ATE493279T1 - Verfahren zur behandlung eines substrats - Google Patents

Verfahren zur behandlung eines substrats

Info

Publication number
ATE493279T1
ATE493279T1 AT99928707T AT99928707T ATE493279T1 AT E493279 T1 ATE493279 T1 AT E493279T1 AT 99928707 T AT99928707 T AT 99928707T AT 99928707 T AT99928707 T AT 99928707T AT E493279 T1 ATE493279 T1 AT E493279T1
Authority
AT
Austria
Prior art keywords
substrate
gas
binder phase
treating
phase
Prior art date
Application number
AT99928707T
Other languages
German (de)
English (en)
Inventor
Roy Leverenz
John Bost
Original Assignee
Tdy Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tdy Ind Inc filed Critical Tdy Ind Inc
Application granted granted Critical
Publication of ATE493279T1 publication Critical patent/ATE493279T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
AT99928707T 1999-06-16 1999-06-16 Verfahren zur behandlung eines substrats ATE493279T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1999/013569 WO2000076783A1 (en) 1999-06-16 1999-06-16 Substrate treatment method

Publications (1)

Publication Number Publication Date
ATE493279T1 true ATE493279T1 (de) 2011-01-15

Family

ID=22272982

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99928707T ATE493279T1 (de) 1999-06-16 1999-06-16 Verfahren zur behandlung eines substrats

Country Status (12)

Country Link
EP (1) EP1192050B1 (ja)
JP (1) JP4824232B2 (ja)
KR (1) KR100627934B1 (ja)
CN (1) CN1186213C (ja)
AT (1) ATE493279T1 (ja)
AU (1) AU761003B2 (ja)
DE (1) DE69943094D1 (ja)
DK (1) DK1192050T3 (ja)
ES (1) ES2385998T3 (ja)
PT (1) PT1192050E (ja)
TW (1) TW567234B (ja)
WO (1) WO2000076783A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6635340B2 (ja) * 2016-08-24 2020-01-22 住友電工ハードメタル株式会社 表面被覆切削工具およびその製造方法
CN108677195B (zh) * 2018-05-09 2020-07-24 深圳市长盈精密技术股份有限公司 粘胶金属的脱胶方法
CN109518139B (zh) * 2018-12-13 2021-02-26 北京金轮坤天特种机械有限公司 一种钛火阻燃涂层及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4615763A (en) * 1985-01-02 1986-10-07 International Business Machines Corporation Roughening surface of a substrate
US5419927A (en) * 1988-09-26 1995-05-30 Chromalloy Gas Turbine Corporation Process for coating fiber reinforced ceramic composites
JPH0288782A (ja) * 1988-09-27 1990-03-28 Hitachi Ltd ダイヤモンドコーテイング部材の製造法
SE9101865D0 (sv) * 1991-06-17 1991-06-17 Sandvik Ab Titanbaserad karbonitridlegering med slitstarkt ytskikt
AT400041B (de) * 1993-03-26 1995-09-25 Plansee Tizit Gmbh Hartmetall-substrat mit diamantschicht hoher haftfestigkeit
JP3417986B2 (ja) * 1993-10-07 2003-06-16 東芝タンガロイ株式会社 付着性に優れた被覆物体の製造方法
JPH07243064A (ja) * 1994-01-03 1995-09-19 Xerox Corp 基板清掃方法
US5560839A (en) * 1994-06-27 1996-10-01 Valenite Inc. Methods of preparing cemented metal carbide substrates for deposition of adherent diamond coatings and products made therefrom
US5635256A (en) * 1994-08-11 1997-06-03 St. Gobain/Norton Industrial Ceramics Corporation Method of making a diamond-coated composite body
US5891522A (en) * 1995-05-24 1999-04-06 Saint-Gobain Industrial Ceramics, Inc. Composite article with adherent CVD diamond coating and method of making
US5700518A (en) * 1996-04-26 1997-12-23 Korea Institute Of Science And Technology Fabrication method for diamond-coated cemented carbide cutting tool
JPH11140623A (ja) * 1997-11-12 1999-05-25 Hitachi Tool Eng Ltd 被覆硬質合金の製造方法

Also Published As

Publication number Publication date
PT1192050E (pt) 2011-02-11
JP4824232B2 (ja) 2011-11-30
EP1192050B1 (en) 2010-12-29
ES2385998T3 (es) 2012-08-07
TW567234B (en) 2003-12-21
EP1192050A4 (en) 2006-12-06
AU761003B2 (en) 2003-05-29
WO2000076783A1 (en) 2000-12-21
CN1318015A (zh) 2001-10-17
AU4570899A (en) 2001-01-02
KR100627934B1 (ko) 2006-09-22
CN1186213C (zh) 2005-01-26
DK1192050T3 (da) 2011-03-14
KR20010108012A (ko) 2001-12-07
JP2003522290A (ja) 2003-07-22
EP1192050A1 (en) 2002-04-03
DE69943094D1 (de) 2011-02-10

Similar Documents

Publication Publication Date Title
ATE458273T1 (de) Verfahren zur ätzung eines substrats
ATE341099T1 (de) Verfahren zur anisotropen ätzung von substraten
WO2003068373A3 (en) Micro-fluidic anti-microbial filter
DE69909248D1 (de) Verfahren zur verminderung der erosion einer maske während eines plasmaätzens
DE69736969D1 (de) Verfahren zur Behandlung der Oberfläche von halbleitenden Substraten
DE69934986D1 (de) Verfahren für anisotropes ätzen
EP0805485A3 (en) Method for plasma etching dielectric layers with high selectivity and low microloading effect
ATE331298T1 (de) Verbesserte methode eine oxidschicht zu ätzen
ATE502893T1 (de) Ätzverfahren mit verwendung eines opfersubstrats
ATE350131T1 (de) Verfahren zur behandlung von fluida
DE69517988D1 (de) Selektive entfernung von material durch bestrahlung
SE0003345D0 (sv) Sätt vid etsning av ett substrat
NO20020065L (no) Strömningsfeltplater
WO2004111727A3 (en) Methods of removing photoresist from substrates
ATE219291T1 (de) Verfahren und vorrichtung zum trocknen von substraten
ATE236079T1 (de) Verfahren zur abscheidung von chlorsilanen aus gasströmen
ATE493279T1 (de) Verfahren zur behandlung eines substrats
ATE399838T1 (de) Phosphat-fluortenside zur verwendung in kohlendioxid
GB2381383A (en) Method for topographical patterning of a device
ATE431964T1 (de) In-situ nachätzungs prozess zur entfernung von photoresist und seitenwandspassivierungsrückständen
WO2004073025A3 (en) Methods of reducing photoresist distortion while etching in a plasma processing system
TW200722909A (en) Method of forming etching mask
MY127988A (en) Substrate treatment method
KR950021200A (ko) 포토레지스트 제거 방법
ATE353475T1 (de) Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche