ATE475180T1 - Registerlesen für flüchtigen speicher - Google Patents

Registerlesen für flüchtigen speicher

Info

Publication number
ATE475180T1
ATE475180T1 AT06736337T AT06736337T ATE475180T1 AT E475180 T1 ATE475180 T1 AT E475180T1 AT 06736337 T AT06736337 T AT 06736337T AT 06736337 T AT06736337 T AT 06736337T AT E475180 T1 ATE475180 T1 AT E475180T1
Authority
AT
Austria
Prior art keywords
read command
register read
data
read
stored
Prior art date
Application number
AT06736337T
Other languages
English (en)
Inventor
Robert Walker
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Application granted granted Critical
Publication of ATE475180T1 publication Critical patent/ATE475180T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40626—Temperature related aspects of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning
AT06736337T 2005-02-14 2006-02-03 Registerlesen für flüchtigen speicher ATE475180T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US65302005P 2005-02-14 2005-02-14
US11/128,829 US7230876B2 (en) 2005-02-14 2005-05-13 Register read for volatile memory
PCT/US2006/006995 WO2006089313A2 (en) 2005-02-14 2006-02-03 Register read for volatile memory

Publications (1)

Publication Number Publication Date
ATE475180T1 true ATE475180T1 (de) 2010-08-15

Family

ID=36587043

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06736337T ATE475180T1 (de) 2005-02-14 2006-02-03 Registerlesen für flüchtigen speicher

Country Status (11)

Country Link
US (2) US7230876B2 (de)
EP (2) EP1849161B1 (de)
JP (3) JP5490361B2 (de)
KR (1) KR100884448B1 (de)
CN (1) CN101156211B (de)
AT (1) ATE475180T1 (de)
BR (1) BRPI0608200A2 (de)
DE (1) DE602006015613D1 (de)
ES (1) ES2393715T3 (de)
IL (1) IL185249A (de)
WO (1) WO2006089313A2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7120084B2 (en) * 2004-06-14 2006-10-10 Marvell International Ltd. Integrated memory controller
US8122187B2 (en) * 2004-07-02 2012-02-21 Qualcomm Incorporated Refreshing dynamic volatile memory
KR20060084071A (ko) * 2005-01-17 2006-07-24 삼성전자주식회사 반도체 메모리에서의 리프레쉬 제어회로 및 그에 따른제어방법
US7640392B2 (en) * 2005-06-23 2009-12-29 Qualcomm Incorporated Non-DRAM indicator and method of accessing data not stored in DRAM array
US7620783B2 (en) * 2005-02-14 2009-11-17 Qualcomm Incorporated Method and apparatus for obtaining memory status information cross-reference to related applications
US7230876B2 (en) 2005-02-14 2007-06-12 Qualcomm Incorporated Register read for volatile memory
US7610455B2 (en) * 2005-05-11 2009-10-27 Infineon Technologies Ag Technique to read special mode register
US9262326B2 (en) * 2006-08-14 2016-02-16 Qualcomm Incorporated Method and apparatus to enable the cooperative signaling of a shared bus interrupt in a multi-rank memory subsystem
US20080056051A1 (en) * 2006-08-31 2008-03-06 Peter Mayer Memory with memory banks and mode registers and method of operating a memory
US7593279B2 (en) * 2006-10-11 2009-09-22 Qualcomm Incorporated Concurrent status register read
KR100919815B1 (ko) * 2008-08-04 2009-10-01 주식회사 하이닉스반도체 반도체 메모리 장치
KR101529675B1 (ko) * 2008-12-26 2015-06-29 삼성전자주식회사 멀티 칩 패키지 메모리 장치
JP5441216B2 (ja) * 2010-02-24 2014-03-12 ルネサスエレクトロニクス株式会社 半導体装置及びデータ処理システム
US8787105B2 (en) * 2012-05-10 2014-07-22 Nanya Technology Corporation Dynamic random access memory with multiple thermal sensors disposed therein and control method thereof
US10050610B2 (en) 2015-03-10 2018-08-14 Qualcomm Incorporated Clock distribution schemes with wide operating voltage ranges
US10223311B2 (en) 2015-03-30 2019-03-05 Samsung Electronics Co., Ltd. Semiconductor memory device for sharing inter-memory command and information, memory system including the same and method of operating the memory system
KR102372888B1 (ko) * 2015-06-15 2022-03-10 삼성전자주식회사 저장 장치의 온도별 데이터 관리 방법
US10395722B2 (en) * 2017-09-29 2019-08-27 Intel Corporation Reading from a mode register having different read and write timing
US10649925B2 (en) 2018-05-16 2020-05-12 Microsoft Technology Licensing, Llc Indirect data return from memory controller logic
US10552087B2 (en) * 2018-06-04 2020-02-04 Micron Technology, Inc. Methods for performing multiple memory operations in response to a single command and memory devices and systems employing the same

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JPH08124380A (ja) * 1994-10-20 1996-05-17 Hitachi Ltd 半導体メモリ及び半導体メモリアクセス方法
JPH08315569A (ja) * 1995-05-16 1996-11-29 Hitachi Ltd 半導体記憶装置、及びデータ処理装置
JP3351953B2 (ja) * 1996-03-19 2002-12-03 富士通株式会社 モードレジスタ制御回路およびこれを有する半導体装置
US5982697A (en) * 1996-12-02 1999-11-09 Micron Technology, Inc. Method for initializing and reprogramming a control operation feature of a memory device
US5784328A (en) * 1996-12-23 1998-07-21 Lsi Logic Corporation Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array
JP3954208B2 (ja) * 1998-08-19 2007-08-08 富士通株式会社 半導体記憶装置
US6401213B1 (en) * 1999-07-09 2002-06-04 Micron Technology, Inc. Timing circuit for high speed memory
JP2002025288A (ja) 2000-06-30 2002-01-25 Hitachi Ltd 半導体集積回路
US6728798B1 (en) * 2000-07-28 2004-04-27 Micron Technology, Inc. Synchronous flash memory with status burst output
US6570804B1 (en) 2000-08-29 2003-05-27 Micron Technology, Inc. Fuse read sequence for auto refresh power reduction
JP2002108691A (ja) * 2000-09-29 2002-04-12 Mitsubishi Electric Corp 半導体記憶装置および半導体記憶装置の制御方法
US6757857B2 (en) * 2001-04-10 2004-06-29 International Business Machines Corporation Alternating current built in self test (AC BIST) with variable data receiver voltage reference for performing high-speed AC memory subsystem self-test
JP4700223B2 (ja) 2001-05-18 2011-06-15 株式会社バッファロー Ｄｒａｍ装置およびｄｒａｍ装置のリフレッシュ方法
US7664903B2 (en) * 2002-02-25 2010-02-16 Solid Access Technologies LLC Control unit with PCI and SCSI buses and computing system with electronic semiconductor disk
JP4366968B2 (ja) 2003-03-25 2009-11-18 ソニー株式会社 温度検出回路および記憶装置
KR100532448B1 (ko) * 2003-07-12 2005-11-30 삼성전자주식회사 메모리의 리프레시 주기를 제어하는 메모리 컨트롤러 및리프레시 주기 제어 방법
US8122187B2 (en) * 2004-07-02 2012-02-21 Qualcomm Incorporated Refreshing dynamic volatile memory
US7230876B2 (en) 2005-02-14 2007-06-12 Qualcomm Incorporated Register read for volatile memory

Also Published As

Publication number Publication date
US20060181957A1 (en) 2006-08-17
BRPI0608200A2 (pt) 2009-12-01
IL185249A (en) 2012-07-31
US20070115744A1 (en) 2007-05-24
EP2234114A1 (de) 2010-09-29
JP5490361B2 (ja) 2014-05-14
CN101156211B (zh) 2013-08-14
KR20070103060A (ko) 2007-10-22
JP2014211939A (ja) 2014-11-13
EP2234114B1 (de) 2012-10-03
EP1849161A2 (de) 2007-10-31
CN101156211A (zh) 2008-04-02
WO2006089313A2 (en) 2006-08-24
WO2006089313A3 (en) 2007-01-18
DE602006015613D1 (de) 2010-09-02
KR100884448B1 (ko) 2009-02-19
US7251192B2 (en) 2007-07-31
JP2012119055A (ja) 2012-06-21
IL185249A0 (en) 2008-02-09
ES2393715T3 (es) 2012-12-27
JP2008530721A (ja) 2008-08-07
EP1849161B1 (de) 2010-07-21
US7230876B2 (en) 2007-06-12

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