ATE467911T1 - Lichtemittierendes halbleiterbauelement, beleuchtungsmodul, beleuchtungsvorrichtung und verfahren zur herstellung eines lichtemittierenden halbleiterbauelements - Google Patents

Lichtemittierendes halbleiterbauelement, beleuchtungsmodul, beleuchtungsvorrichtung und verfahren zur herstellung eines lichtemittierenden halbleiterbauelements

Info

Publication number
ATE467911T1
ATE467911T1 AT05782147T AT05782147T ATE467911T1 AT E467911 T1 ATE467911 T1 AT E467911T1 AT 05782147 T AT05782147 T AT 05782147T AT 05782147 T AT05782147 T AT 05782147T AT E467911 T1 ATE467911 T1 AT E467911T1
Authority
AT
Austria
Prior art keywords
light
semiconductor component
emitting semiconductor
substrate
multilayer film
Prior art date
Application number
AT05782147T
Other languages
English (en)
Inventor
Hideo Nagai
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of ATE467911T1 publication Critical patent/ATE467911T1/de

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8314Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/882Scattering means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
AT05782147T 2004-09-17 2005-09-01 Lichtemittierendes halbleiterbauelement, beleuchtungsmodul, beleuchtungsvorrichtung und verfahren zur herstellung eines lichtemittierenden halbleiterbauelements ATE467911T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004272249A JP2006086469A (ja) 2004-09-17 2004-09-17 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法
PCT/JP2005/016475 WO2006030678A2 (en) 2004-09-17 2005-09-01 Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
ATE467911T1 true ATE467911T1 (de) 2010-05-15

Family

ID=36060431

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05782147T ATE467911T1 (de) 2004-09-17 2005-09-01 Lichtemittierendes halbleiterbauelement, beleuchtungsmodul, beleuchtungsvorrichtung und verfahren zur herstellung eines lichtemittierenden halbleiterbauelements

Country Status (7)

Country Link
US (1) US7420221B2 (de)
EP (1) EP1769541B1 (de)
JP (1) JP2006086469A (de)
AT (1) ATE467911T1 (de)
DE (1) DE602005021224D1 (de)
TW (1) TWI364116B (de)
WO (1) WO2006030678A2 (de)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPQ008299A0 (en) * 1999-04-30 1999-05-27 G.J. Consultants Pty Ltd Isoflavone metabolites
US20100259184A1 (en) * 2006-02-24 2010-10-14 Ryou Kato Light-emitting device
KR101263934B1 (ko) * 2006-05-23 2013-05-10 엘지디스플레이 주식회사 발광다이오드 및 그의 제조방법
JP2010502000A (ja) * 2006-08-29 2010-01-21 パナソニック株式会社 発光光源及びその製造方法
JP4753904B2 (ja) 2007-03-15 2011-08-24 シャープ株式会社 発光装置
JP5022093B2 (ja) * 2007-04-24 2012-09-12 パナソニック株式会社 実装方法
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
TW200900628A (en) * 2007-06-28 2009-01-01 Wen-Chin Shiau Manufacturing method of heat-dissipating structure of high-power LED lamp seat and product thereof
KR20090002835A (ko) * 2007-07-04 2009-01-09 엘지전자 주식회사 질화물계 발광 소자 및 그 제조방법
US20090026486A1 (en) * 2007-07-26 2009-01-29 Sharp Kabushiki Kaisha Nitride based compound semiconductor light emitting device and method of manufacturing the same
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
JP5199623B2 (ja) * 2007-08-28 2013-05-15 パナソニック株式会社 発光装置
KR101525274B1 (ko) * 2007-10-26 2015-06-02 크리, 인코포레이티드 하나 이상의 루미퍼를 갖는 조명 장치, 및 이의 제조 방법
KR100896282B1 (ko) 2007-11-01 2009-05-08 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
DE102008012407A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
JP5005573B2 (ja) * 2008-02-15 2012-08-22 スガツネ工業株式会社 照明器具及び照明器具用反射部材
CN101566304A (zh) * 2008-04-23 2009-10-28 富准精密工业(深圳)有限公司 发光二极管照明装置及制造方法
TWI473246B (zh) * 2008-12-30 2015-02-11 晶元光電股份有限公司 發光二極體晶粒等級封裝
US20100244195A1 (en) * 2009-03-27 2010-09-30 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Host substrate for nitride based light emitting devices
DE102009015307A1 (de) * 2009-03-27 2010-09-30 Osram Opto Semiconductors Gmbh Anordnung optoelektronischer Bauelemente
CN101567413A (zh) * 2009-05-28 2009-10-28 旭丽电子(广州)有限公司 发光二极管
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
EP2445018B1 (de) * 2009-06-15 2016-05-11 Panasonic Intellectual Property Management Co., Ltd. Lichtemittierendes halbleiterbauelement, lichtemittierendes modul und beleuchtungsvorrichtung
EP2315252A3 (de) * 2009-10-22 2014-04-09 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Organische elektronische Geräte und Herstellungsverfahren dafür
US8962362B2 (en) 2009-11-05 2015-02-24 Wavesquare Inc. Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
KR101658838B1 (ko) * 2010-02-04 2016-10-04 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
JP5343040B2 (ja) * 2010-06-07 2013-11-13 株式会社東芝 半導体発光装置
JP5449039B2 (ja) 2010-06-07 2014-03-19 株式会社東芝 半導体発光装置及びその製造方法
KR101735670B1 (ko) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 발광 소자
CN102130254B (zh) * 2010-09-29 2015-03-11 映瑞光电科技(上海)有限公司 发光装置及其制造方法
CN102130248A (zh) * 2010-10-08 2011-07-20 映瑞光电科技(上海)有限公司 发光装置及其制造方法
US9899329B2 (en) 2010-11-23 2018-02-20 X-Celeprint Limited Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance
KR101591991B1 (ko) * 2010-12-02 2016-02-05 삼성전자주식회사 발광소자 패키지 및 그 제조 방법
DE102010054898A1 (de) 2010-12-17 2012-06-21 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und Halbleiterchip
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
KR20120100193A (ko) * 2011-03-03 2012-09-12 서울옵토디바이스주식회사 발광 다이오드 칩
JP5862354B2 (ja) * 2011-04-15 2016-02-16 三菱化学株式会社 窒化物系発光ダイオード素子とその製造方法
CN103814447B (zh) 2011-05-12 2016-04-20 Bbsa有限公司 垂直型第iii族氮化物半导体led芯片及其制造方法
US8889485B2 (en) 2011-06-08 2014-11-18 Semprius, Inc. Methods for surface attachment of flipped active componenets
CN102231421B (zh) * 2011-07-15 2013-01-23 中国科学院半导体研究所 发光二极管封装结构的制作方法
US8952395B2 (en) 2011-07-26 2015-02-10 Micron Technology, Inc. Wafer-level solid state transducer packaging transducers including separators and associated systems and methods
EP2562814B1 (de) * 2011-08-22 2020-08-19 LG Innotek Co., Ltd. Lichtemittierende Vorrichtung und lichtemittierende Vorrichtungsverpackung
US8497146B2 (en) 2011-08-25 2013-07-30 Micron Technology, Inc. Vertical solid-state transducers having backside terminals and associated systems and methods
US20130069088A1 (en) * 2011-09-20 2013-03-21 The Regents Of The University Of California Light emitting diode with conformal surface electrical contacts with glass encapsulation
CN103959486A (zh) * 2011-12-08 2014-07-30 皇家飞利浦有限公司 具有厚金属层的半导体发光器件
KR101891257B1 (ko) * 2012-04-02 2018-08-24 삼성전자주식회사 반도체 발광장치 및 그 제조방법
KR101946914B1 (ko) * 2012-06-08 2019-02-12 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
US9105818B2 (en) * 2012-08-24 2015-08-11 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US9214610B2 (en) * 2012-08-24 2015-12-15 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US9093618B2 (en) * 2012-08-24 2015-07-28 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
JP2013030812A (ja) * 2012-11-06 2013-02-07 Mitsubishi Chemicals Corp Ledチップ固定用基板およびその製造方法
WO2014108777A1 (en) * 2013-01-08 2014-07-17 Koninklijke Philips N.V. Shaped led for enhanced light extraction efficiency
EP2755245A3 (de) * 2013-01-14 2016-05-04 LG Innotek Co., Ltd. Lichtemittierende Vorrichtung
TWI584493B (zh) * 2013-02-04 2017-05-21 晶元光電股份有限公司 發光二極體及其製作方法
DE102013111120A1 (de) * 2013-10-08 2015-04-09 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips
TWI609151B (zh) * 2014-02-25 2017-12-21 綠點高新科技股份有限公司 Lighting device and its manufacturing method
JP2015173177A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光素子
JP2015176963A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体発光装置
WO2015140760A1 (en) * 2014-03-20 2015-09-24 Koninklijke Philips N.V. Led packages and apparatuses with enhanced color uniformity, and manufacturing method therefor.
CN113035851B (zh) * 2014-06-18 2022-03-29 艾克斯展示公司技术有限公司 微组装led显示器
CN117198903A (zh) * 2014-07-20 2023-12-08 艾克斯展示公司技术有限公司 用于微转贴印刷的设备及方法
KR20170047324A (ko) 2014-08-26 2017-05-04 엑스-셀레프린트 리미티드 마이크로 어셈블링된 하이브리드 디스플레이들 및 조명 엘리먼트들
US10622522B2 (en) * 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US9818725B2 (en) 2015-06-01 2017-11-14 X-Celeprint Limited Inorganic-light-emitter display with integrated black matrix
US9991163B2 (en) 2014-09-25 2018-06-05 X-Celeprint Limited Small-aperture-ratio display with electrical component
US9799719B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Active-matrix touchscreen
US9537069B1 (en) 2014-09-25 2017-01-03 X-Celeprint Limited Inorganic light-emitting diode with encapsulating reflector
JP6444754B2 (ja) 2015-02-05 2018-12-26 日亜化学工業株式会社 発光装置
JP6156402B2 (ja) 2015-02-13 2017-07-05 日亜化学工業株式会社 発光装置
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US11061276B2 (en) 2015-06-18 2021-07-13 X Display Company Technology Limited Laser array display
US10133426B2 (en) 2015-06-18 2018-11-20 X-Celeprint Limited Display with micro-LED front light
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
JP6696298B2 (ja) * 2015-07-30 2020-05-20 日亜化学工業株式会社 発光素子及びそれを用いた発光装置
BR102016015672B1 (pt) * 2015-07-30 2021-11-30 Nichia Corporation Elemento emissor de luz com uma forma plana hexagonal e dispositivo emissor de luz
US9640108B2 (en) 2015-08-25 2017-05-02 X-Celeprint Limited Bit-plane pulse width modulated digital display system
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
JP2017108020A (ja) * 2015-12-10 2017-06-15 パナソニックIpマネジメント株式会社 レンズユニット、ledモジュールおよびそれを用いた照明器具
JP6361645B2 (ja) 2015-12-22 2018-07-25 日亜化学工業株式会社 発光装置
US9930277B2 (en) 2015-12-23 2018-03-27 X-Celeprint Limited Serial row-select matrix-addressed system
US9786646B2 (en) 2015-12-23 2017-10-10 X-Celeprint Limited Matrix addressed device repair
US10091446B2 (en) 2015-12-23 2018-10-02 X-Celeprint Limited Active-matrix displays with common pixel control
US9928771B2 (en) 2015-12-24 2018-03-27 X-Celeprint Limited Distributed pulse width modulation control
US10200013B2 (en) 2016-02-18 2019-02-05 X-Celeprint Limited Micro-transfer-printed acoustic wave filter device
US10361677B2 (en) 2016-02-18 2019-07-23 X-Celeprint Limited Transverse bulk acoustic wave filter
US10109753B2 (en) 2016-02-19 2018-10-23 X-Celeprint Limited Compound micro-transfer-printed optical filter device
TWI681508B (zh) 2016-02-25 2020-01-01 愛爾蘭商艾克斯瑟樂普林特有限公司 有效率地微轉印微型裝置於大尺寸基板上
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
US10150326B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid document with variable state
US10150325B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid banknote with electronic indicia
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
US10153256B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
US10198890B2 (en) 2016-04-19 2019-02-05 X-Celeprint Limited Hybrid banknote with electronic indicia using near-field-communications
US9997102B2 (en) 2016-04-19 2018-06-12 X-Celeprint Limited Wirelessly powered display and system
US10360846B2 (en) 2016-05-10 2019-07-23 X-Celeprint Limited Distributed pulse-width modulation system with multi-bit digital storage and output device
US9997501B2 (en) 2016-06-01 2018-06-12 X-Celeprint Limited Micro-transfer-printed light-emitting diode device
US10453826B2 (en) 2016-06-03 2019-10-22 X-Celeprint Limited Voltage-balanced serial iLED pixel and display
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution
WO2018091459A1 (en) 2016-11-15 2018-05-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10600671B2 (en) 2016-11-15 2020-03-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10395966B2 (en) 2016-11-15 2019-08-27 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10438859B2 (en) 2016-12-19 2019-10-08 X-Celeprint Limited Transfer printed device repair
US10832609B2 (en) 2017-01-10 2020-11-10 X Display Company Technology Limited Digital-drive pulse-width-modulated output system
US10396137B2 (en) 2017-03-10 2019-08-27 X-Celeprint Limited Testing transfer-print micro-devices on wafer
US11024608B2 (en) 2017-03-28 2021-06-01 X Display Company Technology Limited Structures and methods for electrical connection of micro-devices and substrates
JP6841198B2 (ja) * 2017-09-28 2021-03-10 豊田合成株式会社 発光素子の製造方法
US10957832B2 (en) * 2018-10-22 2021-03-23 General Electric Company Electronics package for light emitting semiconductor devices and method of manufacturing thereof

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3557011B2 (ja) * 1995-03-30 2004-08-25 株式会社東芝 半導体発光素子、及びその製造方法
JPH09307122A (ja) * 1996-05-17 1997-11-28 Shinko Electric Ind Co Ltd 光素子モジュール
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
JP3026967B1 (ja) * 1998-12-18 2000-03-27 スタンレー電気株式会社 車両用灯具
JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP4296644B2 (ja) * 1999-01-29 2009-07-15 豊田合成株式会社 発光ダイオード
JP3399440B2 (ja) 1999-04-26 2003-04-21 松下電器産業株式会社 複合発光素子と発光装置及びその製造方法
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
JP5110744B2 (ja) * 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 発光装置及びその製造方法
US7091656B2 (en) * 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
US6642652B2 (en) * 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
JP3989794B2 (ja) 2001-08-09 2007-10-10 松下電器産業株式会社 Led照明装置およびled照明光源
TW567619B (en) 2001-08-09 2003-12-21 Matsushita Electric Industrial Co Ltd LED lighting apparatus and card-type LED light source
JP4945865B2 (ja) * 2001-08-27 2012-06-06 ソニー株式会社 多層配線構造又は電極取り出し構造、電気回路装置、及びこれらの製造方法
WO2003034508A1 (fr) * 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
JP4295489B2 (ja) * 2001-11-13 2009-07-15 パナソニック株式会社 半導体装置の製造方法
JP4239564B2 (ja) * 2002-11-15 2009-03-18 豊田合成株式会社 発光ダイオードおよびledライト
JP4289027B2 (ja) 2002-07-25 2009-07-01 豊田合成株式会社 発光装置
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
TW200414572A (en) 2002-11-07 2004-08-01 Matsushita Electric Industrial Co Ltd LED lamp
JP2004172586A (ja) * 2002-11-07 2004-06-17 Matsushita Electric Ind Co Ltd Led照明光源
JP2004228297A (ja) * 2003-01-22 2004-08-12 Sharp Corp 半導体発光装置
JP2004265986A (ja) * 2003-02-28 2004-09-24 Citizen Electronics Co Ltd 高輝度発光素子及びそれを用いた発光装置及び高輝度発光素子の製造方法
CN101789482B (zh) * 2003-03-10 2013-04-17 丰田合成株式会社 固体元件装置及其制造方法
US6885033B2 (en) * 2003-03-10 2005-04-26 Cree, Inc. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
KR20050034936A (ko) * 2003-10-10 2005-04-15 삼성전기주식회사 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
US20050127833A1 (en) * 2003-12-10 2005-06-16 Tieszen Dwayne A. White light LED and method to adjust the color output of same
US7279724B2 (en) * 2004-02-25 2007-10-09 Philips Lumileds Lighting Company, Llc Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection

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US7420221B2 (en) 2008-09-02
US20070176193A1 (en) 2007-08-02
TW200620708A (en) 2006-06-16
WO2006030678A2 (en) 2006-03-23
WO2006030678A3 (en) 2006-07-06
EP1769541A2 (de) 2007-04-04
TWI364116B (en) 2012-05-11
EP1769541B1 (de) 2010-05-12

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