ATE462223T1 - Vorspannungsverfahren und vorspannungsschaltung zur verminderung der verzerrung - Google Patents

Vorspannungsverfahren und vorspannungsschaltung zur verminderung der verzerrung

Info

Publication number
ATE462223T1
ATE462223T1 AT02764213T AT02764213T ATE462223T1 AT E462223 T1 ATE462223 T1 AT E462223T1 AT 02764213 T AT02764213 T AT 02764213T AT 02764213 T AT02764213 T AT 02764213T AT E462223 T1 ATE462223 T1 AT E462223T1
Authority
AT
Austria
Prior art keywords
bias
transistor
nonlinearity
components
zero
Prior art date
Application number
AT02764213T
Other languages
English (en)
Inventor
Vladimir Aparin
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Application granted granted Critical
Publication of ATE462223T1 publication Critical patent/ATE462223T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
AT02764213T 2001-04-18 2002-04-17 Vorspannungsverfahren und vorspannungsschaltung zur verminderung der verzerrung ATE462223T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28479101P 2001-04-18 2001-04-18
US10/002,377 US6531924B2 (en) 2001-04-18 2001-11-15 Bias method and circuit for distortion reduction
PCT/US2002/012190 WO2002087072A2 (en) 2001-04-18 2002-04-17 Bias method and circuit for distortion reduction

Publications (1)

Publication Number Publication Date
ATE462223T1 true ATE462223T1 (de) 2010-04-15

Family

ID=26670304

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02764213T ATE462223T1 (de) 2001-04-18 2002-04-17 Vorspannungsverfahren und vorspannungsschaltung zur verminderung der verzerrung

Country Status (11)

Country Link
US (1) US6531924B2 (de)
EP (1) EP1405406B1 (de)
JP (2) JP4417630B2 (de)
AT (1) ATE462223T1 (de)
AU (1) AU2002307386A1 (de)
CA (1) CA2444700A1 (de)
DE (1) DE60235758D1 (de)
HK (1) HK1064812A1 (de)
RU (1) RU2305893C2 (de)
TW (1) TW563296B (de)
WO (1) WO2002087072A2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531924B2 (en) * 2001-04-18 2003-03-11 Qualcomm Incorporated Bias method and circuit for distortion reduction
EP1416628B1 (de) * 2002-10-31 2013-12-25 Hewlett-Packard Development Company, L.P. Verstärkersysteme und Verfahren mit einer Rückkopplungsschleife
US6992519B2 (en) * 2004-02-11 2006-01-31 Nokia Corporation Method and apparatus providing cancellation of second order intermodulation distortion and enhancement of second order intercept point (IIP2) in common source and common emitter transconductance circuits
US7881733B2 (en) 2004-11-05 2011-02-01 Wirelesswerx International, Inc. Method and system to monitor and control devices utilizing wireless media
US7286929B2 (en) * 2004-11-05 2007-10-23 Wirelesswerx International, Inc. Method and system to configure and utilize geographical zones
US7323929B2 (en) * 2006-03-09 2008-01-29 Analog Devices Inc. Apparatus for and method of biasing a transistor
WO2008069221A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Plasma display panel and field emission display
EP3177046A1 (de) * 2007-03-07 2017-06-07 Wirelesswerx International, Inc. Verfahren und system zur bereitstellung von bereichsspezifischen benachrichtigungen
US7679448B1 (en) 2007-08-30 2010-03-16 Pmc-Sierra, Inc. Continuous wave based bias method and apparatus for minimizing MOS transistor distortion
US8428867B2 (en) * 2007-08-30 2013-04-23 Wirelesswerx International, Inc. Configuring and using multi-dimensional zones
US8200186B2 (en) 2007-08-30 2012-06-12 Wirelesswerx International, Inc. Emergency control in a multi-dimensional space
US8315203B2 (en) * 2007-08-30 2012-11-20 Wirelesswerx International, Inc. Mapping in a multi-dimensional space
US8285245B2 (en) * 2007-08-30 2012-10-09 Wirelesswerx International, Inc. Messaging in a multi-dimensional space
US8612278B1 (en) 2013-03-06 2013-12-17 Wirelesswerx International, Inc. Controlling queuing in a defined location
KR101472799B1 (ko) * 2008-06-11 2014-12-16 삼성전자주식회사 유기발광 디스플레이 장치 및 구동방법
WO2011021070A1 (en) * 2009-08-19 2011-02-24 Nxp B.V. Circuit with reference source to control the small signal transconductance of an amplifier transistor
US8305148B2 (en) 2010-12-03 2012-11-06 Linear Technology Corporation Bias point setting for third order linearity optimization of class A amplifier
US8653892B2 (en) 2011-06-23 2014-02-18 Cheng-Han Wang Systematic intermodulation distortion calibration for a differential LNA
US8803612B1 (en) 2012-07-26 2014-08-12 Scientific Components Corporation Low-noise amplifier with high linearity
US9154079B2 (en) * 2012-10-24 2015-10-06 Qualcomm Incorporated Threshold tracking bias voltage for mixers
RU2568317C1 (ru) * 2014-10-22 2015-11-20 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Донской Государственный Технический Университет" (Дгту) Широкополосная цепь смещения статического уровня в транзисторных каскадах усиления и преобразования сигналов
US10666192B2 (en) * 2018-09-27 2020-05-26 Qualcomm Incorporated Attenuation of flicker noise in bias generators
US11095254B1 (en) 2020-01-23 2021-08-17 Analog Devices International Unlimited Company Circuits and methods to reduce distortion in an amplifier

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5883408A (ja) * 1981-11-13 1983-05-19 Victor Co Of Japan Ltd プツシユプル増幅回路の歪低源回路
JPS61187424A (ja) * 1985-02-14 1986-08-21 Fujitsu Ltd 歪補償回路
JPH0348506A (ja) * 1989-04-19 1991-03-01 Nec Corp 電流可変回路
JPH05121957A (ja) * 1991-10-25 1993-05-18 Nec Corp 増幅器
JP2661527B2 (ja) * 1993-01-27 1997-10-08 日本電気株式会社 差動増幅回路
JPH08330861A (ja) * 1995-05-31 1996-12-13 Nec Corp 低電圧オペレーショナルトランスコンダクタンスアンプ
JP3517766B2 (ja) * 1997-02-20 2004-04-12 株式会社ルネサステクノロジ Ｒｆ電力増幅回路および移動体通信端末装置
JP3607855B2 (ja) * 1999-07-19 2005-01-05 シャープ株式会社 電力増幅器
US6348834B1 (en) * 2000-05-15 2002-02-19 Pro Tech Communications Inc. Linearization of FET channel impedance for small signal applications
US6359516B1 (en) * 2000-07-21 2002-03-19 Philips Electronics North America Corporation High-frequency amplifier circuit with independent control of quiescent current and bias impedance
US6556084B2 (en) * 2000-12-18 2003-04-29 Koninklijke Philips Electronics N.V. Linearized class C amplifier with dynamic biasing
US6456163B1 (en) * 2001-03-08 2002-09-24 Koninklijke Philips Electronics N.V. High-frequency amplifier circuit having a directly-connected bias circuit
US6531924B2 (en) * 2001-04-18 2003-03-11 Qualcomm Incorporated Bias method and circuit for distortion reduction

Also Published As

Publication number Publication date
JP2005510895A (ja) 2005-04-21
HK1064812A1 (en) 2005-02-04
RU2305893C2 (ru) 2007-09-10
US6531924B2 (en) 2003-03-11
EP1405406B1 (de) 2010-03-24
AU2002307386A1 (en) 2002-11-05
EP1405406A2 (de) 2004-04-07
TW563296B (en) 2003-11-21
DE60235758D1 (de) 2010-05-06
JP4417630B2 (ja) 2010-02-17
WO2002087072A2 (en) 2002-10-31
JP2010050982A (ja) 2010-03-04
WO2002087072A3 (en) 2004-02-12
CA2444700A1 (en) 2002-10-31
RU2003133457A (ru) 2005-05-10
US20020175735A1 (en) 2002-11-28

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