ATE489657T1 - Chemisch verstärkte lichtempfindliche harzzusammensetzung zur herstellung eines dickfilms oder ultradickfilms - Google Patents

Chemisch verstärkte lichtempfindliche harzzusammensetzung zur herstellung eines dickfilms oder ultradickfilms

Info

Publication number
ATE489657T1
ATE489657T1 AT04773036T AT04773036T ATE489657T1 AT E489657 T1 ATE489657 T1 AT E489657T1 AT 04773036 T AT04773036 T AT 04773036T AT 04773036 T AT04773036 T AT 04773036T AT E489657 T1 ATE489657 T1 AT E489657T1
Authority
AT
Austria
Prior art keywords
thick film
resin composition
photosensitive resin
alkali
film
Prior art date
Application number
AT04773036T
Other languages
English (en)
Inventor
Toshimichi Makii
Yoshinori Nishiwaki
Kazumichi Akashi
Original Assignee
Az Electronic Materials Japan
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan, Az Electronic Materials Usa filed Critical Az Electronic Materials Japan
Application granted granted Critical
Publication of ATE489657T1 publication Critical patent/ATE489657T1/de

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Polymerisation Methods In General (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
AT04773036T 2003-10-31 2004-09-14 Chemisch verstärkte lichtempfindliche harzzusammensetzung zur herstellung eines dickfilms oder ultradickfilms ATE489657T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003373069A JP4440600B2 (ja) 2003-10-31 2003-10-31 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
PCT/JP2004/013354 WO2005043247A1 (ja) 2003-10-31 2004-09-14 厚膜および超厚膜対応化学増幅型感光性樹脂組成物

Publications (1)

Publication Number Publication Date
ATE489657T1 true ATE489657T1 (de) 2010-12-15

Family

ID=34544068

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04773036T ATE489657T1 (de) 2003-10-31 2004-09-14 Chemisch verstärkte lichtempfindliche harzzusammensetzung zur herstellung eines dickfilms oder ultradickfilms

Country Status (9)

Country Link
US (1) US20070072109A1 (de)
EP (1) EP1688793B1 (de)
JP (1) JP4440600B2 (de)
CN (1) CN1875323B (de)
AT (1) ATE489657T1 (de)
DE (1) DE602004030276D1 (de)
MY (1) MY146544A (de)
TW (1) TWI307825B (de)
WO (1) WO2005043247A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8808976B2 (en) 2005-06-13 2014-08-19 Tokuyama Corporation Photoresist developer and method for fabricating substrate by using the developer thereof
US7255970B2 (en) 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
KR101838477B1 (ko) * 2009-12-16 2018-03-14 닛산 가가쿠 고교 가부시키 가이샤 감광성 레지스트 하층막 형성 조성물
KR20110129692A (ko) * 2010-05-26 2011-12-02 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴의 형성 방법
KR20120107653A (ko) 2011-03-22 2012-10-04 삼성디스플레이 주식회사 감광성 수지 조성물 및 이를 이용한 패턴의 형성 방법
JP2019137612A (ja) * 2018-02-06 2019-08-22 公立大学法人大阪市立大学 化合物、感光性樹脂組成物およびレジスト膜の形成方法
CN118377192A (zh) * 2018-05-24 2024-07-23 默克专利股份有限公司 基于酚醛清漆/dnq的化学增幅型光致抗蚀剂
KR101977886B1 (ko) * 2018-06-18 2019-05-13 영창케미칼 주식회사 패턴 프로파일 개선용 화학증폭형 포지티브 포토레지스트 조성물

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US5648194A (en) * 1995-08-03 1997-07-15 Shipley Company, L.L.C. Photoresist composition comprising an alkali-soluble resin, a quinone diazide compound and a vinyl ether
US5962180A (en) * 1996-03-01 1999-10-05 Jsr Corporation Radiation sensitive composition
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP3528512B2 (ja) * 1996-04-24 2004-05-17 信越化学工業株式会社 架橋基を有する高分子化合物の製造方法
JP3633179B2 (ja) * 1997-01-27 2005-03-30 Jsr株式会社 ポジ型フォトレジスト組成物
JP4159058B2 (ja) * 1997-06-13 2008-10-01 コニカミノルタホールディングス株式会社 画像形成材料及び画像形成方法
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JP2001312060A (ja) * 2000-05-01 2001-11-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物、感光性膜付基板およびレジストパターンの形成方法
JP2001337456A (ja) * 2000-05-25 2001-12-07 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JP3948646B2 (ja) * 2000-08-31 2007-07-25 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP3710717B2 (ja) * 2001-03-06 2005-10-26 東京応化工業株式会社 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法
JP4213366B2 (ja) * 2001-06-12 2009-01-21 Azエレクトロニックマテリアルズ株式会社 厚膜レジストパターンの形成方法
US6911293B2 (en) * 2002-04-11 2005-06-28 Clariant Finance (Bvi) Limited Photoresist compositions comprising acetals and ketals as solvents
JP3966282B2 (ja) * 2002-04-18 2007-08-29 日産化学工業株式会社 ポジ型感光性樹脂組成物およびパターン形成方法
US7317799B2 (en) * 2002-07-19 2008-01-08 Vadium Technology, Inc. Cryptographic key distribution using key folding
US7255972B2 (en) * 2002-10-23 2007-08-14 Az Electronic Materials Usa Corp. Chemically amplified positive photosensitive resin composition

Also Published As

Publication number Publication date
JP4440600B2 (ja) 2010-03-24
TWI307825B (en) 2009-03-21
EP1688793B1 (de) 2010-11-24
DE602004030276D1 (de) 2011-01-05
MY146544A (en) 2012-08-15
EP1688793A4 (de) 2007-02-21
US20070072109A1 (en) 2007-03-29
TW200517782A (en) 2005-06-01
JP2005134800A (ja) 2005-05-26
CN1875323B (zh) 2010-06-16
EP1688793A1 (de) 2006-08-09
WO2005043247A1 (ja) 2005-05-12
CN1875323A (zh) 2006-12-06

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