (ja) * 2008-05-29 2011-10-06 ルネサスエレクトロニクス株式会社 シリル化多孔質絶縁膜の製造方法、半導体装置の製造方法、およびシリル化材料
CN102089405B (zh) 2008-07-08 2013-10-16 富士胶片电子材料美国有限公司 防止环烯烃衍生物降解的添加剂
DE102008041601A1 (de) * 2008-08-27 2010-03-04 Evonik Goldschmidt Gmbh Verfahren zur Herstellung verzweigter SiH-funtioneller Polysiloxane und deren Verwendung zur Herstellung flüssiger, SiC- oder SiOC-verknüpfter, verzweigter organomodifizierter Polysiloxane
JP2010153649A (ja) * 2008-12-25 2010-07-08 Tosoh Corp 環状シロキサン組成物および薄膜
EP2505198A1 (de) 2011-04-01 2012-10-03 Société Splicos Verbindungen zur Verwendung als Therapiemittel mit Beeinträchtigung der p53-Expression und/oder -Aktivität
DE102011121356A1 (de) * 2011-12-19 2013-06-20 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung von synthetischem Quarzglas
KR102103805B1 (ko) * 2017-06-05 2020-05-29 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
GB2579405B (en) 2018-11-30 2022-09-14 Si Group Switzerland Chaa Gmbh Antioxidant compositions
CN109796955B (zh) * 2019-01-30 2020-12-25 中国石油大学(华东) 一种梯形支链改性硅氧烷聚合物超临界二氧化碳增稠剂的制备方法
TW202448908A (zh) 2020-07-24 2024-12-16 美商慧盛材料美國責任有限公司 環矽氧烷及以其製造的膜及含矽膜之沉積方法

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Also Published As

Publication number Publication date
KR100645346B1 (ko) 2006-11-15
US7101948B2 (en) 2006-09-05
US20040054114A1 (en) 2004-03-18
EP1491655B1 (de) 2011-01-05
US20060252904A1 (en) 2006-11-09
KR20050000322A (ko) 2005-01-03
JP5491123B2 (ja) 2014-05-14
US7300995B2 (en) 2007-11-27
TWI247755B (en) 2006-01-21
CN1590390A (zh) 2005-03-09
JP2010065039A (ja) 2010-03-25
EP1491655A3 (de) 2007-06-20
JP4447973B2 (ja) 2010-04-07
SG117496A1 (en) 2005-12-29
JP2005089448A (ja) 2005-04-07
CN1308333C (zh) 2007-04-04
DE602004030859D1 (de) 2011-02-17
TW200500381A (en) 2005-01-01
EP1491655A2 (de) 2004-12-29

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