ATE451716T1 - Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen - Google Patents
Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialenInfo
- Publication number
- ATE451716T1 ATE451716T1 AT01974440T AT01974440T ATE451716T1 AT E451716 T1 ATE451716 T1 AT E451716T1 AT 01974440 T AT01974440 T AT 01974440T AT 01974440 T AT01974440 T AT 01974440T AT E451716 T1 ATE451716 T1 AT E451716T1
- Authority
- AT
- Austria
- Prior art keywords
- crystalline
- stress fields
- securing
- thin film
- face
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 4
- 239000010409 thin film Substances 0.000 abstract 3
- 239000002178 crystalline material Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Micromachines (AREA)
- Measurement Of Current Or Voltage (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Surface Treatment Of Glass (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0012796A FR2815121B1 (fr) | 2000-10-06 | 2000-10-06 | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
| PCT/FR2001/003074 WO2002029876A1 (fr) | 2000-10-06 | 2001-10-05 | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE451716T1 true ATE451716T1 (de) | 2009-12-15 |
Family
ID=8855073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01974440T ATE451716T1 (de) | 2000-10-06 | 2001-10-05 | Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7041227B2 (enExample) |
| EP (1) | EP1332517B1 (enExample) |
| JP (2) | JP2004511102A (enExample) |
| AT (1) | ATE451716T1 (enExample) |
| DE (1) | DE60140760D1 (enExample) |
| FR (1) | FR2815121B1 (enExample) |
| WO (1) | WO2002029876A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004281878A (ja) * | 2003-03-18 | 2004-10-07 | Seiko Epson Corp | 半導体基板の製造方法及びこれにより製造される半導体基板、電気光学装置並びに電子機器 |
| JP2005279843A (ja) * | 2004-03-29 | 2005-10-13 | Univ Of Tokyo | 細線を含む結晶材料とその製造方法、およびこれを用いたナノ細線デバイス |
| US7495266B2 (en) * | 2004-06-16 | 2009-02-24 | Massachusetts Institute Of Technology | Strained silicon-on-silicon by wafer bonding and layer transfer |
| FR2876498B1 (fr) * | 2004-10-12 | 2008-03-14 | Commissariat Energie Atomique | Procede de realisation d'heterostructures resonnantes a transport planaire |
| FR2877662B1 (fr) | 2004-11-09 | 2007-03-02 | Commissariat Energie Atomique | Reseau de particules et procede de realisation d'un tel reseau. |
| US7535089B2 (en) * | 2005-11-01 | 2009-05-19 | Massachusetts Institute Of Technology | Monolithically integrated light emitting devices |
| US20070252223A1 (en) * | 2005-12-05 | 2007-11-01 | Massachusetts Institute Of Technology | Insulated gate devices and method of making same |
| FR2895391B1 (fr) * | 2005-12-27 | 2008-01-25 | Commissariat Energie Atomique | Procede d'elaboration de nanostructures ordonnees |
| FR2895419B1 (fr) | 2005-12-27 | 2008-02-22 | Commissariat Energie Atomique | Procede de realisation simplifiee d'une structure epitaxiee |
| FR2896493B1 (fr) * | 2006-01-23 | 2008-02-22 | Commissariat Energie Atomique | Procede d'elaboration d'un support pour la croissance de nanostructures allongees localisees |
| US8063397B2 (en) * | 2006-06-28 | 2011-11-22 | Massachusetts Institute Of Technology | Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission |
| FR2903810B1 (fr) * | 2006-07-13 | 2008-10-10 | Commissariat Energie Atomique | Procede de nanostructuration de la surface d'un substrat |
| JP2009063202A (ja) * | 2007-09-05 | 2009-03-26 | Daikin Ind Ltd | 放熱器およびそれを備えた冷凍装置 |
| FR2925748B1 (fr) | 2007-12-21 | 2010-01-29 | Commissariat Energie Atomique | Support de stockage de donnees et procede associe |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2766620B1 (fr) * | 1997-07-22 | 2000-12-01 | Commissariat Energie Atomique | Realisation de microstructures ou de nanostructures sur un support |
| FR2767604B1 (fr) * | 1997-08-19 | 2000-12-01 | Commissariat Energie Atomique | Procede de traitement pour le collage moleculaire et le decollage de deux structures |
| US5981400A (en) * | 1997-09-18 | 1999-11-09 | Cornell Research Foundation, Inc. | Compliant universal substrate for epitaxial growth |
| JP3031904B2 (ja) * | 1998-02-18 | 2000-04-10 | キヤノン株式会社 | 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法 |
| FR2784800B1 (fr) * | 1998-10-20 | 2000-12-01 | Commissariat Energie Atomique | Procede de realisation de composants passifs et actifs sur un meme substrat isolant |
| AU2049801A (en) * | 1999-12-09 | 2001-06-18 | Cornell Research Foundation Inc. | Fabrication of periodic surface structures with nanometer-scale spacings |
-
2000
- 2000-10-06 FR FR0012796A patent/FR2815121B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-05 AT AT01974440T patent/ATE451716T1/de not_active IP Right Cessation
- 2001-10-05 WO PCT/FR2001/003074 patent/WO2002029876A1/fr not_active Ceased
- 2001-10-05 DE DE60140760T patent/DE60140760D1/de not_active Expired - Lifetime
- 2001-10-05 US US10/398,630 patent/US7041227B2/en not_active Expired - Fee Related
- 2001-10-05 EP EP01974440A patent/EP1332517B1/fr not_active Expired - Lifetime
- 2001-10-05 JP JP2002533358A patent/JP2004511102A/ja active Pending
-
2007
- 2007-11-21 JP JP2007302263A patent/JP4954853B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1332517A1 (fr) | 2003-08-06 |
| EP1332517B1 (fr) | 2009-12-09 |
| US20040074866A1 (en) | 2004-04-22 |
| FR2815121A1 (fr) | 2002-04-12 |
| WO2002029876A1 (fr) | 2002-04-11 |
| DE60140760D1 (de) | 2010-01-21 |
| US7041227B2 (en) | 2006-05-09 |
| FR2815121B1 (fr) | 2002-12-13 |
| JP4954853B2 (ja) | 2012-06-20 |
| JP2004511102A (ja) | 2004-04-08 |
| JP2008124480A (ja) | 2008-05-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |