ATE453000T1 - Züchten von ultrahochreinen siliciumcarbidkristallen in wasserstoffhaltiger umgebung - Google Patents
Züchten von ultrahochreinen siliciumcarbidkristallen in wasserstoffhaltiger umgebungInfo
- Publication number
- ATE453000T1 ATE453000T1 AT04779095T AT04779095T ATE453000T1 AT E453000 T1 ATE453000 T1 AT E453000T1 AT 04779095 T AT04779095 T AT 04779095T AT 04779095 T AT04779095 T AT 04779095T AT E453000 T1 ATE453000 T1 AT E453000T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon carbide
- crystal
- hydrogen
- source powder
- growth chamber
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 8
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 8
- 239000000843 powder Substances 0.000 abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 4
- 239000001257 hydrogen Substances 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- 238000000859 sublimation Methods 0.000 abstract 3
- 230000008022 sublimation Effects 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Toys (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/628,189 US7147715B2 (en) | 2003-07-28 | 2003-07-28 | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| PCT/US2004/023861 WO2005012603A1 (en) | 2003-07-28 | 2004-07-26 | Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE453000T1 true ATE453000T1 (de) | 2010-01-15 |
Family
ID=34103327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04779095T ATE453000T1 (de) | 2003-07-28 | 2004-07-26 | Züchten von ultrahochreinen siliciumcarbidkristallen in wasserstoffhaltiger umgebung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7147715B2 (enExample) |
| EP (1) | EP1664397B1 (enExample) |
| JP (1) | JP4891767B2 (enExample) |
| KR (1) | KR20060065661A (enExample) |
| CN (1) | CN100451184C (enExample) |
| AT (1) | ATE453000T1 (enExample) |
| CA (1) | CA2533934A1 (enExample) |
| DE (1) | DE602004024800D1 (enExample) |
| TW (1) | TW200510264A (enExample) |
| WO (1) | WO2005012603A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6814801B2 (en) * | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| US7220313B2 (en) * | 2003-07-28 | 2007-05-22 | Cree, Inc. | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| US7601441B2 (en) * | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| US7316747B2 (en) * | 2002-06-24 | 2008-01-08 | Cree, Inc. | Seeded single crystal silicon carbide growth and resulting crystals |
| US7192482B2 (en) * | 2004-08-10 | 2007-03-20 | Cree, Inc. | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| US7294324B2 (en) * | 2004-09-21 | 2007-11-13 | Cree, Inc. | Low basal plane dislocation bulk grown SiC wafers |
| US7314520B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
| US7314521B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low micropipe 100 mm silicon carbide wafer |
| US7422634B2 (en) * | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
| KR100775983B1 (ko) | 2005-09-29 | 2007-11-15 | 네오세미테크 주식회사 | 반절연 탄화규소 단결정 성장방법 |
| KR100845946B1 (ko) * | 2007-01-10 | 2008-07-11 | 동의대학교 산학협력단 | ＳｉＣ 단결정 성장방법 |
| US8163086B2 (en) * | 2007-08-29 | 2012-04-24 | Cree, Inc. | Halogen assisted physical vapor transport method for silicon carbide growth |
| JP5336307B2 (ja) * | 2009-09-04 | 2013-11-06 | 株式会社ブリヂストン | 炭化珪素単結晶の製造方法 |
| KR101854731B1 (ko) * | 2011-07-28 | 2018-05-04 | 엘지이노텍 주식회사 | 잉곳 제조 방법 |
| JP5219230B1 (ja) * | 2012-09-04 | 2013-06-26 | エルシード株式会社 | ＳｉＣ蛍光材料及びその製造方法並びに発光素子 |
| CN102965733B (zh) * | 2012-11-02 | 2015-11-18 | 中国科学院物理研究所 | 一种无石墨包裹物的导电碳化硅晶体生长工艺 |
| US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
| US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
| US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
| US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
| CN103320851A (zh) * | 2013-06-05 | 2013-09-25 | 中国科学院上海硅酸盐研究所 | 大尺寸15r 碳化硅晶体的制备方法 |
| CN104947182A (zh) * | 2015-07-16 | 2015-09-30 | 中国电子科技集团公司第四十六研究所 | 一种快速生长大尺寸高纯半绝缘碳化硅单晶的方法 |
| JP6578994B2 (ja) | 2016-03-04 | 2019-09-25 | 株式会社デンソー | 炭化珪素にて構成される半導体基板およびその製造方法 |
| CA3058399A1 (en) | 2017-03-29 | 2018-10-04 | Pallidus, Inc. | Sic volumetric shapes and methods of forming boules |
| CN108118394B (zh) * | 2017-12-28 | 2020-07-17 | 河北同光晶体有限公司 | 一种降低碳化硅单晶中氮杂质含量的方法 |
| JP6806270B1 (ja) | 2019-06-20 | 2021-01-06 | 三菱電機株式会社 | 炭化ケイ素単結晶、半導体素子 |
| US12054850B2 (en) | 2019-12-27 | 2024-08-06 | Wolfspeed, Inc. | Large diameter silicon carbide wafers |
| US12125701B2 (en) | 2020-12-15 | 2024-10-22 | Wolfspeed, Inc. | Large dimension silicon carbide single crystalline materials with reduced crystallographic stress |
| US12024794B2 (en) | 2021-06-17 | 2024-07-02 | Wolfspeed, Inc. | Reduced optical absorption for silicon carbide crystalline materials |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL87348C (enExample) | 1954-03-19 | 1900-01-01 | ||
| GB8816632D0 (en) | 1988-07-13 | 1988-08-17 | Raychem Ltd | Electrical device |
| US5119540A (en) | 1990-07-24 | 1992-06-09 | Cree Research, Inc. | Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product |
| GB9206086D0 (en) | 1992-03-20 | 1992-05-06 | Philips Electronics Uk Ltd | Manufacturing electronic devices comprising,e.g.tfts and mims |
| US5709745A (en) | 1993-01-25 | 1998-01-20 | Ohio Aerospace Institute | Compound semi-conductors and controlled doping thereof |
| US5611955A (en) | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| JPH08208380A (ja) | 1995-01-25 | 1996-08-13 | Nippon Steel Corp | 単結晶炭化珪素の製造方法 |
| US5718760A (en) | 1996-02-05 | 1998-02-17 | Cree Research, Inc. | Growth of colorless silicon carbide crystals |
| US6201342B1 (en) | 1997-06-30 | 2001-03-13 | The United States Of America As Represented By The Secretary Of The Navy | Automatically sharp field emission cathodes |
| DE59901313D1 (de) * | 1998-07-13 | 2002-05-29 | Siemens Ag | VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN |
| US6218680B1 (en) | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
| JP4605961B2 (ja) * | 1999-07-07 | 2011-01-05 | エスアイクリスタル アクチエンゲゼルシャフト | ＳｉＣ単結晶を成長圧力下に加熱して昇華成長させる方法 |
| JP3920103B2 (ja) * | 2002-01-31 | 2007-05-30 | 大阪府 | 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置 |
| US7220313B2 (en) * | 2003-07-28 | 2007-05-22 | Cree, Inc. | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| JP2004099340A (ja) * | 2002-09-05 | 2004-04-02 | Nippon Steel Corp | 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法 |
-
2003
- 2003-07-28 US US10/628,189 patent/US7147715B2/en not_active Expired - Lifetime
-
2004
- 2004-07-26 CN CNB2004800264165A patent/CN100451184C/zh not_active Expired - Lifetime
- 2004-07-26 EP EP04779095A patent/EP1664397B1/en not_active Expired - Lifetime
- 2004-07-26 DE DE602004024800T patent/DE602004024800D1/de not_active Expired - Lifetime
- 2004-07-26 CA CA002533934A patent/CA2533934A1/en not_active Abandoned
- 2004-07-26 WO PCT/US2004/023861 patent/WO2005012603A1/en not_active Ceased
- 2004-07-26 JP JP2006521949A patent/JP4891767B2/ja not_active Expired - Lifetime
- 2004-07-26 KR KR1020067002078A patent/KR20060065661A/ko not_active Withdrawn
- 2004-07-26 AT AT04779095T patent/ATE453000T1/de not_active IP Right Cessation
- 2004-07-28 TW TW093122581A patent/TW200510264A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN1849417A (zh) | 2006-10-18 |
| CA2533934A1 (en) | 2005-02-10 |
| JP2007500668A (ja) | 2007-01-18 |
| CN100451184C (zh) | 2009-01-14 |
| US7147715B2 (en) | 2006-12-12 |
| US20050145164A9 (en) | 2005-07-07 |
| KR20060065661A (ko) | 2006-06-14 |
| US20050022724A1 (en) | 2005-02-03 |
| EP1664397B1 (en) | 2009-12-23 |
| EP1664397A1 (en) | 2006-06-07 |
| JP4891767B2 (ja) | 2012-03-07 |
| DE602004024800D1 (de) | 2010-02-04 |
| TW200510264A (en) | 2005-03-16 |
| WO2005012603A1 (en) | 2005-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE453000T1 (de) | Züchten von ultrahochreinen siliciumcarbidkristallen in wasserstoffhaltiger umgebung | |
| US8512471B2 (en) | Halosilane assisted PVT growth of SiC | |
| WO2006062955B1 (en) | Process for producing high quality large size silicon carbide crystals | |
| US20070290408A1 (en) | Annealing single crystal chemical vapor deposition diamonds | |
| EP2264223A3 (en) | Micropipe-free silicon carbide and related method of manufacture | |
| RU2007148460A (ru) | Бесцветный монокристаллический алмаз, полученный химическим осаждением из газовой фазы при высокой скорости роста | |
| JP2015517451A5 (enExample) | ||
| WO2008039914A3 (en) | Sic single crystals with reduced dislocation density grown by step-wise periodic perturbation technique | |
| TW200704834A (en) | Silicon wafer and manufacturing method for same | |
| JP2007500667A5 (enExample) | ||
| JP2007500667A (ja) | 水素含有雰囲気下で昇華成長させることによる炭化珪素結晶中の窒素含有量の低下 | |
| CN105543967B (zh) | 一种稳定pvt法生长4h高纯碳化硅单晶晶型的原料处理方法 | |
| CN116209793A (zh) | 用于培育晶体的方法 | |
| CN106968018A (zh) | 一种锗氮共掺的碳化硅单晶材料的生长方法 | |
| WO2003078703A1 (en) | CdTe SINGLE CRYSTAL AND CdTe POLYCRYSTAL, AND METHOD FOR PREPARATION THEREOF | |
| Noveski et al. | Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules | |
| AU2001249175A1 (en) | Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide | |
| Mokhov et al. | Controlled growth of SiC and GaN by sublimation sandwich method | |
| Zha et al. | Heat treatment in semi-closed ampoule for obtaining stoichiometrically controlled cadmium telluride | |
| EP4276227A3 (en) | Method for producing sic single crystal and method for suppressing dislocations in sic single crystal | |
| Korostelin et al. | Seeded-vapour-phase free growth and characterization of ZnTe single crystals | |
| TW200700591A (en) | Method for growing silicon single crystal and method for manufacturing silicon wafer | |
| GB803830A (en) | Semiconductor comprising silicon and method of making it | |
| EP3072995B1 (en) | Method for producing silicon carbide crystals from vapour phase | |
| JP2004256392A (ja) | 化合物半導体結晶の製造方法および化合物半導体結晶 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |