JP4891767B2 - 水素を含む雰囲気下での超高純度炭化珪素結晶の成長 - Google Patents

水素を含む雰囲気下での超高純度炭化珪素結晶の成長 Download PDF

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JP4891767B2
JP4891767B2 JP2006521949A JP2006521949A JP4891767B2 JP 4891767 B2 JP4891767 B2 JP 4891767B2 JP 2006521949 A JP2006521949 A JP 2006521949A JP 2006521949 A JP2006521949 A JP 2006521949A JP 4891767 B2 JP4891767 B2 JP 4891767B2
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silicon carbide
crystal
concentration
hydrogen
temperature
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JP2007500668A (ja
JP2007500668A5 (enExample
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マルタ，デーヴィッド・フィリップ
ジェニー，ジェイソン・ロナルド
ホブグッド，ハドソン・マクドナルド
ツヴェトコフ，ヴァレリ・エフ
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Wolfspeed Inc
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Cree Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Toys (AREA)
JP2006521949A 2003-07-28 2004-07-26 水素を含む雰囲気下での超高純度炭化珪素結晶の成長 Expired - Lifetime JP4891767B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/628,189 US7147715B2 (en) 2003-07-28 2003-07-28 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US10/628,189 2003-07-28
PCT/US2004/023861 WO2005012603A1 (en) 2003-07-28 2004-07-26 Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen

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JP2007500668A JP2007500668A (ja) 2007-01-18
JP2007500668A5 JP2007500668A5 (enExample) 2011-05-06
JP4891767B2 true JP4891767B2 (ja) 2012-03-07

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JP2006521949A Expired - Lifetime JP4891767B2 (ja) 2003-07-28 2004-07-26 水素を含む雰囲気下での超高純度炭化珪素結晶の成長

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US (1) US7147715B2 (enExample)
EP (1) EP1664397B1 (enExample)
JP (1) JP4891767B2 (enExample)
KR (1) KR20060065661A (enExample)
CN (1) CN100451184C (enExample)
AT (1) ATE453000T1 (enExample)
CA (1) CA2533934A1 (enExample)
DE (1) DE602004024800D1 (enExample)
TW (1) TW200510264A (enExample)
WO (1) WO2005012603A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112017001142B4 (de) 2016-03-04 2023-06-29 Denso Corporation Herstellungsverfahren eines Halbleitersubstrats aus Siliziumcarbid und mit diesem Verfahren herstellbares Halbleitersubstrat

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US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7220313B2 (en) * 2003-07-28 2007-05-22 Cree, Inc. Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7314521B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
KR100775983B1 (ko) 2005-09-29 2007-11-15 네오세미테크 주식회사 반절연 탄화규소 단결정 성장방법
KR100845946B1 (ko) * 2007-01-10 2008-07-11 동의대학교 산학협력단 ＳｉＣ 단결정 성장방법
US8163086B2 (en) * 2007-08-29 2012-04-24 Cree, Inc. Halogen assisted physical vapor transport method for silicon carbide growth
JP5336307B2 (ja) * 2009-09-04 2013-11-06 株式会社ブリヂストン 炭化珪素単結晶の製造方法
KR101854731B1 (ko) * 2011-07-28 2018-05-04 엘지이노텍 주식회사 잉곳 제조 방법
JP5219230B1 (ja) * 2012-09-04 2013-06-26 エルシード株式会社 ＳｉＣ蛍光材料及びその製造方法並びに発光素子
CN102965733B (zh) * 2012-11-02 2015-11-18 中国科学院物理研究所 一种无石墨包裹物的导电碳化硅晶体生长工艺
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
CN103320851A (zh) * 2013-06-05 2013-09-25 中国科学院上海硅酸盐研究所 大尺寸15r 碳化硅晶体的制备方法
CN104947182A (zh) * 2015-07-16 2015-09-30 中国电子科技集团公司第四十六研究所 一种快速生长大尺寸高纯半绝缘碳化硅单晶的方法
CA3058399A1 (en) 2017-03-29 2018-10-04 Pallidus, Inc. Sic volumetric shapes and methods of forming boules
CN108118394B (zh) * 2017-12-28 2020-07-17 河北同光晶体有限公司 一种降低碳化硅单晶中氮杂质含量的方法
JP6806270B1 (ja) 2019-06-20 2021-01-06 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
US12054850B2 (en) 2019-12-27 2024-08-06 Wolfspeed, Inc. Large diameter silicon carbide wafers
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
US12024794B2 (en) 2021-06-17 2024-07-02 Wolfspeed, Inc. Reduced optical absorption for silicon carbide crystalline materials

Citations (7)

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JPH08208380A (ja) * 1995-01-25 1996-08-13 Nippon Steel Corp 単結晶炭化珪素の製造方法
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
JP2002520251A (ja) * 1998-07-13 2002-07-09 シーメンス アクチエンゲゼルシヤフト ＳｉＣ単結晶の成長方法
JP2003504298A (ja) * 1999-07-07 2003-02-04 シーメンス アクチエンゲゼルシヤフト ＳｉＣ単結晶を成長圧力下に加熱して昇華成長させる方法
JP2004099340A (ja) * 2002-09-05 2004-04-02 Nippon Steel Corp 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
JP2007500667A (ja) * 2003-07-28 2007-01-18 クリー　インコーポレイテッド 水素含有雰囲気下で昇華成長させることによる炭化珪素結晶中の窒素含有量の低下

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GB8816632D0 (en) 1988-07-13 1988-08-17 Raychem Ltd Electrical device
US5119540A (en) 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
GB9206086D0 (en) 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
US5709745A (en) 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
US5718760A (en) 1996-02-05 1998-02-17 Cree Research, Inc. Growth of colorless silicon carbide crystals
US6201342B1 (en) 1997-06-30 2001-03-13 The United States Of America As Represented By The Secretary Of The Navy Automatically sharp field emission cathodes
JP3920103B2 (ja) * 2002-01-31 2007-05-30 大阪府 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
JPH08208380A (ja) * 1995-01-25 1996-08-13 Nippon Steel Corp 単結晶炭化珪素の製造方法
JP2002520251A (ja) * 1998-07-13 2002-07-09 シーメンス アクチエンゲゼルシヤフト ＳｉＣ単結晶の成長方法
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
JP2003504298A (ja) * 1999-07-07 2003-02-04 シーメンス アクチエンゲゼルシヤフト ＳｉＣ単結晶を成長圧力下に加熱して昇華成長させる方法
JP2004099340A (ja) * 2002-09-05 2004-04-02 Nippon Steel Corp 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
JP2007500667A (ja) * 2003-07-28 2007-01-18 クリー　インコーポレイテッド 水素含有雰囲気下で昇華成長させることによる炭化珪素結晶中の窒素含有量の低下

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112017001142B4 (de) 2016-03-04 2023-06-29 Denso Corporation Herstellungsverfahren eines Halbleitersubstrats aus Siliziumcarbid und mit diesem Verfahren herstellbares Halbleitersubstrat

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CN1849417A (zh) 2006-10-18
CA2533934A1 (en) 2005-02-10
JP2007500668A (ja) 2007-01-18
CN100451184C (zh) 2009-01-14
US7147715B2 (en) 2006-12-12
US20050145164A9 (en) 2005-07-07
KR20060065661A (ko) 2006-06-14
US20050022724A1 (en) 2005-02-03
EP1664397B1 (en) 2009-12-23
ATE453000T1 (de) 2010-01-15
EP1664397A1 (en) 2006-06-07
DE602004024800D1 (de) 2010-02-04
TW200510264A (en) 2005-03-16
WO2005012603A1 (en) 2005-02-10

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