ATE451716T1 - Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen - Google Patents
Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialenInfo
- Publication number
- ATE451716T1 ATE451716T1 AT01974440T AT01974440T ATE451716T1 AT E451716 T1 ATE451716 T1 AT E451716T1 AT 01974440 T AT01974440 T AT 01974440T AT 01974440 T AT01974440 T AT 01974440T AT E451716 T1 ATE451716 T1 AT E451716T1
- Authority
- AT
- Austria
- Prior art keywords
- crystalline
- stress fields
- securing
- thin film
- face
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0012796A FR2815121B1 (fr) | 2000-10-06 | 2000-10-06 | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
PCT/FR2001/003074 WO2002029876A1 (fr) | 2000-10-06 | 2001-10-05 | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE451716T1 true ATE451716T1 (de) | 2009-12-15 |
Family
ID=8855073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01974440T ATE451716T1 (de) | 2000-10-06 | 2001-10-05 | Verfahren zum aufzeigen von kristallfehlern und/oder spannungsfeldern in der kontaktfläche von zwei verbundenen materialen |
Country Status (7)
Country | Link |
---|---|
US (1) | US7041227B2 (de) |
EP (1) | EP1332517B1 (de) |
JP (2) | JP2004511102A (de) |
AT (1) | ATE451716T1 (de) |
DE (1) | DE60140760D1 (de) |
FR (1) | FR2815121B1 (de) |
WO (1) | WO2002029876A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004281878A (ja) * | 2003-03-18 | 2004-10-07 | Seiko Epson Corp | 半導体基板の製造方法及びこれにより製造される半導体基板、電気光学装置並びに電子機器 |
JP2005279843A (ja) * | 2004-03-29 | 2005-10-13 | Univ Of Tokyo | 細線を含む結晶材料とその製造方法、およびこれを用いたナノ細線デバイス |
US7495266B2 (en) * | 2004-06-16 | 2009-02-24 | Massachusetts Institute Of Technology | Strained silicon-on-silicon by wafer bonding and layer transfer |
FR2876498B1 (fr) * | 2004-10-12 | 2008-03-14 | Commissariat Energie Atomique | Procede de realisation d'heterostructures resonnantes a transport planaire |
FR2877662B1 (fr) | 2004-11-09 | 2007-03-02 | Commissariat Energie Atomique | Reseau de particules et procede de realisation d'un tel reseau. |
WO2007053686A2 (en) * | 2005-11-01 | 2007-05-10 | Massachusetts Institute Of Technology | Monolithically integrated semiconductor materials and devices |
WO2007067589A2 (en) * | 2005-12-05 | 2007-06-14 | Massachusetts Institute Of Technology | Insulated gate devices and method of making same |
FR2895391B1 (fr) * | 2005-12-27 | 2008-01-25 | Commissariat Energie Atomique | Procede d'elaboration de nanostructures ordonnees |
FR2895419B1 (fr) | 2005-12-27 | 2008-02-22 | Commissariat Energie Atomique | Procede de realisation simplifiee d'une structure epitaxiee |
FR2896493B1 (fr) * | 2006-01-23 | 2008-02-22 | Commissariat Energie Atomique | Procede d'elaboration d'un support pour la croissance de nanostructures allongees localisees |
US8063397B2 (en) * | 2006-06-28 | 2011-11-22 | Massachusetts Institute Of Technology | Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission |
FR2903810B1 (fr) | 2006-07-13 | 2008-10-10 | Commissariat Energie Atomique | Procede de nanostructuration de la surface d'un substrat |
JP2009063202A (ja) * | 2007-09-05 | 2009-03-26 | Daikin Ind Ltd | 放熱器およびそれを備えた冷凍装置 |
FR2925748B1 (fr) | 2007-12-21 | 2010-01-29 | Commissariat Energie Atomique | Support de stockage de donnees et procede associe |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2766620B1 (fr) * | 1997-07-22 | 2000-12-01 | Commissariat Energie Atomique | Realisation de microstructures ou de nanostructures sur un support |
FR2767604B1 (fr) * | 1997-08-19 | 2000-12-01 | Commissariat Energie Atomique | Procede de traitement pour le collage moleculaire et le decollage de deux structures |
US5981400A (en) * | 1997-09-18 | 1999-11-09 | Cornell Research Foundation, Inc. | Compliant universal substrate for epitaxial growth |
JP3031904B2 (ja) * | 1998-02-18 | 2000-04-10 | キヤノン株式会社 | 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法 |
FR2784800B1 (fr) * | 1998-10-20 | 2000-12-01 | Commissariat Energie Atomique | Procede de realisation de composants passifs et actifs sur un meme substrat isolant |
US6329070B1 (en) * | 1999-12-09 | 2001-12-11 | Cornell Research Foundation, Inc. | Fabrication of periodic surface structures with nanometer-scale spacings |
-
2000
- 2000-10-06 FR FR0012796A patent/FR2815121B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-05 JP JP2002533358A patent/JP2004511102A/ja active Pending
- 2001-10-05 EP EP01974440A patent/EP1332517B1/de not_active Expired - Lifetime
- 2001-10-05 WO PCT/FR2001/003074 patent/WO2002029876A1/fr active Application Filing
- 2001-10-05 AT AT01974440T patent/ATE451716T1/de not_active IP Right Cessation
- 2001-10-05 DE DE60140760T patent/DE60140760D1/de not_active Expired - Lifetime
- 2001-10-05 US US10/398,630 patent/US7041227B2/en not_active Expired - Fee Related
-
2007
- 2007-11-21 JP JP2007302263A patent/JP4954853B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1332517B1 (de) | 2009-12-09 |
DE60140760D1 (de) | 2010-01-21 |
FR2815121A1 (fr) | 2002-04-12 |
JP2004511102A (ja) | 2004-04-08 |
EP1332517A1 (de) | 2003-08-06 |
JP2008124480A (ja) | 2008-05-29 |
FR2815121B1 (fr) | 2002-12-13 |
US7041227B2 (en) | 2006-05-09 |
WO2002029876A1 (fr) | 2002-04-11 |
JP4954853B2 (ja) | 2012-06-20 |
US20040074866A1 (en) | 2004-04-22 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |