DE60140760D1 - Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen - Google Patents

Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen

Info

Publication number
DE60140760D1
DE60140760D1 DE60140760T DE60140760T DE60140760D1 DE 60140760 D1 DE60140760 D1 DE 60140760D1 DE 60140760 T DE60140760 T DE 60140760T DE 60140760 T DE60140760 T DE 60140760T DE 60140760 D1 DE60140760 D1 DE 60140760D1
Authority
DE
Germany
Prior art keywords
crystalline
securing
thin film
face
contact area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140760T
Other languages
German (de)
English (en)
Inventor
Franck Fournel
Hubert Moriceau
Noel Magnea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE60140760D1 publication Critical patent/DE60140760D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Micromachines (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Surface Treatment Of Glass (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE60140760T 2000-10-06 2001-10-05 Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen Expired - Lifetime DE60140760D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0012796A FR2815121B1 (fr) 2000-10-06 2000-10-06 Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides
PCT/FR2001/003074 WO2002029876A1 (fr) 2000-10-06 2001-10-05 Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides

Publications (1)

Publication Number Publication Date
DE60140760D1 true DE60140760D1 (de) 2010-01-21

Family

ID=8855073

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140760T Expired - Lifetime DE60140760D1 (de) 2000-10-06 2001-10-05 Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen

Country Status (7)

Country Link
US (1) US7041227B2 (enExample)
EP (1) EP1332517B1 (enExample)
JP (2) JP2004511102A (enExample)
AT (1) ATE451716T1 (enExample)
DE (1) DE60140760D1 (enExample)
FR (1) FR2815121B1 (enExample)
WO (1) WO2002029876A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281878A (ja) * 2003-03-18 2004-10-07 Seiko Epson Corp 半導体基板の製造方法及びこれにより製造される半導体基板、電気光学装置並びに電子機器
JP2005279843A (ja) * 2004-03-29 2005-10-13 Univ Of Tokyo 細線を含む結晶材料とその製造方法、およびこれを用いたナノ細線デバイス
US7495266B2 (en) * 2004-06-16 2009-02-24 Massachusetts Institute Of Technology Strained silicon-on-silicon by wafer bonding and layer transfer
FR2876498B1 (fr) * 2004-10-12 2008-03-14 Commissariat Energie Atomique Procede de realisation d'heterostructures resonnantes a transport planaire
FR2877662B1 (fr) 2004-11-09 2007-03-02 Commissariat Energie Atomique Reseau de particules et procede de realisation d'un tel reseau.
US7535089B2 (en) * 2005-11-01 2009-05-19 Massachusetts Institute Of Technology Monolithically integrated light emitting devices
US20070252223A1 (en) * 2005-12-05 2007-11-01 Massachusetts Institute Of Technology Insulated gate devices and method of making same
FR2895391B1 (fr) * 2005-12-27 2008-01-25 Commissariat Energie Atomique Procede d'elaboration de nanostructures ordonnees
FR2895419B1 (fr) 2005-12-27 2008-02-22 Commissariat Energie Atomique Procede de realisation simplifiee d'une structure epitaxiee
FR2896493B1 (fr) * 2006-01-23 2008-02-22 Commissariat Energie Atomique Procede d'elaboration d'un support pour la croissance de nanostructures allongees localisees
US8063397B2 (en) * 2006-06-28 2011-11-22 Massachusetts Institute Of Technology Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
FR2903810B1 (fr) * 2006-07-13 2008-10-10 Commissariat Energie Atomique Procede de nanostructuration de la surface d'un substrat
JP2009063202A (ja) * 2007-09-05 2009-03-26 Daikin Ind Ltd 放熱器およびそれを備えた冷凍装置
FR2925748B1 (fr) 2007-12-21 2010-01-29 Commissariat Energie Atomique Support de stockage de donnees et procede associe

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2766620B1 (fr) * 1997-07-22 2000-12-01 Commissariat Energie Atomique Realisation de microstructures ou de nanostructures sur un support
FR2767604B1 (fr) * 1997-08-19 2000-12-01 Commissariat Energie Atomique Procede de traitement pour le collage moleculaire et le decollage de deux structures
US5981400A (en) * 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
JP3031904B2 (ja) * 1998-02-18 2000-04-10 キヤノン株式会社 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法
FR2784800B1 (fr) * 1998-10-20 2000-12-01 Commissariat Energie Atomique Procede de realisation de composants passifs et actifs sur un meme substrat isolant
AU2049801A (en) * 1999-12-09 2001-06-18 Cornell Research Foundation Inc. Fabrication of periodic surface structures with nanometer-scale spacings

Also Published As

Publication number Publication date
EP1332517A1 (fr) 2003-08-06
EP1332517B1 (fr) 2009-12-09
US20040074866A1 (en) 2004-04-22
FR2815121A1 (fr) 2002-04-12
WO2002029876A1 (fr) 2002-04-11
ATE451716T1 (de) 2009-12-15
US7041227B2 (en) 2006-05-09
FR2815121B1 (fr) 2002-12-13
JP4954853B2 (ja) 2012-06-20
JP2004511102A (ja) 2004-04-08
JP2008124480A (ja) 2008-05-29

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Legal Events

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