JP2005167092A - 光半導体装置の製造方法 - Google Patents
光半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2005167092A JP2005167092A JP2003406400A JP2003406400A JP2005167092A JP 2005167092 A JP2005167092 A JP 2005167092A JP 2003406400 A JP2003406400 A JP 2003406400A JP 2003406400 A JP2003406400 A JP 2003406400A JP 2005167092 A JP2005167092 A JP 2005167092A
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- JP
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- Prior art keywords
- optical semiconductor
- resin layer
- diisocyanate
- resin
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
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- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/74—Polyisocyanates or polyisothiocyanates cyclic
- C08G18/76—Polyisocyanates or polyisothiocyanates cyclic aromatic
- C08G18/7607—Compounds of C08G18/7614 and of C08G18/7657
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- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/14—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles in several steps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/02—Polymeric products of isocyanates or isothiocyanates of isocyanates or isothiocyanates only
- C08G18/025—Polymeric products of isocyanates or isothiocyanates of isocyanates or isothiocyanates only the polymeric products containing carbodiimide groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/71—Monoisocyanates or monoisothiocyanates
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
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Abstract
【解決手段】光半導体装置の製造方法であって、
(1) 導体上に搭載した光半導体素子上に樹脂層を形成する工程、及び
(2) 工程(1)で形成した樹脂層を加圧成型する工程
を有する、光半導体装置の製造方法。
【選択図】なし
Description
(1) 導体上に搭載した光半導体素子上に樹脂層を形成する工程、及び
(2) 工程(1)で形成した樹脂層を加圧成型する工程
を有する、光半導体装置の製造方法に関する。
(1) 導体上に搭載した光半導体素子上に樹脂層を形成する工程、及び
(2) 工程(1)で形成した樹脂層を加圧成型する工程
を有する。
で表されるポリカルボジイミドがより好ましい。
(3) 工程(2)で加圧成型した樹脂層(第1樹脂層)の上に、第1樹脂層を構成する第1樹脂よりも屈折率の小さい第2樹脂からなる第2樹脂層を形成する工程
を設けることが好ましい。
攪拌装置、滴下漏斗、還流冷却器、温度計を取り付けた500mLの四つ口フラスコにトリレンジイソシアネート(異性体混合物:三井武田ケミカル製T−80)を29.89g(171.6mmol)、4,4’−ジフェニルメタンジイソシアネートを94.48g(377.52mmol)、ナフタレンジイソシアネートを64.92g(308.88mmol)、トルエンを184.59g入れ、混合した。
上記製造例にて得られた、仮硬化したシート状のポリカルボジイミドを4枚重ね合わせて、50mm×30mmで厚さ200μmのシートを作製した。かかるシートを、GaNからなるLEDチップが7×18個(2.5×2.2mmピッチ)で搭載された、50mm×30mmの基板に、ラミネーターを用い、回転速度500r/min、ロール温度100℃、ロール圧0.5MPaにて貼り合わせ、第1樹脂層を形成した。
前記カルボジイミド溶液を、各LEDチップ毎に滴下して、第1樹脂層を形成した以外は、実施例1と同様にして、発光ダイオードアレイを作製した。
2 光半導体素子
3 基板
4 ラミネータ
5 キャスティング
6 ワイヤ
7 導体
8 スタンパ
9 LEDアレイ
10 LEDチップ
11 第1樹脂層
12 第2樹脂層
Claims (5)
- 光半導体装置の製造方法であって、
(1) 導体上に搭載した光半導体素子上に樹脂層を形成する工程、及び
(2) 工程(1)で形成した樹脂層を加圧成型する工程
を有する、光半導体装置の製造方法。 - 工程(2)において、工程(1)で形成した樹脂層の加圧成型をスタンパにより行う請求項1記載の製造方法。
- 工程(2)の後、さらに、
(3) 工程(2)で加圧成型した樹脂層(第1樹脂層)の上に、第1樹脂層を構成する第1樹脂よりも屈折率の小さい第2樹脂からなる第2樹脂層を形成する工程
を有する、請求項1又は2記載の製造方法。 - 光半導体装置が発光ダイオードアレイである、請求項1〜4いずれか記載の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003406400A JP2005167092A (ja) | 2003-12-04 | 2003-12-04 | 光半導体装置の製造方法 |
CNB2004101001845A CN100401538C (zh) | 2003-12-04 | 2004-12-03 | 制造光半导体器件的方法 |
KR1020040101219A KR100798195B1 (ko) | 2003-12-04 | 2004-12-03 | 광 반도체 장치의 제조방법 |
EP04028768A EP1538681A3 (en) | 2003-12-04 | 2004-12-03 | Process for producing optical semiconductor device |
US11/002,185 US20050136570A1 (en) | 2003-12-04 | 2004-12-03 | Process for producing optical semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003406400A JP2005167092A (ja) | 2003-12-04 | 2003-12-04 | 光半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005167092A true JP2005167092A (ja) | 2005-06-23 |
Family
ID=34464008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003406400A Pending JP2005167092A (ja) | 2003-12-04 | 2003-12-04 | 光半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050136570A1 (ja) |
EP (1) | EP1538681A3 (ja) |
JP (1) | JP2005167092A (ja) |
KR (1) | KR100798195B1 (ja) |
CN (1) | CN100401538C (ja) |
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KR100796670B1 (ko) | 2006-04-27 | 2008-01-22 | (주)루멘스 | 발광다이오드 및 그 제조방법 |
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- 2004-12-03 EP EP04028768A patent/EP1538681A3/en not_active Withdrawn
- 2004-12-03 US US11/002,185 patent/US20050136570A1/en not_active Abandoned
- 2004-12-03 CN CNB2004101001845A patent/CN100401538C/zh not_active Expired - Fee Related
- 2004-12-03 KR KR1020040101219A patent/KR100798195B1/ko not_active IP Right Cessation
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US9054283B2 (en) | 2005-10-27 | 2015-06-09 | Lg Innotek Co., Ltd. | Light emitting diode package and method of manufacturing the same |
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JPWO2007080803A1 (ja) * | 2006-01-16 | 2009-06-11 | パナソニック株式会社 | 半導体発光装置 |
KR100796670B1 (ko) | 2006-04-27 | 2008-01-22 | (주)루멘스 | 발광다이오드 및 그 제조방법 |
WO2008022230A1 (en) * | 2006-08-17 | 2008-02-21 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
JP2009010109A (ja) * | 2007-06-27 | 2009-01-15 | Namics Corp | 発光ダイオードチップの封止体の製造方法 |
KR20110096529A (ko) * | 2008-10-09 | 2011-08-30 | 포세온 테크날러지 인코퍼레이티드 | 이심 광학기기를 이용한 고휘도 조명장치와 그 제조 방법 |
JP2012505522A (ja) * | 2008-10-09 | 2012-03-01 | フォーセン テクノロジー インク | 高照度透過偏心光学系 |
KR101889782B1 (ko) * | 2008-10-09 | 2018-08-21 | 포세온 테크날러지 인코퍼레이티드 | 이심 광학기기를 이용한 고휘도 조명장치와 그 제조 방법 |
KR101199216B1 (ko) * | 2011-12-09 | 2012-11-07 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 |
Also Published As
Publication number | Publication date |
---|---|
CN100401538C (zh) | 2008-07-09 |
KR100798195B1 (ko) | 2008-01-24 |
US20050136570A1 (en) | 2005-06-23 |
EP1538681A2 (en) | 2005-06-08 |
KR20050054475A (ko) | 2005-06-10 |
EP1538681A3 (en) | 2005-09-21 |
CN1624945A (zh) | 2005-06-08 |
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