JP2010502000A - 発光光源及びその製造方法 - Google Patents
発光光源及びその製造方法 Download PDFInfo
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- JP2010502000A JP2010502000A JP2009508029A JP2009508029A JP2010502000A JP 2010502000 A JP2010502000 A JP 2010502000A JP 2009508029 A JP2009508029 A JP 2009508029A JP 2009508029 A JP2009508029 A JP 2009508029A JP 2010502000 A JP2010502000 A JP 2010502000A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 229920002050 silicone resin Polymers 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 72
- 239000000126 substance Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 235000005811 Viola adunca Nutrition 0.000 description 4
- 240000009038 Viola odorata Species 0.000 description 4
- 235000013487 Viola odorata Nutrition 0.000 description 4
- 235000002254 Viola papilionacea Nutrition 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- 229910003668 SrAl Inorganic materials 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- ZBTDWLVGWJNPQM-UHFFFAOYSA-N [Ni].[Cu].[Au] Chemical compound [Ni].[Cu].[Au] ZBTDWLVGWJNPQM-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Abstract
【解決手段】基板(10)と、基板(10)上に形成された端子(11)及びランド(12)と、ランド(12)上にバンプ(13)を介して実装された発光素子(14)と、発光素子(14)を覆い、かつ基板(10)の主面と発光素子(14)との間の空隙に充填された蛍光体層(15)とを含み、蛍光体層(15)は、蛍光体と透光性母材とを含み、蛍光体層(15)における前記空隙に充填された領域(15a)の蛍光体の体積含有率と、蛍光体層(15)における発光素子(14)を覆う領域(15b)の蛍光体の体積含有率とが略同一である発光光源(1)とする。
【選択図】図1
Description
前記蛍光体層は、蛍光体と透光性母材とを含み、
前記蛍光体層における前記空隙に充填された領域の前記蛍光体の体積含有率と、前記蛍光体層における前記発光素子を覆う領域の前記蛍光体の体積含有率とが略同一であることを特徴とする。
前記ランド上にバンプを介して発光素子を実装する工程と、
蛍光体と透光性母材とを含む蛍光体層形成材料を、前記発光素子を覆い、かつ前記基板の主面と前記発光素子との間の空隙に充填されるように減圧しながら配置する工程と、
前記剥離性樹脂コート層を剥離する工程とを含むことを特徴とする。
10 基板
11 端子
12 ランド
13 バンプ
14 発光素子
15 蛍光体層
15a 第1領域
15b 第2領域
16 静電気対策部材
20 剥離性樹脂コート層
21 蛍光体層形成材料
22 真空ポンプ
23 型
Claims (7)
- 基板と、前記基板上に形成された端子及びランドと、前記ランド上にバンプを介して実装された発光素子と、前記発光素子を覆い、かつ前記基板の主面と前記発光素子との間の空隙に充填された蛍光体層とを含む発光光源であって、
前記蛍光体層は、蛍光体と透光性母材とを含み、
前記蛍光体層における前記空隙に充填された領域の前記蛍光体の体積含有率と、前記蛍光体層における前記発光素子を覆う領域の前記蛍光体の体積含有率とが略同一であることを特徴とする発光光源。 - 前記蛍光体層における前記空隙に充填された領域の前記蛍光体の体積含有率は、前記蛍光体層における前記発光素子を覆う領域の前記蛍光体の体積含有率の80%以上である請求項1に記載の発光光源。
- 前記透光性母材は、シリコーン樹脂である請求項1に記載の発光光源。
- 前記ランドの面積が、前記ランド上に実装される前記発光素子の面積より広い請求項1に記載の発光光源。
- 端子及びランドが形成された基板上に、前記端子を覆うようにして剥離性樹脂コート層を配置する工程と、
前記ランド上にバンプを介して発光素子を実装する工程と、
蛍光体と透光性母材とを含む蛍光体層形成材料を、前記発光素子を覆い、かつ前記基板の主面と前記発光素子との間の空隙に充填されるように減圧しながら配置する工程と、
前記剥離性樹脂コート層を剥離する工程とを含むことを特徴とする発光光源の製造方法。 - 前記蛍光体層形成材料を配置する工程は、20Pa未満の雰囲気圧において行う請求項5に記載の発光光源の製造方法。
- 前記ランド表面に対する前記蛍光体層形成材料の接触角が、前記基板の主面に対する前記蛍光体層形成材料の接触角より小さい請求項5に記載の発光光源の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006232616 | 2006-08-29 | ||
PCT/JP2007/066964 WO2008026717A1 (en) | 2006-08-29 | 2007-08-24 | Electroluminescent phos phor- converted light source and method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010502000A true JP2010502000A (ja) | 2010-01-21 |
Family
ID=38698860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009508029A Pending JP2010502000A (ja) | 2006-08-29 | 2007-08-24 | 発光光源及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100244662A1 (ja) |
EP (1) | EP2059954B1 (ja) |
JP (1) | JP2010502000A (ja) |
KR (1) | KR101135740B1 (ja) |
CN (1) | CN101507005B (ja) |
TW (1) | TWI407584B (ja) |
WO (1) | WO2008026717A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013165170A (ja) * | 2012-02-10 | 2013-08-22 | Oki Data Corp | 半導体発光装置、画像表示装置、携帯端末、ヘッドアップディスプレイユニット、画像投影装置、ヘッドマウントディスプレイ及び画像形成装置 |
US9178115B2 (en) | 2012-02-10 | 2015-11-03 | Oki Data Corporation | Semiconductor light emitting apparatus, image displaying apparatus, mobile terminal, head-up display apparatus, image projector, head-mounted display apparatus, and image forming apparatus |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101134815B1 (ko) * | 2010-01-15 | 2012-04-13 | 엘지이노텍 주식회사 | 영상표시장치 및 그 제조방법 |
US8198109B2 (en) * | 2010-08-27 | 2012-06-12 | Quarkstar Llc | Manufacturing methods for solid state light sheet or strip with LEDs connected in series for general illumination |
JP5612991B2 (ja) * | 2010-09-30 | 2014-10-22 | シャープ株式会社 | 発光装置及びこれを備えた照明装置 |
WO2014053953A1 (en) | 2012-10-04 | 2014-04-10 | Koninklijke Philips N.V. | Light emitting device |
US10957825B2 (en) * | 2017-09-25 | 2021-03-23 | Lg Innotek Co., Ltd. | Lighting module and lighting apparatus having thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005019663A (ja) * | 2003-06-26 | 2005-01-20 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2005116998A (ja) * | 2003-10-10 | 2005-04-28 | Samsung Electro Mech Co Ltd | 蛍光体を用いた波長変換型発光ダイオードパッケージ及び製造方法 |
JP2006013311A (ja) * | 2004-06-29 | 2006-01-12 | Nichia Chem Ind Ltd | 発光装置の製造方法及び発光装置 |
WO2006054616A1 (en) * | 2004-11-22 | 2006-05-26 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device |
WO2006068297A1 (en) * | 2004-12-22 | 2006-06-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element |
Family Cites Families (8)
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US6878973B2 (en) * | 2001-08-23 | 2005-04-12 | Lumileds Lighting U.S., Llc | Reduction of contamination of light emitting devices |
JP2005167092A (ja) * | 2003-12-04 | 2005-06-23 | Nitto Denko Corp | 光半導体装置の製造方法 |
JP4243177B2 (ja) * | 2003-12-22 | 2009-03-25 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
WO2005124878A1 (ja) * | 2004-06-22 | 2005-12-29 | Konica Minolta Holdings, Inc. | 白色発光ダイオード及びその製造方法 |
JP2006086469A (ja) * | 2004-09-17 | 2006-03-30 | Matsushita Electric Ind Co Ltd | 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法 |
WO2006041178A2 (en) * | 2004-10-13 | 2006-04-20 | Matsushita Electric Industrial Co., Ltd. | Luminescent light source, method for manufacturing the same, and light-emitting apparatus |
US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
KR101204115B1 (ko) * | 2005-02-18 | 2012-11-22 | 니치아 카가쿠 고교 가부시키가이샤 | 배광 특성을 제어하기 위한 렌즈를 구비한 발광 장치 |
-
2007
- 2007-08-24 US US12/438,472 patent/US20100244662A1/en not_active Abandoned
- 2007-08-24 JP JP2009508029A patent/JP2010502000A/ja active Pending
- 2007-08-24 CN CN2007800316854A patent/CN101507005B/zh not_active Expired - Fee Related
- 2007-08-24 KR KR1020097003538A patent/KR101135740B1/ko active IP Right Grant
- 2007-08-24 EP EP07806441.7A patent/EP2059954B1/en not_active Not-in-force
- 2007-08-24 WO PCT/JP2007/066964 patent/WO2008026717A1/en active Application Filing
- 2007-08-27 TW TW096131636A patent/TWI407584B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005019663A (ja) * | 2003-06-26 | 2005-01-20 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2005116998A (ja) * | 2003-10-10 | 2005-04-28 | Samsung Electro Mech Co Ltd | 蛍光体を用いた波長変換型発光ダイオードパッケージ及び製造方法 |
JP2006013311A (ja) * | 2004-06-29 | 2006-01-12 | Nichia Chem Ind Ltd | 発光装置の製造方法及び発光装置 |
WO2006054616A1 (en) * | 2004-11-22 | 2006-05-26 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device |
WO2006068297A1 (en) * | 2004-12-22 | 2006-06-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013165170A (ja) * | 2012-02-10 | 2013-08-22 | Oki Data Corp | 半導体発光装置、画像表示装置、携帯端末、ヘッドアップディスプレイユニット、画像投影装置、ヘッドマウントディスプレイ及び画像形成装置 |
US9178115B2 (en) | 2012-02-10 | 2015-11-03 | Oki Data Corporation | Semiconductor light emitting apparatus, image displaying apparatus, mobile terminal, head-up display apparatus, image projector, head-mounted display apparatus, and image forming apparatus |
Also Published As
Publication number | Publication date |
---|---|
KR20090034995A (ko) | 2009-04-08 |
US20100244662A1 (en) | 2010-09-30 |
KR101135740B1 (ko) | 2012-04-16 |
WO2008026717A1 (en) | 2008-03-06 |
EP2059954A1 (en) | 2009-05-20 |
CN101507005B (zh) | 2011-10-12 |
TW200814379A (en) | 2008-03-16 |
CN101507005A (zh) | 2009-08-12 |
TWI407584B (zh) | 2013-09-01 |
EP2059954B1 (en) | 2016-10-19 |
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